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  • 北京元坤伟业科技有限公司

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     该会员已使用本站13年以上
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产品型号DG408DY-T1-E3的概述

DG408DY-T1-E3 芯片的概述 DG408DY-T1-E3 是一款由 Analog Devices 生产的多路复用器/解复用器芯片,广泛用于信号路径的选择和切换。该芯片属于数模混合电路领域,能够在各种信号处理应用中表现出色。DG408DY-T1-E3 具备高开关带宽、低失真及优良的线性特性,广泛应用于通信、音频处理及自动化设备等领域。 DG408DY-T1-E3 的详细参数 DG408DY-T1-E3 是一款 8 通道模拟开关,允许选择多个输入信号中的一个进行输出。以下是其主要技术参数: 1. 工作电源电压(VDD): 5V 至 15V,适合多种应用需求。 2. 开关信号类型: 双相控制(或称为双向切换),可由控制端口选择具体信号通道。 3. 开关阻抗: 低开关阻抗,使得在信号路径中不会造成显著的信号衰减。 4. 总线控制方式: 具有 TYP431 电流开启特性,能够满足常规信...

产品型号DG408DY-T1-E3的Datasheet PDF文件预览

DG408/409  
Vishay Siliconix  
8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers  
DESCRIPTION  
FEATURES  
Low On-Resistance - rDS(on): 100 Ω  
Low Charge Injection - Q: 20 pC  
Fast Transition Time - tTRANS: 160 ns  
Low Power - ISUPPLY: 10 µA  
Single Supply Capability  
The DG408 is an 8-channel single-ended analog multiplexer  
designed to connect one of eight inputs to a common output  
as determined by a 3-bit binary address (A0, A1, A2). The  
DG409 is a dual 4-channel differential analog multiplexer  
designed to connect one of four differential inputs to a  
common dual output as determined by its 2-bit binary  
address (A0, A1). Break-before-make switching action  
protects against momentary crosstalk between adjacent  
channels.  
Pb-free  
Available  
RoHS*  
COMPLIANT  
44 V Supply Max Rating  
TTL Compatible Logic  
An on channel conducts current equally well in both  
directions. In the off state each channel blocks voltages up  
to the power supply rails. An enable (EN) function allows the  
user to reset the multiplexer/demultiplexer to all switches off  
for stacking several devices. All control inputs, address (Ax)  
and enable (EN) are TTL compatible over the full specified  
operating temperature range.  
BENEFITS  
Reduced Switching Errors  
Reduced Glitching  
Improved Data Throughput  
Reduced Power Consumption  
Increased Ruggedness  
Wide Supply Ranges ( 5 V to 20 V)  
Applications for the DG408/409 include high speed data  
acquisition, audio signal switching and routing, ATE  
systems, and avionics. High performance and low power  
dissipation make them ideal for battery operated and remote  
instrumentation applications.  
APPLICATIONS  
Data Acquisition Systems  
Audio Signal Routing  
ATE Systems  
Battery Powered Systems  
High Rel Systems  
Designed in the 44 V silicon-gate CMOS process, the  
absolute maximum voltage rating is extended to 44 V.  
Additionally, single supply operation is also allowed. An  
epitaxial layer prevents latchup.  
Single Supply Systems  
Medical Instrumentation  
For additional information please see Technical Article  
TA201 (FaxBack Number 70600).  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
Dual-In-Line  
SOIC and TSSOP  
Dual-In-Line  
SOIC and TSSOP  
DG409  
DG408  
A
A
A
A
A
1
0
1
2
0
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
EN  
V-  
EN  
V-  
GND  
V+  
Decoders/Drivers  
Decoders/Drivers  
GND  
V+  
S
1
S
S
1a  
2a  
3a  
1b  
S
2
S
5
S
S
S
S
2b  
S
S
S
S
S
S
3
4
6
7
3b  
4b  
4a  
D
S
D
D
b
8
a
Top View  
Top View  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
www.vishay.com  
1
DG408/409  
Vishay Siliconix  
TRUTH TABLES AND ORDERING INFORMATION  
TRUTH TABLE - DG408  
TRUTH TABLE - DG409  
A2  
X
0
A1  
X
0
A0  
X
0
A1  
X
0
A0  
X
0
EN  
0
On Switch  
EN  
0
On Switch  
None  
None  
1
1
2
3
4
5
6
7
8
1
1
2
3
4
0
0
1
1
0
1
1
0
1
0
1
1
0
1
0
1
1
1
1
1
1
Logic "0" = VAL 0.8 V  
Logic "1" = VAH 2.4 V  
X = Don’t Care  
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
1
ORDERING INFORMATION - DG408  
ORDERING INFORMATION - DG409  
Temp Range  
Package  
Part Number  
Temp Range  
Package  
Part Number  
DG408DJ  
DG408DJ-E3  
DG409DJ  
DG409DJ-E3  
16-Pin Plastic DIP  
16-Pin Plastic DIP  
DG408DY  
DG408DY-E3  
DG408DY-T1  
DG408DY-T1-E3  
DG409DY  
DG409DY-E3  
DG409DY-T1  
DG409DY-T1-E3  
16-Pin SOIC  
16-Pin SOIC  
- 40 to 85 °C  
- 40 to 85 °C  
DG408DQ  
DG408DQ-E3  
DG408DQ-T1  
DG408DQ-T1-E3  
DG409DQ  
DG409DQ-E3  
DG409DQ-T1  
DG409DQ-T1-E3  
16-Pin TSSOP  
16-Pin TSSOP  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Limit  
Unit  
44  
25  
V+  
Voltages Referenced to V-  
GND  
V
(V-) - 2 to (V+) + 2  
or 20 mA, whichever occurs first  
Digital Inputsa, VS, VD  
Current (Any Terminal)  
30  
100  
mA  
°C  
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max)  
- 65 to 150  
- 65 to 125  
450  
(AK Suffix)  
Storage Temperature  
(DJ, DY Suffix)  
16-Pin Plastic DIPc  
16-Pin Narrow SOIC and TSSOPd  
16-Pin CerDIPe  
LCC-20f  
600  
900  
750  
Power Dissipation (Package)b  
Notes:  
mW  
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.  
b. All leads soldered or welded to PC board.  
c. Derate 6 mW/°C above 75 °C.  
d. Derate 7.6 mW/°C above 75 °C.  
e. Derate 12 mW/°C above 75 °C.  
f. Derate 10 mW/°C above 75 °C.  
www.vishay.com  
2
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
DG408/409  
Vishay Siliconix  
a
SPECIFICATIONS  
Test Conditions  
Unless Otherwise Specified  
V+ = 15 V, V- = - 15 V  
A Suffix  
- 55 to 125 °C - 40 to 85 °C  
D Suffix  
AL = 0.8 V, VAH = 2.4 Vf  
Parameter  
Symbol  
Tempb Typc  
Mind Maxd Mind Maxd Unit  
V
Analog Switch  
Analog Signal Rangee  
Drain-Source  
VANALOG  
rDS(on)  
Full  
- 15  
15  
- 15  
15  
V
Ω
%
Room  
Full  
40  
100  
125  
100  
125  
VD  
=
10 V, IS = - 10 mA  
On-Resistance  
DS(on) Matching Between Channelsg  
ΔrDS(on)  
VD  
VS  
=
=
10 V  
10 V  
Room  
15  
15  
r
Room  
Full  
- 0.5  
- 50  
0.5  
50  
- 0.5  
- 5  
0.5  
5
IS(off)  
Source Off Leakage Current  
Drain Off Leakage Current  
VD  
=
10 V, VEN = 0 V  
Room  
Full  
Room  
Full  
Room  
Full  
Room  
Full  
- 1  
- 100  
- 1  
- 50  
- 1  
- 100  
- 1  
- 50  
1
100  
1
50  
1
100  
1
50  
- 1  
- 20  
- 1  
- 10  
- 1  
- 20  
- 1  
- 10  
1
20  
1
10  
1
20  
1
10  
VD  
VS  
=
=
10 V  
10 V  
DG408  
DG409  
DG408  
DG409  
ID(off)  
nA  
VEN = 0 V  
VS = VD  
=
10  
ID(on)  
Drain On Leakage Current  
Sequence Each  
Switch On  
Digital Control  
VINH  
VINL  
IAH  
Logic High Input Voltage  
Logic Low Input Voltage  
Logic High Input Current  
Logic Low Input Current  
Logic Input Capacitance  
Dynamic Characteristics  
Transition Time  
Full  
Full  
2.4  
2.4  
V
0.8  
10  
10  
0.8  
10  
10  
VA = 2.4 V, 15 V  
Full  
- 10  
- 10  
- 10  
- 10  
µA  
pF  
IAL  
VEN = 0 V, 2.4 V, VA = 0 V  
f = 1 MHz  
Full  
Cin  
Room  
8
tTRANS  
tOPEN  
See Figure 2  
See Figure 4  
Full  
160  
115  
250  
250  
Break-Before-Make Interval  
Room  
10  
10  
ns  
Room  
Full  
150  
225  
150  
150  
tON(EN)  
Enable Turn-On Time  
See Figure 3  
tOFF(EN)  
Q
Enable Turn-Off Time  
Charge Injection  
Room  
Room  
105  
20  
150  
CL = 10 nF, VS = 0 V  
pC  
dB  
VEN = 0 V, RL = 1 kΩ  
f = 100 kHz  
VEN = 0 V, VS = 0 V, f = 1 MHz  
Off Isolationh  
OIRR  
CS(off)  
Room  
Room  
- 75  
Source Off Capacitance  
3
DG408 Room  
DG409 Room  
DG408 Room  
DG409 Room  
26  
14  
37  
25  
CD(off)  
CD(on)  
Drain Off Capacitance  
Drain On Capacitance  
VEN = 0 V  
VD = 0 V  
f = 1 MHz  
pF  
Power Supplies  
Positive Supply Current  
Negative Supply Current  
I+  
I-  
Full  
10  
1
75  
75  
VEN = VA = 0 V or 5 V  
VEN = 2.4 V, VA = 0 V  
µA  
Full  
- 75  
- 75  
Room  
Full  
0.2  
0.5  
2
0.5  
2
Positive Supply Current  
Negative Supply Current  
I+  
I-  
mA  
µA  
Full  
- 500  
- 500  
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
www.vishay.com  
3
DG408/409  
Vishay Siliconix  
a
SPECIFICATIONS FOR SINGLE SUPPLY  
Test Conditions  
A Suffix  
D Suffix  
Unless Otherwise Specified  
- 55 to 125 °C - 40 to 85 °C  
V+ = 12 V, V- = 0 V  
Tempb Typc  
Mind Maxd Mind Maxd Unit  
V
AL = 0.8 V, VAH = 2.4 Vf  
Parameter  
Symbol  
Analog Switch  
Drain-Source  
On-Resistancee,f  
rDS(on)  
VD = 3 V, 10 V, IS = - 1 mA  
Room  
90  
Ω
Dynamic Characteristics  
Switching Time of Multiplexere  
Enable Turn-On Timee  
Enable Turn-Off Timee  
Charge Injectione  
tTRANS VS1 = 8 V, VS8 = 0 V, VIN = 2.4 V  
Room  
Room  
Room  
Room  
180  
180  
120  
5
tON(EN)  
tOFF(EN)  
Q
VINH = 2.4 V, VINL = 0 V  
VS1 = 5 V  
ns  
CL = 1 nF, VS = 6 V, RS = 0  
pC  
Notes:  
a. Refer to PROCESS OPTION FLOWCHART.  
b. Room = 25 °C, Full = as determined by the operating temperature suffix.  
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.  
e. Guaranteed by design, not subject to production test.  
f. VIN = input voltage to perform proper function.  
g. ΔrDS(on) = rDS(on) MAX - rDS(on) MIN.  
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
4
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
DG408/409  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
80  
60  
V
V
= 0 V for I  
S
S
D(off)  
D(on)  
V+ = 15 V  
V- = - 15 V  
= V for I  
D
40  
20  
60  
C
C
D(on)  
DG408 I  
D(off)  
DG409 I  
D(off)  
DG409 I  
D(on)  
D(off)  
40  
20  
0
0
- 20  
DG408 I  
D(on)  
C
S(off)  
- 40  
- 60  
- 15  
- 10  
- 5  
0
5
10  
15  
0
2
4
6
8
10  
12  
V
– Analog Voltage (V)  
V
– Analog Voltage (V)  
ANALOG  
ANALOG  
Drain Leakage Current vs. Source/Drain Voltage  
(Single 12-V Supply)  
Source/Drain Capacitance vs. Analog Voltage  
100  
60  
20  
15  
V+ = 15 V  
V- = - 15 V  
V
V
= -V for I  
S
D
D D(off)  
= V  
for I  
D(on)  
S(open)  
V+ = 15 V  
V- = - 15 V  
20  
10  
5
DG409 I  
D(off)  
- 20  
- 60  
- 100  
- 140  
0
- 5  
DG409 I  
D(on)  
V+ = 12 V  
V- = 0 V  
DG408 I  
- 5  
, I  
D(on) D(off)  
- 10  
- 15  
- 10  
0
5
10  
15  
- 15  
- 10  
- 5  
0
5
10  
15  
V
D
or V - Drain or Source Voltage (V)  
S
V
- Source Voltage (V)  
S
Drain Leakage Current vs. Source/DrainVoltage  
Source Leakage Current vs. Source Voltage  
2.0  
- 100 mA  
- 10 mA  
V
=
15 V  
SUPPLY  
1.5  
1.0  
- 1 mA  
V
= 2.4 V  
EN  
- 100 µA  
- 10 µA  
0.5  
0.0  
V
= 0 V or 5 V  
EN  
- 1 µA  
- 0.1 µA  
4
8
12  
16  
20  
100  
1 k  
10 k  
100 k  
1 M  
10 M  
+V  
(V)  
SUPPLY  
Switching Frequency (Hz)  
Negative Supply Current vs. Switching Frequency  
Input Switching Threshold vs. Supply Voltage  
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
www.vishay.com  
5
DG408/409  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
100 mA  
100 µA  
10 µA  
V
= 15 V  
SUPPLY  
I+  
10 mA  
1 mA  
1 µA  
V
= 2.4 V  
100 nA  
EN  
10 nA  
1 nA  
100 µA  
10 µA  
- (I-)  
V
=
15 V  
SUPPLY  
V
A
= 0 V  
V
= 0 V or 5 V  
EN  
100 pA  
10 pA  
V
= 0 V  
EN  
100  
1 k  
10 k  
100 k  
1 M  
10 M  
- 55 - 35 - 15  
5
25  
45  
65  
85 105 125  
Switching Frequency (Hz)  
Temperature (°C)  
ISUPPLY vs. Temperature  
Positive Supply Current vs. Switching Frequency  
90  
80  
70  
60  
C
= 10000 pF  
= 5 Vp-p  
L
20  
V
IN  
15  
50  
40  
30  
20  
10  
0
V+ = 15 V  
V- = - 15 V  
V+ = 15 V  
V- = - 15 V  
10  
5
V
V
= 0 V  
= 0 V  
IN  
EN  
V+ = 12 V  
V- = 0 V  
0
- 10  
- 55 - 35 - 15  
5
25  
45  
65  
85 105 125  
- 15  
- 10  
- 5  
0
5
10  
15  
Temperature (°C)  
V
- Source Voltage (V)  
S
Positive Supply Current vs. Temperature (DG408)  
Charge Injection vs. Analog Voltage  
160  
140  
120  
120  
V+ = 7.5 V  
100  
5 V  
80  
10 V  
12 V  
100  
80  
60  
40  
20  
0
8 V  
60  
10 V  
12 V  
15 V  
20 V  
22 V  
40  
V- = 0 V  
20 V  
20  
0
15 V  
4
0
4
8
12  
16  
20 22  
- 20 - 16 - 12 - 8 - 4  
0
8
12 16  
20  
V
D
- Drain Voltage (V)  
V
- Drain Voltage (V)  
D
rDS(on) vs. VD and Supply  
rDS(on) vs. VD and Supply (Single Supply)  
www.vishay.com  
6
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
DG408/409  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
80  
130  
V+ = 15 V  
V- = - 15 V  
125 °C  
85 °C  
70  
110  
90  
60  
50  
40  
30  
20  
125 °C  
85 °C  
25 °C  
70  
25 °C  
0 °C  
- 40 °C  
50  
- 55 °C  
0 °C  
- 40 °C  
- 55 °C  
30  
10  
V+ = 12 V  
V- = 0 V  
10  
0
- 15  
- 10  
- 5  
0
5
10  
15  
100 M  
22  
0
10  
8
2
4
6
8
10  
12  
V
- Source Voltage (V)  
V
- Source Voltage (V)  
S
S
rDS(on) vs. VS and Temperature  
rDS(on) vs. VS and Temperature (Single Supply)  
- 150  
1
R
= 1 kΩ  
V+ = 15 V  
V- = - 15 V  
L
0
- 130  
- 110  
- 90  
R
L
= 1 kΩ  
V+ = 15 V  
V- = - 15 V  
Ref. 1 Vrms  
- 1  
- 2  
- 3  
- 4  
- 5  
- 6  
Off-Isolation  
- 70  
- 50  
- 30  
Crosstalk  
R
L
= 50 Ω  
100  
1 k  
10 k 100 k  
1 M  
10 M 100 M  
100  
1 k  
10 k  
f - Frequency (Hz)  
Off Isolation and Crosstalk vs. Frequency  
100 k  
1 M  
10 M  
f - Frequency (Hz)  
Insertion Loss vs. Frequency  
275  
250  
200  
t
TRANS  
175  
150  
125  
225  
200  
175  
150  
125  
100  
t
TRANS  
t
OFF(EN)  
t
OFF(EN)  
t
100  
75  
ON(EN)  
t
ON(EN)  
9
10  
11  
12  
(V)  
13  
14  
15  
10  
12  
14  
16  
18  
20  
V
V
(V)  
SUPPLY  
SUPPLY  
Switching Time vs. Bipolar Supply)  
Switching Time vs. Single Supply  
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
www.vishay.com  
7
DG408/409  
Vishay Siliconix  
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)  
V+  
V
GND  
REF  
D
A
0
V+  
V-  
Level  
Shift  
Decode/  
Drive  
A
X
S
S
1
n
V+  
EN  
V-  
Figure 1.  
TEST CIRCUITS  
+ 15 V  
V+  
A
A
A
2
S
10 V  
10 V  
1
8
1
0
S
- S  
7
2
S
DG408  
t < 20 ns  
t < 20 ns  
f
r
3 V  
0 V  
V
EN  
D
O
Logic  
Input  
50 %  
GND  
V-  
35 pF  
300 Ω  
50 Ω  
- 15 V  
+ 15 V  
V
S1  
90 %  
Switch  
Output  
V
0 V  
O
V+  
A
A
1
0
S
10 V  
10 V  
90 %  
1
V
S8  
S
- S , D  
4a  
1a  
a
t
t
TRANS  
TRANS  
S
4b  
DG409  
S ON  
1
S ON  
8
V
D
b
EN  
O
GND  
V-  
35 pF  
300 Ω  
50 Ω  
- 15 V  
Figure 2. Transition Time  
www.vishay.com  
8
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
DG408/409  
Vishay Siliconix  
TEST CIRCUITS  
+ 15 V  
V+  
S
- 5 V  
1
EN  
S
- S  
8
2
A
A
A
0
DG408  
1
2
t < 20 ns  
r
t < 20 ns  
f
3 V  
Logic  
Input  
V
O
D
50 %  
GND  
V-  
0 V  
t
50 Ω  
35 pF  
1 kΩ  
t
ON(EN)  
OFF(EN)  
- 15 V  
0 V  
10 %  
+ 15 V  
V+  
Switch  
Output  
V
O
90 %  
S
- 5 V  
1b  
V
O
EN  
S
- S , D  
4a a  
1a  
A
A
0
S
- S  
2b 4b  
DG409  
1
D
b
V
O
GND  
V-  
50 Ω  
35 pF  
1 kΩ  
- 15 V  
Figure 3. Enable Switching Time  
+ 15 V  
V+  
t < 20 ns  
r
t < 20 ns  
f
3 V  
Logic  
Input  
+ 2.4 V  
EN  
50 %  
All S and D  
+ 5 V  
a
0 V  
A
A
A
0
1
DG408  
DG409  
D , D  
2
b
V
O
V
S
80 %  
GND  
V-  
Switch  
Output  
50 Ω  
35 pF  
300 Ω  
- 15 V  
V
O
t
OPEN  
0 V  
Figure 4. Break-Before-Make Interval  
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
www.vishay.com  
9
DG408/409  
Vishay Siliconix  
TEST CIRCUITS  
+ 15 V  
R
g
V+  
3 V  
0 V  
S
Logic  
Input  
X
OFF  
ON  
OFF  
EN  
A
A
A
0
D
V
O
Channel  
Select  
1
ΔV  
O
C
L
Switch  
Output  
2
10 nF  
GND  
V-  
ΔV is the measured voltage due to charge transfer  
O
error Q, when the channel turns off.  
- 15 V  
Q = C x ΔV  
L
O
Figure 5. Charge Injection  
+ 15 V  
+ 15 V  
V+  
V
IN  
V
IN  
S
S
1
V+  
S
X
V
X
S
V
S
R
g
= 50 Ω  
S
A
A
A
8
0
1
2
S
A
A
A
8
0
1
2
V
O
D
V
O
D
R
g
= 50 Ω  
R
1 kΩ  
L
R
L
GND  
EN  
V-  
1 kΩ  
GND  
EN  
V-  
- 15 V  
Off Isolation = 20 log  
- 15 V  
Crosstalk = 20 log  
V
OUT  
V
OUT  
V
IN  
V
IN  
Figure 6. Off Isolation  
Figure 7. Crosstalk  
+ 15 V  
V+  
+ 15 V  
V+  
V
S
S
1
R
g
= 50 Ω  
S
1
Meter  
A
A
A
2
1
0
A
A
A
D
V
0
1
2
HP4192A  
Impedance  
Analyzer  
O
Channel  
Select  
S
8
R
L
or Equivalent  
1 kΩ  
GND  
EN  
V-  
D
f = 1 MHz  
EN  
GND  
V-  
- 15 V  
Insertion Loss = 20 log  
V
OUT  
- 15 V  
V
IN  
Figure 9. Source Drain Capacitance  
Figure 8. Insertion Loss  
www.vishay.com  
10  
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
DG408/409  
Vishay Siliconix  
APPLICATIONS HINTS  
Overvoltage Protection  
A very convenient form of overvoltage protection consists of  
adding two small signal diodes (1N4148, 1N914 type) in  
series with the supply pins (see Figure 10). This  
arrangement effectively blocks the flow of reverse currents.  
It also floats the supply pin above or below the normal V+ or  
V- value. In this case the overvoltage signal actually  
becomes the power supply of the IC. From the point of view  
of the chip, nothing has changed, as long as the difference  
VS - (V-) doesn’t exceed + 44 V. The addition of these diodes  
will reduce the analog signal range to 1 V below V+ and 1 V  
above V-, but it preserves the low channel resistance and low  
leakage characteristics.  
V+  
1N4148  
S
X
D
V
g
DG408  
1N4148  
V-  
Figure 10. Overvoltage Protection Using Blocking Diodes  
Differential 4-Channel Sequential Multiplexer/Demultiplexer  
8-Channel Sequential Multiplexer/Demultiplexer  
+ 15 V  
- 15 V  
V-  
+ 15 V  
- 15 V  
V-  
V+ GND  
V+ GND  
S
1a  
2a  
3a  
4a  
S
S
S
S
S
S
S
1
2
3
4
5
6
7
S
S
S
Analog  
Output  
D
a
b
Differential  
Analog  
Inputs  
(Input)  
Differential  
Analog  
Outputs  
Analog  
Inputs  
(Outputs)  
D
DG408  
DG409  
(Outputs)  
S
S
S
S
1b  
2b  
3b  
(Inputs)  
D
S
A
8
0
4b  
A
A
A
EN  
1
2
+ 15 V  
A
1
EN  
0
+ 15 V  
DM7493  
Q
Q
Q
Q
B
C
D
Clock  
In  
B
IN  
J
J
Q
Q
Q
A
IN  
1/2 MM74C73  
CLK  
1/2 MM74C73  
CLK  
NC  
NC  
Clock  
A
r
01  
r
02  
In  
GND  
Q
K
NC  
K
NC  
CLEAR GND  
CLEAR  
6
+ 15 V  
Enable In  
(MUX On-Off Control)  
Reset Enable  
Figure 11.  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see http://www.vishay.com/ppg?70062.  
Document Number: 70062  
S-71155–Rev. G, 11-Jun-07  
www.vishay.com  
11  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1
配单直通车
DG408DY-T1-E3产品参数
型号:DG408DY-T1-E3
是否无铅: 不含铅
生命周期:Active
IHS 制造商:VISHAY SILICONIX
零件包装代码:SOIC
包装说明:SOP, SOP16,.25
针数:16
Reach Compliance Code:unknown
HTS代码:8542.39.00.01
风险等级:0.59
Samacsys Description:DG408DY-T1-E3, Multiplexer Single 8:1, 15, 18, 24, 28V, 16-Pin, SOIC
模拟集成电路 - 其他类型:SINGLE-ENDED MULTIPLEXER
JESD-30 代码:R-PDSO-G16
JESD-609代码:e3
长度:9.9 mm
湿度敏感等级:1
负电源电压最大值(Vsup):-20 V
负电源电压最小值(Vsup):-5 V
标称负供电电压 (Vsup):-15 V
信道数量:8
功能数量:1
端子数量:16
标称断态隔离度:75 dB
通态电阻匹配规范:15 Ω
最大通态电阻 (Ron):100 Ω
最高工作温度:85 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装代码:SOP
封装等效代码:SOP16,.25
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
电源:12/+-15 V
认证状态:Not Qualified
座面最大高度:1.75 mm
最大信号电流:0.02 A
子类别:Multiplexer or Switches
最大供电电流 (Isup):2 mA
最大供电电压 (Vsup):20 V
最小供电电压 (Vsup):5 V
标称供电电压 (Vsup):15 V
表面贴装:YES
最长断开时间:150 ns
最长接通时间:150 ns
切换:BREAK-BEFORE-MAKE
技术:CMOS
温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)
端子形式:GULL WING
端子节距:1.27 mm
端子位置:DUAL
处于峰值回流温度下的最长时间:30
宽度:3.9 mm
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