DMN2004DWK-7全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号DMN2004DWK-7的概述

DMN2004DWK-7芯片概述 DMN2004DWK-7是一种高效的N沟道MOSFET（金属氧化物半导体场效应晶体管），广泛应用于各种电子电路设计中，如电源管理、开关电路、LED驱动以及其他需要快速开关的应用场合。这种器件因其优良的性能和高效的功率管理能力而受到青睐。DMN2004DWK-7的设计目标是优化功率损耗，并确保在高开关频率下仍能保持稳定的性能。该芯片的工作原理基于MOSFET的特点，它利用电场控制电流的流动。在这种设备中，通过施加在栅极上的电压来控制源极和漏极之间的电流。DMN2004DWK-7的结构设计旨在实现快速开关响应，适合高频应用需求。 DMN2004DWK-7的详细参数 DMN2004DWK-7具有以下基本电气参数和特性： - 类型：N沟道MOSFET - 电压额定值（Vds）：40V - 电流额定值（Id）：30A - 栅源阈值电压（Vgs(th)）：2V到...

产品型号DMN2004DWK-7的Datasheet PDF文件预览

SPICE MODEL: DMN2004DWK

DMN2004DWK

DUAL N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

Lead-free Green

Features

Dual N-Channel MOSFET

SOT-363

Low On-Resistance

Dim

Min

0.10

1.15

2.00

Max

0.30

1.35

2.20

Low Gate Threshold Voltage

Low Input Capacitance

D₂

G₁

S₁

Fast Switching Speed

Low Input/Output Leakage

0.65 Nominal

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected up to 2KV

D₁

S₂

G₂

0.30

1.±0

0.40

2.20

0.10

1.00

0.40

0.25

±°

"Green" Device (Note 4)

Qualified to AEC-Q101 standards for High Reliability

0.90

0.25

0.10

0°

Mechanical Data

Case: SOT-363

Case Material: Molded Plastic, “Green” Molding

All Dimensions in mm

Compound. UL Flammability Classification Rating 94V-0

G₁

S₁

D₂

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

Marking: See Page 2

ESD protected up to 2KV

Ordering & Date Code Information: See Page 2

Weight: 0.006 grams (approximate)

S₂

G₂

D₁

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

Value

Units

±±

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 1)

V_GSS

Steady

State

T_A= 25°C

_A= ±5°C

540

390

I_D

I_DM

P_d

Pulsed Drain Current (Note 3)

1.5

200

Total Power Dissipation (Note 1)

°C/W

°C

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

625

T_j, T_STG

-65 to +150

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width £10mS, Duty Cycle £1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DS30935 Rev. 2 - 2

1 of 4

DMN2004DWK

www.diodes.com

ã Diodes Incorporated

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 10mA

V_DS= 16V, V_GS= 0V

I_GSS

_GS= ±4.5V, V_DS= 0V

±1

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V_GS(th)

V_DS= V_GS, I_D= 250mA

V_GS= 4.5V, I_D= 540mA

V_GS= 2.5V, I_D= 500mA

0.5

1.0

0.4

0.5

0.7

0.55

0.70

0.9

R_{DS (ON)}

Static Drain-Source On-Resistance

_GS= 1.±V, I_D= 350mA

V_DS=10V, I_D= 0.2A

|Y_fs|

V_SD

Forward Transfer Admittance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

200

0.5

V_GS= 0V, I_S= 115mA

1.4

C_iss

C_oss

C_rss

150

V_DS= 16V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Notes: 5. Short duration test pulse used to minimize self-heating effect.

0.9

1000

900

V_DS= 10V

Pulsed

V_GS= 2.2V

V_GS= 2.0V

800

V_GS= 1.8V

700

600

500

400

300

200

100

0.6

V_GS= 1.6V

V_GS= 1.4V

T_A= 150°C

0.3

T_A= 85°C

T_A= 25°C

T_A= -55°C

V_GS= 1.2V

0.4

0.8

1.2

1.6

V_GS, GATE-SOURCE VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

Fig. 2 Reverse Drain Current

vs. Source-Drain Voltage

V_GS= 10V

Pulsed

V_DS= 10V

I_D= 1mA

Pulsed

0.9

0.8

0.7

T_A= 125°C

T_A= 85°C

0.6

T_A= 150°C

0.5

0.4

0.3

0.2

T_A= -55°C

0.1

T_A= 25°C

T_A= 0°C

T_A= -25°C

0.1

-75 -50 -25

75 100 125

150

25 50

0.2

0.4

0.6

0.8

1.0

T_ch, CHANNEL TEMPERATURE (°C)

I_D, DRAIN CURRENT (A)

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

Fig. 4 Static Drain-Source On-Resistance

Vs. Drain Current

DS30935 Rev. 2 - 2

2 of 4

www.diodes.com

DMN2004DWK

1.0

0.9

T_A= 25°C

V_GS= 5V

Pulsed

0.8

0.7

0.6

T_A= 125°C

T_A= 85°C

T_A= 150°C

I_D= 540mA

0.5

0.4

0.3

T_A= -55°C

0.2

0.1

T_A= 25°C

T_A= 0°C

T_A= -25°C

0.1

0.6

1.0

1.2

0.2

0.8

0.4

V_GS, GATE-SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

Fig. 6 Static Drain-Source, On-Resistance

vs. Gate-Source Voltage

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

0.5

0.4

T_j= 25°C

0.9

V_GS= 1.8V

0.8

0.7

V_GS= 4.5V,

I_D= 540mA

0.3

0.2

0.1

0.6

0.5

0.4

V_GS= 10V,

I_D= 280mA

V_GS= 2.5V

V_GS= 4.5V

0.3

0.2

0.4

0.6

0.8

I_D, DRAIN CURRENT (A)

-50

100

-25

125

150

T_j, JUNCTION TEMPERATURE (°C)

Fig. 7 On-Resistance vs. Drain

Current and Gate Voltage

Fig. 8 Static Drain-Source, On-Resistance

vs. Temperature

10000

1000

100

V_GS= 0V

T_j= 150°C

T_A= 150°C

0.1

T_A= 125°C

T_A= 85°C

T_j= 100°C

T_A= 25°C

0.01

T_A= 0°C

T_A= -25°C

T_A= -55°C

0.1

0.001

12 14 16

0.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

V_SD, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Drain Source Leakage Current

vs. Voltage

Fig. 10 Reverse Drain Current

vs. Source-Drain Voltage

DS30935 Rev. 2 - 2

3 of 4

www.diodes.com

DMN2004DWK

120

100

T_A= -55°C

f = 1MHz

V_GS= 0V

V_GS= 10V

C_iss

T_A= 25°C

T_A= 85°C

0.1

T_A= 150°C

C_oss

C_rss

0.01

1000

100

14 16

10 12

I_D, DRAIN CURRENT (mA)

V_DS, DRAIN SOURCE VOLTAGE (V)

Fig. 12 Capacitance Variation

Fig. 11 Forward Transfer Admittance

vs. Drain Current

(Note 6)

Ordering Information

Device

Packaging

Shipping

DMN2004DWK-7

SOT-363

3000/Tape & Reel

Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

D₂

G₁

S₁

NAB = Marking Code

YM = Date Code Marking

Y = Year ex: T = 2006

NAB YM

M = Month ex: 9 = September

S₂

G₂

D₁

Date Code Key

Year

2006

2007

2008

2009

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further

notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither

does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will

agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.

LIFE SUPPORT

DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe

PresidentofDiodesIncorporated.

DS30935 Rev. 2 - 2

4 of 4

DMN2004DWK

www.diodes.com

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DMN2004DWK-7产品参数

型号:	DMN2004DWK-7
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	1.57
其他特性：	HIGH RELIABILITY
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	0.54 A
最大漏极电流 (ID)：	0.54 A
最大漏源导通电阻：	0.55 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	20 pF
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	2
端子数量：	6
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.2 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号DMN2004DWK-7的概述

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