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产品型号DMP3056LSS-13的概述

芯片DMP3056LSS-13的概述 DMP3056LSS-13是一款采用N沟道MOSFET构架的功率器件，广泛应用于电源管理、驱动电路等领域。它的优异性能使其在电子产品中得到了广泛的应用，特别是在高效能开关电源、直流-直流转换器和电池管理系统中。此器件的设计目标是为了实现高开关速度和低导通电阻，从而提高整体的功率效率。在许多现代电子设备中，对功率损耗的严格要求使得像DMP3056LSS-13这样的MOSFET备受关注。芯片DMP3056LSS-13的详细参数 DMP3056LSS-13的主要技术参数如下： 1. 最大漏极源极电压 (Vds): 30V 2. 最大漏极电流 (Id): 55A 3. 额定功率 (Pd): 70W 4. 导通电阻 (Rds(on)): 最大值为 12 mΩ 5. 开关时间 (ton/tfall): 典型值在几十纳秒范围 6. 工作温度范围: -55°C...

产品型号DMP3056LSS-13的Datasheet PDF文件预览

DMP3056LSS

SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Please click here to visit our online spice models database.

Features

Mechanical Data

•

Low On-Resistance

•

Case: SOP-8L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.072g (approximate)

•

45mΩ @ V_GS= -10V

65mΩ @ V_GS= -4.5V

•

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 4)

Qualified to AEC-Q101 Standards for High Reliability

•

SOP-8L

TOP VIEW

Internal Schematic

TOP VIEW

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-30

Units

Gate-Source Voltage

V_GSS

±20

Drain Current (Note 1)

Steady

State

T_A= 25°C

T_A= 70°C

-7.1

-6.0

I_D

Pulsed Drain Current (Note 3)

-20

I_DM

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

2.5

Unit

P_D

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

°C/W

R_θ

-55 to +150

°C

T_J,T_STG

Notes:

1. Device mounted on 1” x 1“ 2 oz. Copper pads on 2” x 2” FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

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www.diodes.com

September 2008

DMP3056LSS

Document number: DS31419 Rev. 6 - 2

DMP3056LSS

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Symbol

Min

Typ

Max

Unit

Test Condition

-30

BV_DSS

I_DSS

⎯

-1

V_GS= 0V, I_D= -250μA

V_DS= -30V, V_GS= 0V

⎯

μA

V_GS= ±20V, V_DS= 0V

±100

±800

Gate-Source Leakage

I_GSS

⎯

_GS= ±25V, V_DS= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-1

1.7

-2.1

V_GS(th)

V_DS= V_GS, I_D= -250μA

_GS= -10V, I_D= -6.0A

_GS= -4.5V, I_D= -5.0A

⎯

Static Drain-Source On-Resistance

R_{DS (ON)}

mΩ

Forward Transconductance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

g_fs

⎯

-0.5

⎯

-1.2

V_DS= -10V, I_D= -5.3A

V_GS= 0V, I_S= -1.7A

V_SD

⎯

722

114

C_iss

C_oss

C_rss

⎯

_DS= -25V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

V_DS= 0V, V_GS= 0V

f = 1.0MHz

Gate Resistance

3.3

R_G

⎯

SWITCHING CHARACTERISTICS

_DS= -15V, V_GS= -4.5V,

6.8

Q_G

⎯

I_D= -6A

Total Gate Charge

13.7

1.6

Q_G

Q_GS

Q_GD

t_d(on)

t_r

⎯

V_DS= -15V, V_GS= -10V,

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

_D= -6A

4.18

6.4

5.3

_DS= -15V, V_GS= -10V,

_D= -1A, R_G= 6.0Ω

Turn-Off Delay Time

Fall Time

26.5

14.7

t_d(off)

t_f

Notes:

5. Short duration pulse test used to minimize self-heating effect.

= -10V

= 5V

Pulsed

= -4.5V

= 150°C

= -3.0V

= 125°C

= 85°C

T = 25°C

= -1.5V

= -1.0V

= -55°C

= -2.5V

0.5

1.5

2.5

3.5

4.5

1.5

2.5

3.5

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

-V_GS, GATE SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

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www.diodes.com

September 2008

DMP3056LSS

Document number: DS31419 Rev. 6 - 2

DMP3056LSS

0.1

0.05

0.04

= -4.5V

= -5.0A

0.03

0.02

= -4.5V

= -10V

= -6.0A

0.01

-50 -25

75 100 125 150

0.1

-I_D, DRAIN-SOURCE CURRENT (A)

Fig. 3 On-Resistance vs. Drain Current & Gate Voltage

T_A, AMBIENT TEMPERATURE (°C)

Fig. 4 Static Drain-Source On-Resistance

vs. Ambient Temperature

10,000

2.8

f = 1MHz

I_D= -250µA

2.6

2.4

1,000

2.2

iss

1.8

1.6

1.4

oss

100

rss

1.2

-50 -25

75 100 125 150

T_A, AMBIENT TEMPERATURE (°C)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 6 Typical Total Capacitance

Fig. 5 Gate Threshold Variation vs. Ambient Temperature

0.1

= 150°C

= 125°C

0.01

= 85°C

= 25°C

= -55°C

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Fig. 7 Reverse Drain Current vs. Source-Drain Voltage

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www.diodes.com

September 2008

DMP3056LSS

Document number: DS31419 Rev. 6 - 2

DMP3056LSS

Ordering Information (Note 6)

Part Number

Case

Packaging

DMP3056LSS-13

SOP-8L

2500/Tape & Reel

Notes:

6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Top View

Logo

P3056LS

Part no.

YY WW

Xth week: 01~52

Year: "07" =2007

"08" =2008

Package Outline Dimensions

SOP-8L

Dim

Min

0.08

1.30

0.20 Typ.

0.3

Max

1.75

0.25

1.50

GAUGE PLANE

SEATING PLANE

0.5

DETAIL A

4.80

5.79

3.70

5.30

6.20

4.10

7°~9°

1.27 Typ.

0.35

1.27

8°

DETAIL A

0.38

0°

All Dimensions in mm

Suggested Pad Layout

Dimensions Value (in mm)

0.60

1.55

5.4

1.27

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages.

LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

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September 2008

DMP3056LSS

Document number: DS31419 Rev. 6 - 2

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DMP3056LSS-13产品参数

型号:	DMP3056LSS-13
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	DIODES INC
零件包装代码：	SOT
包装说明：	SOP-8
针数：	8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
Factory Lead Time：	15 weeks
风险等级：	1.59
Is Samacsys：	N
其他特性：	HIGH RELIABILITY
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	7.1 A
最大漏极电流 (ID)：	7.1 A
最大漏源导通电阻：	0.036 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2.5 W
最大脉冲漏极电流 (IDM)：	20 A
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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