EL5811IREZ原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

EL5611, EL5811

®

Data Sheet

August 3, 2005

FN7355.1

60MHz Rail-to-Rail Input-Output V

Amplifiers

Features

• 60MHz -3dB bandwidth

COM

The EL5611 and EL5811 are low power, high voltage rail-to-

rail input-output amplifiers targeted primarily at V

• Supply voltage = 4.5V to 16.5V

• Low supply current (per amplifier) = 2.5mA

• High slew rate = 75V/µs

COM

applications in TFT-LCD displays. The EL5611 contains six

amplifiers, and the EL5811 contains eight amplifiers.

Operating on supplies ranging from 5V to 15V, while

consuming only 2.5mA per amplifier, the EL5611 and

EL5811 have a bandwidth of 60MHz (-3dB). They also

provide common mode input ability beyond the supply rails,

as well as rail-to-rail output capability. This enables these

amplifiers to offer maximum dynamic range at any supply

voltage.

• Unity-gain stable

• Beyond the rails input capability

• Rail-to-rail output swing

• ±180mA output short current

• Pb-Free plus anneal available (RoHS compliant)

The EL5611 and EL5811 also feature fast slewing and

settling times, as well as a high output drive capability of

Applications

• TFT-LCD panels

65mA (sink and source). In addition to V

applications,

COM

these features make these amplifiers ideal for high speed

filtering and signal conditioning application. Other

applications include battery power, portable devices, and

anywhere low power consumption is important.

• V

COM

amplifiers

• Drivers for A-to-D converters

• Data acquisition

The EL5611 is available in 8-pin MSOP and 8-pin HMSOP

packages. The EL5811 is available in space-saving 28-pin

HTSSOP packages.These amplifiers operate over a

temperature range of -40°C to +85°C.

• Video processing

• Audio processing

• Active filters

• Test equipment

• Battery-powered applications

• Portable equipment

Ordering Information (Continued)

Ordering Information

TAPE &

PART NUMBER

PACKAGE

REEL

PKG. DWG. #

PART NUMBER

EL5611IRE

PACKAGE

REEL

PKG. DWG. #

MDP0048

EL5811IREZ-T13 28-Pin HTSSOP

(See Note) (Pb-Free)

13”

MDP0048

24-Pin HTSSOP

-

7”

13”

-

EL5611IRE-T7

EL5611IRE-T13

NOTE: Intersil Pb-free plus anneal products employ special Pb-free

material sets; molding compounds/die attach materials and 100%

matte tin plate termination finish, which are RoHS compliant and

compatible with both SnPb and Pb-free soldering operations. Intersil

Pb-free products are MSL classified at Pb-free peak reflow

temperatures that meet or exceed the Pb-free requirements of

IPC/JEDEC J STD-020.

EL5811IREZ

(See Note)

28-Pin HTSSOP

(Pb-free)

EL5811IREZ-T7

(See Note)

28-Pin HTSSOP

(Pb-free)

7”

13”

-

MDP0048

EL5811IREZ-T13 28-Pin HTSSOP

(See Note)

(Pb-free)

EL5811IREZ

(See Note)

28-Pin HTSSOP

(Pb-Free)

EL5811IREZ-T7

(See Note)

28-Pin HTSSOP

(Pb-Free)

7”

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

1

All other trademarks mentioned are the property of their respective owners.

EL5611, EL5811

Pinouts

EL5611

(24-PIN HTSSOP)

TOP VIEW

EL5811

(28-PIN HTSSOP)

TOP VIEW

VINH+

VINH-

VOUTH

VOUTG

VING-

VING+

VSS

VOUTA

VINA-

VINA+

VSS

VDD

VINA+

VINA-

1

2

24

1

2

28

VOUTF

VINF-

23

22

21

20

19

18

17

16

15

14

13

27

26

25

24

23

22

21

20

19

18

17

16

15

3

VINF+

VOUTE

VINE-

VINE+

VSS

VOUTA

VOUTB

VINB-

4

VOUTB

VINB-

VINB+

VDD

5

6

VINB+

VINC+

VINC-

7

VSS

8

VINF+

VINF-

VINC+

VINC-

VOUTC

NC

VOUTD+

VOUTD-

VOUTD

NC

9

VOUTC

VOUTD

VIND-

10

11

12

10

11

12

13

14

VOUTF

VOUTE

VINE-

VINE+

VIND+

VDD

FN7355.1

2

August 3, 2005

EL5611, EL5811

Absolute Maximum Ratings (T = 25°C)

A

Supply Voltage between V + and V -. . . . . . . . . . . . . . . . . . . .+18V

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves

S

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V - - 0.5V, V +0.5V

S

Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 65mA

Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .+125°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests

are at the specified temperature and are pulsed tests, therefore: T = T = T

A

J

C

Electrical Specifications V + = +5V, V - = -5V, R = 1kΩ to 0V, T = 25°C, Unless Otherwise Specified

S

L

A

PARAMETER

DESCRIPTION

CONDITIONS

MIN

TYP

MAX

15

UNIT

INPUT CHARACTERISTICS

V

Input Offset Voltage

V

= 0V

3

7

2

1

2

mV

µV/°C

nA

OS

TCV

CM

Average Offset Voltage Drift (Note 1)

Input Bias Current

OS

I

V

60

B

R

Input Impedance

GΩ

pF

IN

C

Input Capacitance

CMIR

Common-Mode Input Range

Common-Mode Rejection Ratio

Open-Loop Gain

-5.5

50

+5.5

V

CMRR

for V from -5.5V to 5.5V

IN

70

dB

A

-4.5V ≤ V

≤ 4.5V

OUT

62

dB

VOL

OUTPUT CHARACTERISTICS

V

Output Swing Low

Output Swing High

Short-Circuit Current

Output Current

I = -5mA

-4.92

4.92

±180

±65

-4.85

V

OL

L

I = 5mA

4.85

60

OH

L

I

mA

SC

OUT

POWER SUPPLY PERFORMANCE

PSRR Power Supply Rejection Ratio

Supply Current (Per Amplifier)

DYNAMIC PERFORMANCE

SR Slew Rate (Note 2)

V

is moved from ±2.25V to ±7.75V

80

dB

S

I

No load

2.5

3.75

mA

S

-4.0V ≤ V

≤ 4.0V, 20% to 80%

75

80

V/µs

ns

OUT

t

Settling to +0.1% (A = +1)

V

(A = +1), V = 2V step

S

V

O

BW

-3dB Bandwidth

60

MHz

°

GBWP

PM

Gain-Bandwidth Product

Phase Margin

32

50

CS

Channel Separation

Differential Gain (Note 3)

Differential Phase (Note 3)

f = 5MHz

110

0.17

0.24

dB

%

d

R

= R = 1kΩ and V

= 1.4V

G

P

F

G

OUT

= R = 1kΩ and V

°

G

NOTES:

1. Measured over operating temperature range.

2. Slew rate is measured on rising and falling edges.

3. NTSC signal generator used.

FN7355.1

3

August 3, 2005

EL5611, EL5811

Electrical Specifications V + = +5V, V - = 0V, R = 1kΩ to 2.5V, T = 25°C, Unless Otherwise Specified

S

L

A

PARAMETER

DESCRIPTION

CONDITION

MIN

TYP

MAX

15

UNIT

INPUT CHARACTERISTICS

V

Input Offset Voltage

V

= 2.5V

3

7

2

1

2

mV

µV/°C

nA

OS

TCV

CM

Average Offset Voltage Drift (Note 4)

Input Bias Current

OS

I

60

B

CM

R

Input Impedance

GΩ

pF

IN

C

Input Capacitance

CMIR

Common-Mode Input Range

Common-Mode Rejection Ratio

Open-Loop Gain

-0.5

45

+5.5

150

V

CMRR

for V from -0.5V to 5.5V

IN

66

70

dB

A

0.5V ≤ V

≤ 4.5V

OUT

62

dB

VOL

OUTPUT CHARACTERISTICS

V

Output Swing Low

Output Swing High

Short-circuit Current

Output Current

I = -5mA

80

mV

V

OL

L

I = 5mA

4.85

60

4.92

±180

±65

OH

L

I

mA

SC

OUT

POWER SUPPLY PERFORMANCE

PSRR Power Supply Rejection Ratio

Supply Current (Per Amplifier)

DYNAMIC PERFORMANCE

SR Slew Rate (Note 5)

V

is moved from 4.5V to 15.5V

80

dB

S

I

No load

2.5

3.75

mA

S

1V ≤ V

≤ 4V, 20% to 80%

75

80

V/µs

ns

OUT

t

Settling to +0.1% (A = +1)

V

(A = +1), V = 2V step

S

V

O

BW

-3dB Bandwidth

60

MHz

°

GBWP

PM

Gain-Bandwidth Product

Phase Margin

32

50

CS

Channel Separation

Differential Gain (Note 6)

Differential Phase (Note 6)

f = 5MHz

110

0.17

0.24

dB

%

d

R

= R = 1kΩ and V

= 1.4V

G

P

F

G

OUT

= R = 1kΩ and V

°

G

NOTES:

4. Measured over operating temperature range.

5. Slew rate is measured on rising and falling edges.

6. NTSC signal generator used.

FN7355.1

4

August 3, 2005

EL5611, EL5811

Electrical Specifications V + = +15V, V - = 0V, R = 1kΩ to 7.5V, T = 25°C, Unless Otherwise Specified

S

L

A

PARAMETER

DESCRIPTION

CONDITION

MIN

TYP

MAX

15

UNIT

INPUT CHARACTERISTICS

V

Input Offset Voltage

V

= 7.5V

3

7

2

1

2

mV

µV/°C

nA

OS

TCV

CM

Average Offset Voltage Drift (Note 7)

Input Bias Current

OS

I

V

60

B

CM

R

C

Input Impedance

GΩ

pF

IN

Input Capacitance

CMIR

Common-Mode Input Range

Common-Mode Rejection Ratio

Open-Loop Gain

-0.5

53

+15.5

150

V

CMRR

for V from -0.5V to 15.5V

IN

72

70

dB

A

0.5V ≤ V

≤ 14.5V

OUT

62

dB

VOL

OUTPUT CHARACTERISTICS

V

Output Swing Low

Output Swing High

Short-circuit Current

Output Current

I = -5mA

80

mV

V

OL

L

I = 5mA

14.85

60

14.92

±180

±65

OH

L

I

mA

SC

OUT

POWER SUPPLY PERFORMANCE

PSRR Power Supply Rejection Ratio

Supply Current (Per Amplifier)

DYNAMIC PERFORMANCE

SR Slew Rate (Note 8)

V

is moved from 4.5V to 15.5V

80

dB

S

I

No load

2.5

3.75

mA

S

1V ≤ V

≤ 14V, 20% to 80%

75

80

V/µs

ns

OUT

t

Settling to +0.1% (A = +1)

V

(A = +1), V = 2V step

S

V

O

BW

-3dB Bandwidth

60

MHz

°

GBWP

PM

Gain-Bandwidth Product

Phase Margin

32

50

CS

Channel Separation

Differential Gain (Note 9)

Differential Phase (Note 9)

f = 5MHz

110

0.16

0.22

dB

%

d

R

= R = 1kΩ and V

= 1.4V

G

P

F

G

OUT

= R = 1kΩ and V

°

G

NOTES:

7. Measured over operating temperature range

8. Slew rate is measured on rising and falling edges

9. NTSC signal generator used

FN7355.1

5

August 3, 2005

EL5611, EL5811

Typical Performance Curves

500

25

20

15

10

5

V =±5V

TYPICAL

V =±5V

TYPICAL

S

T =25°C

PRODUCTION

DISTRIBUTION

PRODUCTION

DISTRIBUTION

A

400

300

200

100

0

INPUT OFFSET VOLTAGE (mV)

INPUT OFFSET VOLTAGE DRIFT, TCV

(µV/°C)

OS

FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION

FIGURE 2. INPUT OFFSET VOLTAGE DRIFT

2

1.5

1

0.008

V =±5V

S

0.004

0

0.5

0

-0.004

-0.008

-0.012

-0.5

-50

-10

30

70

110

150

-50

-10

30

70

110

150

TEMPERATURE (°C)

FIGURE 3. INPUT OFFSET VOLTAGE vs TEMPERATURE

4.96

FIGURE 4. INPUT BIAS CURRENT vs TEMPERATURE

-4.85

V =±5V

S

I

=5mA

OUT

I

=5mA

OUT

-4.87

-4.89

-4.91

-4.93

-4.95

4.94

4.92

4.90

4.88

4.86

-50

-10

30

70

110

150

-50

-10

30

70

110

150

TEMPERATURE (°C)

FIGURE 5. OUTPUT HIGH VOLTAGE vs TEMPERATURE

FIGURE 6. OUTPUT LOW VOLTAGE vs TEMPERATURE

FN7355.1

August 3, 2005

6

EL5611, EL5811

Typical Performance Curves (Continued)

75

78

77

76

75

74

73

72

V =±5V

S

R =1kΩ

L

70

65

60

-50

-10

30

70

110

150

-50

-10

30

70

110

150

TEMPERATURE (°C)

FIGURE 7. OPEN-LOOP GAIN vs TEMPERATURE

2.9

FIGURE 8. SLEW RATE vs TEMPERATURE

2.7

T =25°C

V =±5V

S

A

2.7

2.5

2.3

2.1

1.9

1.7

1.5

2.65

2.6

2.55

2.5

2.45

2.4

4

8

12

16

20

-50

-10

30

70

110

150

SUPPLY VOLTAGE (V)

TEMPERATURE (°C)

FIGURE 9. SUPPLY CURRENT PER AMPLIFIER vs SUPPLY

VOLTAGE

FIGURE 10. SUPPLY CURRENT PER AMPLIFIER vs

TEMPERATURE

0

-0.02

-0.04

-0.06

-0.08

-0.1

0.3

0.25

0.2

0.15

0.1

-0.12

-0.14 V =±5V

S

0.05

0

A =2

V

-0.16

-0.18

R =1kΩ

L

0

100

IRE

200

0

100

IRE

200

FIGURE 11. DIFFERENTIAL GAIN

FIGURE 12. DIFFERENTIAL PHASE

FN7355.1

August 3, 2005

7

EL5611, EL5811

Typical Performance Curves (Continued)

-30

80

60

40

20

0

250

190

130

70

V =±5V

S

A =2

-40

-50

-60

-70

-80

-90

V

R =1kΩ

L

GAIN

FREQ=1MHz

2nd HD

PHASE

10

3rd HD

4

-20

-50

0

2

6

8

10

1K

10K

100K

1M

10M

100M

V

(V)

FREQUENCY (Hz)

OP-P

FIGURE 13. HARMONIC DISTORTION vs V

FIGURE 14. OPEN LOOP GAIN AND PHASE

25

OP-P

5

V =±5V

S

100pF

A =1

V

1000pF

15

C

=0pF

3

1

LOAD

1kΩ

47pF

10pF

5

-5

-1

-3

-5

560Ω

150Ω

V =±5V

S

-15

-25

A =1

V

R =1kΩ

L

100K

1M

10M

100M

100K

1M

10M

100M

FREQUENCY (Hz)

FIGURE 15. FREQUENCY RESPONSE FOR VARIOUS R

FIGURE 16. FREQUENCY RESPONSE FOR VARIOUS C

L

400

350

300

250

200

150

100

50

12

10

8

6

4

V =±5V

S

A =1

V

2

R =1kΩ

L

DISTORTION <1%

0

10K

100K

1M

10M

100M

10K

100K

1M

10M

100M

FREQUENCY (Hz)

FREQUENCY (kHz)

FIGURE 17. CLOSED LOOP OUTPUT IMPEDANCE

FIGURE 18. MAXIMUM OUTPUT SWING vs FREQUENCY

FN7355.1

August 3, 2005

8

EL5611, EL5811

Typical Performance Curves (Continued)

-15

-25

-35

-45

-55

-65

-80

-60

-40

-20

0

PSRR+

PSRR-

V =±5V

S

T =25°C

A

1K

10K

100K

1M

10M

100M

100

1K

10K

100K

1M

10M

FREQUENCY (Hz)

FIGURE 19. CMRR

FIGURE 20. PSRR

-60

-80

1K

DUAL MEASURED CH A TO B

QUAD MEASURED CH A TO D OR B TO C

OTHER COMBINATIONS YIELD

IMPROVED REJECTION

100

10

1

-100

-120

-140

-160

V =±5V

S

R =1kΩ

L

A =1

V

IN

V

=110mV

RMS

100

1K

10K

100K

1M

10M

100M

1K

10K

100K

FREQUENCY (Hz)

1M

10M

30M

FREQUENCY (Hz)

FIGURE 21. INPUT VOLTAGE NOISE SPECTRAL DENSITY

100

FIGURE 22. CHANNEL SEPARATION

5

4

3

2

1

V =±5V

S

V =±5V

S

A =1

V

A =1

V

R =1kΩ

L

80

60

40

20

0

L

0.1%

V

=±50mV

IN

T =25°C

A

0

-1

-2

-3

-4

-5

0.1%

10

100

1K

55

65

75

85

95

105

LOAD CAPACITANCE (pF)

SETTLING TIME (ns)

FIGURE 23. SMALL-SIGNAL OVERSHOOT vs LOAD

CAPACITANCE

FIGURE 24. SETTLING TIME vs STEP SIZE

FN7355.1

August 3, 2005

9

EL5611, EL5811

Typical Performance Curves (Continued)

V =±5V

S

V =±5V

S

T =25°C

A

T =25°C

A

A =1

V

A =1

V

R =1kΩ

L

100mV STEP

1V STEP

50ns/DIV

FIGURE 25. LARGE SIGNAL TRANSIENT RESPONSE

FIGURE 26. SMALL SIGNAL TRANSIENT RESPONSE

Pin Descriptions

EL5611

EL5811

NAME

FUNCTION

Amplifiers output

EQUIVALENT CIRCUIT

1, 5, 9, 14, 20, 23 4, 5, 10, 11, 17,

18, 25, 26

VOUTx

V

S+

V

S-

GND

CIRCUIT 1

2, 3, 6, 7, 9, 10, 2, 3, 6, 7, 8, 9, 12.

VINx

Amplifiers input

V

S+

S-

15, 16, 21, 22

13, 15, 16, 19, 20,

23, 24, 27, 28

CIRCUIT 2

8, 24

24, 17

12, 13

1, 14

VS+

VS-

NC

Positive power supply

Negative power supply

Not connected

21, 22

FN7355.1

10

August 3, 2005

EL5611, EL5811

continuous current never exceeds ±65mA. This limit is set by

Applications Information

Product Description

the design of the internal metal interconnects.

Output Phase Reversal

The EL5611 and EL5811 voltage feedback amplifiers are

fabricated using a high voltage CMOS process. They exhibit

rail-to-rail input and output capability, are unity gain stable

and have low power consumption (2.5mA per amplifier).

These features make the EL5611, and EL5811 ideal for a

wide range of general-purpose applications. Connected in

voltage follower mode and driving a load of 1kΩ, the EL5611

and EL5811 have a -3dB bandwidth of 60MHz while

maintaining a 75V/µs slew rate. The EL5611 a six channel

amplifier, and the EL5811 an 8 channel amplifier.

The EL5611 and EL5811 are immune to phase reversal as

long as the input voltage is limited from V - -0.5V to V +

S

+0.5V. Figure 28 shows a photo of the output of the device

with the input voltage driven beyond the supply rails.

Although the device's output will not change phase, the

input's overvoltage should be avoided. If an input voltage

exceeds supply voltage by more than 0.6V, electrostatic

protection diodes placed in the input stage of the device

begin to conduct and overvoltage damage could occur.

Operating Voltage, Input, and Output

V

= ±2.5V, T = 25°C, A = 1, V = 6V

IN P-P

S

A

V

The EL5611and EL5811 are specified with a single nominal

supply voltage from 5V to 15V or a split supply with its total

range from 5V to 15V. Correct operation is guaranteed for a

supply range of 4.5V to 16.5V. Most EL5611 and EL5811

specifications are stable over both the full supply range and

operating temperatures of -40°C to +85°C. Parameter

variations with operating voltage and/or temperature are

shown in the typical performance curves.

1V

10µs

The input common-mode voltage range of the EL5611 and

EL5811 extends 500mV beyond the supply rails. The output

swings of the EL5611 and EL5811 typically extend to within

100mV of positive and negative supply rails with load

currents of 5mA. Decreasing load currents will extend the

output voltage range even closer to the supply rails. Figure

27 shows the input and output waveforms for the device in

the unity-gain configuration. Operation is from ±5V supply

1V

FIGURE 28. OPERATION WITH BEYOND-THE-RAILS INPUT

Power Dissipation

With the high-output drive capability of the EL5611 and

EL5811 amplifiers, it is possible to exceed the 125°C

'absolute-maximum junction temperature' under certain load

current conditions. Therefore, it is important to calculate the

maximum junction temperature for the application to

determine if load conditions need to be modified for the

amplifier to remain in the safe operating area.

with a 1kΩ load connected to GND. The input is a 10V

P-P

sinusoid. The output voltage is approximately 9.8V

.

P-P

V

= ±5V, T = 25°C, A = 1, V = 10V

IN P-P

S

A

V

5V

10µs

The maximum power dissipation allowed in a package is

determined according to:

T

– T

AMAX

JMAX

--------------------------------------------

P

=

DMAX

Θ

JA

where:

5V

• T

= Maximum junction temperature

= Maximum ambient temperature

JMAX

AMAX

FIGURE 27. OPERATION WITH RAIL-TO-RAIL INPUT AND

OUTPUT

• Θ = Thermal resistance of the package

JA

• P

DMAX

= Maximum power dissipation in the package

Short Circuit Current Limit

The maximum power dissipation actually produced by an IC

is the total quiescent supply current times the total power

supply voltage, plus the power in the IC due to the loads, or:

The EL5611 and EL5811 will limit the short circuit current to

±180mA if the output is directly shorted to the positive or the

negative supply. If an output is shorted indefinitely, the power

dissipation could easily increase such that the device may

be damaged. Maximum reliability is maintained if the output

P

= Σi[V × I

+ (V + – V

i) × I

i]

LOAD

DMAX

S

SMAX

S

OUT

FN7355.1

11

August 3, 2005

EL5611, EL5811

when sourcing, and:

JEDEC JESD51-3 LOW EFFECTIVE THERMAL

CONDUCTIVITY TEST BOARD

P

= Σi[V × I

+ (V

i – V -) × I

i]

LOAD

DMAX

S

SMAX

OUT

S

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

909mW

when sinking,

where:

833mW

HTSSOP28

JA

θ

=110°C/W

• i = 1 to 6 for EL5611 and 1 to 8 for EL5811

• V = Total supply voltage

HTSSOP24

=120°C/W

θ

JA

S

• I

= Maximum supply current per amplifier

i = Maximum output voltage of the application

i = Load current

SMAX

• V

• I

OUT

0

25

50

75 85 100

125

150

LOAD

AMBIENT TEMPERATURE (°C)

If we set the two P

equations equal to each other, we

DMAX

i to avoid device overheat. Figures 29

can solve for R

LOAD

FIGURE 30. PACKAGE POWER DISSIPATION vs AMBIENT

TEMPERATURE

and 30 provide a convenient way to see if the device will

overheat. The maximum safe power dissipation can be

found graphically, based on the package type and the

ambient temperature. By using the previous equation, it is a

Unused Amplifiers

It is recommended that any unused amplifiers in a dual and

a quad package be configured as a unity gain follower. The

inverting input should be directly connected to the output

and the non-inverting input tied to the ground plane.

simple matter to see if P

exceeds the device's power

DMAX

derating curves. To ensure proper operation, it is important

to observe the recommended derating curves shown in

Figures 29 & 30.

Power Supply Bypassing and Printed Circuit

Board Layout

JEDEC JESD51-7 HIGH EFFECTIVE THERMAL

CONDUCTIVITY TEST BOARD - HTSSOP

EXPOSED DIEPAD SOLDERED TO PCB PER

JESD51-5

The EL5611 and EL5811 can provide gain at high frequency.

As with any high-frequency device, good printed circuit

board layout is necessary for optimum performance. Ground

plane construction is highly recommended, lead lengths

should be as short as possible and the power supply pins

must be well bypassed to reduce the risk of oscillation. For

3.5

3.333W

3

3.030W

2.5

HTSSOP28

θ

=30°C/W

2

1.5

1

JA

normal single supply operation, where the V - pin is

S

HTSSOP24

=33°C/W

connected to ground, a 0.1µF ceramic capacitor should be

θ

JA

placed from V + to pin to V - pin. A 4.7µF tantalum

S

capacitor should then be connected in parallel, placed in the

region of the amplifier. One 4.7µF capacitor may be used for

multiple devices. This same capacitor combination should be

placed at each supply pin to ground if split supplies are to be

used.

0.5

0

25

50

75 85 100

125

150

AMBIENT TEMPERATURE (°C)

FIGURE 29. PACKAGE POWER DISSIPATION vs AMBIENT

TEMPERATURE

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN7355.1

12

August 3, 2005

型号:	EL5811IREZ
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	INTERSIL CORP
零件包装代码：	SSOP
包装说明：	HTSSOP,
针数：	28
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8542.33.00.01
风险等级：	5.66
Is Samacsys：	N
标称带宽：	60000 kHz
商用集成电路类型：	VIDEO AMPLIFIER
JESD-30 代码：	R-PDSO-G28
JESD-609代码：	e3
长度：	9.7 mm
湿度敏感等级：	3
信道数量：	1
功能数量：	8
端子数量：	28
最高工作温度：	85 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	HTSSOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	16 V
最小供电电压 (Vsup)：	4.5 V
表面贴装：	YES
技术：	CMOS
温度等级：	INDUSTRIAL
端子面层：	MATTE TIN
端子形式：	GULL WING
端子节距：	0.65 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
宽度：	4.4 mm
Base Number Matches：	1

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