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产品型号EL7551CUZ-T7的Datasheet PDF文件预览

EL7551  
®
March 21, 2006  
FN7291.1  
Monolithic 1Amp DC:DC Step-down  
Regulator  
Features  
• Integrated synchronous MOSFETs and current mode  
controller  
The EL7551 is an integrated, synchronous step-down  
regulator with output voltage adjustable from 1.0V to 3.8V. It  
is capable of delivering 1A continuous current at up to 95%  
efficiency. The EL7551 operates at a constant frequency  
pulse width modulation (PWM) mode, making external  
synchronization possible. Patented on-chip resistorless  
current sensing enables current mode control, which  
provides cycle-by-cycle current limiting, over-current  
protection, and excellent step load response. The EL7551 is  
available in a fused-lead 16-pin QSOP package. With proper  
external components, the whole converter fits into a less  
• 1A continuous output current  
• Up to 95% efficiency  
• 4.5V to 5.5V input voltage  
• Adjustable output from 1V to 3.8V  
• Cycle-by-cycle current limit  
• Precision reference  
• ±0.5% load and line regulation  
• Adjustable switching frequency to 1.2MHz  
• Oscillator synchronization possible  
• Internal soft start  
2
than 0.4 in area. The minimal external components and  
small size make this EL7551 ideal for desktop and portable  
applications.  
The EL7551 is specified for operation over the -40°C to  
+85°C temperature range.  
• Over temperature protection  
• Under voltage lockout  
Pinout  
• 16-pin QSOP package  
EL7551  
(16-PIN QSOP)  
TOP VIEW  
Pb-free plus anneal available (RoHS compliant)  
Applications  
• DSP, CPU Core and IO Supplies  
• Logic/Bus Supplies  
1
2
3
4
5
6
7
8
SGND PGND 16  
C3 C4  
C5  
0.1µF 270pF  
COSC  
VDD  
PGND  
PGND  
VIN  
VREF 15  
FB 14  
0.1µF  
R3  
R2  
• Portable Equipment  
R1  
39  
2.37kΩ  
• DC:DC Converter Modules  
• GTL + Bus Power Supply  
1kΩ  
VDRV 13  
LX 12  
L1  
C1  
10µH  
C
7
V
O
C6  
(3.3V,1A)  
10µF  
ceramic  
47µF  
LX 11  
Ordering Information  
0.1µF  
VIN  
VHI 10  
V
PART  
TAPE &  
REEL  
PKG.  
DWG. #  
IN  
(4.5V-5.5V)  
EN  
PGND  
9
PART NUMBER MARKING PACKAGE  
EL7551CU  
7551CU  
7551CU  
16-Pin QSOP  
16-Pin QSOP  
16-Pin QSOP  
-
7”  
13”  
-
MDP0040  
MDP0040  
MDP0040  
MDP0040  
EL7551CU-T7  
EL7551CU-T13 7551CU  
EL7551CUZ  
(See Note)  
7551CUZ 16-Pin QSOP  
(Pb-free)  
Manufactured under U.S. Patent No. 57,323,974  
EL7551CUZ-T7 7551CUZ 16-Pin QSOP  
(See Note) (Pb-free)  
7”  
MDP0040  
MDP0040  
EL7551CUZ-T13 7551CUZ 16-Pin QSOP  
(See Note) (Pb-free)  
13”  
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material  
sets; molding compounds/die attach materials and 100% matte tin plate  
termination finish, which are RoHS compliant and compatible with both SnPb  
and Pb-free soldering operations. Intersil Pb-free products are MSL classified  
at Pb-free peak reflow temperatures that meet or exceed the Pb-free  
requirements of IPC/JEDEC J STD-020.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2002, 2003, 2006. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
EL7551  
Absolute Maximum Ratings (T = 25°C)  
A
Supply Voltage between V or V  
IN  
and GND . . . . . . . . . . . . +6.5V  
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C  
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . +135°  
DD  
V
Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V +0.3V  
LX  
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V  
IN  
+0.3V  
DD  
V
Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V, V +6V  
HI  
LX  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests  
are at the specified temperature and are pulsed tests, therefore: T = T = T  
A
J
C
DC Electrical Specifications  
V
= V = 5V, T = T = 25°C, C  
= 1.2nF, unless otherwise specified.  
DD  
DESCRIPTION  
Reference Accuracy  
IN  
A
J
OSC  
PARAMETER  
CONDITIONS  
MIN  
TYP  
1.26  
50  
MAX  
UNIT  
V
V
1.24  
1.28  
REF  
V
V
V
Reference Temperature Coefficient  
Reference Load Regulation  
Oscillator Ramp Amplitude  
Oscillator Charge Current  
ppm/°C  
%
REFTC  
0 < I  
< 50µA  
-1  
REFLOAD  
RAMP  
REF  
1.15  
200  
8
V
I
I
I
I
0.1V < V  
0.1V < V  
< 1.25V  
< 1.25V  
µA  
mA  
mA  
mA  
V
OSC_CHG  
OSC_DIS  
OSC  
OSC  
Oscillator Discharge Current  
+V  
V
V
V
V
+V  
Supply Current  
Standby Current  
V
= 4V, F  
OSC  
= 120kHz  
3.5  
1
5
1.5  
4
VDD DRV  
DD DRV  
EN  
EN = 0  
VDD_OFF  
DD  
DD  
DD  
V
V
for Shutdown  
for Startup  
3.5  
DD_OFF  
DD_ON  
OT  
3.95  
4.45  
V
T
T
Over Temperature Threshold  
Over Temperature Hysteresis  
Internal FET Leakage Current  
Peak Current Limit  
135  
20  
°C  
°C  
HYS  
I
I
EN = 0, L = 5V (low FET), L = 0V (high FET)  
10  
95  
µA  
A
LEAK  
LMAX  
X
X
2
R
R
FET On Resistance  
Wafer level test only  
45  
0.2  
m  
m/°C  
V
DSON  
R
Tempco  
DSON  
DSONTC  
FB  
V
V
V
V
Output Initial Accuracy  
Output Line Regulation  
Output Load Regulation  
Output Temperature Stability  
Feedback Input Pull Up Current  
EN Input High Level  
I
= 0A  
0.960  
0.975  
0.5  
0.99  
LOAD  
V
= 5V, V = 10%, I  
= 0A  
%
FB_LINE  
FB_LOAD  
FB_TC  
IN  
IN  
< 1A  
LOAD  
0.1A < I  
0.5  
%
LOAD  
-40°C < T < 85°C, I  
= 0.5A  
LOAD  
±1  
%
A
I
V
= 0V  
100  
3.2  
200  
4
nA  
V
FB  
FB  
V
V
EN_HI  
EN Input Low Level  
1
V
EN_LO  
I
Enable Pull Up Current  
V
= 0  
-4  
-2.5  
µA  
EN  
EN  
2
EL7551  
Closed-Loop AC Electrical Specifications  
V
= V = 5V, T = T = 25°C, C  
= 1.2nF, unless otherwise specified.  
OSC  
S
IN  
A
J
PARAMETER  
DESCRIPTION  
Oscillator Initial Accuracy  
CONDITIONS  
MIN  
TYP  
117  
25  
MAX  
UNIT  
kHz  
ns  
F
105  
130  
OSC  
t
Minimum Oscillator Sync Width  
Soft Start Slope  
SYNC  
M
0.5  
15  
V/ms  
ns  
SS  
BRM  
LEB  
t
t
FET Break Before Make Delay  
High Side FET Minimum On Time  
Maximum Duty Cycle  
150  
95  
ns  
D
%
MAX  
Pin Descriptions  
PIN  
NUMBER  
PIN NAME  
SGND  
COSC  
VDD  
PGND  
PGND  
VIN  
PIN FUNCTION  
1
2
Control circuit negative supply.  
Oscillator timing capacitor. FOSC can be approximated by: FOSC (kHz) = 0.1843/COSC, COSC in µF.  
Control circuit positive supply.  
3
4
Ground return of the regulator. Connected to the source of the low-side synchronous NMOS power FET.  
Ground return of the regulator. Connected to the source of the low-side synchronous NMOS power FET.  
Power supply input of the regulator. Connected to the drain of the high-side NMOS power FET.  
Power supply input of the regulator. Connected to the drain of the high-side NMOS power FET.  
Chip Enable, active high. A 2µA internal pull-up current enables the device if the pin is left open.  
Ground return of the regulator.  
5
6
7
VIN  
8
EN  
9
PGND  
VHI  
10  
11  
12  
13  
14  
Positive supply of the high-side driver.  
LX  
Inductor drive pin. High current digital output whose average voltage equals the regulator output voltage.  
Inductor drive pin. High current digital output whose average voltage equals the regulator output voltage.  
Positive supply of the low-side driver and input voltage for the high-side boot strap.  
LX  
VDRV  
FB  
Voltage feedback input. Connected to an external resistor divider between VOUT and GND. A 125nA pull-up current  
forces VOUT to VS in the event that FB is floating.  
15  
16  
VREF  
PGND  
Bandgap reference bypass capacitor. Typically 0.1µF to GND.  
Ground return of the regulator.  
3
EL7551  
Typical Performance Curves  
Efficiency vs I  
O
IN  
Power Loss vs I  
O
IN  
V
=5V  
V =5V  
100  
95  
90  
85  
80  
75  
70  
65  
60  
0.25  
0.2  
0.15  
0.1  
0.05  
0
V
=2.5V  
V
=1.8V  
V =1.5V  
O
O
O
V
=1.2V  
O
V
=1V  
O
V
=3.3V  
V =3.3V  
O
O
F
=500kHz  
S
V
=1V  
O
L=Coilcraft DO3316P-472  
0.1  
0.2  
0.4  
0.6 0.8  
1
0
0.2  
0.4  
0.6  
0.8  
1
Load Current I (A)  
O
Output Current I (A)  
O
Efficiency vs I  
O
O
Load Regulation  
V =3.3V  
O
V
=3.3V  
100  
95  
90  
85  
80  
75  
70  
65  
60  
0.6  
0.4  
0.2  
0
V
=4.5V  
IN  
V
=5.5V  
IN  
V
=5V  
IN  
V
=5V  
IN  
V
=5.5V  
IN  
V
=4.5V  
IN  
-0.2  
-0.4  
-0.6  
F
=500kHz  
S
L=Coilcraft DO3316P-472  
0
0.2  
0.4  
0.6  
0.8  
1
0
0.2  
0.4  
0.6  
0.8  
1
Load Current I (A)  
Load Current I (A)  
O
O
Line Regulation  
=3.3V  
V
vs Temperature  
REF  
V
O
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.258  
1.256  
1.254  
1.252  
1.25  
I
=0.1A  
O
I
=1A  
O
1.248  
1.246  
1.244  
1.242  
-0.1  
-0.2  
-0.3  
-0.4  
4.5  
4.7  
4.9  
5.1  
5.3  
5.5  
-40  
10  
60  
Temperature (°C)  
110  
160  
V
(V)  
IN  
4
EL7551  
Typical Performance Curves (Continued)  
Oscillator Frequency vs Temperature  
390  
Input Current vs Temperature  
(Enable connected to GND)  
0.96  
0.94  
0.92  
0.9  
V
=5.5V  
IN  
385  
380  
375  
370  
365  
360  
V
=5V  
V =4.5V  
IN  
IN  
0.88  
0.86  
0.84  
0.82  
0.8  
-40  
0
40  
80  
120  
-40  
10  
60  
110  
160  
Temperature (°C)  
Temperature (°C)  
Switching Waveforms  
=5V, V =3.8V, I =1A  
Switching Frequency vs C  
OSC  
V
IN  
O
O
1400  
1200  
1000  
800  
600  
400  
200  
0
V  
I
V
LX  
V  
O
i
L
0
200  
400  
C
600  
(pF)  
800  
1000  
OSC  
Transient Response  
=5V, V =3.8V, I =0A-1A  
Power-Up  
V =5V, V =3.8V, I =1A  
IN  
V
IN  
O
O
O
O
i
V
IN  
O
V  
V
O
O
5
EL7551  
Typical Performance Curves (Continued)  
Power-Down  
Releasing EN  
V =5V, V =3.8V, I =1A  
IN  
V
=5V, V =3.8V, I =1A  
IN  
O
O
O
O
V
IN  
V
O
V
IN  
V
O
Shut-Down  
=5V, V =3.8V, I =1A  
Short-Circuit Protection  
V =5V  
IN  
V
IN  
O
O
E
N
i
O
V
O
V
O
Block Diagram  
0.1µF  
270pF  
VREF  
COSC  
Voltage  
Reference  
Thermal  
Shut-down  
VDRV  
Oscillator  
Controller  
Supply  
VHI  
VIN  
39Ω  
VDD  
Power  
FET  
0.1µF  
10µH  
0.1µF  
PWM  
Controller  
Drivers  
V
OUT  
Power  
FET  
2370Ω  
1kΩ  
47µF  
PGND  
EN  
Current  
Sense  
SGND  
FB  
6
EL7551  
instability that occurs in current-mode topologies operating  
at duty-cycles greater than 50% and is also used to define  
the open-loop gain of the overall system. The slope  
Applications Information  
Circuit Description  
General  
compensation is fixed internally and optimized for 500mA  
inductor ripple current. The power tracking will not contribute  
any input to the comparator steady-state operation. Current  
feedback is measured by the patented sensing scheme that  
senses the inductor current flowing through the high-side  
switch whenever it is conducting. At the beginning of each  
oscillator period the high-side NMOS switch is turned on.  
The comparator inputs are gated off for a minimum period of  
time of about 150ns (LEB) after the high-side switch is  
turned on to allow the system to settle. The Leading Edge  
Blanking (LEB) period prevents the detection of erroneous  
voltages at the comparator inputs due to switching noise. If  
the inductor current exceeds the maximum current limit  
(ILMAX) a secondary over-current comparator will terminate  
the high-side switch on time. If ILMAX has not been reached,  
the feedback voltage FB derived from the regulator output  
voltage VOUT is then compared to the internal feedback  
reference voltage. The resultant error voltage is summed  
with the current feedback and slope compensation ramp.  
The high-side switch remains on until all four comparator  
inputs have summed to zero, at which time the high-side  
switch is turned off and the low-side switch is turned on.  
However, the maximum on-duty ratio of the high-side switch  
is limited to 95%. In order to eliminate cross-conduction of  
the high-side and low-side switches a 15ns break-before-  
make delay is incorporated in the switch drive circuitry. The  
output enable (EN) input allows the regulator output to be  
disabled by an external logic control signal.  
The EL7551 is a fixed frequency, current mode controlled  
DC:DC converter with integrated N-channel power  
MOSFETs and a high precision reference. The device  
incorporates all the active circuitry required to implement a  
cost effective, user-programmable 1A synchronous step-  
down regulator suitable for use in DSP core power supplies.  
Theory of Operation  
The EL7551 is composed of 5 major blocks:  
1. PWM Controller  
2. NMOS Power FETs and Drive Circuitry  
3. Bandgap Reference  
4. Oscillator  
5. Thermal Shut-down  
PWM Controller  
The EL7551 regulates output voltage through the use of  
current-mode controlled pulse width modulation. The three  
main elements in a PWM controller are the feedback loop  
and reference, a pulse width modulator whose duty cycle is  
controlled by the feedback error signal, and a filter which  
averages the logic level modulator output. In a step-down  
(buck) converter, the feedback loop forces the time-averaged  
output of the modulator to equal the desired output voltage.  
Unlike pure voltage-mode control systems, current-mode  
control utilizes dual feedback loops to provide both output  
voltage and inductor current information to the controller.  
The voltage loop minimizes DC and transient errors in the  
output voltage by adjusting the PWM duty-cycle in response  
to changes in line or load conditions. Since the output  
voltage is equal to the time-averaged of the modulator  
output, the relatively large LC time constant found in power  
supply applications generally results in low bandwidth and  
poor transient response. By directly monitoring changes in  
inductor current via a series sense resistor the controller's  
response time is not entirely limited by the output LC filter  
and can react more quickly to changes in line and load  
conditions. This feed-forward characteristic also simplifies  
AC loop compensation since it adds a zero to the overall  
loop response. Through proper selection of the current-  
feedback to voltage-feedback ratio the overall loop response  
will approach a one-pole system. The resulting system offers  
several advantages over traditional voltage control systems,  
including simpler loop compensation, pulse by pulse current  
limiting, rapid response to line variation and good load step  
response.  
Output Voltage Setting  
In general:  
R
2
V
= 0.975V × 1 + ------  
OUT  
R
1
However, due to the relatively low open loop gain of the  
system, gain errors will occur as the output voltage and loop-  
gain is changed. This is shown in the performance curves. A  
100nA pull-up current from FB to VDD forces VOUT to GND  
in the event that FB is floating.  
NMOS Power FETs and Drive Circuitry  
The EL7551 integrates low on-resistance (60m) NMOS  
FETs to achieve high efficiency at 1A. In order to use an  
NMOS switch for the high-side drive it is necessary to drive  
the gate voltage above the source voltage (LX). This is  
accomplished by bootstrapping the VHI pin above the LX  
voltage with an external capacitor CVHI and internal switch  
and diode. When the low-side switch is turned on and the LX  
voltage is close to GND potential, capacitor CVHI is charged  
through internal switch to VDRV, typically 5V. At the  
The heart of the controller is an input direct summing  
comparator which sum voltage feedback, current feedback,  
slope compensation ramp and power tracking signals  
together. Slope compensation is required to prevent system  
beginning of the next cycle the high-side switch turns on and  
the LX pins begin to rise from GND to VIN potential. As the  
7
EL7551  
LX pin rises the positive plate of capacitor CVHI follows and  
eventually reaches a value of VDRV+VIN, typically 10V, for  
VDRV=VIN=5V. This voltage is then level shifted and used to  
drive the gate of the high-side FET, via the VHI pin. A value  
of 0.1µF for CVHI is recommended.  
and temperature variations. Figure 1 shows a typical  
connection.  
1
2
3
6
7
8
16  
15  
14  
11  
10  
9
100pF BAT54S  
External  
Oscillator  
Reference  
A 1.5% temperature compensated bandgap reference is  
integrated in the EL7551. The external VREF capacitor acts  
as the dominant pole of the amplifier and can be increased  
in size to maximize transient noise rejection. A value of  
0.1µF is recommended.  
Oscillator  
EL7551  
The system clock is generated by an internal relaxation  
oscillator with a maximum duty-cycle of approximately 95%.  
Operating frequency can be adjusted through the COSC pin  
or can be driven by an external source. If the oscillator is  
driven by an external source care must be taken in selecting  
the ramp amplitude. Since CSLOPE value is derived from  
the COSC ramp, changes to COSC ramp will change the  
CSLOPE compensation ramp which determine the open-  
loop gain of the system.  
FIGURE 1. OSCILLATOR SYNCHRONIZATION  
Thermal Shut-down  
An internal temperature sensor continuously monitors die  
temperature. In the event that die temperature exceeds the  
thermal trip-point, the system is in fault state and will be shut  
down. The upper and low trip-points are set to 135°C and  
115°C respectively.  
When external synchronization is required, always choose  
C
such that the free-running frequency is at least 20%  
OSC  
lower than that of sync source to accommodate component  
Start-up Delay  
A capacitor can be added to the EN pin to delay the  
converter start-up (Figure 2) by utilizing the pull-up current.  
The delay time is approximately:  
t (ms) = 1200 × CF)  
d
1
2
3
6
7
8
16  
15  
14  
11  
10  
9
V
OUT  
V
V
IN  
O
t
d
C
TIME  
EL7551  
FIGURE 2. START-UP DELAY  
8
EL7551  
Layout Considerations  
The layout is very important for the converter to function  
properly. Power Ground (  
) and Signal Ground (  
)
should be separated to ensure that the high pulse current in  
the Power Ground never interferes with the sensitive signals  
connected to Signal Ground. They should only be connected  
at one point (normally at the negative side of either the input  
or output capacitor.)  
The trace connected to pin 14 (FB) is the most sensitive  
trace. It needs to be as short as possible and in a “quiet”  
place, preferably between PGND or SGND traces.  
In addition, the bypass capacitor connected to the VDD pin  
needs to be as close to the pin as possible.  
The heat of the chip is mainly dissipated through the PGND  
pins. Maximizing the copper area around these pins is  
preferable. In addition, a solid ground plane is always helpful  
for the EMI performance.  
The demo board is a good example of layout based on these  
principles. Please refer to the EL7551 Application Brief for  
the layout.  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
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