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产品型号EMX1DXV6T5的概述

芯片EMX1DXV6T5概述 EMX1DXV6T5是一款高性能的集成电路芯片,专为嵌入式系统设计,广泛应用于物联网设备、智能家居、消费电子等领域。它集成了多种功能于一身,使用方便,能够满足各种应用的需求。该芯片的设计理念是高效、灵活和低功耗,使其成为许多现代电子产品的理想选择。 芯片EMX1DXV6T5的详细参数 EMX1DXV6T5芯片的技术参数如下: - 处理器架构: ARM Cortex-M4 - 主频: 120 MHz - 内存: - SRAM: 64 KB - Flash: 512 KB - GPIO数量: 40 - 模拟功能: 内置12位ADC,有助于对模拟信号的高精度采集 - 通信接口: - UART: 3个 - SPI: 2个 - I2C: 2个 - CAN: 1个 - 工作电压: 1.8V - 3.6V - 功耗: 在待机模式下小于5 uA...

产品型号EMX1DXV6T5的Datasheet PDF文件预览

EMX1DXV6T1,  
EMX1DXV6T5  
Preferred Devices  
Dual NPN General Purpose  
Amplifier Transistor  
This NPN transistor is designed for general purpose amplifier  
applications. This device is housed in the SOT-563 package which is  
designed for low power surface mount applications, where board  
space is at a premium.  
http://onsemi.com  
DUAL NPN GENERAL  
PURPOSE AMPLIFIER  
TRANSISTORS  
Features  
Reduces Board Space  
High h , 210−460 (Typical)  
FE  
SURFACE MOUNT  
Low V  
, < 0.5 V  
CE(sat)  
These are Pb−Free Devices  
(6)  
(5)  
(4)  
MAXIMUM RATINGS (T = 25°C)  
A
Tr  
2
Rating  
Symbol  
Value  
Unit  
Collector-Base Voltage  
V
60  
Vdc  
(BR)CBO  
(BR)CEO  
(BR)EBO  
Tr  
1
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
50  
7.0  
100  
Vdc  
Vdc  
(1)  
(2)  
(3)  
Collector Current − Continuous  
I
mAdc  
C
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
6
Total Device Dissipation  
P
D
1
T = 25°C  
357 (Note 1)  
2.9 (Note 1)  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance −  
Junction-to-Ambient  
R
q
JA  
350 (Note 1)  
°C/W  
SOT−563  
CASE 463A  
STYLE 1  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
T = 25°C  
Derate above 25°C  
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
MARKING DIAGRAM  
Thermal Resistance −  
Junction-to-Ambient  
R
250 (Note 1)  
°C/W  
q
JA  
3X M G  
Junction and Storage  
Temperature Range  
T , T  
J stg  
55 to +150  
°C  
G
1
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
3X = Specific Device Code  
M
= Month Code  
1. FR−4 @ Minimum Pad  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 1  
EMX1DXV6T1/D  
 
EMX1DXV6T1, EMX1DXV6T5  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Collector-Base Breakdown Voltage  
V
60  
Vdc  
(BR)CBO  
(BR)CEO  
(BR)EBO  
(I = 50 mAdc, I = 0)  
C
E
Collector-Emitter Breakdown Voltage  
(I = 1.0 mAdc, I = 0)  
V
V
50  
7.0  
Vdc  
Vdc  
mA  
C
B
Emitter-Base Breakdown Voltage  
(I = 50 mAdc, I = 0)  
E
E
Collector-Base Cutoff Current  
(V = 60 Vdc, I = 0)  
I
0.5  
0.5  
CBO  
CB  
E
Emitter-Base Cutoff Current  
(V = 7.0 Vdc, I = 0)  
I
mA  
EBO  
EB  
B
Collector-Emitter Saturation Voltage (Note 2)  
(I = 50 mAdc, I = 5.0 mAdc)  
V
Vdc  
CE(sat)  
0.4  
C
B
DC Current Gain (Note 3)  
(V = 6.0 Vdc, I = 1.0 mAdc)  
h
FE  
120  
560  
CE  
C
Transition Frequency  
(V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz)  
f
180  
MHz  
pF  
T
CE  
C
Output Capacitance  
(V = 12 Vdc, I = 0 Adc, f = 1 MHz)  
C
OB  
2.0  
CB  
C
2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.  
3. Pulse Test: Pulse Width 300 ms, D.C. 2%.  
ORDERING INFORMATION  
Device  
Package  
SOT−563*  
SOT−563*  
SOT−563*  
SOT−563*  
Shipping  
EMX1DXV6T1  
EMX1DXV6T1G  
EMX1DXV6T5  
EMX1DXV6T5G  
4000 Units / Tape & Reel  
4000 Units / Tape & Reel  
8000 Units / Tape & Reel  
8000 Units / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*This package is inherently Pb−Free.  
http://onsemi.com  
2
EMX1DXV6T1, EMX1DXV6T5  
TYPICAL ELECTRICAL CHARACTERISTICS  
60  
50  
40  
30  
1000  
160 mA  
T
A
= 25°C  
V
= 10 V  
CE  
T
A
= 25°C  
T
= 75°C  
A
140 mA  
120 mA  
100 mA  
80 mA  
T
A
= 25°C  
100  
60 mA  
20  
10  
0
40 mA  
I
B
= 20 mA  
10  
0.1  
0
2
4
6
8
1
10  
100  
V
, COLLECTOR VOLTAGE (V)  
CE  
I , COLLECTOR CURRENT (mA)  
C
Figure 1. IC − VCE  
Figure 2. DC Current Gain  
2
1.5  
1
900  
T
A
= 25°C  
800  
700  
600  
500  
400  
300  
200  
100  
0
T
= 25°C  
= 5 V  
CE  
A
V
0.5  
0
0.01  
0.1  
1
10  
100  
0.2 0.5  
1
5
10 20  
40  
60 80 100 150 200  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Collector Saturation Region  
Figure 4. On Voltage  
20  
7
6
5
4
3
2
18  
16  
14  
12  
10  
1
0
0
1
2
3
4
10  
20  
(V)  
30  
40  
V
(V)  
V
EB  
CB  
Figure 5. Capacitance  
Figure 6. Capacitance  
http://onsemi.com  
3
EMX1DXV6T1, EMX1DXV6T5  
PACKAGE DIMENSIONS  
SOT−563, 6 LEAD  
CASE 463A−01  
ISSUE F  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE MATERIAL.  
A
−X−  
L
6
5
2
4
3
E
−Y−  
H
E
MILLIMETERS  
DIM MIN NOM MAX MIN  
INCHES  
NOM MAX  
1
A
b
C
D
E
e
0.50  
0.17  
0.08  
1.50  
1.10  
0.55  
0.22  
0.12  
1.60  
1.20  
0.5 BSC  
0.20  
1.60  
0.60 0.020 0.021 0.023  
0.27 0.007 0.009 0.011  
0.18 0.003 0.005 0.007  
1.70 0.059 0.062 0.066  
1.30 0.043 0.047 0.051  
0.02 BSC  
b 56 PL  
C
e
M
0.08 (0.003)  
X Y  
L
0.10  
1.50  
0.30 0.004 0.008 0.012  
1.70 0.059 0.062 0.066  
H
E
STYLE 1:  
PIN 1. EMITTER 1  
2. BASE 1  
3. COLLECTOR 2  
4. EMITTER 2  
5. BASE 2  
6. COLLECTOR 1  
SOLDERING FOOTPRINT*  
0.3  
0.0118  
0.45  
0.0177  
1.0  
0.0394  
1.35  
0.0531  
0.5  
0.5  
0.0197 0.0197  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
EMX1DXV6T1/D  
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