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产品型号FDB8860的概述

芯片FDB8860概述 FDB8860是一款功能强大的半导体器件，主要用于电源管理和驱动应用。它被广泛应用于DC-DC转换器、LED驱动器和各种电动机控制器中。该芯片以其高效的电能转换能力和出色的热管理性能，受到了多个行业的青睐。由此，FDB8860在消费电子、工业自动化和电动交通等领域得到了广泛的应用。该芯片采用了先进的CMOS技术，具有较低的功耗和高开关频率，使得其在进行高频开关操作时依然能保持稳定的工作性能。FDB8860的设计旨在满足现代电源管理系统对高集成度和高效率的迫切需求。芯片FDB8860的详细参数 FDB8860具有多项参数，具体如下： - 输入电压: 4.5V到20V - 输出电流: 峰值可达60A - 开关频率: 500 kHz - 效率: 高达95% - 过温保护: 内部过温保护功能 - 封装类型: 采用DFN-8封装，可以方便地与其他电路集成 - 控制方式...

产品型号FDB8860的Datasheet PDF文件预览

May 2008

FDB8860

N-Channel Logic Level PowerTrench MOSFET

30V, 80A, 2.6mΩ

Features

Applications

R_DS(ON)= 1.9mΩ (Typ), V_GS= 5V, I_D= 80A

12V Automotive Load Control

Q_g(5)= 89nC (Typ), V_GS= 5V

Low Miller Charge

Start / Alternator Systems

Electronic Power Steering Systems

ABS

Low Q_RRBody Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

DC-DC Converters

RoHS Compliant

www.fairchildsemi.com

FDB8860 Rev A1

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (V_GS= 10V, T_C< 163^oC)

Continuous (V_GS= 5V, T_C< 162^oC)

Continuous (V_GS= 10V, T_C= 25^oC, with R_θJA= 43^oC/W)

Pulsed

I_D

Figure 4

9 4 7

E_AS

S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 1 )

Power Dissipation

Derate above 25^oC

254

P_D

1.7

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to +175

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance Junction to Case

0.59

^oC/W

Thermal Resistance Junction to Ambient (Note 2)

Thermal Resistance Junction to Ambient TO-263,1in²copper pad area

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

800units

FDB8860

TO-263AB

330mm

24mm

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

I_D= 1mA, V_GS= 0V

V_DS= 24V

I_DSS

μA

V_GS= 0V

T_J= 150°C

250

±100

I_GSS

V_GS= ±20V

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_DS= V_GS, I_D= 250μA

I_D= 80A, V_GS= 10V

I_D= 80A, V_GS= 5V

I_D= 80A, V_GS= 4.5V

1.7

1.6

1.9

2.1

2.3

2.6

2.7

R_DS(ON)

Drain to Source On Resistance

mΩ

I_D= 80A, V_GS= 10V,

T_J= 175°C

2.5

3.6

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

R_G

Input Capacitance

9460 12585

V_DS= 15V, V_GS= 0V,

f = 1MHz

Output Capacitance

1710

1050

1.8

165

2275

Reverse Transfer Capacitance

Gate Resistance

1575

f = 1MHz

214

115

Q_g(TOT)

Q_g(5)

Q_g(TH)

Q_gs

Total Gate Charge at 10V

Total Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain “Miller” Charge

V_GS= 0V to 10V

V_GS= 0V to 5V

V_DD= 15V

_D= 80A

I_g= 1.0mA

V_GS= 0V to 1V

9.1

Q_gs2

Q_gd

FDB8860 Rev A1

www.fairchildsemi.com

Electrical Characteristics T_J= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Switching Characteristics

t_(on)

t_d(on)

t_r

Turn-On Time

213

340

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Turn-Off Time

_DD= 15V, I_D= 80A

_GS= 5V, R_GS= 1Ω

t_d(off)

t_f

t_off

192

Drain-Source Diode Characteristics

_SD= 80A

1.25

1.0

V_SD

Source to Drain Diode Voltage

I_SD= 40A

t_rr

Reverse Recovery Time

Reverse Recovery Charge

I_SD= 80A, dI_SD/dt = 100A/μs

Q_rr

Notes:

1: Starting T = 25 C, L =0.47mH, I = 64A , V = 30V, V = 10V.

2: Pulse width = 100s

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

FDB8860 Rev A1

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

1.2

1.0

0.8

0.6

0.4

0.2

0.0

300

225

150

V_GS= 10V

CURRENT LIMITED

BY PACKAGE

V_GS= 5V

100

125

150

175

100

125

150

175

T_C, CASE TEMPERATURE(^oC)

T_C, CASE TEMPERATURE (^oC)

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

PEAK T = P

x Z

x R

+ T

θJC

θJC C

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t, RECTANGULAR PULSE DURATION (s)

Figure 3. Normalized Maximum Transient Thermal Impedance

3000

= 25 C

FOR TEMPERATURES

ABOVE 25 C DERATE PEAK

1000

CURRENT AS FOLLOWS:

175 - T

150

I = I

100

SINGLE PULSE

10^-5

10^-4

10^-3

10^-2

t, PULSE WIDTH (s)

10^-1

10⁰

10¹

Figure 4. Peak Current Capability

FDB8860 Rev A1

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

1000

100

500

100

If R = 0

= (L)(I )/(1.3*RATED BV

10us

- V

)

DSS

If R

≠ 0

= (L/R)ln[(I *R)/(1.3*RATED BV

- V ) +1]

DSS DD

100us

STARTING T = 25 C

CURRENT LIMITED

BY PACKAGE

1ms

10ms

OPERATION IN THIS

AREA MAY BE

STARTING T = 150 C

SINGLE PULSE

T_J= MAX RATED

T_C= 25^oC

100ms

LIMITED BY R_DS(ON)

0.1

100

1000

10000

t_AV, TIME IN AVALANCHE (ms)

V_DS, DRAIN TO SOURCE VOLTAGE(V)

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

Figure 5. Forward Bias Safe Operating Area

160

120

V_GS= 4V

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

V_GS= 3V

100

V_DD= 5V

120

V_GS= 5V

V_GS= 10V

T_J= 175^oC

T_J= 25^oC

T_J= -55^oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.2

0.4

0.6

0.8

1.0

V_GS, GATE TO SOURCE VOLTAGE (V)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics

Figure 8. Saturation Characteristics

4.0

1.6

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80μs

DUTY CYCLE=0.5% MAX

I_D= 40A

3.5

3.0

2.5

2.0

1.5

1.4

1.2

1.0

0.8

0.6

T_J= 175^oC

T_J= 25^oC

ID = 80A

VGS = 10V

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE( ^OC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 9. Drain to Source On-Resistance

Variation vs Gate to Source Voltage

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

FDB8860 Rev A1

www.fairchildsemi.com

Typical Characteristics T_J= 25°C unless otherwise noted

1.10

1.4

1.2

1.0

0.8

0.6

0.4

0.2

I_D= 1mA

V_GS= V_DS

I_D= 250μA

1.05

1.00

0.95

0.90

-80

-40

120

160

200

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE(^oC)

T_J, JUNCTION TEMPERATURE( C)

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

20000

10000

V_DD= 15V

C_iss

C_oss

C_rss

f = 1MHz

1000

I_D= 80A

_GS= 0V

I_D= 1A

500

0.1

20 40 60 80 100 120 140 160 180

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 13. Capacitance vs Drain to Source

Voltage

Figure 14. Gate Charge vs Gate to Source Voltage

FDB8860 Rev A1

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global

subsidianries, and is not intended to be an exhaustive list of all such trademarks.

ACEx^®

FPS™

PDP-SPM™

The Power Franchise^®

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK^®

EfficentMax™

F-PFS™

Power-SPM™

PowerTrench^®

Programmable Active Droop™

QFET^®

QS™

Quiet Series™

RapidConfigure™

FRFET^®

Global Power Resource^SM

Green FPS™

Green FPS™ e-Series™

GTO™

TinyBoost™

TinyBuck™

TinyLogic^®

TINYOPTO™

TinyPower™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

Saving our world 1mW at a time™ TinyPWM™

EZSWITCH™ *

SmartMax™

SMART START™

SPM^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SuperMOS™

TinyWire™

µSerDes™

™

MicroPak™

Fairchild^®

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC^®

UHC^®

Ultra FRFET™

UniFET™

VCX™

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

FAST^®

OPTOPLANAR^®

VisualMax™

FastvCore™

FlashWriter^®

* EZSWITCH™ and FlashWriter^®are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER

ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body or (b)

support or sustain life, and (c) whose failure to perform when

properly used in accordance with instructions for use provided

in the labeling, can be reasonably expected to result in a

significant injury of the user.

2. A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Advance Information

Formative or In Design

This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

Preliminary

First Production

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

This datasheet contains specifications on a product that is discontinued by

Fairchild Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I34

FDB8860 Rev A1

www.fairchildsemi.com

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FDB8860产品参数

型号:	FDB8860
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	D2PAK
包装说明：	ROHS COMPLIANT PACKAGE-3
针数：	3
Reach Compliance Code：	unknown
风险等级：	5.23
雪崩能效等级（Eas）：	947 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	31 A
最大漏源导通电阻：	0.0027 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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