FDD86110各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号FDD86110的概述

芯片FDD86110的概述 FDD86110是一款专为通信及信号处理应用设计的集成电路。此芯片以其高性能、低功耗和优秀的线性特性，广泛应用于各种无线通信系统中，特别是在基站、无线局域网（WLAN）和其他需要高频信号调制的场合。该设备的设计旨在适应现代通信技术的不断发展，提供可靠的信号传输和处理功能。 FDD86110的核心优势在于其出色的增益平坦度和宽频带特性，使其特别适用于高频信号的放大和调制。这使得FDD86110能够在不同的工作条件下维持良好的性能，满足各类高频应用的需求。 FDD86110的详细参数 FDD86110是一款集成度很高的芯片，具有多种电气特性。以下是部分关键参数： 1. 频率范围：FDD86110的工作频率范围在1.8 GHz到2.7 GHz之间，适合于多种无线通信标准。 2. 增益：芯片具有高达30 dB的增益，确保信号在经过处理后不会显著衰减。 3. 功耗：在...

产品型号FDD86110的Datasheet PDF文件预览

October 2011

FDD86110

N-Channel PowerTrench^®MOSFET

100 V, 50 A, 10.2 mΩ

Features

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench^®process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Max r_DS(on)= 10.2 mΩ at V_GS= 10 V, I_D= 12.5 A

Max r_DS(on)= 16 mΩ at V_GS= 6 V, I_D= 9.8 A

100% UIL tested

RoHS Compliant

Application

DC - DC Conversion

D-PAK

TO -252

(TO-252)

MOSFET Maximum Ratings T_C= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

12.5

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

135

T_C= 25 °C

T_A= 25 °C

127

P_D

Power Dissipation

(Note 1a)

3.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

0.98

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDD86110

D-PAK(TO-252)

2500 units

FDD86110 Rev.C

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA, V_GS= 0 V

100

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

_D= 250 μA, referenced to 25 °C

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 80 V, V_GS= 0 V

V_GS= ±20 V, V_DS= 0 V

μA

±100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

2.8

-10

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= 250 μA, referenced to 25 °C

_GS= 10 V, I_D= 12.5 A

mV/°C

8.5

11.3

10.2

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 6 V, I_D= 9.8 A

mΩ

V_GS= 10 V, I_D= 12.5 A,T_J= 125°C

V_DS= 10 V, I_D= 12.5 A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

1702

379

2265

505

V_DS= 50 V, V_GS= 0 V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.5

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

5.4

V_DD= 50 V, I_D= 12.5 A,

_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

3.9

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_DD= 50 V,

_D= 12.5 A

Q_gs

Q_gd

7.1

5.2

Drain-Source Diode Characteristics

_GS= 0 V, I_S= 12.5 A

(Note 2)

0.80

0.72

1.3

1.2

V_SD

Source-Drain Diode Forward Voltage

V_GS= 0 V, I_S= 2.6 A

t_rr

Reverse Recovery Time

I_F= 12.5 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

Notes:

1: R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

θJA

θJC

is guaranteed by design while R

is determined by the user’s board design.

θJA

40 °C/W when mounted on a

1 in pad of 2 oz copper

b) 96 °C/W when mounted on

a minimum pad

2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.

3: Starting T = 25 °C, L = 0.3 mH, I = 30 A, V = 90 V, V = 10 V.

FDD86110 Rev.C

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

V_GS= 6 V

V_GS= 4.5 V

V_GS= 5.5 V

V_GS= 5 V

V_GS= 5.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 10 V

V_GS= 5 V

V_GS= 6 V

V_GS= 10 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 4.5 V

I_D, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

2.0

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

I_D= 12.5 A

_GS= 10 V

I_D= 12.5 A

1.8

1.6

1.4

1.2

1.0

0.8

0.6

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

100

V_GS= 0 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

T_J= 150 ^o

V_DS= 5 V

T_J= 25 ^oC

T_J= 150 ^o

0.1

T_J= 25 ^o

T_J= -55 ^o

0.01

0.001

T_J= -55 ^o

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_SD, BODY DIODE FORWARD VOLTAGE (V)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDD86110 Rev.C

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

5000

1000

I_D= 12.5 A

V_DD= 50 V

C_iss

V_DD= 25 V

V_DD= 75 V

C_oss

100

f = 1 MHz

= 0 V

C_rss

0.1

100

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

100

T_J= 25 ^oC

T_J= 100 ^oC

V_GS= 10 V

Limited by Package

V_GS= 6 V

T_J= 125 ^o

_θJC= 0.98 ^oC/W

0.001

100

125

150

0.1

100

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure 10. Maximum Continous Drain Current

vs. Case Temperature

10000

SINGLE PULSE

R_θJC= 0.98 ^oC/W

_C= 25 ^oC

100 μs

1000

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

T_J= MAX RATED

1 ms

R_θJC= 0.98 ^oC/W

100

10 ms

_C= 25 ^oC

0.5

0.1

10^-5

10^-4

10^-3

t, PULSE WIDTH (sec)

10^-2

10^-1

100

400

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure 12. Single Pulse Maximum

Power Dissipation

FDD86110 Rev.C

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

SINGLE PULSE

_θJC= 0.98 ^oC/W

NOTES:

DUTY FACTOR: D = t /t

PEAK T = P

x Z

x R

+ T

θJC

θJC C

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Junction-to-Case Transient Thermal Response Curve

FDD86110 Rev.C

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

2Cool™

FPS™

PDP SPM™

Power-SPM™

PowerTrench

PowerXS™

The Power Franchise

AccuPower™

Auto-SPM™

AX-CAP™*

F-PFS™

FRFET

Global Power Resource

Green FPS™

TinyBoost™

TinyBuck™

TinyCalc™

BitSiC

Programmable Active Droop™

Build it Now™

CorePLUS™

Green FPS™ e-Series™

Gmax™

QFET

QS™

TinyLogic

CorePOWER™

CROSSVOLT™

CTL™

GTO™

IntelliMAX™

ISOPLANAR™

Marking Small Speakers Sound Louder

and Better™

Quiet Series™

RapidConfigure™

™

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

Current Transfer Logic™

DEUXPEED

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

TranSiC

Dual Cool™

EcoSPARK

EfficentMax™

ESBC™

MegaBuck™

MICROCOUPLER™

MicroFET™

TriFault Detect™

TRUECURRENT *

SMART START™

μSerDes™

MicroPak™

Solutions for Your Success™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

mWSaver™

SPM

STEALTH™

UHC

SuperFET

Fairchild

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

Fairchild Semiconductor

FACT Quiet Series™

OptoHiT™

OPTOLOGIC

FACT

FAST

SupreMOS

OPTOPLANAR

SyncFET™

Sync-Lock™

®*

FastvCore™

FETBench™

FlashWriter

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I58

www.fairchildsemi.com

FDD86110 Rev.C

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FDD86110产品参数

型号:	FDD86110
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	DPAK
包装说明：	ROHS COMPLIANT, DPAK-3
针数：	3
制造商包装代码：	TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA &AB
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	4.45
雪崩能效等级（Eas）：	135 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (Abs) (ID)：	50 A
最大漏极电流 (ID)：	12.5 A
最大漏源导通电阻：	0.0102 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	127 W
最大脉冲漏极电流 (IDM)：	60 A
子类别：	FET General Purpose Powers
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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