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产品型号FM24C16B-GTR的概述

芯片FM24C16B-GTR的概述 FM24C16B-GTR是一款高性能的非易失性存储器，属于FM系列的专用存储产品。该芯片利用了Ferroelectric RAM（FRAM）技术，这种技术结合了快速的随机写入能力和高耐磨性，适用于广泛的应用场合。FM24C16B-GTR在存储数据时，即使在断电的情况下也能保持其内容，因而非常适合需要持久存储数据的场景。该器件在工业、消费电子以及自动化等领域得到了广泛应用。芯片FM24C16B-GTR的详细参数 FM24C16B-GTR的规格参数主要包括以下几个方面： - 存储容量：16Kb (2048 x 8-bit) - 工作电压：2.0V至3.6V - 最大编程时间：10ms - 写入循环次数：高达10亿次 - 保持时间：超过10年 - 接口类型：I²C接口 - 速度：最高400kHz的I²C双向通信速率 - 封装类型：SOIC-8和DFN-8...

产品型号FM24C16B-GTR的Datasheet PDF文件预览

Preliminary

FM24C16B

16Kb Serial 5V F-RAM Memory

Features

Low Power Operation

16K bit Ferroelectric Nonvolatile RAM



5V operation

100 A Active Current (100 kHz)

4 A (typ.) Standby Current



Organized as 2,048 x 8 bits

High Endurance (10¹²) Read/Write Cycles

38 year Data Retention

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Industry Standard Configuration



Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC (-G)

Fast Two-wire Serial Interface



Up to 1MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Description

Pin Configuration

The FM24C16B is a 16-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or FRAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 38 years

while eliminating the complexities, overhead, and

system level reliability problems caused by EEPROM

and other nonvolatile memories.

VDD

SCL

SDA

VSS

The FM24C16B performs write operations at bus

speed. No write delays are incurred. Data is written to

the memory array in the cycle after it has been

successfully transferred to the device. The next bus

cycle may commence immediately without the need

for data polling. The FM24C16B is capable of

supporting 10¹²read/write cycles, or a million times

more write cycles than EEPROM.

Pin Names

SDA

SCL

VSS

Function

Serial Data/Address

Serial Clock

Write Protect

Ground

Supply Voltage

These capabilities make the FM24C16B ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows the system to write

data more frequently, with less system overhead.

VDD

Ordering Information

FM24C16B-G

FM24C16B-GTR

“Green”/RoHS 8-pin SOIC

“Green”/RoHS 8-pin SOIC,

Tape & Reel

The FM24C16B provides substantial benefits to users

of serial EEPROM, and these benefits are available as

a hardware drop-in replacement. The FM24C16B is

available in an industry standard 8-pin SOIC package

and uses

familiar two-wire protocol. The

specifications are guaranteed over the industrial

temperature range from -40°C to +85°C.

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

www.ramtron.com

Rev. 1.3

July 2011

Page 1 of 12

FM24C16B - 16Kb 5V I2C F-RAM

Address

Latch

256 x 64

FRAM Array

Counter

SDA

Serial to Parallel

Converter

Data Latch

SCL

Control Logic

Figure 1. Block Diagram

Pin Description

Pin Name

Type

Pin Description

SDA

I/O

Serial Data Address: This is a bi-directional data pin for the two-wire interface. It

employs an open-drain output and is intended to be wire-OR‟d with other devices on the

two-wire bus. The input buffer incorporates a Schmitt trigger for noise immunity and the

output driver includes slope control for falling edges. A pull-up resistor is required.

Serial Clock: The serial clock input for the two-wire interface. Data is clocked-out on

the falling edge and clocked-in on the rising edge.

SCL

Input

Write Protect: When WP is high, the entire array is write-protected. When WP is low,

all addresses may be written. This pin is internally pulled down.

VDD

VSS

Supply Supply Voltage (5V)

Supply Ground

No connect

Rev. 1.3

July 2011

Page 2 of 12

FM24C16B - 16Kb 5V I2C F-RAM

Overview

Two-wire Interface

The FM24C16B is a serial FRAM memory. The

memory array is logically organized as a 2,048 x 8

memory array and is accessed using an industry

standard two-wire interface. Functional operation of

the FRAM is similar to serial EEPROMs. The major

difference between the FM24C16B and a serial

EEPROM with the same pinout relates to its superior

write performance.

The FM24C16B employs a bi-directional two-wire

bus protocol using few pins and little board space.

Figure 2 illustrates a typical system configuration

using the FM24C16B in a microcontroller-based

system. The industry standard two-wire bus is

familiar to many users but is described in this section.

By convention, any device that is sending data onto

the bus is the transmitter while the target device for

this data is the receiver. The device that is controlling

the bus is the master. The master is responsible for

generating the clock signal for all operations. Any

device on the bus that is being controlled is a slave.

The FM24C16B is always a slave device.

Memory Architecture

When accessing the FM24C16B, the user addresses

2,048 locations each with 8 data bits. These data bits

are shifted serially. The 2,048 addresses are accessed

using the two-wire protocol, which includes a slave

address (to distinguish from other non-memory

devices), a row address, and a segment address. The

row address consists of 8-bits that specify one of 256

rows. The 3-bit segment address specifies one of 8

segments within each row. The complete 11-bit

address specifies each byte uniquely.

The bus protocol is controlled by transition states in

the SDA and SCL signals. There are four conditions

including Start, Stop, Data bit, and Acknowledge.

Figure 3 illustrates the signal conditions that define

the four states. Detailed timing diagrams are shown in

the Electrical Specifications section.

Most functions of the FM24C16B either are

controlled by the two-wire interface or handled

automatically by on-board circuitry. The memory is

read or written at the speed of the two-wire bus.

Unlike an EEPROM, it is not necessary to poll the

device for a ready condition since writes occur at bus

speed. That is, by the time a new bus transaction can

be shifted into the part, a write operation is complete.

This is explained in more detail in the interface

section below.

VDD

Rmin = 1.8 Kohm

Rmax = tR/Cbus

Microcontroller

SDA SCL

FM24C16B

SDA SCL

Other Slave Device

Note that the FM24C16B contains no power

management circuits other than a simple internal

power-on reset. It is the user‟s responsibility to ensure

that VDD is within data sheet tolerances to prevent

incorrect operation.

Figure 2. Typical System Configuration

Rev. 1.3

July 2011

Page 3 of 12

FM24C16B - 16Kb 5V I2C F-RAM

SCL

SDA

Stop

Start

Data bits

(Transmitter)

Data bit Acknowledge

(Transmitter) (Receiver)

(Master) (Master)

Figure 3. Data Transfer Protocol

The receiver would fail to acknowledge for two

distinct reasons. First is that a byte transfer fails. In

this case, the No-Acknowledge ends the current

operation so that the part can be addressed again.

This allows the last byte to be recovered in the event

of a communication error.

Stop Condition

A stop condition is indicated when the bus master

drives SDA from low to high while the SCL signal is

high. All operations using the FM24C16B must end

with a Stop condition. If an operation is pending

when a Stop is asserted, the operation will be aborted.

The master must have control of SDA (not a memory

read) in order to assert a Stop condition.

Second and most common, the receiver does not

acknowledge to deliberately end an operation. For

example, during a read operation, the FM24C16B

will continue to place data onto the bus as long as the

receiver sends Acknowledges (and clocks). When a

read operation is complete and no more data is

needed, the receiver must not acknowledge the last

byte. If the receiver acknowledges the last byte, this

will cause the FM24C16B to attempt to drive the bus

on the next clock while the master is sending a new

command such as a Stop.

Start Condition

A Start condition is indicated when the bus master

drives SDA from high to low while the SCL signal is

high. All read and write transactions begin with a

Start condition. An operation in progress can be

aborted by asserting a Start condition at any time.

Aborting an operation using the Start condition will

prepare the FM24C16B for a new operation.

If during operation the power supply drops below the

specified VDD minimum, the system should issue a

Start condition prior to performing another operation.

Slave Address

The first byte that the FM24C16B expects after a

Start condition is the slave address. As shown in

Figure 4, the slave address contains the device type,

the page of memory to be accessed, and a bit that

specifies if the transaction is a read or a write.

Data/Address Transfer

All data transfers (including addresses) take place

while the SCL signal is high. Except under the two

conditions described above, the SDA signal should

not change while SCL is high. For system design

considerations, keeping SCL in a low state while idle

improves robustness.

Bits 7-4 are the device type and should be set to

1010b for the FM24C16B. The device type allows

other types of functions to reside on the 2-wire bus

within an identical address range. Bits 3-1 are the

page select. They specify the 256-byte block of

memory that is targeted for the current operation. Bit

0 is the read/write bit. A 0 indicates a write operation.

Acknowledge

The Acknowledge takes place after the 8^thdata bit has

been transferred in any transaction. During this state,

the transmitter should release the SDA bus to allow

the receiver to drive it. The receiver drives the SDA

signal low to acknowledge receipt of the byte. If the

receiver does not drive SDA low, the condition is a

No-Acknowledge and the operation is aborted.

Rev. 1.3

July 2011

Page 4 of 12

FM24C16B - 16Kb 5V I2C F-RAM

Page

Select

Memory Operation

Slave ID

The FM24C16B is designed to operate in a manner

very similar to other 2-wire interface memory

products. The major differences result from the

higher performance write capability of FRAM

technology. These improvements result in some

differences between the FM24C16B and a similar

configuration EEPROM during writes. The complete

operation for both writes and reads is explained

below.

R/W

Figure 4. Slave Address

Word Address

Write Operation

After the FM24C16B (as receiver) acknowledges the

slave ID, the master will place the word address on

the bus for a write operation. The word address is the

lower 8-bits of the address to be combined with the 3-

bits of the page select to specify the exact byte to be

written. The complete 11-bit address is latched

internally.

All writes begin with a slave ID then a word address

as previously mentioned. The bus master indicates a

write operation by setting the LSB of the Slave

Address to a 0. After addressing, the bus master sends

each byte of data to the memory and the memory

generates an acknowledge condition. Any number of

sequential bytes may be written. If the end of the

address range is reached internally, the address

counter will wrap from 7FFh to 000h.

No word address occurs for a read operation, though

the 3-bit page select is latched internally. Reads

always use the lower 8-bits that are held internally in

the address latch. That is, reads always begin at the

address following the previous access. A random read

address can be loaded by doing a write operation as

explained below.

Unlike other nonvolatile memory technologies, there

is no write delay with FRAM. The entire memory

cycle occurs in less time than a single bus clock.

Therefore, any operation including read or write can

occur immediately following a write. Acknowledge

After transmission of each data byte, just prior to the

acknowledge, the FM24C16B increments the internal

address latch. This allows the next sequential byte to

be accessed with no additional addressing. After the

last address (7FFh) is reached, the address latch will

roll over to 000h. There is no limit on the number of

bytes that can be accessed with a single read or write

operation.

polling,

a technique used with EEPROMs to

determine if a write is complete is unnecessary and

will always return a „ready‟ condition.

An actual memory array write occurs after the 8^thdata

bit is transferred. It will be complete before the

acknowledge is sent. Therefore, if the user desires to

abort a write without altering the memory contents,

this should be done using start or stop condition prior

to the 8^thdata bit. The FM24C16B needs no page

buffering.

Data Transfer

After all address information has been transmitted,

data transfer between the bus master and the

FM24C16B can begin. For a read operation the

device will place 8 data bits on the bus then wait for

an acknowledge. If the acknowledge occurs, the next

sequential byte will be transferred. If the

acknowledge is not sent, the read operation is

concluded. For a write operation, the FM24C16B will

accept 8 data bits from the master then send an

acknowledge. All data transfer occurs MSB (most

significant bit) first.

The memory array can be write protected using the

WP pin. Setting the WP pin to a high condition

(VDD) will write-protect all addresses. The

FM24C16B will not acknowledge data bytes that are

written to protected addresses. In addition, the

address counter will not increment if writes are

attempted to these addresses. Setting WP to a low

state (VSS) will deactivate this feature.

Figure 5 and 6 below illustrate both a single-byte and

multiple-byte write cases.

Rev. 1.3

July 2011

Page 5 of 12

FM24C16B - 16Kb 5V I2C F-RAM

Start

Address & Data

Word Address

Stop

By Master

Slave Address

Data Byte

By FM24C16B

Acknowledge

Figure 5. Single Byte Write

Start

Address & Data

Stop

By Master

Slave Address

Word Address

Data Byte

By FM24C16B

Acknowledge

Figure 6. Multiple Byte Write

attempts to read out additional data onto the bus. The

four valid methods are as follows.

Read Operation

There are two types of read operations. They are

current address read and selective address read. In a

current address read, the FM24C16B uses the internal

address latch to supply the lower 8 address bits. In a

selective read, the user performs a procedure to set

these lower address bits to a specific value.

1. The bus master issues a no-acknowledge in the

9^thclock cycle and a stop in the 10^thclock cycle.

This is illustrated in the diagrams below. This is

the preferred method.

2. The bus master issues a no-acknowledge in the

9^thclock cycle and a start in the 10^th.

3. The bus master issues a stop in the 9^thclock

cycle. Bus contention may result.

Current Address & Sequential Read

As mentioned above the FM24C16B uses an internal

latch to supply the lower 8 address bits for a read

operation. A current address read uses the existing

value in the address latch as a starting place for the

read operation. This is the address immediately

following that of the last operation.

4. The bus master issues a start in the 9^thclock

cycle. Bus contention may result.

If the internal address reaches 7FFh it will wrap

around to 000h on the next read cycle. Figures 7 and

8 show the proper operation for current address reads.

To perform a current address read, the bus master

supplies a slave address with the LSB set to 1. This

indicates that a read operation is requested. The 3

page select bits in the slave ID specify the block of

memory that is used for the read operation. On the

next clock, the FM24C16B will begin shifting out

data from the current address. The current address is

the 3 bits from the slave ID combined with the 8 bits

that were in the internal address latch.

Selective (Random) Read

A simple technique allows a user to select a random

address location as the starting point for a read

operation. It uses the first two bytes of a write

operation to set the internal address byte followed by

subsequent read operations.

To perform a selective read, the bus master sends out

the slave address with the LSB set to 0. This specifies

a write operation. According to the write protocol, the

bus master then sends the word address byte that is

loaded into the internal address latch. After the

FM24C16B acknowledges the word address, the bus

master issues a start condition. This simultaneously

aborts the write operation and allows the read

command to be issued with the slave address set to 1.

The operation is now a current address read. This

operation is illustrated in Figure 9.

Beginning with the current address, the bus master

can read any number of bytes. Thus, a sequential read

is simply a current address read with multiple byte

transfers. After each byte, the internal address counter

will be incremented. Each time the bus master

acknowledges

byte this indicates that the

FM24C16B should read out the next sequential byte.

There are four ways to properly terminate a read

operation. Failing to properly terminate the read will

most likely create a bus contention as the FM24C16B

Rev. 1.3

July 2011

Page 6 of 12

Ramtron

FM24C16B - 16Kb 5V I2C F-RAM

Start

Address

Acknowledge

By Master

Stop

Slave Address

Data Byte

Data

By FM24C16B

Acknowledge

Figure 7. Current Address Read

Acknowledge

Start

Address

Acknowledge

By Master

Stop

Slave Address

Data Byte

1 P

By FM24C16B

Acknowledge

Data

Figure 8. Sequential Read

Acknowledge

Address

Start

Address

Acknowledge

By Master

Stop

Slave Address

Word Address

Slave Address

Data Byte

1 P

By FM24C16B

Acknowledge

Data

Figure 9. Selective (Random) Read

the beginning of a new row. Endurance can be

optimized by ensuring frequently accessed data is

located in different rows. Regardless, FRAM read

and write endurance is effectively unlimited at the

1MHz two-wire speed. Even at 3000 accesses per

second to the same row, 10 years time will elapse

before 1 trillion endurance cycles occur.

Endurance

The FM24C16B internally operates with a read and

restore mechanism. Therefore, endurance cycles are

applied for each read or write cycle. The memory

architecture is based on an array of rows and

columns. Each read or write access causes an

endurance cycle for an entire row. In the FM24C16B,

a row is 64 bits wide. Every 8-byte boundary marks

19 July 2011

7/12

FM24C16B - 16Kb 5V I2C F-RAM

Electrical Specifications

Absolute Maximum Ratings

Symbol

Description

Ratings

-1.0V to +7.0V

and V_IN< V_DD+1.0V *

-55C to +125C

260 C

V_DD

V_IN

Power Supply Voltage with respect to V_SS

Voltage on any signal pin with respect to V_SS

T_STG

T_LEAD

V_ESD

Storage Temperature

Lead Temperature (Soldering, 10 seconds)

Electrostatic Discharge Voltage

- Human Body Model (AEC-Q100-002 Rev. E)

- Charged Device Model (AEC-Q100-011 Rev. B)

- Machine Model (AEC-Q100-003 Rev. E)

Package Moisture Sensitivity Level

4kV

1.25kV

100V

MSL-1

* Exception: The “V_IN< V_DD+1.0V” restriction does not apply to the SCL and SDA inputs.

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating

only, and the functional operation of the device at these or any other conditions above those listed in the operational section of

this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device

reliability.

DC Operating Conditions (T_A= -40 C to + 85 C, V_DD= 4.5V to 5.5V unless otherwise specified)

Symbol

V_DD

Parameter

Main Power Supply

Min

4.5

Typ

5.0

Max

5.5

Units

Notes

I_DD

VDD Supply Current

@ SCL = 100 kHz

@ SCL = 400 kHz

@ SCL = 1 MHz

100

200

400

A

I_SB

I_LI

I_LO

V_IL

V_IH

V_OL

Standby Current

±1

Input Leakage Current

Output Leakage Current

Input Low Voltage

Input High Voltage

Output Low Voltage

@ I_OL= 3 mA

-0.3

0.7 V_DD

0.3 V_DD

V_DD+ 0.3

0.4

R_IN

Input Resistance (WP pin)

For V_IN= V_IL(max)

For V_IN= V_IH(min)

K

M

V_HYS

Input Hysteresis

0.05 V_DD

Notes

1. SCL toggling between V_DD-0.3V and V_SS, other inputs V_SSor V_DD-0.3V.

2. SCL = SDA = V_DD. All inputs V_SSor V_DD. Stop command issued.

3. V_INor V_OUT= V_SSto V_DD. Does not apply to WP pin.

4. This parameter is characterized but not tested.

5. The input pull-down circuit is strong (40K) when the input voltage is below V_ILand much weaker (1M)

when the input voltage is above V_IH.

Rev. 1.3

July 2011

Page 8 of 12

FM24C16B - 16Kb 5V I2C F-RAM

AC Parameters (T_A= -40 C to + 85 C, V_DD= 4.5V to 5.5V unless otherwise specified)

Symbol Parameter Min Max Min Max Min Max Units Notes

f_SCL

t_LOW

t_HIGH

t_AA

SCL Clock Frequency

Clock Low Period

Clock High Period

SCL Low to SDA Data Out Valid

4.7

4.0

100

1.3

0.6

400

0.6

0.4

1000

kHz

s

0.9

0.55

s

t_BUF

t_HD:STA

t_SU:STA

Bus Free Before New Transmission

Start Condition Hold Time

Start Condition Setup for Repeated

Start

4.7

4.0

4.7

1.3

0.6

0.5

0.25

s

t_HD:DAT

t_SU:DAT

t_R

t_F

t_SU:STO

t_DH

Data In Hold Time

Data In Setup Time

Input Rise Time

Input Fall Time

Stop Condition Setup

250

100

s

1000

300

100

4.0

0.6

0.25

Data Output Hold

(from SCL @ V_IL)

t_SP

Noise Suppression Time Constant

on SCL, SDA

Notes : All SCL specifications as well as start and stop conditions apply to both read and write operations.

The speed-related specifications are guaranteed characteristic points from DC to 1 MHz.

This parameter is periodically sampled and not 100% tested.

Capacitance (T_A= 25 C, f=1.0 MHz, V_DD= 5V)

Symbol

C_I/O

C_IN

Parameter

Input/Output Capacitance (SDA)

Input Capacitance

Max

Units

Notes

This parameter is periodically sampled and not 100% tested.

Power Cycle Timing

V_DDmin.

V_DD

t_VR

t_VF

t_PD

t_PU

SDA,SCL

Power Cycle Timing (T_A= -40C to +85C, V_DD= 4.5V to 5.5V unless otherwise specified)

Symbol Parameter

Min

Max

Units

Notes

t_PU

t_PD

t_VR

Power Up (V_DDmin) to First Access (Start condition)

Last Access (Stop condition) to Power Down (V_DDmin)

V_DDRise Time

V_DDFall Time

100

s

s/V

t_VF

Notes

1. Slope measured at any point on V_DDwaveform.

Rev. 1.3

July 2011

Page 9 of 12

FM24C16B - 16Kb 5V I2C F-RAM

Equivalent AC Load Circuit

5.5V

AC Test Conditions

Input Pulse Levels

Input rise and fall times

Input and output timing levels

0.1 V_DDto 0.9 V_DD

10 ns

0.5 V_DD

1700



Diagram Notes

Output

All start and stop timing parameters apply to both read and write cycles.

Clock specifications are identical for read and write cycles. Write timing

parameters apply to slave address, word address, and write data bits.

Functional relationships are illustrated in the relevant data sheet sections.

These diagrams illustrate the timing parameters only.

100 pF

Read Bus Timing

t_HIGH

t_R

t_SP

t_F

t_SP

t_LOW

SCL

1/fSCL

t_SU:SDA

t_HD:DAT

t_SU:DAT

t_BUF

SDA

t_DH

t_AA

Stop Start

Acknowledge

Start

Write Bus Timing

t_HD:DAT

SCL

t_SU:DAT

t_AA

t_HD:STA

t_SU:STO

SDA

Stop Start

Acknowledge

Start

Data Retention

Symbol

T_DR

Parameter

@ +85ºC

@ +80ºC

@ +75ºC

Min

Max

Units

Years

Notes

Rev. 1.3

July 2011

Page 10 of 12

FM24C16B - 16Kb 5V I2C F-RAM

Mechanical Drawing

8-pin SOIC (JEDEC Standard MS-012 variation AA)

Recommended PCB Footprint

7.70

3.70

3.90 ±0.10 6.00 ±0.20

2.00

1.27

0.65

Pin 1

0.25

0.50

4.90 ±0.10

1.35

1.75

0.19

0.25

0.10 mm

1.27

0.10

0.25

0 - 8

0.40

1.27

0.33

0.51

Refer to JEDEC MS-012 for complete dimensions and notes.

All dimensions in millimeters.

SOIC Package Marking Scheme

Legend:

XXXXXX= part number, P= package type

R=rev code, LLLLLLL= lot code

RIC=Ramtron Int‟l Corp, YY=year, WW=work week

XXXXXXX-P

RLLLLLLL

RICYYWW

Example: FM24C16B, “Green” SOIC package, Year 2010, Work Week 49

FM24C16B-G

A00002G1

RIC1049

Rev. 1.3

July 2011

Page 11 of 12

FM24C16B - 16Kb 5V I2C F-RAM

Revision History

Revision

1.0

Date

Summary

Initial Release

Changed V_IH(max) to V_DD+0.3V.

Changed t_PUand t_VFspec limits.

Added ESD ratings.

11/10/2010

12/20/2010

2/15/2011

7/19/2011

1.1

1.2

1.3

Rev. 1.3

July 2011

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FM24C16B-GTR产品参数

型号:	FM24C16B-GTR
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	RAMTRON INTERNATIONAL CORP
零件包装代码：	SOIC
包装说明：	SOP, SOP8,.25
针数：	8
Reach Compliance Code：	unknown
HTS代码：	8542.32.00.71
风险等级：	5.56
Is Samacsys：	N
JESD-30 代码：	R-PDSO-G8
长度：	4.9 mm
内存密度：	16384 bit
内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	8
功能数量：	1
端子数量：	8
字数：	2048 words
字数代码：	2000
工作模式：	SYNCHRONOUS
最高工作温度：	85 °C
最低工作温度：	-40 °C
组织：	2KX8
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装等效代码：	SOP8,.25
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
电源：	5 V
认证状态：	Not Qualified
座面最大高度：	1.75 mm
最大待机电流：	0.00001 A
子类别：	SRAMs
最大压摆率：	0.0004 mA
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V
表面贴装：	YES
技术：	CMOS
温度等级：	INDUSTRIAL
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
宽度：	3.9 mm
Base Number Matches：	1

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