FQP4N80现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

当前位置：IC37首页_>F字母起始型号索引_>F字母起始型号索引第292页更新时间：2024-10-24 09:00:02

产品型号FQP4N80的概述

芯片FQP4N80的概述 FQP4N80是一种N沟道功率MOSFET，由Fairchild Semiconductor（现为ON Semiconductor）公司生产。这种器件在高电压和高电流应用中表现出色，特别适用于开关电源、直流-直流转换器、电机驱动和其他高效电源管理系统。因为其较低的开关损耗和较高的热稳定性，使得FQP4N80在工业和消费类电子的广泛应用中均得到了认可。 FQP4N80的命名由几个部分构成： - “FQ”表示它是Fairchild公司生产的； - “P”代表它是一种功率MOSFET； - “4N80”则是表征特定的电流和电压类别，其中“80”代表其可承受的最高电压为800V。该器件在电气特性和散热性能上都有很好的平衡，能够在各种苛刻环境下稳定运行。芯片FQP4N80的详细参数 FQP4N80的技术参数包括： - 最大漏极-源极电压（V_DS）: 800V - ...

产品型号FQP4N80的Datasheet PDF文件预览

September 2000

QFET

FQP4N80

800V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

•

3.9A, 800V, R

= 3.6Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 19 nC)

Low Crss ( typical 8.6 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

3 5

TO-220

FQP Series

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP4N80

800

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

3.9

- Continuous (T = 100°C)

2.47

(Note 1)

Drain Current

- Pulsed

15.6

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

460

3.9

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

4.0

Power Dissipation (T = 25°C)

130

- Derate above 25°C

Operating and Storage Temperature Range

1.04

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

0.96

Units

°C/W

θJC

θCS

θJA

0.5

62.5

Rev. A, September 2000

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

= 0 V, I = 250 µA

GS D

Drain-Source Breakdown Voltage

800

DSS

∆BV

Breakdown Voltage Temperature

Coefficient

DSS

= 250 µA, Referenced to 25°C

0.95

V/°C

∆T

= 800 V, V = 0 V

100

-100

µA

DSS

Zero Gate Voltage Drain Current

= 640 V, T = 125°C

= 30 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

GSSF

= -30 V, V = 0 V

GSSR

On Characteristics

= V , I = 250 µA

Gate Threshold Voltage

3.0

5.0

3.6

Ω

GS(th)

Static Drain-Source

On-Resistance

DS(on)

=10V,I =1.95A

2.8

3.8

= 50 V, I = 1.95 A

(Note 4)

Forward Transconductance

Dynamic Characteristics

Input Capacitance

680

880

100

iss

= 25 V, V = 0 V,

Output Capacitance

oss

rss

f = 1.0 MHz

Reverse Transfer Capacitance

8.6

Switching Characteristics

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

4.2

9.1

100

d(on)

= 400 V, I = 3.9 A,

= 25 Ω

d(off)

(Note 4, 5)

= 640 V, I = 3.9 A,

= 10 V

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

3.9

15.6

1.4

Maximum Pulsed Drain-Source Diode Forward Current

= 0 V, I = 3.9 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

= 0 V, I = 3.9 A,

575

3.65

µC

(Note 4)

dI / dt = 100 A/µs

Reverse Recovery Charge

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 57mH, I = 3.9A, V = 50V, R = 25 Ω, Starting T = 25°C

3. I ≤ 3.9A, di/dt ≤ 200A/µs, V ≤ BV Starting T = 25°C

DSS, J

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Rev. A, September 2000

Typical Characteristics

V_GS

10¹

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

10⁰

Bottom : 5.5 V

150^oC

25^oC

10⁰

-1

-55^oC

※

Notes :

※

Notes :

1. 250 s Pulse Test

1. V_DS= 50V

℃

2. T_C= 25

2. 250 s Pulse Test

-2

-1

10⁰

10¹

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

10¹

V_GS= 10V

V_GS= 20V

10⁰

℃

150

25℃

※

Notes :

1. V_GS= 0V

※

℃

Note : T = 25

2. 250 s Pulse Test

-1

0.2

0.4

0.6

0.8

1.0

1.2

I_D, Drain Current [A]

V_SD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

1200

1000

800

600

400

200

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C

V_DS= 160V

V_DS= 400V

V_DS= 640V

C_rss= C_gd

iss

C_oss

※

Notes :

1. V_GS= 0 V

2. f = 1 MHz

rss

※

Note : I_D= 3.9A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Rev. A, September 2000

Typical Characteristics (Continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

※Notes :

1. V_GS= 0 V

2. I_D= 250 μA

0.9

※

Notes :

1. V_GS= 10 V

2. I_D= 1.95 A

0.8

-100

-50

100

150

200

-100

-50

100

150

200

T_J, Junction Temperature [^oC]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Operation in This Area

is Limited by R _DS(on)

10¹

10⁰

100

1 ms

10 ms

-1

※

Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

-2

10⁰

10¹

10²

10³

100

125

150

℃

T_C, Case Temperature [

]

V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

1 0 ⁰

D = 0 .5

※

N o te s

1 . Z _θ_{J C}(t)

2 . D u ty F a c to r, D = t₁/t₂

℃

/W M a x .

0 .9 6

0 .2

3 . T _{J M}

T _C

P _D

* Z _θ_{J C}(t)

1 0 ^-1

0 .1

0 .0 5

P_DM

0 .0 2

0 .0 1

t₁

s in g le p u ls e

t₂

1 0 ^-2

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

Rev. A, September 2000

Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

Q_g

12V

200nF

10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

3mA

Charge

Resistive Switching Test Circuit & Waveforms

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

----

E_AS

L I_AS

V_DS

I _D

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DD

V_DS(t)

DUT

10V

t _p

Time

Rev. A, September 2000

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

Rev. A, September 2000

Package Dimensions

TO-220

4.50 ±0.20

9.90 ±0.20

(8.70)

+0.10

–0.05

1.30

ø3.60 ±0.10

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10

+0.10

–0.05

0.50

2.40 ±0.20

2.54TYP

[2.54 ±0.20]

10.00 ±0.20

Rev. A, September 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

VCX™

ACEx™

FASTr™

QFET™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

GlobalOptoisolator™

GTO™

HiSeC™

QS™

QT Optoelectronics™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

ISOPLANAR™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

POP™

E²CMOS™

EnSigna™

FACT™

FACT Quiet Series™

FAST^®

PowerTrench^®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. F1

FQP4N80相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

柒号芯城电子商务（深圳）有限公司服务专线: 0755-83209937 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

FQP4N80产品参数

型号:	FQP4N80
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
零件包装代码：	TO-220
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
制造商包装代码：	3LD, TO220, JEDEC, MOLDED
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.72
雪崩能效等级（Eas）：	460 mJ
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	800 V
最大漏极电流 (Abs) (ID)：	3.9 A
最大漏极电流 (ID)：	3.9 A
最大漏源导通电阻：	3.6 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	130 W
最大脉冲漏极电流 (IDM)：	15.6 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号FQP4N80的概述

产品型号FQP4N80的Datasheet PDF文件预览

FQP4N80相关产品

FQP4N80相关文章

IC37:专业IC行业平台