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  • FSQ510MX图
  • 深圳市高捷芯城科技有限公司

     该会员已使用本站11年以上
  • FSQ510MX 现货库存
  • 数量5768 
  • 厂家onsemi(安森美) 
  • 封装MLSOP-7-2 
  • 批号23+ 
  • 百分百原装正品,可原型号开票
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    QQ:3007947087QQ:3007947087 复制
  • 0755-83062789 QQ:3007977934QQ:3007947087
  • FSQ510图
  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • FSQ510 现货库存
  • 数量12500 
  • 厂家FSC可看货 
  • 封装DIP-32 
  • 批号23+ 
  • 只做原装现货假一罚十
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    QQ:2924695115QQ:2924695115 复制
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  • FSQ510图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • FSQ510 现货库存
  • 数量26800 
  • 厂家on 
  • 封装PDIP7 MINUS PIN 6 GW 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
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  • FSQ510图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • FSQ510 现货库存
  • 数量6980 
  • 厂家ON 
  • 封装PDIP7 MINUS PIN 6 GW 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
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  • FSQ510图
  • 北京耐芯威科技有限公司

     该会员已使用本站12年以上
  • FSQ510 优势库存
  • 数量5000 
  • 厂家ON Semiconductor 
  • 封装7-DIP 
  • 批号 
  • 原装正品 优势现货
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    QQ:1344056792QQ:1344056792 复制
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  • FSQ510图
  • 北京耐芯威科技有限公司

     该会员已使用本站12年以上
  • FSQ510 热卖库存
  • 数量5000 
  • 厂家ON Semiconductor 
  • 封装7-DIP 
  • 批号 
  • 原装正品 优势现货
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  • FSQ510图
  • 北京耐芯威科技有限公司

     该会员已使用本站12年以上
  • FSQ510 热卖库存
  • 数量5000 
  • 厂家ON Semiconductor 
  • 封装7-DIP 
  • 批号 
  • 原装正品 优势现货
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    QQ:1344056792QQ:1344056792 复制
  • 96-010-62104931 QQ:2880824479QQ:1344056792
  • FSQ510MX图
  • 深圳市婷轩实业有限公司

     该会员已使用本站6年以上
  • FSQ510MX 热卖库存
  • 数量1000 
  • 厂家ON 
  • 封装SOP7 
  • 批号23+ 
  • 原装现货 真实库存
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    QQ:3026548067QQ:3026548067 复制
  • 0755-89608519 QQ:2881943288QQ:3026548067
  • FSQ510图
  • 深圳市拓森弘电子有限公司

     该会员已使用本站1年以上
  • FSQ510
  • 数量5300 
  • 厂家Freescale(飞思卡尔) 
  • 封装 
  • 批号21+ 
  • 全新原装正品,库存现货实报
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  • 13714410484 QQ:1300774727
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  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • FSQ510RJ
  • 数量9315 
  • 厂家TE-泰科 
  • 封装车规-线绕电阻 
  • 批号▉▉:2年内 
  • ▉▉¥3一一有问必回一一有长期订货一备货HK仓库
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  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • FSQ510图
  • 深圳市正信鑫科技有限公司

     该会员已使用本站12年以上
  • FSQ510
  • 数量5894 
  • 厂家Fairchild 
  • 封装原厂封装 
  • 批号22+ 
  • 原装正品★真实库存★价格优势★欢迎来电洽谈
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    QQ:2440138151QQ:2440138151 复制
  • 0755-22655674 QQ:1686616797QQ:2440138151
  • FSQ510图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • FSQ510
  • 数量36218 
  • 厂家ON-安森美 
  • 封装7DIP 
  • 批号▉▉:2年内 
  • ▉▉¥3.6元一有问必回一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • FSQ510H图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • FSQ510H
  • 数量5000 
  • 厂家 
  • 封装 
  • 批号16+ 
  • 百分百原装正品,现货库存
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    QQ:1594462451QQ:1594462451 复制
  • 010-62106431 QQ:857273081QQ:1594462451
  • FSQ510MX图
  • 深圳市积美福电子科技有限公司

     该会员已使用本站4年以上
  • FSQ510MX
  • 数量1560 
  • 厂家FAIRCHILDONSEMICONDUCTOR 
  • 封装NA 
  • 批号21+ 
  • 只做原装正品,深圳现货库存
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    QQ:499959596QQ:499959596 复制
  • 0755-83228296 QQ:647176908QQ:499959596
  • FSQ510图
  • 北京耐芯威科技有限公司

     该会员已使用本站12年以上
  • FSQ510
  • 数量5000 
  • 厂家ON Semiconductor 
  • 封装7-DIP 
  • 批号21+ 
  • 全新原装、现货库存,欢迎询价
  • QQ:2880824479QQ:2880824479 复制
    QQ:1344056792QQ:1344056792 复制
  • 96-010-62104931 QQ:2880824479QQ:1344056792
  • FSQ510图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • FSQ510
  • 数量3265 
  • 厂家FAIRCHILD/仙童 
  • 封装NA/ 
  • 批号23+ 
  • 原装现货,当天可交货,原型号开票
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    QQ:3007947087QQ:3007947087 复制
  • 0755-82546830 QQ:3007977934QQ:3007947087
  • FSQ510图
  • 北京耐芯威科技有限公司

     该会员已使用本站13年以上
  • FSQ510
  • 数量5000 
  • 厂家ON Semiconductor 
  • 封装7-DIP 
  • 批号21+ 
  • 全新原装、现货库存,欢迎询价
  • QQ:2880824479QQ:2880824479 复制
    QQ:1344056792QQ:1344056792 复制
  • 86-010-010-62104931 QQ:2880824479QQ:1344056792
  • FSQ510图
  • 集好芯城

     该会员已使用本站13年以上
  • FSQ510
  • 数量18382 
  • 厂家FAIRCHILD/仙童 
  • 封装DIP8 
  • 批号最新批次 
  • 原装原厂 现货现卖
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    QQ:3008092965QQ:3008092965 复制
  • 0755-83239307 QQ:3008092965QQ:3008092965
  • FSQ510图
  • 深圳市中杰盛科技有限公司

     该会员已使用本站14年以上
  • FSQ510
  • 数量12000 
  • 厂家Fairchild 
  • 封装PDIP-7 
  • 批号24+ 
  • 【原装优势★★★绝对有货】
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  • 0755-22968359 QQ:409801605
  • FSQ510图
  • 深圳市恒达亿科技有限公司

     该会员已使用本站12年以上
  • FSQ510
  • 数量6000 
  • 厂家FAI 
  • 封装DIP7 
  • 批号25+ 
  • 全新原装公司现货销售
  • QQ:1245773710QQ:1245773710 复制
    QQ:867789136QQ:867789136 复制
  • 0755-82772189 QQ:1245773710QQ:867789136
  • FSQ510图
  • 深圳市三得电子有限公司

     该会员已使用本站15年以上
  • FSQ510
  • 数量31619 
  • 厂家FAIRCHILD/仙童 
  • 封装DIP-7 
  • 批号2024 
  • 深圳原装现货库存,欢迎咨询合作
  • QQ:414322027QQ:414322027 复制
    QQ:565106636QQ:565106636 复制
  • 15026993318 QQ:414322027QQ:565106636
  • FSQ510图
  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • FSQ510
  • 数量25345 
  • 厂家FSC可看货 
  • 封装
  • 批号2023+ 
  • 绝对原装正品全新进口深圳现货
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    QQ:515102657QQ:515102657 复制
  • 美驻深办0755-83777708“进口原装正品专供” QQ:1002316308QQ:515102657
  • FSQ510图
  • 上海熠富电子科技有限公司

     该会员已使用本站15年以上
  • FSQ510
  • 数量8595 
  • 厂家
  • 封装N/A 
  • 批号2024 
  • 上海原装现货库存,欢迎查询!
  • QQ:2719079875QQ:2719079875 复制
    QQ:2300949663QQ:2300949663 复制
  • 15821228847 QQ:2719079875QQ:2300949663
  • FSQ510图
  • 深圳市硅诺电子科技有限公司

     该会员已使用本站8年以上
  • FSQ510
  • 数量23456 
  • 厂家FAIRCHIL 
  • 封装DIP8 
  • 批号17+ 
  • 原厂指定分销商,有意请来电或QQ洽谈
  • QQ:1091796029QQ:1091796029 复制
    QQ:916896414QQ:916896414 复制
  • 0755-82772151 QQ:1091796029QQ:916896414
  • FSQ510图
  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
  • FSQ510
  • 数量5000 
  • 厂家ON Semiconductor 
  • 封装7-DIP 
  • 批号2024+ 
  • 全新原装、现货库存,欢迎询价
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    QQ:1344056792QQ:1344056792 复制
  • 010-62104931 QQ:2880824479QQ:1344056792
  • FSQ510图
  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • FSQ510
  • 数量15000 
  • 厂家FAIRCHILD/仙童 
  • 封装DIP7 
  • 批号23+ 
  • 全新原装现货,价格优势。
  • QQ:2103443489QQ:2103443489 复制
    QQ:2924695115QQ:2924695115 复制
  • 0755-82702619 QQ:2103443489QQ:2924695115
  • FSQ510图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • FSQ510
  • 数量5000 
  • 厂家欧美编码 394 
  • 封装贴/插片 
  • 批号2024+ 
  • 百分百原装正品,现货库存
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    QQ:1594462451QQ:1594462451 复制
  • 010-62104791 QQ:857273081QQ:1594462451
  • FSQ510图
  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
  • FSQ510
  • 数量5000 
  • 厂家ON Semiconductor 
  • 封装7-DIP 
  • 批号2024+ 
  • 原装正品 优势现货
  • QQ:2880824479QQ:2880824479 复制
    QQ:1344056792QQ:1344056792 复制
  • 010-62104931 QQ:2880824479QQ:1344056792
  • FSQ510图
  • 深圳市毅创腾电子科技有限公司

     该会员已使用本站16年以上
  • FSQ510
  • 数量9093 
  • 厂家ON/安森美 
  • 封装DIP-7 
  • 批号22+ 
  • ★只做原装★正品现货★原盒原标★
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  • 86-755-83616256 QQ:2355507162QQ:2355507165
  • FSQ510图
  • 深圳市创芯联科技有限公司

     该会员已使用本站9年以上
  • FSQ510
  • 数量15000 
  • 厂家FAI 
  • 封装DIP7 
  • 批号24+ 
  • 原厂货源/正品保证,诚信经营,欢迎询价
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  • FSQ510图
  • 千层芯半导体(深圳)有限公司

     该会员已使用本站9年以上
  • FSQ510
  • 数量5500 
  • 厂家FAIRCHI 
  • 封装SMD 
  • 批号2018+ 
  • 长期供应原装现货实单可谈
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  • 0755-83978748,0755-23611964,13760152475 QQ:2685694974QQ:2593109009
  • FSQ510MX图
  • 深圳市婷轩实业有限公司

     该会员已使用本站6年以上
  • FSQ510MX
  • 数量5000 
  • 厂家ON 
  • 封装7-LSOP 
  • 批号23+ 
  • 进口原装现货热卖
  • QQ:2881943288QQ:2881943288 复制
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  • FSQ510图
  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
  • FSQ510
  • 数量8800 
  • 厂家ON/安森美 
  • 封装SMD 
  • 批号新年份 
  • 羿芯诚只做原装,原厂渠道,价格优势可谈!
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  • FSQ510图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • FSQ510
  • 数量26800 
  • 厂家on 
  • 封装PDIP7 MINUS PIN 6 GW 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:1435424310QQ:1435424310 复制
  • 0755-84507451 QQ:1435424310
  • FSQ510图
  • 深圳市富莱微科技有限公司

     该会员已使用本站6年以上
  • FSQ510
  • 数量6164 
  • 厂家ON Semiconductor 
  • 封装8-DIP , 7 Leads 
  • 批号20+ 
  • 进口原装,公司现货
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  • FSQ510图
  • 深圳市芯柏然科技有限公司

     该会员已使用本站7年以上
  • FSQ510
  • 数量26800 
  • 厂家on 
  • 封装PDIP7 MINUS PIN 6 GW 
  • 批号22+ 
  • 授权代理直销,原厂原装现货,假一罚十,特价销售
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  • FSQ510图
  • 深圳市勤思达科技有限公司

     该会员已使用本站14年以上
  • FSQ510
  • 数量150000 
  • 厂家FAIRCHILD 
  • 封装DIP7 
  • 批号2019+ 
  • 全新原装,绝对正品,公司大量现货供应.
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产品型号FSQ510的概述

芯片FSQ510的概述 FSQ510是一款高性能的功率MOSFET,广泛应用于电源转换和放大器设计中。由于其优异的电性能和低导通电阻,FSQ510在电源管理、DC-DC转换器以及其他功率控制应用中具有显著优势。该芯片能够提供高效率和可靠性,使其在各种电子设备中,尤其是在需要高频率和高效率的场合中,备受青睐。 FSQ510的设计特点使其特别适合用于处理大功率负载。其结构设计利用了现代半导体技术,允许该芯片在较低的输入电压和电流条件下实现更高的输出功率。这种特性对于便携式设备和节能技术来说尤其重要。 芯片FSQ510的详细参数 FSQ510的主要技术参数包括: - 类型:N沟道功率MOSFET - 最大漏源电压(VDS):为确保电路的稳定性,该芯片的最大漏源电压一般达到60V。 - 最大漏极电流(ID):FSQ510能够支持高达60A的漏极电流,这一特性使其在高功率应用中表现出色。 - 导...

产品型号FSQ510的Datasheet PDF文件预览

PRELIMINARY DATASHEET  
August 2006  
FSQ510, FSQ510H — Green Mode Fairchild Power  
Switch (FPSTM) for Quasi-Resonant Converter  
– Low EMI and High Efficiency  
Features  
Applications  
ƒ Uses a DMOS Integrated Power Switch  
ƒ Cell Phone Chargers  
ƒ Optimized for Quasi-Resonant Converter (QRC)  
ƒ Auxiliary Power Supplies for PC and White Goods  
ƒ Low EMI through Variable Frequency Control and  
Description  
Inherent Frequency Modulation  
A Quasi-Resonant Converter (QRC) generally shows  
lower EMI and higher power conversion efficiency than a  
ƒ High Efficiency through Minimum Voltage Switching  
ƒ Extended Quasi-Resonant Switching for Wide Load  
conventional hard-switched converter with  
a fixed  
Ranges  
switching frequency. The FSQ510(H) is an integrated  
Pulse-Width Modulation (PWM) controller and  
SenseFET specifically designed for quasi-resonant off-  
line Switch Mode Power Supplies (SMPS) with minimal  
external components. The PWM controller includes an  
integrated fixed-frequency oscillator, Under-Voltage  
Lockout (UVLO), Leading Edge Blanking (LEB),  
optimized gate driver, internal soft start, temperature-  
compensated precise current sources for loop  
compensation, and self-protection circuitry. Compared  
with discrete MOSFET and PWM controller solution, the  
FSQ510(H) can reduce total cost, component count,  
size and weight; while simultaneously increasing  
efficiency, productivity, and system reliability. This  
device provides a basic platform that is well suited for  
cost-effective designs of quasi-resonant switching  
flyback converters.  
ƒ Small Frequency Variation for Wide Load Ranges  
ƒ Advanced Burst-Mode Operation for Low Standby  
Power Consumption  
ƒ Pulse-by-Pulse Current Limit  
ƒ Various Protection Functions: Overload Protection  
(OLP), Abnormal Over-Current Protection (AOCP),  
Internal Thermal Shutdown (TSD) with Hysteresis  
ƒ Under-Voltage Lockout (UVLO) with Hysteresis  
ƒ Internal Start-up Circuit  
ƒ Internal High-Voltage SenseFET (700V)  
ƒ Built-in Soft Start (5ms)  
Ordering Information  
Maximum Output Power (1)  
Replaces  
Operating  
Temperature  
Range  
230VAC ± 15%(2)  
85-265VAC  
Part  
Number  
Pb-  
Free  
Current RDS(ON)  
Limit (MAX)  
Package  
Devices  
Open  
Adapter(3)  
Open  
Adapter(3)  
Frame(4)  
Frame(4)  
FSQ510 7-DIP  
FSQ510H 8-DIPH  
Yes -25to +85320mA  
Yes -25to +85320mA  
5W  
5W  
7W  
7W  
4W  
4W  
5W  
FSD210B  
32Ω  
32Ω  
5W  
FSD210HD  
Notes:  
1. The junction temperature can limit the maximum output power.  
2. 230VAC or 100/115VAC with doubler.  
3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient.  
4. Maximum practical continuous power in an open-frame design at 50°C ambient temperature.  
© 2006 Fairchild Semiconductor Corporation  
FSCQ510, FSCQ510H Rev. 0.0.3  
www.fairchildsemi.com  
PRELIMINARY DATASHEET  
Application Circuit  
Vo  
AC  
IN  
VSTR  
D
PWM  
GND  
Sync  
VFB  
VCC  
Figure 1. Typical Application Circuit  
Internal Block Diagram  
Sync  
4 (3)  
VSTR  
8 (1)  
Vcc  
5 (7)  
D
7 (8)  
+
OSC  
0.7V  
/ 0.1V  
-
+
-
+
-
Vref  
0.75 / 0.85V  
VBurst  
8.7V  
/ 6.7V  
Vcc good  
Vref  
Idelay  
Vref  
IFB  
PWM  
VFB  
6R  
3
(2)  
S
R
Q
Q
Gate  
driver  
R
LEB  
360ns  
0.4V  
AOCP  
TSD  
1,2  
(4,5,6)  
S
R
Q
Q
Vocp (0.8V)  
2.5us time  
delay  
GND  
VSD  
Vcc good  
Soft  
Start  
(5ms)  
4.5V  
A(B): A stands for the pin number for 7-DIP  
B stands for the pin number for 8-DIPH  
Figure 2. Internal Block Diagram  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
2
PRELIMINARY DATASHEET  
Pin Assignments  
GND  
GND  
VFB  
VSTR  
D
VSTR  
VFB  
D
VCC  
FSQ510  
FSQ510H  
Sync  
GND  
GND  
GND  
Sync  
VCC  
Figure 3. Package diagrams for FSQ510 and FSQ510H  
Pin Definitions  
Pin #  
1,2(5)  
(4,5,6)(6)  
Name  
Description  
GND  
This pin is the control ground and the SenseFET source.  
This pin is internally connected to the inverting input of the PWM comparator.  
The collector of an opto-coupler is typically tied to this pin. For stable  
operation, a capacitor should be placed between this pin and GND. If the  
voltage of this pin reaches 4.5V, the overload protection triggers, which shuts  
down the FPS.  
3 (2)  
4 (3)  
VFB  
This pin is internally connected to the sync-detect comparator for quasi-  
resonant switching. In normal quasi-resonant operation, the threshold of the  
sync comparator is 0.7V/0.1V.  
Sync  
This pin is the positive supply input. This pin provides internal operating current  
for both start-up and steady-state operation.  
5 (7)  
7 (8)  
VCC  
D
High-voltage power SenseFET drain connection.  
This pin is connected directly, or through a resistor, to the high-voltage DC link.  
At startup, the internal high-voltage current source supplies internal bias and  
charges the external capacitor connected to the VCC pin. Once VCC reaches  
8.7V, the internal current source is disabled.  
8 (1)  
VSTR  
Notes:  
5. Pin numbers for 7-DIP.  
6. Pin numbers for 8-DIPH are in parenthesis.  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
3
PRELIMINARY DATASHEET  
Absolute Maximum Ratings  
The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The  
device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables  
are not guaranteed at the absolute maximum ratings. The “Recommended Operating Conditions” table defines the  
conditions for actual device operation.  
Symbol  
Parameter  
Min.  
700  
Max.  
Unit  
VSTR  
VSTR Pin Voltage  
V
V
VDS  
VCC  
VFB  
VSync  
PD  
Drain Pin Voltage  
700  
Supply Voltage  
20  
6.5  
6.5  
V
Feedback Voltage Range  
Sync Pin Voltage  
-0.3  
-0.3  
V
V
Total Power Dissipation  
Operating Junction Temperature  
Operating Ambient Temperature  
Storage Temperature  
W
°C  
°C  
°C  
TJ  
+150  
+85  
TA  
-25  
-55  
TSTG  
+150  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
4
PRELIMINARY DATASHEET  
Conditions  
Electrical Characteristics  
TJ = 25°C unless otherwise specified.  
Symbol  
Parameter  
Min. Typ. Max.  
Unit  
SenseFET Section  
BVDSS  
IDSS  
Drain-Source Breakdown Voltage  
Zero-Gate-Voltage Drain Current  
700  
V
V
CC = 0V, ID = 100μA  
VDS = 700V  
100  
μA  
28  
42  
32  
48  
TJ = 25°C, ID = 180mA  
TJ = 100°C, ID = 180mA  
VGS = 11V  
RDS(ON)  
Drain-Source On-State Resistance  
CISS  
COSS  
tr  
Input Capacitance(7)  
Output Capacitance(7)  
Rise Time(7)  
96  
pF  
pF  
ns  
ns  
VDS = 40V  
28  
VDS = 350V, ID = 25mA  
VDS = 350V, lD = 25mA  
100  
50  
tf  
Fall Time(7)  
Control Section  
fS  
Initial Switching Frequency  
VCC = 11V, VFB = 0.5V  
- 25°C < TJ < 125°C  
VCC = 11V, VFB = 0V  
87.7  
93.5  
±5  
100  
±8  
kHz  
%
Switching Frequency Variation(7)  
ΔfS  
IFB  
Feedback Source Current  
200  
7.2  
225  
250  
μA  
VCC = 11V, VFB = 1V,  
Vsync oscillation  
tB  
Switching Blanking Time  
7.7  
8.2  
3.2  
μs  
μs  
Quasi-Resonant-Detection-Window  
Time  
VCC = 11V, VFB = 1V,  
Vsync oscillation  
tW  
2.8  
54  
3.0  
60  
DMAX  
DMIN  
Maximum Duty Ratio  
Minimum Duty Ratio  
VCC = 11V, VFB = 3V  
VCC = 11V, VFB = 0V  
VFB = 0V, VCC sweep  
After Turn-on, VFB = 0V  
VSTR = 40V, VCC sweep  
66  
0
%
%
V
VSTART  
VSTOP  
tS/S  
8.0  
6.0  
3
8.7  
6.7  
5
9.4  
7.4  
7
UVLO Threshold Voltage  
V
Internal Soft-Start Time  
ms  
Burst-Mode Section  
VBURH  
0.75  
0.65  
0.85  
0.75  
100  
0.95  
0.85  
V
V
Burst-Mode Voltage  
V
CC = 11V, VFB sweep  
VBURL  
Hys.  
mV  
Protection Section  
ILIM  
Peak Current Limit  
di/dt = 150mA/µs  
280  
4.0  
320  
4.5  
360  
5.0  
mA  
V
V
DS = 40V, VCC = 11V,  
VSD  
Shutdown Feedback Voltage  
VFB sweep  
IDELAY  
tLEB  
Shutdown Delay Current  
VCC = 11V, VFB = 5V  
4
5
6
μA  
ns  
V
Leading Edge Blanking Time(7)  
Over-Current Latch Voltage(7)  
-
-
360  
0.8  
140  
60  
-
-
VOCP  
TSD  
130  
150  
°C  
°C  
Thermal Shutdown Temperature(7)  
Hys.  
Sync Section  
VSH  
VCC = 11V, VFB = 1V  
VCC = 11V, VFB = 1V  
0.55  
0.05  
180  
0.7  
0.1  
0.85  
0.15  
220  
V
V
Sync Threshold Voltage  
VSL  
tSync  
Sync Delay Time  
200  
ns  
Total Device Section  
Operating Supply Current (Control  
Part Only)  
IOP  
V
CC = 11V, VFB = 3V  
500  
1
900  
1.2  
μA  
mA  
V
ICH  
Start-up Charging Current  
VCC = VFB = 0V, VSTR = 40V  
VCC = VFB = 0V,  
VSTR  
Notes:  
Supply Voltage  
50  
700  
VSTR sweep  
7. These parameters, although guaranteed, are not 100% tested in production  
© 2006 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FSQ510, FSQ510H Rev. 0.0.3  
5
PRELIMINARY DATASHEET  
Comparison between FSD210B and FSQ510  
Function  
FSD210B  
FSQ510  
Advantages of FSQ510  
ƒ Fast response  
Control Mode  
Voltage Mode  
Current Mode  
ƒ Easy to design control loop  
ƒ Turn-on at minimum drain voltage  
ƒ High efficiency  
Constant Frequency  
PWM  
Quasi-Resonant  
Operation  
Operation Method  
ƒ Frequency variation depending on the  
EMI Reduction  
Method  
Frequency  
Modulation  
ripple of DC link voltage  
Valley Switching  
5ms (Built-in)  
ƒ High efficiency and low EMI  
ƒ Longer soft-start time  
Soft Start  
Protection  
3ms (Built-in)  
TSD  
TSD with hysteresis  
AOCP  
ƒ Enhanced Thermal Shutdown protection  
ƒ Abnormal Over-Current protection  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
6
PRELIMINARY DATASHEET  
Functional Description  
1. Startup: At startup, an internal high-voltage current  
source supplies the internal bias and charges the  
external capacitor (Ca) connected to the VCC pin, as  
illustrated in Figure 4. When VCC reaches 8.7V, the FPS  
begins switching and the internal high-voltage current  
source is disabled. The FPS continues normal switching  
operation and the power is supplied from the auxiliary  
transformer winding unless VCC goes below the stop  
voltage of 6.7V.  
2.2 Leading Edge Blanking (LEB): At the instant the  
internal SenseFET is turned on, a high-current spike  
usually occurs through the SenseFET, caused by  
primary-side capacitance and secondary-side rectifier  
reverse recovery. Excessive voltage across the Rsense  
resistor would lead to incorrect feedback operation in  
the current mode PWM control. To counter this effect,  
the FPS employs a leading edge blanking (LEB)  
circuit. This circuit inhibits the PWM comparator for a  
short time (tLEB) after the SenseFET is turned on.  
VDC  
Vcc  
Idelay  
Vref  
IFB  
Ca  
Vfb  
Vo  
SenseFET  
OSC  
3
H11A817A  
D1  
D2  
CB  
6R  
R
+
Gate  
driver  
Vcc  
VSTR  
Vfb*  
5
8
KA431  
-
ICH  
OLP  
Rsense  
VSD  
Vref  
6.7V/  
8.7V  
Vcc good  
Figure 5. Pulse-Width Modulation (PWM) Circuit  
Internal  
Bias  
3. Synchronization: The FSQ-series employs a quasi-  
resonant switching technique to minimize the switching  
noise and loss. The basic waveforms of the quasi-  
resonant converter are shown in Figure 6. To minimize  
the MOSFET's switching loss, the MOSFET should be  
turned on when the drain voltage reaches its minimum  
value, as shown in Figure 6. The minimum drain voltage  
is indirectly detected by monitoring the VCC winding  
voltage, as shown in Figure 6.  
Figure 4. Startup Block  
2. Feedback Control: FPS employs current mode  
control, as shown in Figure 5. An opto-coupler (such as  
the H11A817A) and shunt regulator (such as the  
KA431) are typically used to implement the feedback  
network. Comparing the feedback voltage with the  
voltage across the Rsense resistor makes it possible to  
control the switching duty cycle. When the reference pin  
voltage of the shunt regulator exceeds the internal  
reference voltage of 2.5V, the opto-coupler LED current  
increases, pulling down the feedback voltage and  
reducing the duty cycle. This event typically occurs  
when the input voltage is increased or the output load is  
decreased.  
VDS  
VRO  
VRO  
VDC  
TF  
VSync  
2.1 Pulse-by-Pulse Current Limit: Because current  
mode control is employed, the peak current through  
the SenseFET is limited by the inverting input of PWM  
comparator (Vfb*), as shown in Figure 5. Assuming  
that the 225µA current source flows only through the  
internal resistor (6R + R = 11 kΩ), the cathode voltage  
of diode D2 is about 2.5V. Since D1 is blocked when  
the feedback voltage (Vfb) exceeds 2.5V, the  
maximum voltage of the cathode of D2 is clamped at  
this voltage, thus clamping Vfb*. Therefore, the peak  
value of the current through the SenseFET is limited.  
0.7V  
0.1V  
200ns Delay  
MOSFET Gate  
ON  
ON  
Figure 6. Quasi-Resonant Switching Waveforms  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
7
PRELIMINARY DATASHEET  
feedback voltage (Vfb). If Vfb exceeds 2.5V, D1 is  
4. Protection Circuits: The FSQ-series has several  
self-protective functions, such as Overload Protection  
(OLP), Abnormal Over-Current Protection (AOCP), and  
Thermal Shutdown (TSD). All the protections are  
implemented as auto-restart mode. Once the fault  
condition is detected, switching is terminated and the  
SenseFET remains off. This causes VCC to fall. When  
VCC falls down to the Under-Voltage Lockout (UVLO)  
stop voltage of 6.7V, the protection is reset and the  
start-up circuit charges the VCC capacitor. When VCC  
reaches the start voltage of 8.7V, the FSQ-series  
resumes normal operation. If the fault condition is not  
removed, the SenseFET remains off and VCC drops to  
stop voltage again. In this manner, the auto-restart can  
alternately enable and disable the switching of the  
power SenseFET until the fault condition is eliminated.  
Because these protection circuits are fully integrated  
into the IC without external components, the reliability is  
improved without increasing cost.  
blocked and the 5µA current source starts to charge  
CB slowly up to VCC. In this condition, Vfb continues  
increasing until it reaches 4.5V, when the switching  
operation is terminated, as shown in Figure 8. The  
delay time for shutdown is the time required to charge  
CB from 2.5V to 4.5V with 5µA. A 20 ~ 50ms delay  
time is typical for most applications. This protection is  
implemented in auto restart mode.  
VFB  
Overload protection  
4.5V  
2.8V  
Fault  
occurs  
Fault  
removed  
Power  
on  
T12= CB*(6.0-2.8)/Idelay  
Vds  
T1  
Figure 8. Overload Protection  
T2  
t
4.2 Abnormal Over-Current Protection (AOCP):  
When the secondary rectifier diodes or the  
transformer pins are shorted, a steep current with  
extremely high di/dt can flow through the SenseFET  
during the LEB time. Even though the FSQ-series has  
OLP (Overload Protection), it is not enough to protect  
the FSQ-series in this abnormal case, since severe  
current stress is imposed on the SenseFET until OLP  
triggers. The FSQ-series has an internal AOCP  
circuit, as shown in Figure 9. When the gate turn-on  
signal is applied to the power SenseFET, the AOCP  
block is enabled and monitors the current through the  
sensing resistor. The voltage across the resistor is  
compared with a preset AOCP level. If the sensing  
resistor voltage is greater than the AOCP level, the  
set signal is applied to the latch, resulting in the  
shutdown of the SMPS.  
Vcc  
8.7V  
6.7V  
t
Normal  
operation  
Fault  
situation  
Normal  
operation  
Figure 7. Auto Restart Protection Waveforms  
4.1 Overload Protection (OLP): Overload is defined  
as the load current exceeding its normal level due to  
an unexpected abnormal event. In this situation, the  
protection circuit should trigger to protect the SMPS.  
However, even when the SMPS is in the normal  
operation, the overload protection circuit can be  
triggered during the load transition. To avoid this  
undesired operation, the overload protection circuit is  
designed to trigger only after a specified time to  
determine whether it is a transient situation or a true  
overload situation. Because of the pulse-by-pulse  
current limit capability, the maximum peak current  
through the SenseFET is limited, and therefore the  
maximum input power is restricted with a given input  
voltage. If the output consumes more than this  
maximum power, the output voltage (Vo) decreases  
below the set voltage. This reduces the current  
through the opto-coupler LED, which also reduces the  
opto-coupler transistor current, thus increasing the  
6R  
OSC  
S
Q
Q
PWM  
Gate  
driver  
R
R
LEB  
Rsense  
+
2
AOCP  
GND  
-
Vaocp  
Figure 9. Abnormal Over-Current Protection  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
8
PRELIMINARY DATASHEET  
4.3 Thermal Shutdown (TSD): The SenseFET and the  
Vo  
control IC in one package makes it easy for the control  
IC to detect the abnormal over temperature of the  
SenseFET. If the temperature exceeds approximately  
140°C, the thermal shutdown triggers. The FPS stops its  
operation at that time. The FPS operates in auto-restart  
mode until the temperature decreases to around 80°C.  
Then the normal operation of the FPS resumes.  
Vose  
t
VFB  
0.85V  
0.75V  
5. Soft Start: The FPS has an internal soft-start circuit  
that increases PWM comparator inverting input voltage,  
together with the SenseFET current, slowly after it starts  
up. The typical soft-start time is 5ms. The pulse width to  
the power switching device is progressively increased to  
Ids  
establish  
the  
correct  
working  
conditions  
for  
transformers, inductors, and capacitors. The voltage on  
the output capacitors is progressively increased with the  
intention of smoothly establishing the required output  
voltage. This helps prevent transformer saturation and  
reduce stress on the secondary diode during startup.  
Vds  
time  
6. Burst-Mode Operation: To minimize power  
dissipation in standby mode, the FPS enters burst-mode  
operation. As the load decreases, the feedback voltage  
decreases. As shown in Figure 10, the device  
automatically enters burst mode when the feedback  
voltage drops below VBURL (750mV). At this point,  
switching stops and the output voltages start to drop at a  
rate dependent on standby current load. This causes the  
feedback voltage to rise. Once it passes VBURH (850mV),  
switching resumes. The feedback voltage then falls and  
the process repeats. Burst-mode operation alternately  
enables and disables switching of the power SenseFET,  
thereby reducing switching loss in standby mode.  
Switching  
disabled  
Switching  
disabled  
T
4
T
2
T
3
T
1
Figure 10. Burst-Mode Operation  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
9
PRELIMINARY DATASHEET  
7. Advanced Quasi-Resonant Operation: To minimize  
Tsmax=10.7us  
switching loss and Electromagnetic Interference (EMI),  
the MOSFET turns on when the drain voltage reaches  
its minimum value in QRC converters. Due to  
Discontinuous Conduction Mode (DCM) operation, the  
feedback voltage is not changed, despite the DC link  
voltage ripples, if the load condition is not changed.  
Since the slope of the drain current is changed  
depending on the DC link voltage, the turn-on duration  
of MOSFET is variable with the DC link voltage ripples.  
The switching period is changed continuously with the  
DC link voltage ripples. Not only the switching at the  
instant of the minimum drain voltage, but also the  
continuous change of the switching period, reduces EMI.  
So QRC converters can scatter the EMI spectrum  
inherently.  
Ids  
Ids  
A
B
tB=7.7us  
Ts  
Ids  
Ids  
tB=7.7us  
Ts  
Typical products for QRC turn on the MOSFET when  
the first valley is detected. In this case, the range of the  
switching frequency is very wide as a result of the load  
variations. At a very light load, for example, the  
switching frequency can be as high as several hundred  
kHz. Some products for QRC, such as Fairchild’s  
FSCQ-series, define the turn-on instant of SenseFET  
change at the first valley into at the second valley when  
the load condition decreases under its predetermined  
level. The range of switching frequency narrows  
somewhat. For details, consult an FSCQ-series  
datasheet at:  
Ids  
Ids  
C
tB=7.7us  
Ts  
Ids  
Ids  
http://www.fairchildsemi.com/pf/FS/FSCQ1265RT.html  
D
tB=7.7us  
tW=3us  
The range of the switching frequency can be limited  
tightly in FSQ-series. Because a kind of blanking time  
(tB) is adopted, as shown in Figure 11, the switching  
frequency has minimum and maximum values.  
Tsmax=10.7us  
Figure 11. Advanced QRC Operation  
Once the SenseFET is enabled, the next start is  
prohibited during the blanking time (tB). After the  
blanking time, the controller finds the first valley within  
the duration of the quasi-resonant detection window time  
(tW) (Case A, B, and C). If no valley is found in tW, the  
internal SenseFET is forced to turn on at the end of tW  
(Case D). Therefore, FSQ510 and FSQ510H have  
minimum switching frequency of 93.5kHz and maximum  
switching frequency of 130kHz, as shown in Figure 12.  
When the resonant period is 2us  
130kHz  
C
Constant  
frequency  
A
B
103kHz  
93.5kHz  
D
Burst  
mode  
Po  
Figure 12. Switching Frequency Range of the  
Advanced QRC  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
10  
PRELIMINARY DATASHEET  
Application Information  
Application  
Output Power  
Input Voltage  
Output Voltage (Max Current)  
Cellular Phone Charger  
3.3W  
Universal Input (85-265Vac)  
5.1V (650mA)  
Features  
ƒ Low-cost, no Y-cap, cellular phone charger with CC/CV function  
ƒ Meets CISPR-22 Class-B requirement at full-load condition  
ƒ Meets CEC & Energy Star EPS program (arithmetic average of efficiencies at 25%, 50%, 75%, and 100% of full  
load – measured at the end of 0.2Ω /1.5m load line, enclosed in plastic case, room temperature, still air)  
ƒ Extremely low no-load standby power (<60mW at universal input)  
Key Design Notes  
ƒ The constant voltage (CV) mode control is implemented with resistors R2, R4, R5, and R6; feedback capacitor C8;  
shunt regulator of U1; and opto-coupler U3.  
ƒ The constant current (CC) mode control is designed with resistors R2, R4, R10, R11, R13, and R14; NPN transistor  
Q1; and NTC THR1.  
ƒ The divided bias winding voltage is applied to the sync pin with resistor R12, R15, and R16. The capacitor C9 is  
added to delay the divided bias winding for switching at the minimum drain voltage. The diode D7 is used to avoid a  
significant negative voltage on the sync pin.  
1. Schematic  
Figure 13. FSQ510 Schematic  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
11  
PRELIMINARY DATASHEET  
2. Transformer Construction  
ƒ Core: EE1616 (PM7/ Ae=20.5mm2)  
ƒ Bobbin: Horizontal 8 pins, 4 pins at each side, 10mm width (bobbin wall-to-wall)  
1
8
2mm  
2mm  
Top  
Np  
Ns  
Tape 4T  
Ncc  
Ns  
Tape 2T  
4
7
3
2
3
7
Tape 2T  
Tape 1T  
Shield  
8
4
Np  
1
2
Tape 4T  
Ncc  
Shield  
1
Bottom  
4
Figure 14. Transformer Construction Illustration  
3. Winding Specifications  
Pin (S F)  
Wire  
Turns  
Winding Method  
Shield  
Np  
1 X  
0.16φ×1  
48 Ts  
Solenoid winding  
Insulation: Polyester Tape t = 0.025mm, 4 Layers  
2 1  
0.16φ×1 92 Ts  
Insulation: Polyester Tape t = 0.025mm, 1 Layer  
4 X Copper 8mm× 0.05t 0.9 Ts  
Insulation: Polyester Tape t = 0.025mm, 2 Layers  
8 6  
0.55φ×1 5 Ts  
Insulation: Polyester Tape t = 0.025mm, 2 Layers  
Solenoid winding  
Copper Plate  
Shield  
Ns  
Solenoid winding  
Barrier Tape 2mm  
Center Solenoid winding  
Barrier Tape 2mm  
Ncc  
3 4  
0.16φ×2  
11 Ts  
Insulation: Polyester Tape t = 0.025mm, 4 Layers  
4. Electrical Characteristics  
Pin  
Specification  
1.2mH ± 10%  
Remark  
100kHz, 1V  
Short 2nd pins  
Inductance  
Leakage  
12  
12  
60µH maximum  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
12  
PRELIMINARY DATASHEET  
5. BOM List  
Number  
Quantity  
Description  
Reference Number  
Part Type  
1
2
1
1
1
1
1
1
1
1
1
5
2
1
1
1
1
1
1
1
1
1
1
1
1
3
1
2
1
1
1
1
1
1
1
1
Electrolytic Cap.  
C1, C2  
4.7µF, 400V  
680µF, 16V  
68µF, 16V  
2
Electrolytic Cap.  
Electrolytic Cap.  
Ceramic Cap.  
Electrolytic Cap.  
Electrolytic Cap.  
Ceramic Cap.  
Ceramic Cap.  
Film Cap.  
Schottky Diode  
Diode  
C3  
3
C4  
4
C5  
2.2µF  
5
C6  
4.7µF, 50V  
47µF, 50V  
6
C7  
7
C8  
47nF  
8
C9  
39pF  
9
CS2  
1nF, 1kV  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
D1  
SB240  
D2, D3, D4, D5, DS1  
1N4007  
Diode  
D6, D7  
1N4148  
Coil  
L1  
330µH  
Coil  
L2  
3.9µH  
4.7kΩ , 1/4W, 5%  
50Ω , 1/4W, 5%  
2.4kΩ , 2W, 5%  
1kΩ , 1/4W, 5%  
2.2kΩ , 1/4W, 1%  
2kΩ , 1/4W, 1%  
5Ω , 1/4W, 5%  
300Ω , 1/4W, 5%  
150Ω , 1/4W, 5%  
510Ω , 1/4W, 5%  
3Ω , 1/4W, 1%  
27kΩ , 1/8W, 5%  
6kΩ , 1/8W, 5%  
200kΩ , 1/4W, 5%  
10Ω , 1/4W, 5%  
TL431A  
Resistor  
R1  
Resistor  
R2  
Resistor  
R3  
Resistor  
R4  
Resistor  
R5  
R6  
Resistor  
Resistor  
R7  
Resistor  
R8  
Resistor  
R9  
Resistor  
R10  
Resistor  
R11, R13, R14  
R12  
Resistor  
Resistor  
R15, R16  
RS2  
Resistor  
Resistor  
RS4  
Shunt Regulator  
Control IC  
Opto-coupler  
Transistor  
Thermister  
Transformer  
U1  
U2  
FSQ510  
U3  
PC817A  
Q1  
KSP2222A  
10KD-5  
THR1  
TX1  
EE1616  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
13  
PRELIMINARY DATASHEET  
Package Dimensions  
Figure 15. FSQ510 7-DIP  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
14  
PRELIMINARY DATASHEET  
© 2006 Fairchild Semiconductor Corporation  
FSQ510, FSQ510H Rev. 0.0.3  
www.fairchildsemi.com  
15  
配单直通车
FSQ510产品参数
型号:FSQ510
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
零件包装代码:DIP
包装说明:DIP,
针数:7
Reach Compliance Code:unknown
风险等级:5.65
模拟集成电路 - 其他类型:SWITCHING CONTROLLER
控制模式:CURRENT-MODE
控制技术:PULSE WIDTH MODULATION
最小输入电压:7.4 V
标称输入电压:11 V
JESD-30 代码:R-PDIP-T7
JESD-609代码:e3
长度:9.2 mm
湿度敏感等级:NOT APPLICABLE
功能数量:1
端子数量:7
最高工作温度:85 °C
最低工作温度:-25 °C
最大输出电流:0.36 A
封装主体材料:PLASTIC/EPOXY
封装代码:DIP
封装形状:RECTANGULAR
封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:5.08 mm
表面贴装:NO
切换器配置:SINGLE
最大切换频率:100 kHz
温度等级:OTHER
端子面层:MATTE TIN
端子形式:THROUGH-HOLE
端子节距:2.54 mm
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm
Base Number Matches:1
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