PHASE CONTROL THYRISTOR H30TB/TLXX
TJ (0C)
Symbol
Characteristics
Conditions
Value
Unit
BLOCKING PARAMETERS
VRRM
VDRM
Repetitive peak reverse voltage
Repetitive peak off-stage
voltage
125
125
200-1600
200-1600
V
V
IRRM
IDRM
dV/dT
V = VRRM
V = VRRM
@ 67%VDRM
Repetitive peak reverse current
Repetitive peak off-state current
Rep. rate of change of voltage
125
125
125
15
15
600
mA
mA
V/μS
CONDUCTING PARAMETERS
180 sine, 50HZ,
TC = 850C
IF(AV)
Average on-state current
30
A
IRMS
ITSM
RMS on-state current
Surge on-state current
50
A
A
Sine wave, 10mS
without reverse
voltage
500
125
125
I2t
I2t
A2S
1250
1.72
On-state
current = 100A
VT
Peak on-state voltage drop
V
V0
r0
Threshold voltage
On-state slope resistance
125
125
0.95
6.40
V
mΩ
dIG/dT = 1A/µS
VGK = 1V
di/dt
Repetitive rate of rise of current
125
100
A/μS
TRIGGERING PARAMETERS
IGT
VD = 5V
Gate trigger current
Gate trigger voltage
25
25
100
mA
V
VGT
2.50
IL
IH
VD = 5V
VD = 5V
Latching Current
Holding Current
25
25
300
200
mA
mA
Pulse width
100μSec
PG –PEAK
Maximum Peak Gate Power
30
W
VFGM
IFGM
Maximum forward gate voltage
Maximum forward gate current
12
10
V
A
THERMAL & MECHANICAL PARAMETERS
Thermal impedance, 180
RTH (J-C)
0C/W
0C/W
0C
Junction to case
Case to heatsink
0.93
0.30
125
conduction, Sine
RTH (C-HK)
Thermal impedance
Maximum Permissible junction
temperature
TJ
TSTG
0C
Storage temperature range
-40 - 125
F
Mounting Torque
2
NM
For TB
For TL
30
15
W
Weight
gms
1 of 6
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