欢迎访问ic37.com |
会员登录 免费注册
发布采购
所在地: 型号: 精确
  • 批量询价
  •  
  • 供应商
  • 型号
  • 数量
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
  •  
  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • HAT2103R-EL
  • 数量-
  • 厂家-
  • 封装-
  • 批号-
  • -
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
更多
  • HAT2103R-EL-E图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • HAT2103R-EL-E 现货库存
  • 数量26800 
  • 厂家RENESAS 
  • 封装SOP 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:1435424310QQ:1435424310 复制
  • 0755-84507451 QQ:1435424310
  • HAT2103R-EL-E图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • HAT2103R-EL-E 现货库存
  • 数量1729 
  • 厂家RENESAS 
  • 封装SOP 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:2881512844QQ:2881512844 复制
  • 075584507705 QQ:2881512844
  • HAT2103R-EL图
  • 集好芯城

     该会员已使用本站13年以上
  • HAT2103R-EL
  • 数量10259 
  • 厂家RENESAS/瑞萨 
  • 封装 
  • 批号最新批次 
  • 原厂原装公司现货
  • QQ:3008092965QQ:3008092965 复制
    QQ:3008092965QQ:3008092965 复制
  • 0755-83239307 QQ:3008092965QQ:3008092965
  • HAT2103R-EL图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • HAT2103R-EL
  • 数量65000 
  • 厂家HIT 
  • 封装SOP 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
  • QQ:2881495753QQ:2881495753 复制
  • 0755-23605827 QQ:2881495753
  • HAT2103R-EL-E图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • HAT2103R-EL-E
  • 数量78800 
  • 厂家RENESAS-瑞萨 
  • 封装SOP-8.贴片 
  • 批号▉▉:2年内 
  • ▉▉¥10一一有问必回一一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • HAT2103R-EL图
  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
  • HAT2103R-EL
  • 数量6000 
  • 厂家HIT 
  • 封装SOP3.9mm 
  • 批号2024+ 
  • 原装正品,假一罚十
  • QQ:2880824479QQ:2880824479 复制
    QQ:1344056792QQ:1344056792 复制
  • 010-62104931 QQ:2880824479QQ:1344056792
  • HAT2103R-EL-E图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • HAT2103R-EL-E
  • 数量5700 
  • 厂家RENESAS/瑞萨 
  • 封装NA/ 
  • 批号23+ 
  • 优势代理渠道,原装正品,可全系列订货开增值税票
  • QQ:3007977934QQ:3007977934 复制
    QQ:3007947087QQ:3007947087 复制
  • 0755-82546830 QQ:3007977934QQ:3007947087
  • HAT2103R-EL-E图
  • 深圳市华芯盛世科技有限公司

     该会员已使用本站13年以上
  • HAT2103R-EL-E
  • 数量8650000 
  • 厂家RENESAS 
  • 封装SOP8 
  • 批号最新批号 
  • 一级代理,原装特价现货!
  • QQ:2881475757QQ:2881475757 复制
  • 0755-83225692 QQ:2881475757
  • HAT2103R-EL-E图
  • 深圳市华兴微电子有限公司

     该会员已使用本站16年以上
  • HAT2103R-EL-E
  • 数量5000 
  • 厂家Renesas 
  • 封装N/A 
  • 批号23+ 
  • 只做进口原装QQ询价,专营射频微波十五年。
  • QQ:604502381QQ:604502381 复制
  • 0755-83002105 QQ:604502381
  • HAT2103R-EL-E图
  • 深圳市毅创腾电子科技有限公司

     该会员已使用本站16年以上
  • HAT2103R-EL-E
  • 数量1729 
  • 厂家RENESAS 
  • 封装SOP 
  • 批号22+ 
  • ★只做原装★正品现货★原盒原标★
  • QQ:2355507165QQ:2355507165 复制
    QQ:2355507162QQ:2355507162 复制
  • 86-0755-83210909 QQ:2355507165QQ:2355507162
  • HAT2103R-EL-E图
  • 深圳市捷创芯微科技有限公司

     该会员已使用本站12年以上
  • HAT2103R-EL-E
  • 数量2019 
  • 厂家RENESAS 
  • 封装5700 
  • 批号05+ 
  • 不止网上数量 电压齐全 长期现货
  • QQ:1601859887QQ:1601859887 复制
    QQ:1191626386QQ:1191626386 复制
  • 0755-83226185 QQ:1601859887QQ:1191626386
  • HAT2103R-EL-E图
  • 深圳市芯柏然科技有限公司

     该会员已使用本站7年以上
  • HAT2103R-EL-E
  • 数量26800 
  • 厂家RENESAS 
  • 封装SOP 
  • 批号22+ 
  • 授权代理直销,原厂原装现货,假一罚十,特价销售
  • QQ:287673858QQ:287673858 复制
  • 0755-82533534 QQ:287673858
  • HAT2103R-EL-E图
  • 上海金庆电子技术有限公司

     该会员已使用本站15年以上
  • HAT2103R-EL-E
  • 数量1754 
  • 厂家RENESAS 
  • 封装 
  • 批号新 
  • 全新原装 货期两周
  • QQ:1484215649QQ:1484215649 复制
    QQ:729272152QQ:729272152 复制
  • 021-51872561 QQ:1484215649QQ:729272152
  • HAT2103R-EL-E图
  • 深圳市晨豪科技有限公司

     该会员已使用本站12年以上
  • HAT2103R-EL-E
  • 数量89630 
  • 厂家RENESAS/瑞萨 
  • 封装SOP-8 
  • 批号23+ 
  • 当天发货全新原装现货
  • QQ:1743149803QQ:1743149803 复制
    QQ:1852346906QQ:1852346906 复制
  • 0755-82732291 QQ:1743149803QQ:1852346906
  • HAT2103R-EL-E图
  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • HAT2103R-EL-E
  • 数量12000 
  • 厂家RENESAS/瑞萨 
  • 封装SOP-8 
  • 批号19+ 
  • 全新原装挺实单欢迎来撩/可开票
  • QQ:1092793871QQ:1092793871 复制
  • -0755-88910020 QQ:1092793871
  • HAT2103R-EL图
  • 深圳市一线半导体有限公司

     该会员已使用本站15年以上
  • HAT2103R-EL
  • 数量24500 
  • 厂家原厂品牌 
  • 封装原厂外观 
  • 批号 
  • 全新原装部分现货其他订货
  • QQ:2881493920QQ:2881493920 复制
    QQ:2881493921QQ:2881493921 复制
  • 0755-88608801多线 QQ:2881493920QQ:2881493921
  • HAT2103R-EL-E图
  • 深圳市一线半导体有限公司

     该会员已使用本站11年以上
  • HAT2103R-EL-E
  • 数量28000 
  • 厂家原厂品牌 
  • 封装原厂外观 
  • 批号 
  • 全新原装部分现货其他订货
  • QQ:2881493920QQ:2881493920 复制
    QQ:2881493921QQ:2881493921 复制
  • 0755-88608801多线 QQ:2881493920QQ:2881493921
  • HAT2103R-EL图
  • 深圳市科雨电子有限公司

     该会员已使用本站9年以上
  • HAT2103R-EL
  • 数量9800 
  • 厂家HIT 
  • 封装SOP3.9mm 
  • 批号24+ 
  • 原厂渠道,全新原装现货,欢迎查询!
  • QQ:97877805QQ:97877805 复制
  • 171-4729-0036(微信同号) QQ:97877805

产品型号HAT2105R的Datasheet PDF文件预览

HAT2105R  
Silicon N Channel Power MOS FET  
High Speed Power Switching  
REJ03G1369-0100  
Rev.1.00  
Apr 04, 2006  
Features  
Low on-resistance  
Capable of 4 V gate drive  
High density mounting  
Outline  
RENESAS Package code: PRSP0008DD-D  
(Package name: SOP-8<FP-8DAV>)  
7 8  
D D  
5 6  
D D  
5
6
7
2
4
8
1, 3  
2, 4  
Source  
Gate  
G
G
5, 6, 7, 8 Drain  
4
3
2
1
S1  
S3  
MOS1  
MOS2  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
V
200  
±15  
V
0.5  
A
Note1  
Drain peak current  
ID(pulse)  
2
A
Body-drain diode reverse drain current  
Channel dissipation  
IDR  
0.5  
A
Pch Note2  
Pch Note3  
Tch  
1.3  
W
W
°C  
°C  
2
Channel temperature  
Storage temperature  
150  
Tstg  
–55 to +150  
Notes: 1. PW 10 µs, duty cycle 1 %  
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s  
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s  
Rev.1.00 Apr 04, 2006 page 1 of 3  
HAT2105R  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
200  
±15  
Typ  
Max  
Unit  
V
Test Conditions  
ID = 10 mA, VGS = 0  
Drain to source breakdown voltage V(BR)DSS  
Gate to source breakdown voltage  
Gate to source leak current  
V(BR)GSS  
IGSS  
V
IG = ±100 µA, VDS = 0  
±10  
5
µA  
µA  
V
VGS = ±12 V, VDS = 0  
Zero gate voltage drain current  
Gate to source cutoff voltage  
IDSS  
VDS = 200 V, VGS = 0  
VGS(off)  
RDS(on)  
RDS(on)  
RDS(on)  
|yfs|  
1.0  
2.1  
2.2  
2.7  
5.5  
VDS = 10 V, ID = 1 mA  
Static drain to source on state  
resistance  
1.6  
1.9  
2.4  
0.86  
120  
29  
ID = 0.5 A, VGS = 10 V Note4  
ID = 0.5 A, VGS = 4 V Note4  
ID = 2 A, VGS = 5 V Note4  
ID = 0.5 A, VDS = 10 V Note4  
VDS = 10 V, VGS = 0, f = 1 MHz  
Forward transfer admittance  
Input capacitance  
0.56  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
10  
10  
VGS = 5 V, ID = 0.5 A,  
VDD 30 V  
14  
Turn-off delay time  
Fall time  
td(off)  
tf  
24  
9
Body–drain diode forward voltage  
Notes: 4. Pulse test  
VDF  
0.9  
1.4  
IF = 0.5 A, VGS = 0 Note4  
Rev.1.00 Apr 04, 2006 page 2 of 3  
HAT2105R  
Package Dimensions  
Package Name  
SOP-8  
JEITA Package Code  
RENESAS Code  
PRSP0008DD-D  
Previous Code  
FP-8DAV  
MASS[Typ.]  
0.085g  
P-SOP8-3.95 × 4.9-1.27  
1
D
*
bp  
5
8
1
Index mark  
NOTE)  
1. DIMENSIONS "*1(Nom)" AND "*2"  
DO NOT INCLUDE MOLD FLASH.  
2. DIMENSION "*3" DOES NOT  
INCLUDE TRIM OFFSET.  
4
Terminal cross section  
(Ni/Pd/Au plating)  
Z
3
bp  
*
M
x
e
Dimension in Millimeters  
Reference  
Symbol  
Min Nom Max  
D
E
4.90  
3.95  
5.3  
L1  
A2  
A1  
A
0.10  
0.14 0.25  
1.75  
0.34 0.40 0.46  
bp  
b1  
c
0.15 0.20 0.25  
c1  
L
0° 8°  
5.80 6.10 6.20  
1.27  
y
HE  
e
Detail F  
x
0.25  
y
0.1  
0.75  
Z
L
L1  
0.40 0.60 1.27  
1.08  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
HAT2105R-EL-E  
2500 pcs  
Taping  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.1.00 Apr 04, 2006 page 3 of 3  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology (Shanghai) Co., Ltd.  
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120  
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145  
Renesas Technology Malaysia Sdn. Bhd  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .6.0  
配单直通车
HAT2105R-EL-E产品参数
型号:HAT2105R-EL-E
Brand Name:Renesas
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Obsolete
零件包装代码:SOP
包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8
制造商包装代码:PRSP0008DD-D8
Reach Compliance Code:compliant
ECCN代码:EAR99
风险等级:5.84
Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):0.5 A
最大漏极电流 (ID):0.5 A
最大漏源导通电阻:5.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8
元件数量:2
端子数量:8
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):2 A
认证状态:Not Qualified
子类别:FET General Purpose Power
表面贴装:YES
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
  •  
  • 供货商
  • 型号 *
  • 数量*
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
批量询价选中的记录已选中0条,每次最多15条。
 复制成功!