HAT2168H-EL-E中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

当前位置：IC37首页_>H字母起始型号索引_>H字母起始型号索引第347页更新时间：2024-12-04 17:33:17

产品型号HAT2168H-EL-E的概述

HAT2168H-EL-E芯片概述在当今电子元器件不断发展的时代，各种芯片的应用场景日益繁广。HAT2168H-EL-E作为一种重要的集成电路芯片，尤其在信号处理和控制领域中展现了极大的潜力与价值。通过深入理解该芯片的特点、夹具和各种参数，使得设计人员能够在实际应用中轻松应对各种技术挑战。 HAT2168H-EL-E是一款高性能的放大器芯片，专门用于多种电子设备中，包括音频处理、传感器信号调理和无线通信终端等。这款芯片条形设计使其能更好地适应多种应用场景，尤其是需要高增益和低失真的场合。HAT2168H-EL-E的优越之处不仅在于它的简单易用性，还在于其在技术上的灵活性和调节能力。芯片详细参数 HAT2168H-EL-E的参数栏简洁明了，具体包括以下几个方面： - 工作电压：该芯片通常在3V到15V的范围内工作，使得其在不同的供电环境下均能表现良好。 - 增益：HAT2168H-E...

产品型号HAT2168H-EL-E的Datasheet PDF文件预览

HAT2168H

Silicon N Channel Power MOS FET

Power Switching

REJ03G0046-0700

Rev.7.00

Sep 20, 2005

Features

•

High speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 6 mΩ typ. (at V_GS= 10 V)

Outline

RENESAS Package code: PTZZ0005DA-A)

(Package name: LFPAK )

1, 2, 3 Source

Gate

Drain

S S S

1 2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±20

Note1

Drain peak current

I_D(pulse)

I_DR

120

Body-drain diode reverse drain current

Avalanche current

Note 2

I_AP

Note 2

Avalanche energy

E_AR

Channel dissipation

Pch ^Note3

θch-C

Tch

Channel to Case Thermal Resistance

Channel temperature

8.33

°C/W

°C

150

Storage temperature

Tstg

– 55 to + 150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

Rev.7.00 Sep 20, 2005 page 1 of 7

HAT2168H

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

±20

—

1.0

—

Typ

—

Max

—

Unit

Test Conditions

I_D= 10 mA, V_GS= 0

Drain to source breakdown voltage V_(BR)DSS

Gate to source breakdown voltage

Gate to source leak current

V_(BR)GSS

I_GSS

I_DSS

V_GS(off)

R_DS(on)

|y_fs|

—

I_G= ±100 µA, V_DS= 0

V_GS= ±16 V, V_DS= 0

—

±10

µA

Zero gate voltage drain current

Gate to source cutoff voltage

—

V_DS= 30 V, V_GS= 0

—

2.5

7.9

13.5

—

V_DS= 10 V, I _D= 1 mA

I_D= 15 A, V_GS= 10 V ^Note4

I_D= 15 A, V_GS= 4.5 V ^Note4

I_D= 15 A, V_DS= 10 V ^Note4

Static drain to source on state

resistance

6.0

8.8

mΩ

Forward transfer admittance

Input capacitance

Ciss

Coss

Crss

1730

400

130

0.55

—

Ω

V_DS= 10 V, V_GS= 0,

f = 1 MHz

Output capacitance

Reverse transfer capacitance

Gate Resistance

—

Total gate charge

—

V_DD= 10 V, V_GS= 4.5 V,

I_D= 30 A

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

Qgs

Qgd

t_d(on)

t_r

—

2.4

—

V_GS= 10 V, I_D= 15 A,

V_DD10 V, R_L= 0.67 Ω,

Rg = 4.7 Ω

—

Turn-off delay time

Fall time

t_d(off)

t_f

—

Body–drain diode forward voltage

V_DF

0.85

1.10

—

IF = 30 A, V_GS= 0 ^Note4

Body–drain diode reverse recovery

time

t_rr

IF = 30 A, V_GS= 0

di_F/ dt = 100 A/ µs

Notes: 4. Pulse test

Rev.7.00 Sep 20, 2005 page 2 of 7

HAT2168H

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

500

100

10 µs

PW = 10

Operation in

this area is

limited by R_DS(on)

0.1

Ta = 25°C

1 shot Pulse

0.01

100

150

200

0.1

0.3

100

Drain to Source Voltage V_DS(V)

Case Temperature Tc (°C)

Typical Output Characteristics

Typical Transfer Characteristics

10 V

V_DS= 10 V

Pulse Test

3.2 V

4.5 V

3.0 V

2.8 V

2.6 V

Tc = 75°C

_GS= 2.4 V

25°C

-25°C

Pulse Test

Gate to Source Voltage V_GS(V)

Drain to Source Voltage V_DS(V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

250

100

Pulse Test

200

150

100

V_GS= 4.5 V

_D= 20 A

10 V

10 A

5 A

0.3

100 30

1000

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

Rev.7.00 Sep 20, 2005 page 3 of 7

HAT2168H

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

100

Pulse Test

Tc = -25°C

I_D= 20 A

75°C

10 A, 5 A

25°C

V_GS= 4.5 V

5 A, 10 A, 20 A

10 V

0.3

0.1

V_DS= 10 V

Pulse Test

0.1 0.3

100

-25

50 75 100 125 150

Case Temperature Tc (°C)

Drain Current I_D(A)

Body-Drain Diode Reverse

Recovery Time

Typical Capacitance vs.

Drain to Source Voltage

10000

3000

100

Ciss

1000

300

Coss

Crss

100

di/dt = 100 A/µs

V_GS= 0

V_GS= 0, Ta = 25°C

f = 1 MHz

0.1

0.3

3 10 30

100

Reverse Drain Current I_DR(A)

Drain to Source Voltage V_DS(V)

Switching Characteristics

Dynamic Input Characteristics

100

_D= 30 A

d(off)

V_GS

V_DD= 25 V

10 V

5 V

V_DS

d(on)

V_DD= 25 V

10 V

5 V

V_GS= 10 V, V_DS= 10 V

Rg = 4.7 , duty ≤ 1 %

Ω

0.1 0.3

100

Gate Charge Qg (nc)

Drain Current I_D(A)

Rev.7.00 Sep 20, 2005 page 4 of 7

HAT2168H

Reverse Drain Current vs.

Source to Drain Voltage

Maximum Avalanche Energy vs.

Channel Temperature Derating

I_AP= 15 A

10 V

5 V

V_DD= 15 V

duty < 0.1 %

Rg ≥ 50 Ω

V_GS= 0

Pulse Test

1.6 2.0

0.4

0.8

1.2

100

125

150

Source to Drain Voltage V_SD(V)

Channel Temperature Tch (°C)

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

D = 1

0.5

0.3

0.1

θch - c(t) = γs (t) • θch - c

θch - c = 8.33°C/ W, Tc = 25°C

P_DM

D =

0.03

0.01

10 µ

100 µ

1 m

10 m

100 m

Pulse Width PW (s)

Avalanche Test Circuit

Avalanche Waveform

V_DSS

L • I_AP•

E_AR

V_DSS– V_DD

V_DS

Monitor

I_AP

Monitor

V_(BR)DSS

I_AP

V_DS

V_DD

D. U. T

I_D

Vin

50 Ω

15 V

V_DD

Rev.7.00 Sep 20, 2005 page 5 of 7

HAT2168H

Switching Time Test Circuit

Switching Time Waveform

90%

Vout

Monitor

Vin Monitor

D.U.T.

10%

Vin

R_L

Vout

10%

V_DS

= 10 V

Vin

10 V

90%

d(off)

d(on)

Rev.7.00 Sep 20, 2005 page 6 of 7

HAT2168H

Package Dimensions

JEITA Package Code

SC-100

RENESAS Code

PTZZ0005DA-A

Package Name

LFPAK

MASS[Typ.]

0.080g

Unit: mm

4.9

5.3 Max

0.25–⁺0⁰.^.0⁰3⁵

3.3

4.0 0.2

0.20 ⁺^–0⁰^.^.⁰⁰³⁵

0° – 8°

0.75 Max

0.10

0.40 0.06

1.27

0.25

(Ni/Pd/Au plating)

Ordering Information

Part Name

Quantity

Shipping Container

HAT2168H-EL-E

2500 pcs

Taping

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

Rev.7.00 Sep 20, 2005 page 7 of 7

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of

publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is

therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product

information before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor

home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to

evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes

no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life

is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a

product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater

use.

6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.

7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and

cannot be imported into a country other than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

RENESAS SALES OFFICES

http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

Renesas Technology Europe Limited

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.

Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900

Renesas Technology Hong Kong Ltd.

7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2730-6071

Renesas Technology Taiwan Co., Ltd.

10th Floor, No.99, Fushing North Road, Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology (Shanghai) Co., Ltd.

Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China

Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952

Renesas Technology Singapore Pte. Ltd.

1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001

Renesas Technology Korea Co., Ltd.

Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea

Tel: <82> 2-796-3115, Fax: <82> 2-796-2145

Renesas Technology Malaysia Sdn. Bhd.

Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia

Tel: <603> 7955-9390, Fax: <603> 7955-9510

Colophon .3.0

HAT2168H-EL-E相关文章

配单直通车

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

HAT2168H-EL-E产品参数

型号:	HAT2168H-EL-E
Brand Name：	Renesas
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Not Recommended
IHS 制造商：	RENESAS ELECTRONICS CORP
零件包装代码：	LFPAK
包装说明：	SMALL OUTLINE, R-PSSO-G4
针数：	5
制造商包装代码：	PTZZ0005DA-A5
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	7.7
Is Samacsys：	N
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	30 A
最大漏极电流 (ID)：	30 A
最大漏源导通电阻：	0.0135 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-G4
JESD-609代码：	e6
湿度敏感等级：	1
元件数量：	1
端子数量：	4
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	15 W
最大脉冲漏极电流 (IDM)：	120 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Tin/Bismuth (Sn/Bi)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	20
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号HAT2168H-EL-E的概述

产品型号HAT2168H-EL-E的Datasheet PDF文件预览

HAT2168H-EL-E相关产品

HAT2168H-EL-E相关文章

IC37:专业IC行业平台