HGTG30N60B3D全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

HGTG30N60B3D, HGT4E30N60B3DS

Data Sheet

December 2001

60A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Packaging

JEDEC STYLE TO-247

E

C

The HGTG30N60B3D, and HGT4E30N60B3DS are MOS

gated high voltage switching devices combining the best

features of MOSFETs and bipolar transistors. These devices

have the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

G

o

25 C and 150 C. The IGBT used is the development type

TA49170. The diode used in anti-parallel with the IGBT is the

development type TA49053.

TO-268AA

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

C

Formerly Developmental Type TA49172.

G

E

Ordering Information

PART NUMBER

PACKAGE

TO-247

TO-268AA

BRAND

G30N60B3D

HGTG30N60B3D

Symbol

HGT4E30N60B3DS

C

NOTE: When ordering, use the entire part number.

Features

G

o

• 60A, 600V, T = 25 C

C

• 600V Switching SOA Capability

E

o

• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T = 150 C

J

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

HGTG30N60B3D, HGT4E30N60B3DS

o

Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified

C

HGTG30N60B3D,

HGT4E30N60B3DS

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

600

V

CES

Collector Current Continuous

o

At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

60

A

V

C25

o

At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

30

25

C110

o

Average Diode Forward Current at 110 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

EC(AVG)

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

220

CM

GES

GEM

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

±20

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

o

±30

Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

J

60A at 600V

208

o

Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

W

D

o

Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.67

W/ C

C

o

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 150

260

C

J

STG

o

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

C

L

SC

Short Circuit Withstand Time (Note 2) at V

= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

4

µs

GE

10

GE

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

o

2. V

= 360V, T = 125 C, R = 3Ω.

J G

CE(PK)

o

Electrical Specifications

T = 25 C, Unless Otherwise Specified

C

PARAMETER

SYMBOL

BV

TEST CONDITIONS

= 250µA, V = 0V

MIN

TYP

-

MAX

UNITS

V

Collector to Emitter Breakdown Voltage

Collector to Emitter Leakage Current

I

600

-

CES

C

GE

o

I

V

= BV

T

= 25 C

-

250

µA

mA

V

CES

CE

CES

C

o

= 150 C

-

3

o

Collector to Emitter Saturation Voltage

V

I

V

= I

C110

= 15V

,

= 25 C

-

1.45

1.7

5

1.9

CE(SAT)

C

GE

o

= 150 C

-

2.1

V

Gate to Emitter Threshold Voltage

Gate to Emitter Leakage Current

Switching SOA

V

I

= 250µA, V

= V

GE

4.2

6

V

GE(TH)

C

CE

I

V

= ±20V

-

±250

nA

A

GES

GE

o

SSOA

T

V

= 150 C, R = 3Ω,

V

= 480V

200

-

J

G

CE (PK)

= 15V, L = 100µH

GE

= 600V

60

-

A

CE (PK)

Gate to Emitter Plateau Voltage

On-State Gate Charge

V

I

= I

, V

= 0.5 BV

CES

7.2

170

230

36

25

137

58

550

680

-

190

250

-

V

GEP

C

C110 CE

Q

= I

C110

,

V

= 15V

-

nC

ns

µJ

G(ON)

GE

V

= 0.5 BV

CE

CES

V

= 20V

-

GE

o

Current Turn-On Delay Time

Current Rise Time

t

IGBT and Diode at T = 25 C,

-

d(ON)I

J

I

V

R

= I ,

CE

C110

t

-

rI

= 0.8 BV

= 15V,

,

CES

CE

GE

Current Turn-Off Delay Time

Current Fall Time

t

-

d(OFF)I

= 3Ω,

G

t

-

fI

L = 1mH,

Test Circuit (Figure 19)

Turn-On Energy

E

-

800

900

ON

Turn-Off Energy (Note 3)

E

-

OFF

HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

HGTG30N60B3D, HGT4E30N60B3DS

o

Electrical Specifications

PARAMETER

T

= 25 C, Unless Otherwise Specified (Continued)

C

SYMBOL

TEST CONDITIONS

MIN

TYP

32

MAX

-

UNITS

ns

o

Current Turn-On Delay Time

Current Rise Time

t

IGBT and Diode at T = 150 C,

-

d(ON)I

J

I

= I ,

CE

C110

t

24

-

ns

rI

d(OFF)I

V

= 0.8 BV

= 15V,

,

CES

CE

GE

Current Turn-Off Delay Time

Current Fall Time

t

275

90

320

150

1550

1900

2.5

40

ns

R

= 3Ω,

G

t

ns

fI

L = 1mH,

Test Circuit (Figure 19)

Turn-On Energy

E

1300

1600

1.95

32

µJ

ON

Turn-Off Energy (Note 3)

Diode Forward Voltage

Diode Reverse Recovery Time

E

µJ

OFF

V

I

= 30A

V

EC

t

= 1A, dI /dt = 200A/µs

EC

ns

rr

= 30A, dI /dt = 200A/µs

EC

45

55

ns

o

Thermal Resistance Junction To Case

R

IGBT

-

0.6

1.3

C/W

θJC

o

Diode

-

C/W

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (I

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for

CE

Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

60

50

40

30

20

10

0

225

200

175

150

125

100

75

o

V

= 15V

T

= 150 C, R = 3Ω, V

= 15V, L = 100µH

GE

J

G

50

25

0

100

V

200

300

400

500

600

700

25

50

75

100

125

150

o

, COLLECTOR TO EMITTER VOLTAGE (V)

T

, CASE TEMPERATURE ( C)

CE

C

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

HGTG30N60B3D, HGT4E30N60B3DS

Typical Performance Curves Unless Otherwise Specified (Continued)

20

18

16

14

12

10

500

450

400

350

300

250

o

T

= 150 C, R = 3Ω, L = 1mH,

G

o

J

V

= 360V, R = 3Ω, T = 125 C

G J

CE

100

10

V

= 480V

CE

I

SC

T

V

C

GE

f

= 0.05 / (t

d(OFF)I

+ t

)

MAX1

MAX2

d(ON)I

1

o

15V

75 C 10V

75 C

= (P - P ) / (E

ON

+ E )

OFF

= CONDUCTION DISSIPATION

D

C

t

SC

P

o

C

15V

110 C

110 C 10V

8

6

200

150

(DUTY FACTOR = 50%)

o

R

= 0.6 C/W, SEE NOTES

10

θJC

0.1

5

20

40

60

10

11

12

13

14

15

I

, COLLECTOR TO EMITTER CURRENT (A)

V

, GATE TO EMITTER VOLTAGE (V)

CE

GE

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

350

300

250

200

150

100

50

225

DUTY CYCLE <0.5%, V

PULSE DURATION = 250µs

= 10V

GE

DUTY CYCLE <0.5%, V

GE

PULSE DURATION = 250µs

= 15V

200

175

150

125

100

75

o

T

= -55 C

C

T

o

= 150 C

C

o

T

= -55 C

C

o

T

= 150 C

C

T

= 25 C

C

o

50

T

= 25 C

C

25

0

2

4

6

8

10

0

1

2

3

4

5

6

7

V

, COLLECTOR TO EMITTER VOLTAGE (V)

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

4.5

6

R

= 3Ω, L = 1mH, V

= 480V

o

R

= 3Ω, L = 1mH, V

= 480V

G

CE

G

CE

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

5

4

3

2

1

0

o

T

= 25 C, T = 150 C, V

= 10V

GE

J

o

T

= 150 C, V

= 10V OR 15V

J

GE

o

T

= 25 C, V

= 10V OR 15V

50

J

GE

o

= 25 C, T = 150 C, V = 15V

GE

o

T

J

10

20

30

40

50

60

10

20

30

40

60

I

, COLLECTOR TO EMITTER CURRENT (A)

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

HGTG30N60B3D, HGT4E30N60B3DS

Typical Performance Curves Unless Otherwise Specified (Continued)

250

55

50

45

40

35

30

25

R

= 3Ω, L = 1mH, V

= 480V

o

R

= 3Ω, L = 1mH, V

= 480V

G

CE

G

CE

o

T

= 25 C, T = 150 C, V

= 10V

GE

J

200

150

100

o

T

= 25 C, T = 150 C, V = 15V

GE

J

o

T

= 25 C, T = 150 C, V = 10V

GE

J

50

0

o

T

= 25 C, T = 150 C, V

= 15V

J

GE

10

20

30

40

50

60

10

20

30

40

50

60

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

300

120

R

= 3Ω, L = 1mH,

R

= 3Ω, L = 1mH, V

= 480V

G

CE

V

= 480V

CE

o

250

200

150

100

80

T

= 150 C, V

= 10V AND 15V

GE

J

o

T

= 150 C, V

= 10V, V

= 15V

GE

= 10V, V = 15V

GE

J

GE

o

T

= 25 C, V

J

GE

60

o

= 25 C, V

T

= 10V AND 15V

GE

J

40

10

20

I , COLLECTOR TO EMITTER CURRENT (A)

CE

30

40

50

60

10

20

30

40

50

60

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER

CURRENT

16

300

o

= 1mA, R = 10Ω, T = 25 C

I

g (REF)

L

C

DUTY CYCLE <0.5%, V

= 10V

CE

14

12

10

8

PULSE DURATION = 250µs

250

200

150

100

50

o

T

= -55 C

C

V

= 600V

CE

o

T

= 25 C

C

o

6

T

= 150 C

C

V

= 200V

CE

4

V

= 400V

CE

2

0

50

100

Q , GATE CHARGE (nC)

G

150

200

4

5

6

7

8

9

10

11

V

, GATE TO EMITTER VOLTAGE (V)

GE

FIGURE 13. TRANSFER CHARACTERISTIC

FIGURE 14. GATE CHARGE WAVEFORMS

HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

HGTG30N60B3D, HGT4E30N60B3DS

Typical Performance Curves Unless Otherwise Specified (Continued)

10

FREQUENCY = 1MHz

8

C

IES

6

4

2

0

C

OES

RES

0

5

10

15

20

25

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE

0

10

0.50

0.20

0.10

0.05

-1

10

0.02

0.01

t

1

P

D

DUTY FACTOR, D = t / t

1

2

-2

t

SINGLE PULSE

2

PEAK T = (P X Z

X R ) + T

θJC C

J

D

θJC

-5

10

-4

-3

-2

-1

10

0

1

10

t , RECTANGULAR PULSE DURATION (s)

10

1

FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

50

200

175

150

125

100

75

o

= 25 C, dI /dt = 200A/µs

T

C

EC

40

30

20

10

0

t

rr

o

25 C

t

a

o

100 C

t

b

50

o

-55 C

25

0

1

2

5

10

, FORWARD CURRENT (A)

EC

20

30

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

V

, FORWARD VOLTAGE (V)

I

EC

FIGURE 17. DIODE FORWARD CURRENT vs FORWARD

VOLTAGE DROP

FIGURE 18. RECOVERY TIME vs FORWARD CURRENT

HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

HGTG30N60B3D, HGT4E30N60B3DS

Test Circuit and Waveforms

HGTG30N60B3D

90%

OFF

10%

ON

V

GE

E

L = 1mH

V

CE

R

= 3Ω

G

90%

10%

d(OFF)I

+

-

I

CE

t

rI

V

= 480V

DD

t

fI

t

d(ON)I

FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT

FIGURE 20. SWITCHING TEST WAVEFORMS

Handling Precautions for IGBTs

Operating Frequency Information

Insulated Gate Bipolar Transistors are susceptible to

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating device

performance for a specific application. Other typical

gate-insulation damage by the electrostatic discharge of

energy through the devices. When handling these devices,

care should be exercised to assure that the static charge built

in the handler’s body capacitance is not discharged through

the device. With proper handling and application procedures,

however, IGBTs are currently being extensively used in

production by numerous equipment manufacturers in military,

industrial and consumer applications, with virtually no damage

problems due to electrostatic discharge. IGBTs can be

handled safely if the following basic precautions are taken:

frequency vs collector current (I ) plots are possible using

CE

the information shown for a typical unit in Figures 5, 6, 7, 8, 9

and 11. The operating frequency plot (Figure 3) of a typical

device shows f

or f

; whichever is smaller at each

MAX1

MAX2

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

f

is defined by f

= 0.05/(t ).

+ t

MAX1

d(OFF)I d(ON)I

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting springs

or by the insertion into conductive material such as

“ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers, the

hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from

circuits with power on.

Deadtime (the denominator) has been arbitrarily held to 10%

of the on-state time for a 50% duty factor. Other definitions

are possible. t

and t are defined in Figure 20.

d(OFF)I

d(ON)I

Device turn-off delay can establish an additional frequency

limiting condition for an application other than T . t

JM d(OFF)I

is important when controlling output ripple under a lightly

loaded condition.

f

is defined by f

MAX2

= (P - P )/(E

OFF

+ E ). The

ON

MAX2

allowable dissipation (P ) is defined by P = (T T )/R

JM - C θJC

D

C

.

D

5. Gate VoltageRating - Never exceed the gate-voltagerating

The sum of device switching and conduction losses must not

exceed P . A 50% duty factor was used (Figure 3) and the

of V

. Exceeding the rated V can result in permanent

D

GEM

GE

conduction losses (P ) are approximated by P = (V

x I )/2.

are defined in the switching waveforms

damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are

essentially capacitors. Circuits that leave the gate

open-circuited or floating should be avoided. These

conditions can result in turn-on of the device due to voltage

buildup on the input capacitor due to leakage currents or

pickup.

7. Gate Protection - These devices do not have an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an external Zener is recommended.

C

CE CE

E

and E

OFF

ON

shown in Figure 20. E

is the integral of the instantaneous

ON

x V ) during turn-on and E

power loss (I

CE

is the

CE

integral of the instantaneous power loss (I

OFF

x V ) during

CE

turn-off. All tail losses are included in the calculation for

; i.e., the collector current equals zero (I = 0).

E

OFF

CE

HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

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not intended to be an exhaustive list of all such trademarks.

â

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LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

电子百科

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