HIP6603BCB原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

当前位置：IC37首页_>H字母起始型号索引_>H字母起始型号索引第345页更新时间：2024-12-04 17:30:16

产品型号HIP6603BCB的概述

芯片HIP6603BCB的概述 HIP6603BCB是一种高效的驱动器芯片，主要用于电流控制和电源管理场合。作为一款优化设计的产品，HIP6603BCB结合了多种先进技术，能够在精确调控电流及电压的同时，保持较高的能效，广泛应用于电机驱动、开关电源和LED照明等领域。该芯片的设计充分考虑了功率转换效率和热管理能力，使其在高负载条件下依然可以稳定运行。芯片HIP6603BCB的详细参数 HIP6603BCB芯片的电气参数表现出色，其主要规格包括： - 输入电压范围：5V到15V - 输出电流：最大可支持到3A - 开关频率：在500kHz以上可调 - 工作温度范围：-40°C至+125°C - 静态电流：典型值为15mA - 效率：在负载条件下可达90% 由于其出色的性能，HIP6603BCB适合用于多种功率密集型应用，能够满足高频域和高效率的需求。芯片HIP6603BCB的厂家、...

产品型号HIP6603BCB的Datasheet PDF文件预览

HIP6601B, HIP6603B, HIP6604B

Data Sheet

J uly 20, 2005

FN9072.7

Synchronous Rectified Buck

MOSFET Drivers

Features

• Drives Two N-Channel MOSFETs

• Adaptive Shoot-Through Protection

• Internal Bootstrap Device

The HIP6601B, HIP6603B and HIP6604B are high-

frequency, dual MOSFET drivers specifically designed to

drive two power N-Channel MOSFETs in a synchronous

rectified buck converter topology. These drivers combined

with a HIP63xx or the ISL65xx series of Multi-Phase Buck

PWM controllers and MOSFETs form a complete core-

voltage regulator solution for advanced microprocessors.

• Supports High Switching Frequency

- Fast Output Rise Time

- Propagation Delay 30ns

• Small 8 LD SOIC and EPSOIC and 16 LD QFN Packages

• Dual Gate-Drive Voltages for Optimal Efficiency

• Three-State Input for Output Stage Shutdown

• Supply Undervoltage Protection

The HIP6601B drives the lower gate in a synchronous

rectifier to 12V, while the upper gate can be independently

driven over a range from 5V to 12V. The HIP6603B drives

both upper and lower gates over a range of 5V to 12V. This

drive-voltage flexibility provides the advantage of optimizing

applications involving trade-offs between switching losses

and conduction losses. The HIP6604B can be configured as

either a HIP6601B or a HIP6603B.

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat

No Leads—Product Outline.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile.

The output drivers in the HIP6601B, HIP6603B and

HIP6604B have the capacity to efficiently switch power

MOSFETs at frequencies up to 2MHz. Each driver is

capable of driving a 3000pF load with a 30ns propagation

delay and 50ns transition time. These products implement

bootstrapping on the upper gate with only an external

capacitor required. This reduces implementation complexity

and allows the use of higher performance, cost effective,

N-Channel MOSFETs. Adaptive shoot-through protection is

integrated to prevent both MOSFETs from conducting

simultaneously.

Applications

• Core Voltage Supplies for Intel Pentium® III, AMD®

Athlon™ Microprocessors

• High Frequency Low Profile DC-DC Converters

• High Current Low Voltage DC-DC Converters

Related Literature

• Technical Brief TB363, Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

HIP6601B, HIP6603B, HIP6604B

HIP6601BCB, HIP6603BCB (SOIC)

HIP6601ECB, HIP6603ECB (EPSOIC)

Ordering Information

TOP VIEW

TEMP. RANGE

(°C)

PKG.

DWG. #

PART NUMBER

HIP6601BCB

PACKAGE

UGATE

BOOT

PWM

PHASE

PVCC

VCC

0 to 85

8 Ld SOIC

M8.15

HIP6601BCB-T

HIP6601BECB

HIP6601BECB-T

HIP6603BCB

8 Ld SOIC Tape and Reel

0 to 85 8 Ld EPSOIC M8.15B

8 Ld EPSOIC Tape and Reel

0 to 85 8 Ld SOIC

8 Ld SOIC Tape and Reel

0 to 85 8 Ld EPSOIC M8.15B

8 Ld EPSOIC Tape and Reel

GND

LGATE

M8.15

HIP6604B (QFN)

HIP6603BCB-T

HIP6603BECB

HIP6603BECB-T

HIP6604BCR

TOP VIEW

16 15 14 13

0 to 85

16 Ld 4x4 QFN L16.4x4

HIP6604BCR-T

16 Ld 4x4 QFN Tape and Reel

BOOT

PWM

GND

12 NC

11 PVCC

10 LVCC

VCC

Pinouts

Block Diagrams

HIP6601B AND HIP6603B

PVCC

VCC

BOOT

UGATE

PHASE

† VCC FOR HIP6601B

+5V

PVCC FOR HIP6603B

SHOOT-

THROUGH

PROTECTION

10K

PWM

CONTROL

LOGIC

†

LGATE

GND

FOR HIP6601ECB AND HIP6603ECB DEVICES, THE PAD ON THE BOTTOM

SIDE OF THE PACKAGE MUST BE SOLDERED TO THE PC BOARD.

PAD

HIP6604B QFN PACKAGE

PVCC

VCC

BOOT

UGATE

+5V

PHASE

SHOOT-

THROUGH

10K

CONNECT LVCC TO VCC FOR HIP6601B CONFIGURATION

CONNECT LVCC TO PVCC FOR HIP6603B CONFIGURATION.

PROTECTION

PWM

GND

LVCC

CONTROL

LOGIC

LGATE

10K

PGND

PAD

PAD ON THE BOTTOM SIDE OF THE PACKAGE MUST BE SOLDERED TO THE PC BOARD

FN9072.7

July 20, 2005

HIP6601B, HIP6603B, HIP6604B

Typical Application: 3-Channel Converter Using HIP6301 and HIP6601B Gate Drivers

+12V

+5V

BOOT

PVCC

UGATE

PHASE

VCC

DRIVE

HIP6601B

PWM

LGATE

+12V

+5V

CORE

BOOT

VFB

COMP

PWM1

PVCC

UGATE

PHASE

VCC

VSEN

PWM

DRIVE

HIP6601B

PWM2

PWM3

PGOOD

LGATE

MAIN

CONTROL

HIP6301

VID

ISEN1

ISEN2

ISEN3

+12V

GND

+5V

BOOT

PVCC

UGATE

PHASE

VCC

DRIVE

HIP6601B

PWM

LGATE

FN9072.7

July 20, 2005

HIP6601B, HIP6603B, HIP6604B

Absolute Maximum Ratings

Thermal Information

Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V

Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V

Thermal Resistance

(°C/W)

SOIC Package (Note 1) . . . . . . . . . . . .

EPSOIC Package (Note 2). . . . . . . . . .

QFN Package (Note 2). . . . . . . . . . . . .

Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C

Maximum Storage Temperature Range . . . . . . . . . .-65°C to 150°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C

(SOIC - Lead Tips Only)

N/A

BOOT Voltage (V

- V

) . . . . . . . . . . . . . . . . . . . . . . .15V

BOOT

) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V

PHASE

Input Voltage (V

UGATE. . . . . . .V

PWM

- 5V(<400ns pulse width) to V

+ 0.3V

PHASE

BOOT

PVCC

. . . . . . . . . . . .V

-0.3V(>400ns pulse width) to V

PHASE

LGATE . . . . . . . . . GND - 5V(<400ns pulse width) to V

. . . . . . . . . . . . . . GND -0.3V(>400ns pulse width) to V

PHASE. . . . . . . . . . . . . . . . . . GND -5V(<400ns pulse width) to 15V

. . . . . . . . . . . . . . . . . . . . . . .GND -0.3V(>400ns pulse width) to 15V

ESD Rating

Human Body Model (Per MIL-STD-883 Method 3015.7) . . . . .3kV

Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . .200V

For Recommended soldering conditions see Tech Brief TB389.

Operating Conditions

Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . 0°C to 85°C

Maximum Operating Junction Temperature . . . . . . . . . . . . . 125°C

Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V ±10%

Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. θ is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

2. θ is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. θ

the

JC,

“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.

Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted

PARAMETER

VCC SUPPLY CURRENT

Bias Supply Current

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

HIP6601B, f

HIP6603B, f

HIP6601B, f

HIP6603B, f

= 1MHz, V

= 12V

4.4

2.5

200

1.8

6.2

3.6

430

3.3

µA

VCC

PWM

PVCC

Upper Gate Bias Current

PVCC

POWER-ON RESET

VCC Rising Threshold

VCC Falling Threshold

PWM INPUT

9.7

7.3

9.95

7.6

10.4

8.0

Input Current

= 0V or 5V (See Block Diagram)

500

3.6

1.45

µA

PWM

PWM Rising Threshold

PWM Falling Threshold

UGATE Rise Time

= 12V, 3nF Load

RUGATE

PVCC

LGATE Rise Time

RLGATE

UGATE Fall Time

FUGATE

LGATE Fall Time

FLGATE

UGATE Turn-Off Propagation Delay

LGATE Turn-Off Propagation Delay

Shutdown Window

PDLUGATE

PDLLGATE

1.4

3.6

Shutdown Holdoff Time

OUTPUT

230

Upper Drive Source Impedance

= 5V

1.7

3.0

2.3

1.1

580

730

3.0

5.0

4.0

2.0

Ω

UGATE

LGATE

PVCC

= 12V

= 5V

Upper Drive Sink Impedance

Lower Drive Source Current

Ω

= 12V

= 5V

Ω

400

500

Ω

= 12V

= 5V

Equivalent Drive Source Impedance

Lower Drive Sink Impedance

LGATE

= 5V or 12V

1.6

4.0

Ω

LGATE

PVCC

FN9072.7

July 20, 2005

HIP6601B, HIP6603B, HIP6604B

Lower gate driver supply voltage.

Functional Pin Des cription

PVCC (Pin 7), (Pin 11 QFN)

UGATE (Pin 1), (Pin 16 QFN)

For the HIP6601B and the HIP6604B, this pin supplies the

upper gate drive bias. Connect this pin from +12V down to +5V.

Upper gate drive output. Connect to gate of high-side power

N-Channel MOSFET.

For the HIP6603B, this pin supplies both the upper and

lower gate drive bias. Connect this pin to either +12V or +5V.

BOOT (Pin 2), (Pin 2 QFN)

Floating bootstrap supply pin for the upper gate drive.

Connect a bootstrap capacitor between this pin and the

PHASE pin. The bootstrap capacitor provides the charge to

turn on the upper MOSFET. A resistor in series with boot

capacitor is required in certain applications to reduce ringing

on the BOOT pin. See the Internal Bootstrap Device section

under DESCRIPTION for guidance in choosing the

appropriate capacitor and resistor values.

PHASE (Pin 8), (Pin 14 QFN)

Connect this pin to the source of the upper MOSFET and the

drain of the lower MOSFET. The PHASE voltage is

monitored for adaptive shoot-through protection. This pin

also provides a return path for the upper gate drive.

Des cription

PWM (Pin 3), (Pin 3 QFN)

Operation

The PWM signal is the control input for the driver. The PWM

signal can enter three distinct states during operation, see the

three-state PWM Input section under DESCRIPTION for further

details. Connect this pin to the PWM output of the controller.

Designed for versatility and speed, the HIP6601B, HIP6603B

and HIP6604B dual MOSFET drivers control both high-side

and low-side N-Channel FETs from one externally provided

PWM signal.

GND (Pin 4), (Pin 4 QFN)

The upper and lower gates are held low until the driver is

initialized. Once the VCC voltage surpasses the VCC Rising

Threshold (See Electrical Specifications), the PWM signal

takes control of gate transitions. A rising edge on PWM

initiates the turn-off of the lower MOSFET (see Timing

Bias and reference ground. All signals are referenced to

this node.

PGND (Pin 5 QFN Package Only)

This pin is the power ground return for the lower gate driver.

Diagram). After a short propagation delay [t

], the

PDLLGATE

lower gate begins to fall. Typical fall times [t

provided in the Electrical Specifications section. Adaptive

shoot-through circuitry monitors the LGATE voltage and

] are

FLGATE

LGATE (Pin 5), (Pin 7 QFN)

Lower gate drive output. Connect to gate of the low-side

power N-Channel MOSFET.

determines the upper gate delay time [t

] based

PDHUGATE

on how quickly the LGATE voltage drops below 2.2V. This

prevents both the lower and upper MOSFETs from

conducting simultaneously or shoot-through. Once this delay

period is complete the upper gate drive begins to rise

VCC (Pin 6), (Pin 9 QFN)

Connect this pin to a +12V bias supply. Place a high quality

bypass capacitor from this pin to GND.

LVCC (Pin 10 QFN Package Only)

] and the upper MOSFET turns on.

RUGATE

Timing Diagram

PWM

PDHUGATE

PDLUGATE

RUGATE

FUGATE

UGATE

LGATE

RLGATE

FLGATE

PDHLGATE

PDLLGATE

FN9072.7

July 20, 2005

HIP6601B, HIP6603B, HIP6604B

A falling transition on PWM indicates the turn-off of the upper

MOSFET and the turn-on of the lower MOSFET. A short

propagation delay [t ] is encountered before the

The bootstrap capacitor must have a maximum voltage

rating above VCC + 5V. The bootstrap capacitor can be

chosen from the following equation:

PDLUGATE

upper gate begins to fall [t

]. Again, the adaptive

FUGATE

shoot-through circuitry determines the lower gate delay time,

. The PHASE voltage is monitored and the lower

GATE

-----------------------

≥

BOOT

∆V

BOOT

PDHLGATE

gate is allowed to rise after PHASE drops below 0.5V. The

Where Q

GATE

charge the gate of the upper MOSFET. The ∆V

defined as the allowable droop in the rail of the upper drive.

is the amount of gate charge required to fully

term is

lower gate then rises [t ], turning on the lower

RLGATE

BOOT

MOSFET.

Three-State PWM Input

As an example, suppose a HUF76139 is chosen as the

A unique feature of the HIP660X drivers is the addition of a

shutdown window to the PWM input. If the PWM signal

enters and remains within the shutdown window for a set

holdoff time, the output drivers are disabled and both

MOSFET gates are pulled and held low. The shutdown state

is removed when the PWM signal moves outside the

shutdown window. Otherwise, the PWM rising and falling

thresholds outlined in the Electrical Specifications determine

when the lower and upper gates are enabled.

upper MOSFET. The gate charge, Q

GATE

, from the data

sheet is 65nC for a 10V upper gate drive. We will assume a

200mV droop in drive voltage over the PWM cycle. We find

that a bootstrap capacitance of at least 0.325µF is required.

The next larger standard value capacitance is 0.33µF.

In applications which require down conversion from +12V or

higher and PVCC is connected to a +12V source, a boot

resistor in series with the boot capacitor is required. The

increased power density of these designs tend to lead to

increased ringing on the BOOT and PHASE nodes, due to

faster switching of larger currents across given circuit

parasitic elements. The addition of the boot resistor allows

for tuning of the circuit until the peak ringing on BOOT is

below 29V from BOOT to GND and 17V from BOOT to VCC.

A boot resistor value of 5Ω typically meets this criteria.

Adaptive Shoot-Through Protection

Both drivers incorporate adaptive shoot-through protection

to prevent upper and lower MOSFETs from conducting

simultaneously and shorting the input supply. This is

accomplished by ensuring the falling gate has turned off one

MOSFET before the other is allowed to rise.

During turn-off of the lower MOSFET, the LGATE voltage is

monitored until it reaches a 2.2V threshold, at which time the

UGATE is released to rise. Adaptive shoot-through circuitry

monitors the PHASE voltage during UGATE turn-off. Once

PHASE has dropped below a threshold of 0.5V, the LGATE

is allowed to rise. PHASE continues to be monitored during

the lower gate rise time. If PHASE has not dropped below

0.5V within 250ns, LGATE is taken high to keep the

bootstrap capacitor charged. If the PHASE voltage exceeds

the 0.5V threshold during this period and remains high for

longer than 2µs, the LGATE transitions low. Both upper and

lower gates are then held low until the next rising edge of the

PWM signal.

In some applications, a well tuned boot resistor reduces the

ringing on the BOOT pin, but the PHASE to GND peak

ringing exceeds 17V. A gate resistor placed in the UGATE

trace between the controller and upper MOSFET gate is

recommended to reduce the ringing on the PHASE node by

slowing down the upper MOSFET turn-on. A gate resistor

value between 2Ω to 10Ω typically reduces the PHASE to

GND peak ringing below 17V.

Gate Drive Voltage Vers atility

The HIP6601B and HIP6603B provide the user total

flexibility in choosing the gate drive voltage. The HIP6601B

lower gate drive is fixed to VCC [+12V], but the upper drive

rail can range from 12V down to 5V depending on what

voltage is applied to PVCC. The HIP6603B ties the upper

and lower drive rails together. Simply applying a voltage

from 5V up to 12V on PVCC will set both driver rail voltages.

Power-On Res et (POR) Function

During initial start-up, the VCC voltage rise is monitored and

gate drives are held low until a typical VCC rising threshold

of 9.95V is reached. Once the rising VCC threshold is

exceeded, the PWM input signal takes control of the gate

drives. If VCC drops below a typical VCC falling threshold of

7.6V during operation, then both gate drives are again held

low. This condition persists until the VCC voltage exceeds

the VCC rising threshold.

Power Dis s ipation

Package power dissipation is mainly a function of the

switching frequency and total gate charge of the selected

MOSFETs. Calculating the power dissipation in the driver for

a desired application is critical to ensuring safe operation.

Exceeding the maximum allowable power dissipation level

will push the IC beyond the maximum recommended

operating junction temperature of 125°C. The maximum

allowable IC power dissipation for the SO8 package is

approximately 800mW. When designing the driver into an

application, it is recommended that the following calculation

Internal Boots trap Device

The HIP6601B, HIP6603B, and HIP6604B drivers all feature

an internal bootstrap device. Simply adding an external

capacitor across the BOOT and PHASE pins completes the

bootstrap circuit.

FN9072.7

July 20, 2005

HIP6601B, HIP6603B, HIP6604B

be performed to ensure safe operation at the desired

frequency for the selected MOSFETs. The power dissipated

by the driver is approximated as:

Tes t Circuit

+5V OR +12V

0.01µF

+12V







P = 1.05f

V Q + V Q + I

VCC

DDQ

BOOT



PVCC

2N7002

0.15µF

UGATE

where f is the switching frequency of the PWM signal. V

PHASE

VCC

and V represent the upper and lower gate rail voltage. Q

and Q is the upper and lower gate charge determined by

MOSFET selection and any external capacitance added to

LGATE

0.15µF

PWM

100kΩ

2N7002

the gate pins. The I product is the quiescent power

of the driver and is typically 30mW.

DDQ CC

GND

The power dissipation approximation is a result of power

transferred to and from the upper and lower gates. But, the

internal bootstrap device also dissipates power on-chip

during the refresh cycle. Expressing this power in terms of

the upper MOSFET total gate charge is explained below.

1000

= C = 3nF

800

600

400

200

The bootstrap device conducts when the lower MOSFET or

its body diode conducts and pulls the PHASE node toward

GND. While the bootstrap device conducts, a current path is

formed that refreshes the bootstrap capacitor. Since the

upper gate is driving a MOSFET, the charge removed from

the bootstrap capacitor is equivalent to the total gate charge

of the MOSFET. Therefore, the refresh power required by

the bootstrap capacitor is equivalent to the power used to

charge the gate capacitance of the MOSFET.

= C = 2nF

= C = 1nF

= C = 4nF

= C = 5nF

VCC = PVCC = 12V

500

1000

1500

2000

FREQUENCY (kHz)

FIGURE 1. POWER DISSIPATION vs FREQUENCY

Q V

REFRESH

LOSS

PVCC

1000

VCC = PVCC = 12V

where Q

is the total charge removed from the bootstrap

= 3nF

= 0nF

LOSS

capacitor and provided to the upper gate load.

800

600

400

200

The 1.05 factor is a correction factor derived from the

following characterization. The base circuit for characterizing

the drivers for different loading profiles and frequencies is

provided. C and C are the upper and lower gate load

capacitors. Decoupling capacitors [0.15µF] are added to the

PVCC and VCC pins. The bootstrap capacitor value is

0.01µF.

= C = 3nF

= 0nF

= 3nF

In Figure 1, C and C values are the same and frequency

is varied from 50kHz to 2MHz. PVCC and VCC are tied

together to a +12V supply. Curves do exceed the 800mW

cutoff, but continuous operation above this point is not

recommended.

500

1000

FREQUENCY (kHz)

1500

2000

FIGURE 2. 3nF LOADING PROFILE

The impact of loading on power dissipation is shown in

Figure 3. Frequency is held constant while the gate capacitors

are varied from 1nF to 5nF. VCC and PVCC are tied together

and to a +12V supply. Figures 4, 5 and 6 show the same

characterization for the HIP6603B with a +5V supply on PVCC

and VCC tied to a +12V supply.

Figure 2 shows the dissipation in the driver with 3nF loading

on both gates and each individually. Note the higher upper

gate power dissipation which is due to the bootstrap device

refresh cycle. Again PVCC and VCC are tied together and to

a +12V supply.

Since both upper and lower gate capacitance can vary,

Figure 8 shows dissipation curves versus lower gate

capacitance with upper gate capacitance held constant at three

different values. These curves apply only to the HIP6601B due

to power supply configuration.

FN9072.7

July 20, 2005

HIP6601B, HIP6603B, HIP6604B

Typical Performance Curves

400

1000

VCC = PVCC = 12V

VCC = 12V, PVCC = 5V

FREQUENCY

= 1MHz

800

600

400

200

300

200

100

= C = 5nF

FREQUENCY = 500kHz

FREQUENCY = 200kHz

= C = 4nF

= C = 3nF

= C = 2nF

= C = 1nF

1.0

2.0

3.0

4.0

5.0

500

1000

1500

2000

GATE CAPACITANCE (C = C ) (nF)

FREQUENCY (kHz)

FIGURE 4. POWER DISSIPATION vs FREQUENCY (HIP6603B)

FIGURE 3. POWER DISSIPATION vs LOADING

400

VCC = 12V, PVCC = 5V

300

200

100

= C = 3nF

FREQUENCY = 1MHz

200

= 3nF

= 0nF

FREQUENCY = 500kHz

100

= 0nF

= 3nF

FREQUENCY = 200kHz

1.0

2.0

3.0

4.0

5.0

500

1000

FREQUENCY (kHz)

1500

2000

GATE CAPACITANCE = (C = C ) (nF)

FIGURE 5. 3nF LOADING PROFILE (HIP6603B)

FIGURE 6. VARIABLE LOADING PROFILE (HIP6603B)

1000

800

600

400

200

500

VCC = 12V, PVCC = 5V

FREQUENCY = 1MHz

= 5nF

= 3nF

FREQUENCY = 500kHz

400

300

200

100

FREQUENCY = 500kHz

= 1nF

FREQUENCY = 200kHz

1.0

2.0

3.0

4.0

5.0

1.0

2.0

3.0

4.0

5.0

LOWER GATE CAPACITANCE (C ) (nF)

GATE CAPACITANCE (C = C ) (nF)

FIGURE 8. POWER DISSIPATION vs LOWER GATE

FIGURE 7. POWER DISSIPATION vs FREQUENCY (HIP6601B)

CAPACITANCE FOR FIXED VALUES OF UPPER

GATE CAPACITANCE

FN9072.7

July 20, 2005

HIP6601B, HIP6603B, HIP6604B

Small Outline Exposed Pad Plastic Packages (EPSOIC)

M8.15B

8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD

INDEX

AREA

0.25(0.010)

B M

PLASTIC PACKAGE

INCHES

SYMBOL

MILLIMETERS

-B-

MIN

MAX

MIN

1.43

0.03

0.35

0.19

4.80

3.31

MAX

1.68

0.13

0.49

0.25

4.98

3.39

NOTES

0.056

0.001

0.0138

0.0075

0.189

0.150

0.066

0.005

0.0192

0.0098

0.196

0.157

TOP VIEW

SEATING PLANE

-A-

0.050 BSC

1.27 BSC

h x 45

0.230

0.010

0.016

0.244

0.016

0.035

5.84

0.25

0.41

6.20

0.41

0.64

-C-

0.10(0.004)

0°

8°

0°

8°

0.25(0.010) M

SIDE VIEW

C A M B S

0.094

2.387

Rev. 3 6/05

NOTES:

1. Symbols are defined in the “MO Series Symbol List” in Section

2.2 of Publication Number 95.

2. Dimensioning and tolerancing per ANSI Y14.5M-1982.

3. Dimension “D” does not include mold flash, protrusions or gate

burrs. Mold flash, protrusion and gate burrs shall not exceed

0.15mm (0.006 inch) per side.

4. Dimension “E” does not include interlead flash or protrusions.

Interlead flash and protrusions shall not exceed 0.25mm (0.010

inch) per side.

BOTTOM VIEW

5. The chamfer on the body is optional. If it is not present, a visual

index feature must be located within the crosshatched area.

6. “L” is the length of terminal for soldering to a substrate.

7. “N” is the number of terminal positions.

8. Terminal numbers are shown for reference only.

9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater

above the seating plane, shall not exceed a maximum value of

0.61mm (0.024 inch).

10. Controlling dimension: MILLIMETER. Converted inch

dimensions are not necessarily exact.

11. Dimensions “P” and “P1” are thermal and/or electrical enhanced

variations. Values shown are maximum size of exposed pad

within lead count and body size.

FN9072.7

July 20, 2005

HIP6601B, HIP6603B, HIP6604B

Quad Flat No-Lead Plas tic Package (QFN)

L16.4x4

16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE

(COMPLIANT TO JEDEC MO-220-VGGC ISSUE C)

Micro Lead Frame Plas tic Package (MLFP)

MILLIMETERS

SYMBOL

MIN

NOMINAL

MAX

1.00

0.05

1.00

NOTES

0.80

0.90

0.20 REF

0.23

1.95

0.28

0.35

2.25

5, 8

4.00 BSC

3.75 BSC

2.10

7, 8

4.00 BSC

3.75 BSC

2.10

7, 8

0.65 BSC

0.25

0.50

0.60

0.75

0.15

0.60

Rev. 5 5/04

NOTES:

1. Dimensioning and tolerancing conform to ASME Y14.5-1994.

2. N is the number of terminals.

3. Nd and Ne refer to the number of terminals on each D and E.

4. All dimensions are in millimeters. Angles are in degrees.

5. Dimension b applies to the metallized terminal and is measured

between 0.15mm and 0.30mm from the terminal tip.

6. The configuration of the pin #1 identifier is optional, but must be

located within the zone indicated. The pin #1 identifier may be

either a mold or mark feature.

7. Dimensions D2 and E2 are for the exposed pads which provide

improved electrical and thermal performance.

8. Nominal dimensionsare provided toassistwith PCBLandPattern

Design efforts, see Intersil Technical Brief TB389.

9. Features and dimensions A2, A3, D1, E1, P & θ are present when

Anvil singulation method is used and not present for saw

singulation.

10. Depending on the method of lead termination at the edge of the

package, a maximum 0.15mm pull back (L1) maybe present. L

minus L1 to be equal to or greater than 0.3mm.

FN9072.7

July 20, 2005

HIP6601B, HIP6603B, HIP6604B

Small Outline Plastic Packages (SOIC)

M8.15 (JEDEC MS-012-AA ISSUE C)

8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE

INDEX

0.25(0.010)

B M

AREA

INCHES MILLIMETERS

SYMBOL

MIN

MAX

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

NOTES

-B-

0.0532

0.0040

0.013

0.0688

0.0098

0.020

SEATING PLANE

0.0075

0.1890

0.1497

0.0098

0.1968

0.1574

-A-

h x 45°

-C-

0.050 BSC

1.27 BSC

0.2284

0.0099

0.016

0.2440

0.0196

0.050

5.80

0.25

0.40

6.20

0.50

1.27

0.10(0.004)

0.25(0.010) M

A M B S

NOTES:

0°

8°

0°

8°

1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of

Rev. 1 6/05

Publication Number 95.

2. Dimensioning and tolerancing per ANSI Y14.5M-1982.

3. Dimension “D” does not include mold flash, protrusions or gate burrs.

Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006

inch) per side.

4. Dimension “E” does not include interlead flash or protrusions. Inter-

lead flash and protrusions shall not exceed 0.25mm (0.010 inch) per

side.

5. The chamfer on the body is optional. If it is not present, a visual index

feature must be located within the crosshatched area.

6. “L” is the length of terminal for soldering to a substrate.

7. “N” is the number of terminal positions.

8. Terminal numbers are shown for reference only.

9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater

above the seating plane, shall not exceed a maximum value of

0.61mm (0.024 inch).

10. Controlling dimension: MILLIMETER. Converted inch dimensions

are not necessarily exact.

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN9072.7

July 20, 2005

HIP6603BCB相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

HIP6603BCB产品参数

型号:	HIP6603BCB
是否无铅：	含铅
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS INC
零件包装代码：	SOIC
包装说明：	SOP,
针数：	8
Reach Compliance Code：	unknown
风险等级：	5.72
高边驱动器：	YES
接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0
长度：	4.9 mm
湿度敏感等级：	1
功能数量：	1
端子数量：	8
最高工作温度：	85 °C
最低工作温度：
标称输出峰值电流：	0.73 A
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	240
认证状态：	COMMERCIAL
座面最大高度：	1.75 mm
最大供电电压：	13.2 V
最小供电电压：	10.8 V
标称供电电压：	12 V
电源电压1-最大：	12 V
电源电压1-分钟：	5 V
表面贴装：	YES
温度等级：	OTHER
端子面层：	TIN LEAD
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	3.9 mm
Base Number Matches：	1

电子百科

产品导航

产品型号HIP6603BCB的概述

产品型号HIP6603BCB的Datasheet PDF文件预览

HIP6603BCB相关产品

HIP6603BCB相关文章

IC37:专业IC行业平台