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产品型号HN2S03FE的Datasheet PDF文件预览

HN2S03FE  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
HN2S03FE  
Unit: mm  
High Speed Switching Applications  
z
z
z
z
HN2S03FE is composed of 3 independent diodes.  
Low forward voltage  
Low reverse current  
Small total capacitance  
: V  
= 0.50V (typ.)  
F (3)  
: I = 0.5μA (max)  
R
: C = 3.9pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse Voltage  
Reverse voltage  
V
25  
20  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
100 *  
50 *  
mA  
mA  
A
FM  
1.ANODE(A1)  
I
O
2.ANODE(A2)  
3.ANODE(A3)  
I
1 *  
FSM  
P
4.CATHODE(C3)  
5.CATHODE(C2)  
6.CATHODE(C1)  
Power dissipation  
100 **  
125  
mW  
°C  
°C  
Junction temperature  
T
j
JEDEC  
Storage temperature range  
T
55125  
stg  
JEITA  
TOSHIBA  
1-2X1C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.003g (Typ.)  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* : This is the absolute maximum rating for a single diode (Q1, Q2 or Q3).  
If two or three diodes are used, the absolute maximum rating  
per diode is 75 % that of the single diode.  
** :Total rating  
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.33  
0.38  
0.50  
F (1)  
F (2)  
F (3)  
F
F
F
Forward voltage  
= 5mA  
= 50mA  
= 20V  
0.55  
0.5  
Reverse current  
I
V
V
μA  
R
R
Total capacitance  
C
= 0, f = 1MH  
z
3.9  
T
R
pF  
1
2007-11-01  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
HN2S03FE  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
nly No  
geich  
mpof  
ucHS  
mons  
tases  
e l
Pin Assignment (Top View)  
Marking  
P * Ta  
C
5
4
6
Q3  
Q2  
Q1  
1
2
3
*:Total Rating  
2
1  
HN2S03FE  
3
2007-11-01  
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