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产品型号HSMP-3800的Datasheet PDF文件预览

Surface Mount PIN Diodes  
Technical Data  
HSMP-38XX and  
HSMP-48XX Series  
required. The HSMP-48XX series  
Features  
Package Lead Code  
Identification  
are special products featuring  
ultra low parasitic inductance in  
the SOT-23 package, specifically  
designed for use at frequencies  
which are much higher than the  
upper limit for conventional  
SOT-23 PIN diodes. The  
HSMP-4810 diode is a low distor-  
tion attenuating PIN designed for  
operation to 3 GHz. The  
HSMP-4820 diode is ideal for  
limiting and low inductance  
switching applications up to  
1.5 GHz. The HSMP-4890 is  
optimized for low current switch-  
ing applications up to 3 GHz.  
• Diodes Optimized for:  
Low Current Switching  
Low Distortion Attenuating  
Ultra-Low Distortion  
Switching  
SINGLE  
Microwave Frequency  
Operation  
#0  
COMMON  
ANODE  
SERIES  
#2  
• Surface Mount SOT-23 and  
SOT-143 Packages  
Single and Dual Versions  
Tape and Reel Options  
Available  
#3  
COMMON  
CATHODE  
UNCONNECTED  
PAIR  
• Low Failure in Time ( FIT)  
Rate[1]  
Note:  
#5  
#4  
1. For more information see the  
Surface Mount PIN Reliability Data  
Sheet.  
The HSMP-386X series of general  
purpose PIN diodes are designed  
for two classes of applications.  
The first is attenuators where  
current consumption is the most  
important design consideration.  
The second application for this  
series of diodes is in switches  
where low cost is the driving  
issue for the designer.  
DUAL ANODE  
DUAL CATHODE  
Description/Applications  
The HSMP-380X and HSMP-381X  
series are specifically designed for  
low distortion attenuator applica-  
tions. The HSMP-382X series is  
optimized for switching applica-  
tions where ultra-low resistance is  
required. The HSMP-3880 switch-  
ing diode is an ultra low distortion  
device optimized for higher power  
applications from 50 MHz to  
#A  
#B  
attenuators, the HSMP-380X or  
-381X series are recommended.  
For high performance switching  
applications, the HSMP-389X  
series is recommended.  
The HSMP-386X series Total  
Capacitance (CT) and Total  
Resistance (RT) are typical  
specifications. For applications  
that require guaranteed perfor-  
mance, the general purpose  
HSMP-383X series is recom-  
mended. For low distortion  
A SPICE model is not available  
for PIN diodes as SPICE does not  
provide for a key PIN diode  
1.5 GHz. The HSMP-389X series is  
optimized for switching applica-  
tions where low resistance at low  
current and low capacitance are  
characteristic, carrier lifetime.  
2
Absolute Maximum Ratings[1] TA = 25°C  
Symbol  
Parameter  
Units Absolute Maximum  
If  
Pt  
Forward Current (1 ms Pulse)  
Total Device Dissipation  
Peak Inverse Voltage  
Junction Temperature  
Storage Temperature  
Amp  
mW[2]  
1
250  
Piv  
Tj  
Same as V  
BR  
°C  
150  
TSTG  
°C  
-65 to 150  
Notes:  
1. Operation in excess of any one of these conditions may result in permanent damage to  
this device.  
2. CW Power Dissipation at TLEAD = 25°C. Derate to zero at maximum rated temperature.  
PIN Attenuator Diodes  
Electrical Specifications TA = 25°C ( Each Diode)  
Nearest  
Equivalent Minimum  
Axial Lead Breakdown  
Maximum  
Series  
Maximum  
Total  
Minimum Maximum  
High Low  
Part  
Package  
Code[1] Code Configuration  
Number Marking Lead  
HSMP-  
Part No.  
5082-  
Voltage  
VBR ( V)  
Resistance Capacitance Resistance Resistance  
RS ()  
CT ( pF)  
RH ()  
RL ( )  
3800  
3802  
3804  
D0  
D2  
D4  
0
2
4
Single  
Series  
3080  
100  
2.0  
0.37  
1000  
8
Common Cathode  
3810  
3812  
3813  
3814  
E0  
E2  
E3  
E4  
0
2
3
4
Single  
3081  
100  
3.0  
0.35  
1500  
10  
Series  
Common Anode  
Common Cathode  
Test Conditions  
VR = VBR  
Measure  
IF = 100 mA  
f = 100 MHz  
VR = 50 V  
f = 1 MHz  
IF = 0.01 mA IF = 20 mA  
f = 100 MHz f= 100 MHz  
IR 10 µA  
PIN Switching Diodes  
Electrical Specifications TA = 25°C  
Nearest  
Maximum  
Equivalent  
Minimum  
Maximum  
Maximum  
Shunt Mode  
Part  
Package  
Code[1] Code Configuration  
Axial Lead Breakdown  
Series  
Resistance  
RS ( )  
Total  
Capacitance  
CT ( pF)  
Harmonic  
Distortion  
Hmd ( dBc)  
Number Marking Lead  
HSMP-  
Part No.  
Voltage  
5082-  
VBR ( V)  
3820  
3822  
3823  
3824  
F0  
F2  
F3  
F4  
0
2
3
4
Single  
3188  
50  
0.6*  
0.8*  
Series  
Common Anode  
Common Cathode  
3880  
S0  
0
Single  
100  
100  
6.5  
2.5  
0.40  
–55  
3890  
3892  
3893  
3894  
3895  
G0  
G2  
G3  
G4  
G5  
0
2
3
4
5
Single  
Series  
0.30**  
Common Anode  
Common Cathode  
Unconnected Pair  
Test Conditions  
VR = VBR  
Measure  
IR 10 µA  
IF = 5 mA  
f = 100 MHz  
IF = 10 mA*  
VR = 50 V  
f = 1 MHz  
VR = 20 V*  
VR = 5 V**  
2 fo, Zo = 50 W  
fo = 400 MHz  
Pin = +30 dBm  
0 V bias  
Note:  
1. Package marking code is white.  
3
PIN General Purpose Diodes, Electrical Specifications TA = 25°C  
Nearest  
Equivalent  
Axial Lead  
Part No.  
5082-  
Minimum  
Breakdown  
Voltage  
Maximum  
Series  
Resistance  
RS ( )  
Maximum  
Total  
Capacitance  
CT ( pF)  
Part  
Package  
Number Marking  
HSMP-  
Lead  
Code  
Code[1]  
Configuration  
Single  
Series  
Common Anode  
Common Cathode  
VBR (V)  
3830  
3832  
3833  
3834  
K0  
K2  
K3  
K4  
0
2
3
4
3077  
200  
1.5  
0.3  
Test Conditions  
V = VBR  
Measure  
IF = 100 mA  
f = 100 MHz  
V = 50 V  
f = 1 MHz  
R
R
IR 10 mA  
High Frequency ( Low Inductance, 500 MHz – 3 GHz) PIN Diodes, Electrical Specifications TA = 25°C  
Minimum  
Break-  
down  
Maximum  
Series  
Resis-  
Typical  
Total  
Capaci-  
Maximum  
Total  
Capaci-  
Typical  
Total  
Induc-  
Part  
Package  
Number Marking Lead  
Config-  
uration  
Voltage  
tance  
RS ( )  
tance  
CT ( pF)  
tance  
CT ( pF)  
tance  
LT ( nH)  
Appli-  
cation  
HSMP-  
Code  
Code  
VBR ( V)  
4810  
EB  
B
Dual  
100  
3.0  
0.35  
0.4  
1.0  
Attenu-  
ator  
Cathode  
Dual Anode  
Dual Anode  
4820  
4890  
FA  
GA  
A
A
50  
0.6*  
0.75*  
0.33  
1.0  
1.0*  
1.0  
Limiter  
Switch  
100  
2.5**  
0.375  
VR = VBR  
Measure  
IF = 100 mA  
IF = 10 mA*  
IF = 5 mA**  
VR = 50 V  
f = 1 MHz  
VR = 50 V  
f = 1 MHz  
f = 500 MHz –  
3 GHz  
VR = 20 V*  
IR 10 µA  
V = 20 V*  
V = 0 V  
R
R
PIN General Purpose Diodes, Typical Specifications TA = 25°C  
Code  
Minimum  
Breakdown  
Voltage VBR ( V)  
Typical Series  
Resistance  
RS ( )  
Typical Total  
Capacitance  
CT ( pF)  
Part Number  
HSMP-  
Marking  
Lead  
Code  
Code[1]  
Configuration  
3860  
3862  
3863  
3864  
L0  
L2  
L3  
L4  
0
2
3
4
Single  
Series  
Common Anode  
Common Cathode  
50  
3.0/1.5*  
0.20  
Test Conditions  
VR = VBR  
Measure  
IR 10 µA  
IF = 10 mA  
f = 100 MHz  
*IF = 100 mA  
V = 50 V  
f = 1 MHz  
R
Typical Parameters at TA = 25°C  
Part Number  
HSMP-  
Series Resistance  
Carrier Lifetime  
Reverse Recovery Time  
Trr (ns)  
Total Capacitance  
CT ( pF)  
RS ( )  
τ ( ns)  
380X  
381X  
382X  
383X  
388X  
389X  
55  
75  
1.5  
20  
3.8  
3.8  
1800  
1500  
70*  
500  
2500  
200*  
500  
300  
7
80  
550  
0.32 @ 50 V  
0.27 @ 50 V  
0.60 @ 20 V  
0.20 @ 50 V  
0.30 @ 50 V  
0.20 @ 5 V  
Test Conditions  
IF = 1 mA  
f = 100 MHz  
IF = 10 mA*  
IF = 50 mA  
IR = 250 mA  
IF = 10 mA*  
IR = 6 mA*  
V = 10 V  
IF = 20 mA  
90% Recovery  
R
Note:  
1. Package marking code is white.  
4
Typical Parameters at TA = 25°C ( unless otherwise noted) , Single Diode  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
0.35  
10000  
1000  
100  
10  
HSMP-381x, /HSMP-4810  
HSMP-383x, -386x  
0.30  
1 MHz  
1 MHz  
0.25  
0.20  
100 MHz  
1 GHz  
30 MHz  
1
HSMP-382x, -4820  
frequency>100 MHz  
0.1  
0.01  
0.15  
0.15  
0
2
4
6
8
10 12 14 16 18 20  
0
2
4
6
8
10 12 14 16 18 20  
0.1  
1
10  
100  
I
– FORWARD BIAS CURRENT (mA)  
REVERSE VOLTAGE (V)  
REVERSE VOLTAGE (V)  
F
Figure 3. Resistance at 25°C vs.  
Forward Bias Current.  
Figure 1. RF Capacitance vs. Reverse  
Bias, HSMP-3810 Series.  
Figure 2. RF Capacitance vs. Reverse  
Bias, HSMP-3830 Series.  
1.4  
1.2  
10000  
3000  
TA = +85°C  
TA = +85°C  
1000  
T
T
A = +25°C  
A = –55°C  
T
T
A = +25°C  
A = –55°C  
1000  
100  
10  
1
0.8  
0.6  
0.4  
0.2  
0
HSMP-382X  
HSMP-3880  
100  
HSMP-3800  
HSMP-381X  
10  
1
HSMP-3830  
10  
HSMP-3890  
30  
1
0.01  
0
20  
40  
50  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
I
– FORWARD BIAS CURRENT (mA)  
V
– REVERSE VOLTAGE (V)  
F
I
– FORWARD BIAS CURRENT (mA)  
R
F
Figure 5. RF Resistance vs. Forward  
Bias Current for HSMP-3810/  
HSMP-4810.  
Figure 6. Capacitance vs. Reverse  
Voltage.  
Figure 4. RF Resistance vs. Forward  
Bias Current for HSMP-3800.  
120  
120  
100  
Diode Mounted as a  
Diode Mounted as a  
HSMP-382X  
Series Attenuator in a  
50 Ohm Microstrip and  
Tested at 123 MHz  
Series Attenuator  
in a 50 Ohm Microstrip  
and Tested at 123 MHz  
110  
100  
90  
115  
VR = 2V  
110  
V
R = 5V  
105  
HSMP-3830  
HSMP-3880  
80  
10  
100  
VR = 10V  
HSMP-3810  
HSMP-3820  
70  
95  
60  
HSMP-3830  
HSMP-3830  
90  
50  
HSMP-3890  
85  
1
10  
40  
1000  
20  
FORWARD CURRENT (mA)  
30  
100  
10  
1
10  
30  
DIODE RF RESISTANCE (OHMS)  
I
– FORWARD BIAS CURRENT (mA)  
F
Figure 7. 2nd Harmonic Input  
Intercept Point vs. Diode RF  
Resistance for Attenuator Diodes.  
Figure 8. 2nd Harmonic Input  
Intercept Point vs. Forward Bias  
Current for Switch Diodes.  
Figure 9. Reverse Recovery Time vs.  
Forward Current for Various Reverse  
Voltages. HSMP-3820 Series.  
5
Typical Parameters (continued)  
1000  
900  
800  
700  
600  
500  
200  
160  
120  
1000  
HSMP-3830  
V
= 5V  
R
V = –2V  
R
V
= 10V  
R
V
V
= 5V  
R
400  
300  
= 10V  
= 20V  
R
R
100  
V
80  
V
= –5V  
R
V
= 20V  
R
200  
40  
0
V
= –10V  
R
100  
10  
10  
10  
20  
FORWARD CURRENT (mA)  
30  
15  
20  
25  
30  
10  
15  
20  
25  
30  
FORWARD CURRENT (mA)  
FORWARD CURRENT (mA)  
Figure 11. Typical Reverse Recovery  
Time vs. Reverse Voltage. HSMP-3880  
Series.  
Figure 12. Typical Reverse Recovery  
Time vs. Reverse Voltage. HSMP-3890  
Series.  
Figure 10. Reverse Recovery Time vs.  
Forward Current for Various Reverse  
Voltage. HSMP-3830 Series.  
100  
100  
100  
HSMP-3810  
HSMP-4810  
HSMP-3800  
HSMP-382X  
HSMP-482X  
10  
1
10  
1
10  
1
0.1  
0.1  
0.1  
25°C  
–50°C  
125°C  
0.2 0.4  
–50°C  
–50°C  
125°C 25°C  
0.4 0.6  
25°C  
125°C  
0.2 0.4  
0.01  
0.01  
0.01  
0
0.6  
0.8  
1.0  
1.2  
0
0.6  
0.8  
1.0 1.2  
0
0.2  
0.8  
1.0 1.2  
V
– FORWARD VOLTAGE (mA)  
V
– FORWARD VOLTAGE (mA)  
V
– FORWARD VOLTAGE (mA)  
F
F
F
Figure 13. Forward Current vs.  
Forward Voltage. HSMP-3800 Series.  
Figure 14. Forward Current vs.  
Forward Voltage. HSMP-3810 and  
HSMP-4810 Series.  
Figure 15. Forward Current vs.  
Forward Voltage. HSMP-3820 and  
HSMP-4820 Series.  
100  
100  
10  
1
100  
HSMP-3830  
10  
1
10  
1
0.1  
0.1  
0.1  
125°C 25°C  
–55°C  
125°C 25°C –50°C  
–55°C  
0.6 0.8  
V – FORWARD VOLTAGE (mA)  
F
125°C 25°C  
0.01  
0.01  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0 1.2  
0
0.2  
0.4  
0.6  
0.8  
1.0 1.2  
0
0.2 0.4  
1.0 1.2  
V
– FORWARD VOLTAGE (mA)  
V
– FORWARD CURRENT (mA)  
F
F
Figure 16. Forward Current vs.  
Forward Voltage. HSMP-3830 Series.  
Figure 17. Forward Current vs.  
Forward Voltage. HSMP-3880 Series.  
Figure 18. Forward Current vs.  
Forward Voltage. HSMP-3890 and  
HSMP-4890 Series.  
6
Typical Parameters (continued)  
1000  
100  
0.5  
0.4  
0.3  
0.2  
0.1  
0
TA = +125°C  
TA = +25°C  
TA = +85°C  
TA = +25°C  
TA = –55°C  
T
A = –50°C  
10  
1
100  
10  
1
0.1  
0.01  
0.01  
0.1  
1
10  
100  
0
0.2  
0.4  
0.6  
0.8  
1.0 1.2  
0
5
10  
V – REVERSE VOLTAGE (V)  
R
15  
20  
BIAS CURRENT (mA)  
V
– FORWARD VOLTAGE (V)  
F
Figure 19. Typical RF Resistance vs.  
Forward Bias Current for HSMP-3860.  
Figure 20. Forward Current vs.  
Forward Voltage for HSMP-3860.  
Figure 21. Typical Capacitance vs.  
Reverse Bias for HSMP-3860.  
Equivalent Circuit Model  
HSMS-3860  
Cp  
0.08 pF  
L
R
s
R
p
j
1.5  
2.0 nH  
Cj  
RT = 1.5 + Rj  
CT = CP + Cj  
12  
0.12 pF*  
* Measured at -20 V  
Rj  
=
I0.9  
I = Forward Bias Current in mA  
7
Typical Applications for Multiple Diode Products  
RF COMMON  
RF COMMON  
RF 2  
RF 1  
RF 1  
RF 2  
BIAS 1  
BIAS 2  
BIAS  
BIAS  
Figure 22. Simple SPDT Switch, Using Only Positive Current.  
Figure 23. High Isolation SPDT Switch, Dual Bias.  
RF COMMON  
RF COMMON  
BIAS  
RF 1  
RF 2  
RF 2  
RF 1  
BIAS  
Figure 24. Switch Using Both Positive and Negative Bias  
Current.  
Figure 25. Very High Isolation SPDT Switch, Dual Bias.  
8
Typical Applications for Multiple Diode Products (continued)  
VARIABLE BIAS  
RF IN/OUT  
INPUT  
FIXED  
BIAS  
VOLTAGE  
Figure 26. Four Diode π Attenuator.  
BIAS  
Figure 27. High Isolation SPST Switch  
( Repeat Cells as Required) .  
Figure 28. Power Limiter Using HSMP-3822  
Diode Pair.  
9
Typical Applications for HSMP-48XX Low Inductance Series  
3
0.5nH  
0.3 pF*  
3
3
0.5 nH  
0.5 nH  
1
2
1
2
1
2
HSMP-4810  
HSMP-4820 & HSMP-4890  
*0.8pF TYPICAL FOR HSMP-3820  
Figure 29. Internal Connections.  
Figure 30. Equivalent Circuit.  
0.3 pF*  
0.25 nH  
0.5 nH  
*0.8 pF TYPICAL FOR HSMP-3820  
Figure 32. Equivalent Circuit.  
Figure 31. Circuit Layout.  
Microstrip Series  
Connection for HSMP-48XX Series  
In order to take full advantage  
of the low inductance of the  
HSMP-48XX series when using  
them in series application,  
both lead 1 and lead 2 should be  
connected together, as shown above.  
10  
1.5 nH  
1.5 nH  
50 OHM MICROSTRIP LINES  
0.3 pF*  
0.3 nH  
0.3 nH  
PAD CONNECTED TO  
GROUND BY TWO  
VIA HOLES  
*0.8 pF TYPICAL FOR HSMP-4820  
Figure 33. Circuit Layout.  
Figure 34. Equivalent Circuit.  
Microstrip Shunt  
Connections for  
HSMP-48XX Series  
In the diagram above, the  
center conductor of the  
microstrip line is interrupted  
and leads 1 and 2 of the  
increasing the maximum  
HSMP-38XX series diode are  
placed across the resulting gap.  
This forces the 0.5 nH lead  
inductance of leads 1 and 2 to  
appear as part of a low pass  
filter, reducing the shunt  
available attenuation. The 0.3 nH  
of shunt inductance external  
to the diode is created by the via  
holes, and is a good estimate for  
0.032" thick material.  
parasitic inductance and  
Co-Planar Waveguide  
Groundplane  
0.3 pF*  
0.75 nH  
Center Conductor  
Groundplane  
*0.8 pF TYPICAL FOR HSMP-4820  
Figure 35. Circuit Layout.  
Figure 36. Equivalent Circuit.  
Co-Planar Waveguide  
Shunt Connection for  
HSMP-48XX Series  
Co-Planar waveguide, with  
ground on the top side of the  
printed circuit board, is shown  
in the diagram above. Since it  
eliminates the need for via holes  
to ground, it offers lower shunt  
parasitic inductance and higher  
maximum attenuation when  
compared to a microstrip circuit.  
11  
Package Dimensions  
PC Board Footprints  
Outline 23 ( SOT-23)  
SOT-23  
1.02 (0.040)  
0.89 (0.035)  
0.54 (0.021)  
0.37 (0.015)  
DATE CODE (X)  
0.037  
0.95  
0.037  
0.95  
PACKAGE  
MARKING  
CODE (XX)  
3
1.40 (0.055)  
1.20 (0.047)  
2.65 (0.104)  
2.10 (0.083)  
X X X  
2
1
0.079  
2.0  
0.50 (0.024)  
0.45 (0.018)  
2.04 (0.080)  
1.78 (0.070)  
TOP VIEW  
0.035  
0.9  
0.152 (0.006)  
0.066 (0.003)  
3.06 (0.120)  
2.80 (0.110)  
0.031  
0.8  
1.02 (0.041)  
0.85 (0.033)  
inches  
DIMENSIONS IN  
mm  
0.69 (0.027)  
0.45 (0.018)  
0.10 (0.004)  
0.013 (0.0005)  
SIDE VIEW  
END VIEW  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
SOT-143  
Outline 143 ( SOT-143)  
0.92 (0.036)  
0.78 (0.031)  
DATE CODE (X)  
0.112  
2.85  
E
B
C
PACKAGE  
MARKING  
CODE (XX)  
0.079  
2
1.40 (0.055)  
1.20 (0.047)  
2.65 (0.104)  
2.10 (0.083)  
X X X  
0.033  
0.85  
E
0.60 (0.024)  
0.45 (0.018)  
0.108  
2.75  
0.075  
1.9  
0.041  
1.05  
0.54 (0.021)  
0.37 (0.015)  
0.071  
1.8  
2.04 (0.080)  
1.78 (0.070)  
0.033  
0.85  
3.06 (0.120)  
2.80 (0.110)  
0.15 (0.006)  
0.09 (0.003)  
0.047 0.031 0.033  
1.04 (0.041)  
0.85 (0.033)  
1.2  
0.8  
0.85  
inches  
mm  
DIMENSIONS IN  
0.69 (0.027)  
0.45 (0.018)  
0.10 (0.004)  
0.013 (0.0005)  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
Package Characteristics  
Lead Material ...................................................................................... Alloy 42  
Lead Finish ............................................................................ Tin-Lead 85-15%  
Maximum Soldering Temperature .............................. 260°C for 5 seconds  
Minimum Lead Strength .......................................................... 2 pounds pull  
Typical Package Inductance .................................................................. 2 nH  
Typical Package Capacitance ..............................0.08 pF (opposite leads)  
Profile Option Descriptions  
-BLK = Bulk  
-TR1 = 3K pc. Tape and Reel, Device Orientation; See Figures 37 and 38  
-TR2 = 10K pc. Tape and Reel, Device Orientation; See Figures 37 and 38  
Tape and Reeling conforms to Electronic Industries RS-481, “Taping of  
Surface Mounted Components for Automated Placement.”  
Ordering Information  
Specify part number followed by option under. For example:  
H
SMP  
-
38XX  
- XXX  
Bulk or Tape and Reel Option  
Part Number  
Surface Mount PIN Diode  
Hewlett-Packard  
REEL  
CARRIER  
TAPE  
USER  
FEED  
DIRECTION  
COVER TAPE  
TOP VIEW  
4 mm  
END VIEW  
8 mm  
www.hp.com/go/rf  
For technical assistance or the location of  
your nearest Hewlett-Packard sales  
office, distributor or representative call:  
Figure 37. Options -TR1, -TR2 for SOT-23 Packages.  
Americas/Canada: 1-800-235-0312 or  
408-654-8675  
TOP VIEW  
4 mm  
END VIEW  
Far East/Australasia: Call your local HP  
sales office.  
Japan: (81 3) 3335-8152  
Europe: Call your local HP sales office.  
8 mm  
Data subject to change.  
Copyright © 1999 Hewlett-Packard Co.  
Obsoletes 5968-3435E  
5968-5439E (6/99)  
Figure 38. Options -TR1, -TR2 for SOT-143 Packages.  
配单直通车
HSMP-3800产品参数
型号:HSMP-3800
是否Rohs认证: 不符合
生命周期:Obsolete
IHS 制造商:HEWLETT PACKARD CO
包装说明:R-PDSO-G3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.80
风险等级:5.09
Is Samacsys:N
其他特性:LOW DISTORTION
应用:ATTENUATOR
最小击穿电压:100 V
配置:SINGLE
最大二极管电容:0.37 pF
标称二极管电容:0.35 pF
二极管元件材料:SILICON
最大二极管正向电阻:2.5 Ω
二极管电阻测试电流:100 mA
二极管电阻测试频率:100 MHz
二极管类型:PIN DIODE
JESD-30 代码:R-PDSO-G3
JESD-609代码:e0
少数载流子标称寿命:1.8 µs
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
最大功率耗散:0.25 W
认证状态:Not Qualified
反向测试电压:50 V
子类别:PIN Diodes
表面贴装:YES
技术:POSITIVE-INTRINSIC-NEGATIVE
端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING
端子位置:DUAL
Base Number Matches:1
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