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产品型号HV823LG-G的概述

HV823LG-G芯片概述 HV823LG-G是一款高效能的单片集成电路，专为高压应用设计，广泛应用于继电器驱动、电机控制、以及高功率LED驱动等领域。该芯片的结构紧凑，能够以低成本实现高效率的控制，因而受到众多消费电子、工业控制以及汽车电子领域的青睐。HV823LG-G中的集成的高压输入设计使其在许多场合下都具有良好的兼容性和适应性。 HV823LG-G详细参数在理解HV823LG-G的性能和适用性时，其详细参数尤为重要。这款芯片通常在工作电压范围内表现理想，其具体参数如下： - 工作电压范围：HV823LG-G的工作电压可在10V到30V之间，适应于不同的应用需求。 - 输出电流：最大输出电流可达500mA，适合驱动多种负载。 - 工作频率：最高可支持100kHz的开关频率，有利于提高系统的响应速度。 - 温度范围：工作的环境温度范围为-40°C至+85°C，确保在极端环境下仍能...

产品型号HV823LG-G的Datasheet PDF文件预览

HV823

High Voltage EL Lamp Driver

Ordering Information

Package Options

Device

Input Voltage

8-Lead SO

Die

HV823

2.0V to 9.5V

HV823LG

HV823X

Features

General Description

❏

Processed with HVCMOS^®technology

2.0V to 9.5V operating supply voltage

DC to AC conversion

TheSupertexHV823isahigh-voltagedriverdesignedfordriving

EL lamps of up to 50nF. EL lamps greater than 50nF can be

driven for applications not requiring high brightness. The input

supply voltage range is from 2.0 to 9.5V.The device uses a single

inductor and a minimum number of passive components. The

nominal regulated output voltage that is applied to the EL lamp

is 90V.The chip can be enabled by connecting the resistors on

R_SW-oscand R_EL-osctoV_DDand disabled when connected to GND.

180V peak-to-peak typical output voltage

Large output load capability typically 50nF

Permits the use of high-resistance elastomeric lamp

components

The HV823 has two internal oscillators, a switching MOSFET,

and a high-voltage EL lamp driver.The frequency for the switch-

ing converter MOSFET is set by an external resistor connected

between the R_SW-oscpin and the supply pin V_DD. The EL lamp

driver frequency is set by an external resistor connected be-

tween R_EL-oscpin and the V_DDpin. An external inductor is

connected between the L_xand V_DDpins. A 0.01µF to 0.1µF

capacitor is connected between C_Sand GND. The EL lamp is

connected between V_Aand V_B.

❏

Adjustable output lamp frequency to control lamp color,

lamp life, and power consumption

Adjustable converter frequency to eliminate harmonics and

optimize power consumption

❏

Enable/disable function

Low current draw under no load condition

The switching MOSFET charges the external inductor and

discharges it into the C_scapacitor.The voltage at C_swill start to

increase.Once the voltage at C_sreaches a nominal value of 90V,

the switching MOSFET is turned OFF to conserve power. The

outputs V_Aand V_Bare configured as an H-bridge and are

switchedinoppositestatestoachieve180Vpeak-to-peakacross

the EL lamp.

Applications

❏

Handheld personal computers

Electronic personal organizers

GPS units

Pagers

Pin Configuration

Cellular phones

Portable instrumentation

ςΑ

V_DD

R_SW-osc

C_s

R_EL-osc

V_A

Absolute Maximum Ratings*

Supply Voltage, V_DD

-0.5V to +10V

V_B

Output Voltage, V_Cs

-0.5V to +120V

-25°C to +85°C

-65°C to +150°C

400mW

L_x

GND

Operating Temperature Range

Storage Temperature Range

Power Dissipation

SO-8

Note:

*All voltages are referenced to GND.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

HV823

Electrical Characteristics

DC Characteristics (V_IN= 3.0V, R_SW= 750KΩ, R_EL= 2.0MΩ, T_A= 25°C unless otherwise specified)

Symbol

R_DS(on)

V_CS

Parameter

Min

Typ

Max

Units

Conditions

On-resistance of switching transistor

Output voltage V_CSRegulation

Output peak to peak voltage

Ω

I = 100mA

100

200

100

200

300

500

V_IN= 2.0 to 9.5V

V_A- V_B

I_DDQ

160

180

V_IN= 2.0V to 9.5V

Quiescent V_DDsupply current, disabled

Input current going into the V_DDpin

µA

R_SW-osc= Low

I_DD

150

V_IN= 3.0V. See Figure 1.

V_IN= 5.0V. See Figure 2.

_IN= 9.0V. See Figure 3.

I_IN

Input current including inductor current

Output voltage on V_CS

V_IN= 3.0V. See Figure 1.

V_CS

f_EL

f_SW

330

V_A-Boutput drive frequency

Switching transistor frequency

Switching transistor duty cycle

380

450

KHz

Recommended Operating Conditions

Symbol

Parameter

Min

2.0

-25

Typ

Max

Units

Conditions

V_DD

Supply voltage

Operating temperature

9.5

T_A

+85

°C

Enable/Disable Table (See Figure 4)

R_SWresistor

HV823

V_DD

Enable

Disable

HV823

Block Diagram

L_x

V_DD

C_s

R_SW-osc

Enable *

Switch

Osc

V_A

GND

Disable

Vref

Output

Osc

V_B

R_EL-osc

* Enable is available in die form only.

Figure 1:Test Circuit, V_IN= 3.0V (Low input current with moderate output brightness).

Ω

Typical Performance

Lamp Size

V_IN

I_IN

V_CS

65v

f_EL

385Hz

Brightness

3.0 in²

3.0v

25mA

6.5ft-lm

Notes:

1. Murata part # LQH4N561K04 (DC resistance < 14.5Ω)

2. Larger values may be required depending upon supply impedance.

For additional information, see Application Notes AN-H33 and AN-H34.

HV823

Typical Performance Curves for Figure 1 using 3in²EL Lamp.

_{IN vs.}V_IN

V_{CS vs.}V_IN

V_IN(V)

Brightness vs. V_IN

I_{IN vs.}V_CS(V)

V_CS(V)

V_IN(V)

, V , Brightness vs. Inductor Value

IN CS

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

V_CS(V)

Brightness (ft-lm)

I_IN(mA)

100

250

400

550

700

850

1000

Inductor Value (µH)

HV823

Figure 2:Typical 5.0V Application

Ω

Typical Performance

Lamp Size

V_IN

I_IN

V_CS

f_EL

Brightness

6.0 in²

5.0v

25mA

75v

380Hz

6.5ft-lm

Notes:

1. Murata part # LQH4N561K04 (DC resistance < 14.5Ω)

2. Larger values may be required depending upon supply impedance.

For additional information, see Application Notes AN-H33 and AN-H34.

Typical Performance Curves for Figure 2

V_{CS vs.}V_IN

I_{IN vs.}V_IN

V_IN(V)

_IN(V)

Brightness vs. V_IN

I_{IN vs.}V_CS(V)

7.5

6.5

5.5

V_IN(V)

V_CS(V)

HV823

Figure 3:Typical 9.0V Application*

2MΩ

V_DD

R_EL-osc

330K

Ω

4.9KΩ

V_A

560µH¹

0.1µF²

R_SW-osc

C_s

42nF

V_B

V_DD= V_IN

= 9.0V

1N4148

GND

L_x

Equivalent to 12 square inch lamp

HV823

1nF

16v

0.01µF

100V

Typical Performance

Lamp Size

V_IN

I_IN

V_CS

f_EL

Brightness

12.0 in²

9.0v

30mA

75v

380Hz

8.5ft-lm

Notes:

1. Murata part # LQH4N561K04 (DC resistance < 14.5Ω)

2. Larger values may be required depending upon supply impedance.

For additional information, see Application Notes AN-H33 and AN-H34.

Typical Performance Curves for Figure 3

V_{CS vs.}V_IN

I_{IN vs.}V_IN

V_IN(V)

Brightness vs. V_IN

I_{IN vs.}V_CS(V)

7.5

6.5

5.5

_IN(V)

V_CS(V)

HV823

External Component Description

External Component

Selection Guide Line

Diode

Fast reverse recovery diode, 1N4148 or equivalent.

Cs Capacitor

R_EL-osc

0.01µF to 0.1µF, 100V capacitor to GND is used to store the energy transferred from the inductor.

The EL lamp frequency is controlled via an external R_ELresistor connected between R_EL-oscand V_DDof the

device. The lamp frequency increases as R_ELdecreases. As the EL lamp frequency increases, the amount

of current drawn from the battery will increase and the output voltage V_CSwill decrease. The color of the EL

lamp is dependent upon its frequency.

A 2MΩ resistor would provide lamp frequency of 330 to 450Hz. Decreasing the R_EL-oscby a factor of 2 will

increase the lamp frequency by a factor of 2.

R_SW-osc

The switching frequency of the converter is controlled via an external resistor, R_SWbetween R_SW-oscand V_DD

of the device. The switching frequency increases as R_SWdecreases. With a given inductor, as the switching

frequency increases, the amount of current drawn from the battery will decrease and the output voltage, V_CS

will also decrease.

C_SWCapacitor

Lx Inductor

A 1nF capacitor is recommended on R_SW-oscto GND when a 0.01µF C_Scapacitor is used. This capacitor

is used to shunt any switching noise that may couple into the R_SW-oscpin. The C_SWcapacitor may also be

needed when driving large EL lamp due to increase in switching noise.

The inductor L_xis used to boost the low input voltage by inductive flyback. When the internal switch is on,

the inductor is being charged. When the internal switch is off, the charge stored in the inductor will be

transferred to the high voltage capacitor C_S. The energy stored in the capacitor is connected to the internal

H-bridge and therefore to the EL lamp. In general, smaller value inductors, which can handle more current,

are more suitable to drive larger size lamps. As the inductor value decreases, the switching frequency of the

inductor (controlled by R_SW) should be increased to avoid saturation.

560µH Murata inductors with 14.5Ω series DC resistance is typically recommended. For inductors with the

sameinductancevaluebutwithlowerseriesDCresistance, lowerR_SWvalueisneededtopreventhighcurrent

draw and inductor saturation.

Lamp

As the EL lamp size increases, more current will be drawn from the battery to maintain high voltage across

the EL lamp. The input power, (V_INx I_IN), will also increase. If the input power is greater than the power

dissipation of the package (400mW), an external resistor in series with one side of the lamp is recommended

to help reduce the package power dissipation.

Enable/Disable Configuration

TheHV823canbeeasilyenabledanddisabledviaalogiccontrol

signal on the R_SWand R_ELresistors as shown in Figure 4 below.

The control signal can be from a microprocessor. R_SWand R_EL

are typically very high values. Therefore, only 10’s of microam-

peres will be drawn from the logic signal when it is at a logic high

(enable) state. When the microprocessor signal is high the

device is enabled and when the signal is low, it is disabled.

Figure 4: Enable/Disable Configuration

Remote

Enable

ON =V_DD

OFF = 0V

R_EL

V_DD

R_EL-osc

V_A

R_SW

R_SW-osc

C_s

L_x

EL Lamp

V_B

V_IN= V_DD

1N4148

GND

L_x

4.7µF

15V

HV823LG

C_S

100V

1nF

HV823

Split Supply Configuration for Battery

Voltages of Higher than 9.5V

Split Supply Configuration Using a Single

Cell (1.5V) Battery

The HV823 can also be used for handheld devices operating

from a single cell 1.5V battery where a regulated voltage is

available. This is shown in Figure 5. The regulated voltage

can be used to run the internal logic of the HV823. The

amount of current necessary to run the internal logic is

typically 100µA at a V_DDof 3.0V. Therefore, the regulated

voltage could easily provide the current without being loaded

down. The HV823 used in this configuration can also be

enabled/disabled via logic control signal on the R_SWand R_EL

resistors as shown in Figure 4.

Figure5canalsobeusedwithhighbatteryvoltagessuchas12V

as long as the input voltage, V_DD, to the HV823 device is within

its specifications of 2.0V to 9.5V.

Figure 5: Split Supply Configuration

Remote

Enable

ON =V_DD

R_EL

OFF = 0

_DD= Regulated

V_DD

R_EL-osc

V_A

Voltage

R_SW

R_SW-osc

C_s

L_x

EL Lamp

V_B

V_IN= Battery

Voltage

1N4148

GND

L_x

0.1µF*

HV823LG

C_S

100V

*Larger values may be required depending upon supply impedance.

For additional information, see Application Notes AN-H33 and AN-H34.

11/12/01

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895

www.supertex.com

HV823LG-G相关文章

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HV823LG-G产品参数

型号:	HV823LG-G
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
零件包装代码：	SOIC
包装说明：	SOP,
针数：	8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	8.54
接口集成电路类型：	EL DISPLAY DRIVER
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
长度：	4.9 mm
功能数量：	1
区段数：	1
端子数量：	8
最高工作温度：	85 °C
最低工作温度：	-25 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
座面最大高度：	1.75 mm
最大供电电压：	9.5 V
最小供电电压：	2 V
标称供电电压：	3 V
表面贴装：	YES
技术：	CMOS
温度等级：	OTHER
端子面层：	MATTE TIN
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	3.9 mm
Base Number Matches：	1

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