0
R
Virtex™-E 1.8 V Extended Memory
Field Programmable Gate Arrays
0
0
DS025-3 (v2.1) February 1, 2002
Preliminary Product Specification
Virtex-E Extended Memory Electrical Characteristics
Definition of Terms
Electrical and switching characteristics are specified on a
per-speed-grade basis and can be designated as Advance,
Preliminary, or Production. Each designation is defined as
follows:
Advance:
These speed files are based on simulations only
and are typically available soon after device design specifi-
cations are frozen. Although speed grades with this desig-
nation are considered relatively stable and conservative,
some under-reporting might still occur.
Preliminary:
These speed files are based on complete ES
(engineering sample) silicon characterization. Devices and
speed grades with this designation are intended to give a
better indication of the expected performance of production
silicon. The probability of under-reporting delays is greatly
reduced as compared to Advance data.
Production:
These speed files are released once enough
production silicon of a particular device family member has
been characterized to provide full correlation between
speed files and devices over numerous production lots.
There is no under-reporting of delays, and customers
receive formal notification of any subsequent changes. Typ-
ically, the slowest speed grades transition to Production
before faster speed grades.
All specifications are representative of worst-case supply
voltage and junction temperature conditions. The parame-
ters included are common to popular designs and typical
applications. Contact the factory for design considerations
requiring more detailed information.
Table 1
correlates the current status of each Virtex-E
Extended Memory device with a corresponding speed file
designation.
Table 1:
Virtex-E Extended Memory Device
Speed Grade Designations
Speed Grade Designations
Device
XCV405E
XCV812E
Advance
Preliminary
–8, –7, –6
–8, –7, –6
Production
All specifications are subject to change without notice.
DC Characteristics
Absolute Maximum Ratings
Symbol
V
CCINT
V
CCO
V
REF
V
IN
V
TS
V
CC
T
STG
T
J
Description
(1)
Internal Supply voltage relative to GND
(2)
Supply voltage relative to GND
Input Reference Voltage
Input voltage relative to GND
Voltage applied to 3-state output
Longest Supply Voltage Rise Time from 0 V – 1.71 V
Storage temperature (ambient)
Junction temperature
(3)
Plastic packages
–0.5 to 2.0
–0.5 to 4.0
–0.5 to 4.0
–0.5 to 4.0
–0.5 to 4.0
50
–65 to +150
+125
Units
V
V
V
V
V
ms
°
C
°
C
Notes:
1. Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions
is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time can affect device reliability.
2. Xilinx recommends that all device power supplies (V
CCINT
, V
CCO
) be powered up simultaneously. Other power supply sequence
options might result in higher than typical power-up currents.
3. For soldering guidelines and thermal considerations, see the
infomation on the Xilinx website.
© 2001-2002 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at
All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice.
DS025-3 (v2.1) February 1, 2002
1-800-255-7778
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