JANTXV2N6784全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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Provisional Data Sheet No. PD-9.424B

JANTX2N6784

JANTXV2N6784

[REF:MIL-PRF-19500/556]

HEXFET^®POWER MOSFET

[GENERIC:IRFF210]

N-CHANNEL

200 Volt, 1.5Ω HEXFET

Product Summary

Part Number

JANTX2N6784

JANTXV2N6784

BVDSS

RDS(on)

ID

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

2.25A

200V

1.5Ω

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6784, JANTXV2N6784 Units

I

D

@ V

= 10V, T = 25°C Continuous Drain Current

2.25

GS

C

A

I

@ V

= 10V, T = 100°C Continuous Drain Current

1.50

9.0

D

GS

C

I

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ➂

Operating Junction

DM

@ T = 25°C

P

15

W

W/K ➄

V

D

C

0.12

±20

V

GS

dv/dt

5.0

V/ns

T

J

-55 to 150

T

STG

StorageTemperature Range

Lead Temperature

(0.063 in. (1.6mm) from

300

^oC

g

case for 10.5 seconds)

0.98 (typical)

Weight

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JANTX2N6784, JANTXV2N6784 Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

BV

Drain-to-Source Breakdown Voltage

200

—

V

= 0V, I = 1.0 mA

D

DSS

GS

V/°C Reference to 25°C, I = 1.0 mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.25

DSS

J

D

Voltage

➃

= 10V, I = 1.5A

GS D

R

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

—

2.0

0.9

—

1.5

1.725

4.0

—

25

V

DS(on)

Ω

V

S ( )

= 10V, I = 2.25A

GS D

V

g

= V , I = 250µA

GS(th)

fs

DS

GS

D

Ω

V

> 15V, I

= 1.5A ➃

DS

I

V

= 0.8 x Max Rating,V = 0V

DSS

DS

GS

µA

—

250

V

= 0.8 x Max Rating

DS

V

= 0V, T = 125°C

GS

J

I

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

4.3

0.7

0.5

—

5.0

100

-100

6.2

1.2

5.0

15

20

30

20

—

V

= 20V

GS

GSS

nA

nC

I

V

= -20V

GSS

GS

Q

V

= 10V, I = 2.25A

D

g

gs

gd

GS

V = Max. Rating x 0.5

DS

see figures 6 and 13

V = 100V, I = 2.25A,

DD

t

d(on)

D

t

R

= 7.5Ω, VGS= 10V

r

G

ns

t

d(off)

t

L

see figure 10

f

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Modified MOSFET

symbol showing the

internal inductances.

D

S

nH

pF

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

L

Internal Source Inductance

—

15

—

C

Input Capacitance

Output Capacitance

ReverseTransfer Capacitance

—

140

55

8.6

—

V

= 0V, V

f = 1.0 MHz

see figure 5

= 25V

DS

iss

oss

rss

GS

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

I

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

—

2.25

9.0

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

S

SM

A

V

t

Q

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.5

350

3.0

V

ns

µC

T = 25°C, I = 2.25A, V

= 0V ➃

j

SD

rr

RR

S

GS

T = 25°C, I = 2.25A, di/dt ≤ 100A/µs

j

F

V

≤ 50V ➃

DD

t

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

on

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

R

Junction-to-Case

—

8.3

thJC

thJA

Junction-to-Ambient

—

175

K/W

Typical socket mount

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JANTX2N6784, JANTXV2N6784 Device

Fig. 1 — Typical Output Characteristics

T_C= 25°C

Fig. 2 — Typical Output Characteristics

T_C= 150°C

Fig. 3 — Typical Transfer Characteristics

Fig. 4 — Normalized On-Resistance Vs.Temperature

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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JANTX2N6784, JANTXV2N6784 Device

Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 8 — Maximum Safe Operating Area

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10b — Switching Time Waveforms

Fig. 10a — Switching Time Test Circuit

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JANTX2N6784, JANTXV2N6784 Device

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 13b — Basic Gate Charge Waveform

Fig. 13a — Gate Charge Test Circuit

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JANTX2N6784, JANTXV2N6784 Device

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

(see figure 11)

➂ I

SD

≤ 2.25A, di/dt ≤ 70A/µs,

≤ BV , T ≤ 150°C

V

DD

DSS

J

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➁ @ V

= 50V, Starting T = 25°C,

J

DD

= [0.5

➄ K/W = °C/W

2

E

L

(I ) [BV

/(BV

-V )]

AS

*

DSS

= 10V, 25 ≤ R ≤ 200Ω

DSS DD

W/K = W/°C

L

Peak I = 2.25A, V

L

GS

G

Case Outline and Dimensions — TO-205AF (Modified TO-39)

All dimensions are shown millimeters (inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

10/96

To Order

型号:	JANTXV2N6784
生命周期：	Active
IHS 制造商：	DEFENSE SUPPLY CENTER COLUMBUS
包装说明：	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.7
Is Samacsys：	N
其他特性：	RADIATION HARDENED
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	200 V
最大漏极电流 (ID)：	2.25 A
最大漏源导通电阻：	1.5 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-205AF
JESD-30 代码：	O-MBCY-W3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	METAL
封装形状：	ROUND
封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	9 A
认证状态：	Qualified
参考标准：	MILITARY STANDARD (USA)
表面贴装：	NO
端子形式：	WIRE
端子位置：	BOTTOM
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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