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    产品型号JANTXV2N7222的Datasheet PDF文件预览

    PD - 90492D  
    IRFM440  
    JANTX2N7222  
    JANTXV2N7222  
    POWER MOSFET  
    THRU-HOLE (TO-254AA)  
    REF:MIL-PRF-19500/596  
    500V, N-CHANNEL  
    HEXFET® MOSFETTECHNOLOGY  
    Product Summary  
    Part Number  
    RDS(on)  
    ID  
    IRFM440  
    0.85 Ω  
    8.0A  
    HEXFET® MOSFET technology is the key to International  
    Rectifier’s advanced line of power MOSFET transistors. The  
    efficient geometry design achieves very low on-state re-  
    sistance combined with high transconductance. HEXFET  
    transistors also feature all of the well-established advan-  
    tages of MOSFETs, such as voltage control, very fast switch-  
    ing, ease of paralleling and electrical parameter temperature  
    stability. They are well-suited for applications such as switch-  
    ing power supplies, motor controls, inverters, choppers,  
    audio amplifiers, high energy pulse circuits, and virtually  
    any application where high reliability is required. The  
    HEXFET transistor’s totally isolated package eliminates the  
    need for additional isolating material between the device  
    and the heatsink. This improves thermal efficiency and  
    reduces drain capacitance.  
    TO-254AA  
    Features:  
    n
    n
    n
    n
    n
    n
    Simple Drive Requirements  
    Ease of Paralleling  
    Hermetically Sealed  
    Electrically Isolated  
    Dynamic dv/dt Rating  
    Light-weight  
    Absolute Maximum Ratings  
    Parameter  
    Units  
    I
    @ V  
    @ V  
    = 10V, T = 25°C  
    Continuous Drain Current  
    8.0  
    5.0  
    D
    GS  
    C
    A
    I
    = 10V, T = 100°C Continuous Drain Current  
    D
    GS  
    C
    I
    Pulsed Drain Current ➀  
    Max. Power Dissipation  
    32  
    DM  
    @ T = 25°C  
    P
    125  
    W
    W/°C  
    V
    D
    C
    Linear Derating Factor  
    1.0  
    V
    Gate-to-Source Voltage  
    ±20  
    GS  
    E
    Single Pulse Avalanche Energy ➀  
    Avalanche Current ➀  
    700  
    mJ  
    A
    AS  
    I
    8.0  
    AR  
    E
    Repetitive Avalanche Energy ➀  
    Peak Diode Recovery dv/dt ➀  
    Operating Junction  
    12.5  
    3.5  
    mJ  
    V/ns  
    AR  
    dv/dt  
    T
    -55 to 150  
    J
    T
    Storage Temperature Range  
    oC  
    g
    STG  
    300 ( 0.063 in.(1.6mm) from case for 10s)  
    9.3 (Typical)  
    Lead Temperature  
    Weight  
    For footnotes refer to the last page  
    www.irf.com  
    1
    2/6/02  
    IRFM440  
    Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
    Parameter  
    Min Typ Max Units  
    Test Conditions  
    BV  
    DSS  
    Drain-to-Source Breakdown Voltage  
    500  
    —
    —
    —
    —
    V
    V
    = 0V, I = 1.0mA  
    D
    GS  
    V/°C Reference to 25°C, I = 1.0mA  
    ∆BV  
    /∆T Temperature Coefficient of Breakdown  
    0.78  
    DSS  
    J
    D
    Voltage  
    R
    Static Drain-to-Source On-State  
    Resistance  
    Gate Threshold Voltage  
    Forward Transconductance  
    Zero Gate Voltage Drain Current  
    —
    —
    2.0  
    4.7  
    —
    —
    —
    —
    —
    —
    —
    0.85  
    0.95  
    4.0  
    —
    V
    V
    = 10V, I = 5.0A  
    D
    DS(on)  
    GS  
    GS  
    ➀
    Ω
    = 10V, I = 8.0A  
    D
    V
    V
    V
    = V , I = 250µA  
    GS(th)  
    fs  
    DS  
    GS  
    D
    Ω
    g
    S ( )  
    V
    > 15V, I  
    = 5.0A ➀  
    DS  
    V
    DS  
    I
    25  
    250  
    = 400V ,V =0V  
    DSS  
    DS GS  
    µA  
    —
    V
    = 400V,  
    DS  
    = 0V, T = 125°C  
    V
    GS  
    J
    I
    I
    Gate-to-Source Leakage Forward  
    Gate-to-Source Leakage Reverse  
    Total Gate Charge  
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    6.8  
    100  
    -100  
    68.5  
    12.5  
    42.4  
    21  
    V
    = 20V  
    = -20V  
    GSS  
    GSS  
    GS  
    nA  
    nC  
    V
    GS  
    Q
    Q
    Q
    V
    =10V, I = 8.0A  
    GS D  
    g
    gs  
    gd  
    d(on)  
    r
    Gate-to-Source Charge  
    Gate-to-Drain (‘Miller’) Charge  
    Turn-On Delay Time  
    Rise Time  
    Turn-Off Delay Time  
    FallTime  
    V
    DS  
    =250V  
    t
    t
    t
    t
    V
    DD  
    V
    GS  
    = 250V, I = 8.0A,  
    D
    73  
    72  
    =10V, R = 9.1Ω  
    G
    ns  
    d(off)  
    f
    51  
    L
    + L  
    Total Inductance  
    —
    Measured from drain lead (6mm/  
    0.25in. from package) to source lead  
    (6mm/0.25in. from package)  
    S
    D
    nH  
    C
    C
    C
    Input Capacitance  
    Output Capacitance  
    —
    —
    —
    1300  
    310  
    —
    —
    —
    V
    = 0V, V  
    = 25V  
    iss  
    oss  
    rss  
    GS  
    DS  
    f = 1.0MHz  
    pF  
    Reverse Transfer Capacitance  
    120  
    Source-Drain Diode Ratings and Characteristics  
    Parameter  
    Min Typ Max Units  
    Test Conditions  
    I
    I
    V
    t
    Continuous Source Current (Body Diode)  
    Pulse Source Current (Body Diode) ➀  
    Diode Forward Voltage  
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    8.0  
    32  
    1.5  
    700  
    8.9  
    S
    A
    SM  
    V
    T = 25°C, I = 8.0A, V  
    = 0V ➀  
    j
    SD  
    rr  
    S
    GS  
    Reverse Recovery Time  
    nS  
    µC  
    T = 25°C, I = 8.0A, di/dt ≤ 100A/µs  
    j
    F
    Q
    Reverse Recovery Charge  
    V
    DD  
    ≤ 50V ➀  
    RR  
    t
    Forward Turn-On Time  
    Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
    S D  
    on  
    Thermal Resistance  
    Parameter  
    Min Typ Max Units  
    Test Conditions  
    R
    R
    Junction-to-Case  
    Case-to-Sink  
    —
    —
    —
    1.0  
    —
    thJC  
    thCS  
    0.21  
    °C/W  
    R
    Junction-to-Ambient  
    —
    —
    48  
    Typical socket mount  
    thJA  
    Note: Corresponding Spice and Saber models are available on the G&S Website.  
    For footnotes refer to the last page  
    2
    www.irf.com  
    IRFM440  
    Fig 1. Typical Output Characteristics  
    Fig 2. Typical Output Characteristics  
    Fig 3. Typical Transfer Characteristics  
    Fig 4. Normalized On-Resistance  
    Vs.Temperature  
    www.irf.com  
    3
    IRFM440  
    13a & b  
    Fig 6. Typical Gate Charge Vs.  
    Fig 5. Typical Capacitance Vs.  
    Gate-to-SourceVoltage  
    Drain-to-SourceVoltage  
    Fig 8. Maximum Safe Operating Area  
    Fig 7. Typical Source-Drain Diode  
    ForwardVoltage  
    4
    www.irf.com  
    IRFM440  
    RD  
    VDS  
    VGS  
    D.U.T.  
    RG  
    +VDD  
    -
    10V  
    Pulse Width ≤ 1 µs  
    Duty Factor ≤ 0.1 %  
    Fig 10a. Switching Time Test Circuit  
    V
    DS  
    90%  
    10%  
    V
    GS  
    t
    t
    r
    t
    t
    f
    Fig 9. Maximum Drain Current Vs.  
    d(on)  
    d(off)  
    CaseTemperature  
    Fig 10b. Switching Time Waveforms  
    Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
    www.irf.com  
    5
    IRFM440  
    15V  
    DRIVER  
    L
    V
    D S  
    D.U .T  
    AS  
    .
    R
    G
    +
    -
    V
    D D  
    I
    A
    2V  
    10  
    0.01  
    Ω
    t
    p
    Fig 12a. Unclamped Inductive Test Circuit  
    V
    (BR)D SS  
    t
    p
    Fig 12c. Maximum Avalanche Energy  
    Vs. DrainCurrent  
    I
    AS  
    Current Regulator  
    Fig 12b. Unclamped Inductive Waveforms  
    Same Type as D.U.T.  
    50KΩ  
    .2µF  
    10  
    V  
    Q
    G
    .3µF  
    10 V  
    +
    V
    DS  
    D.U.T.  
    -
    Q
    Q
    GD  
    GS  
    V
    GS  
    V
    G
    3mA  
    I
    I
    D
    G
    Charge  
    Current Sampling Resistors  
    Fig 13b. Gate Charge Test Circuit  
    Fig 13a. Basic Gate Charge Waveform  
    6
    www.irf.com  
    IRFM440  
    Footnotes:  
    ➀➀ I  
    SD  
    ≤ 8.0A, di/dt ≤ 100A/µs,  
    ➀➀ Repetitive Rating; Pulse width limited by  
    V
    ≤ 500V, T ≤ 150°C  
    maximum junction temperature.  
    DD  
    J
    ➀➀➀V  
    = 50V, starting T = 25°C, L= 21.8mH  
    J
    DD  
    Peak I = 8.0A, V  
    ➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  
    = 10V  
    L
    GS  
    Case Outline and Dimensions —TO-254AA  
    0.12 [.005]  
    0.12 [.005]  
    6.60 [.260]  
    6.32 [.249]  
    6.60 [.260]  
    6.32 [.249]  
    13.84 [.545]  
    13.59 [.535]  
    13.84 [.545]  
    13.59 [.535]  
    3.78 [.149]  
    3.53 [.139]  
    3.78 [.149]  
    3.53 [.139]  
    1.27 [.050]  
    1.02 [.040]  
    1.27 [.050]  
    1.02 [.040]  
    A
    A
    20.32 [.800]  
    20.07 [.790]  
    20.32 [.800]  
    20.07 [.790]  
    17.40 [.685]  
    16.89 [.665]  
    17.40 [.685]  
    16.89 [.665]  
    B
    13.84 [.545]  
    13.59 [.535]  
    22.73 [.895]  
    21.21 [.835]  
    B
    13.84 [.545]  
    13.59 [.535]  
    R 1.52 [.060]  
    1
    2
    3
    1
    2
    3
    4.06 [.160]  
    3.56 [.140]  
    C
    17.40 [.685]  
    16.89 [.665]  
    0.84 [.033]  
    MAX.  
    4.82 [.190]  
    3.81 [.150]  
    1.14 [.045]  
    0.89 [.035]  
    3X  
    3.81 [.150]  
    2X  
    1.14 [.045]  
    0.89 [.035]  
    0.36 [.014]  
    B A  
    3X  
    3.81 [.150]  
    3.81 [.150]  
    2X  
    0.36 [.014]  
    B A  
    NOTES:  
    PIN AS SIGNMENT S  
    1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994.  
    2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
    3. CONTROLLING DIMENS ION: INCH.  
    1
    2
    3
    =
    =
    =
    DRAIN  
    SOURCE  
    GATE  
    4. CONFORMS TO JEDEC OUT LINE T O-254AA.  
    CAUTION  
    BERYLLIA WARNING PER MIL-PRF-19500  
    Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them  
    which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that  
    will produce fumes containing beryllium.  
    IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
    TAC Fax: (310) 252-7903  
    Visit us at www.irf.com for sales contact information.  
    Data and specifications subject to change without notice. 02/02  
    www.irf.com  
    7
    配单直通车
    JANTXV2N7222产品参数
    型号:JANTXV2N7222
    生命周期：Active
    IHS 制造商：DEFENSE SUPPLY CENTER COLUMBUS
    零件包装代码：TO-254AA
    包装说明：FLANGE MOUNT, S-MSFM-P3
    针数：3
    Reach Compliance Code：unknown
    风险等级：5.71
    其他特性：HIGH RELIABILITY
    雪崩能效等级（Eas）：700 mJ
    外壳连接：ISOLATED
    配置：SINGLE WITH BUILT-IN DIODE
    最小漏源击穿电压：500 V
    最大漏极电流 (ID)：8 A
    最大漏源导通电阻：0.95 Ω
    FET 技术：METAL-OXIDE SEMICONDUCTOR
    JEDEC-95代码：TO-254AA
    JESD-30 代码：S-MSFM-P3
    元件数量：1
    端子数量：3
    工作模式：ENHANCEMENT MODE
    封装主体材料：METAL
    封装形状：SQUARE
    封装形式：FLANGE MOUNT
    峰值回流温度（摄氏度）：NOT SPECIFIED
    极性/信道类型：N-CHANNEL
    最大脉冲漏极电流 (IDM)：32 A
    认证状态：Qualified
    参考标准：MIL-19500/596
    表面贴装：NO
    端子形式：PIN/PEG
    端子位置：SINGLE
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    Base Number Matches：1
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