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产品型号MBRM110LT1G的概述

MBRM110LT1G的概述 MBRM110LT1G是由ON Semiconductor公司（原名为Semiconductor Components Industries, LLC）生产的一款肖特基二极管。肖特基二极管是凭借其低正向电压降和快速恢复特性而广泛应用于各种电子电路之中。MBRM110LT1G因其有效的性能指标，常用于整流、保护电路以及开关电源等领域。 MBRM110LT1G的详细参数 MBRM110LT1G的主要技术参数包括： 1. 最高反向工作电压（VR）：100 V 2. 平均整流电流（IF(AV)）：1 A 3. 正向电压降（VF）：最高0.5 V（在1 A时） 4. 反向漏电流（IR）：最高0.1 mA（在25°C时，VR=100 V） 5. 工作温度范围：-55°C至+150°C 6. 封装类型：SOT-23 7. 特性：该二极管具有快速的恢复时间和极低的正向电压...

产品型号MBRM110LT1G的Datasheet PDF文件预览

MBRM110L

Surface Mount

Schottky Power Rectifier

POWERMITE^®

Power Surface Mount Package

http://onsemi.com

The Schottky Powermite employs the Schottky Barrier principle

with a barrier metal and epitaxial construction that produces optimal

forward voltage drop−reverse current tradeoff. The advanced

packaging techniques provide for a highly efficient micro miniature,

space saving surface mount Rectifier. With its unique heatsink design,

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES, 10 VOLTS

the Powermite has the same thermal performance as the SMA while

being 50% smaller in footprint area, and delivering one of the lowest

height profiles, < 1.1 mm in the industry. Because of its small size, it is

ideal for use in portable and battery powered products such as cellular

and cordless phones, chargers, notebook computers, printers, PDAs

and PCMCIA cards. Typical applications are AC−DC and DC−DC

converters, reverse battery protection, and “ORing” of multiple supply

voltages and any other application where performance and size are

critical.

ANODE

CATHODE

POWERMITE

CASE 457

PLASTIC

Features

• Ultra Low V

• 1st in Marketplace with a 10 V Schottky Rectifier

MARKING DIAGRAM

• Low Profile − Maximum Height of 1.1 mm

• Small Footprint − Footprint Area of 8.45 mm

• Low Thermal Resistance with Direct Thermal Path of Die on

Exposed Cathode Heat Sink

1L1 G

• ESD Protection: Human Body Model >4000 V (Class 3)

Machine Model >400 V (Class C)

• Pb−Free Packages are Available

Mechanical Characteristics:

= Date Code

• Powermite is JEDEC Registered as D0−216AA

• Case: Molded Epoxy

1L1 = Device Code

= Pb−Free Package

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 62 mg (Approximately)

ORDERING INFORMATION

†

• Lead and Mounting Surface Temperature for Soldering Purposes:

Device

MBRM110LT1

Package

Shipping

260°C Maximum for 10 Seconds

POWERMITE 3000/Tape & Reel

MBRM110LT1G POWERMITE 3000/Tape & Reel

(Pb−Free)

MBRM110LT3

POWERMITE 12000/Tape & Reel

MBRM110LT3G POWERMITE 12000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

September, 2005 − Rev. 1

MBRM110L/D

MBRM110L

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

Average Rectified Forward Current (T = 115°C, R

= 35°C/W)

1.0

Non−Repetitive Peak Surge Current

FSM

(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)

Storage Temperature

−55 to 125

10,000

°C

stg

Operating Junction Temperature

Voltage Rate of Change (Rated V , T = 25°C)

dv/dt

V/ms

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Thermal Resistance, Junction−to−Lead (Anode) (Note 1)

Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)

Thermal Resistance, Junction−to−Ambient (Note 1)

277

°C/W

tjl

tjtab

tja

1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 2)

T = 25°C

T = 100°C

(I = 0.1 A)

0.280

0.365

0.415

0.175

0.275

0.325

(I = 1.0 A)

(I = 2.0 A)

Maximum Instantaneous Reverse Current (Note 2)

T = 25°C

T = 100°C

(V = 5.0 V)

(V = 10 V)

0.2

0.5

2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.

T = 125°C

100°C

75°C

100°C

75°C

25°C

−55°C

25°C

0.3

−55°C

0.4

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.1

0.2

0.5

0.6

0.7

V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

Figure 2. Maximum Forward Voltage

http://onsemi.com

MBRM110L

1E−1

1E−2

1E−3

1E−4

1E+0

1E−1

1E−2

1E−3

T = 125°C

100°C

75°C

100°C

75°C

25°C

1E−4

1E−5

1E−6

V , REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current

Figure 4. Maximum Reverse Current

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

SQUARE WAVE

0.2

100

120

140

T , LEAD TEMPERATURE (°C)

Figure 5. Current Derating − Junction to Lead

500

450

400

350

300

250

200

0.45

0.4

0.35

0.3

SQUARE WAVE

0.25

0.2

T = 25°C

f = 1 MHz

0.15

0.1

150

100

0.05

0.2 0.4

0.6 0.8 1.0 1.2

1.4 1.6 1.8

V , REVERSE VOLTAGE (VOLTS)

I , AVERAGE FORWARD CURRENT (AMPS)

Figure 6. Typical Capacitance

Figure 7. Forward Power Dissipation

http://onsemi.com

MBRM110L

1.0

0.1

50%

20%

10%

5.0%

2.0%

1.0%

0.01

Rtjl(t) = Rtjl*r(t)

0.001

0.00001

0.0001

0.001

0.01

0.1

1.0

100

T, TIME (s)

Figure 8. Thermal Response Junction to Lead

1.0

50%

20%

10%

0.1

5.0%

0.01

2.0%

Rtjl(t) = Rtjl*r(t)

1.0%

0.001

0.00001

0.0001

0.001

0.01

0.1

T, TIME (s)

1.0

100

1,000

Figure 9. Thermal Response Junction to Ambient

http://onsemi.com

MBRM110L

PACKAGE DIMENSIONS

POWERMITE

CASE 457−04

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,

PROTRUSIONS OR GATE BURRS. MOLD FLASH,

PROTRUSIONS OR GATE BURRS SHALL NOT

EXCEED 0.15 (0.006) PER SIDE.

−A−

0.08 (0.003)

MILLIMETERS

INCHES

MIN

TERM. 1

DIM MIN

MAX

2.05

2.18

1.15

0.69

1.00

MAX

0.081

0.086

0.045

0.027

0.039

−B−

1.75

0.85

0.40

0.70

0.069

0.033

0.016

0.028

TERM. 2

−0.05 +0.10 −0.002 +0.004

0.10

3.60

0.50

1.20

0.25

3.90

0.80

1.50

0.004

0.142

0.020

0.047

0.010

0.154

0.031

0.059

0.50 REF

0.019 REF

0.08 (0.003)

−T−

SOLDERING FOOTPRINT*

0.635

0.025

2.67

0.762

0.030

0.105

2.54

0.100

1.27

0.050

inches

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MBRM110L/D

http://onsemi.com

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MBRM110LT1G产品参数

型号:	MBRM110LT1G
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	ON SEMICONDUCTOR
零件包装代码：	DO-216AA
包装说明：	LEAD FREE, MICRO MINIATURE, PLASTIC, CASE 457-04, POWERMITE-2
针数：	2
制造商包装代码：	457-04
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
Factory Lead Time：	1 week
风险等级：	0.9
Samacsys Confidence：	4
Samacsys Status：	Released
Samacsys PartID：	383374
Samacsys Pin Count：	2
Samacsys Part Category：	Schottky Diode
Samacsys Package Category：	Other
Samacsys Footprint Name：	POWERMITE CASE 457?04 ISSUE F
Samacsys Released Date：	2018-09-05 17:56:53
Is Samacsys：	N
外壳连接：	CATHODE
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.175 V
JEDEC-95代码：	DO-216AA
JESD-30 代码：	R-PSSO-G1
JESD-609代码：	e3
湿度敏感等级：	1
最大非重复峰值正向电流：	50 A
元件数量：	1
端子数量：	1
最高工作温度：	125 °C
最低工作温度：	-55 °C
最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
最大重复峰值反向电压：	10 V
子类别：	Rectifier Diodes
表面贴装：	YES
技术：	SCHOTTKY
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

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产品型号MBRM110LT1G的概述

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