PIC18F26K80T-E/SO新就库存!引脚增强型闪存微控制器!
日期:2022-5-16PIC18F26K80T-E/SO这是一款引脚增强型闪存微控制器,现在下单,3680PCS 可在23-May-2022发货
PIC18F26K80T-E/SO优势和特点:
20 nA Sleep mode (Watch Webinar)
300nA Watch Dog Timer operation in Sleep modes
Integrated ECAN? conforming to CAN 2.0B active specification
Extreme Low Power Sleep mode ideal for battery applications
Operating voltage 1.8V – 5.5V
Charge Time Measurement Unit (CTMU) supports Touch sensing and advanced sensing applications
11 ch, 12-bit ADC
4 Capture / Compare / PWM modules and 1 Enhanced Capture / Compare / PWM modules
1 MSSP serial ports for SPI or I2C? communication
2 Enhanced USART modules
Two analog comparators
Digital Signal Modulator
Self programming Flash supports 10k erase/write cycles & 20 years retention
PIC18F26K80T-E/SO产品参数说明:
Program Memory Type | Flash |
Program Memory Size (KB) | 64 |
CPU Speed (MIPS/DMIPS) | 16 |
Data EEPROM (bytes) | 1024 |
Capture/Compare/PWM (CCP) | 4 |
Max 8 Bit Digital Timers | 2 |
Number of ADCs | 1 |
ADC Channels | 8 |
Max ADC Resolution (bits) | 12 |
Number of Comparators | 2 |
Temp. Range Min. | -40 |
Temp. Range Max. | 125 |
Operation Voltage Max.(V) | 5.5 |
Operation Voltage Min.(V) | 1.8 |
Pin Count | 28 |
Low Power | Yes |
更多型号说明:
Special Microcontroller Features:
? Operating Voltage Range: 1.8V to 5.5V
? On-Chip 3.3V Regulator
? Operating Speed up to 64 MHz
? Up to 64 Kbytes On-Chip Flash Program Memory:
- 10,000 erase/write cycle, typical
- 20 years minimum retention, typical
? 1,024 Bytes of Data EEPROM:
- 100,000 Erase/write cycle data EEPROM
memory, typical
? 3.6 Kbytes of General Purpose Registers (SRAM)
? Three Internal Oscillators: LF-INTOSC (31 KHz),
MF-INTOSC (500 kHz) and HF-INTOSC (16 MHz)
? Self-Programmable under Software Control
? Priority Levels for Interrupts
? 8 x 8 Single-Cycle Hardware Multiplier
? Extended Watchdog Timer (WDT):
- Programmable period from 4 ms to 4,194s
? In-Circuit Serial Programming (ICSP) via Two Pins
? In-Circuit Debug via Two Pins
? Programmable BOR
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