HMC7149国宇航芯常定型号时有现货
日期：2018-6-10摘要：HMC7149
HMC7149的中英文资料
The HMC7149 is an 10W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 6 and 18 GHz. The amplifier typically provides 20 dB of small signal gain, +40 dBm of saturated output power, and +39.5 dBm output IP3 at +28 dBm output power per tone. The HMC7149 draws 680 mA current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was acquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.
HMC7149是一个10W氮化镓（GaN）MMIC功率放大器，工作在6和18 GHz之间。放大器通常提供20分贝的小信号增益，40 dBm的饱和输出功率，和+39.5 dBm输出IP3在+28 dBm输出功率每音调。HMC7149从A+28伏直流电源引出680毫安电流。射频I/OS匹配到50欧姆，便于集成到多芯片模块（MCMS）中。所有的电气性能数据是通过将模具共晶连接到1.02毫米（40密耳）厚的CAMO载体上的，具有多个1密耳直径的球键，将模具连接到氧化铝上的50欧姆传输线。
Applications
应用
Test Instrumentation
测试仪表
General Communications
一般通信
Radar
雷达
The HMC7149 is an 10W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 6 and 18 GHz. The amplifier typically provides 20 dB of small signal gain, +40 dBm of saturated output power, and +39.5 dBm output IP3 at +28 dBm output power per tone. The HMC7149 draws 680 mA current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was acquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.
HMC7149是一个10W氮化镓（GaN）MMIC功率放大器，工作在6和18 GHz之间。放大器通常提供20分贝的小信号增益，40 dBm的饱和输出功率，和+39.5 dBm输出IP3在+28 dBm输出功率每音调。HMC7149从A+28伏直流电源引出680毫安电流。射频I/OS匹配到50欧姆，便于集成到多芯片模块（MCMS）中。所有的电气性能数据是通过将模具共晶连接到1.02毫米（40密耳）厚的CAMO载体上的，具有多个1密耳直径的球键，将模具连接到氧化铝上的50欧姆传输线。
Applications
应用
Test Instrumentation
测试仪表
General Communications
一般通信
Radar
雷达
HMC7149的特点
高pSAT：+40 dBm
功率增益在PSAT:+ 10分贝
高输出IP3：+39.5 dBm
小信号增益：20分贝
电源电压：+28伏@ 0.680
50欧姆匹配输入输出
芯片尺寸：3.4×4.5×0.1平方毫米
高pSAT：+40 dBm
功率增益在PSAT:+ 10分贝
高输出IP3：+39.5 dBm
小信号增益：20分贝
电源电压：+28伏@ 0.680
50欧姆匹配输入输出
芯片尺寸：3.4×4.5×0.1平方毫米
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