MMBFJ210各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

MMBFJ210

MMBFJ211

MMBFJ212

J210

J211

J212

G

S

TO-92

G

S

SOT-23

Mark: 62V / 62W / 62X

D

NOTE: Source & Drain

are interchangeable

D

N-Channel RF Amplifier

This device is designed for HF/VHF mixer/amplifier and

applications where Process 50 is not adequate. Sufficient

gain and low noise for sensitive receivers. Sourced from

Process 90.

Absolute Maximum Ratings*

TA= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DG

Drain-Gate Voltage

25

- 25

V

V_GS

Gate-Source Voltage

I_GF

Forward Gate Current

10

mA

5

Operating and Storage Junction Temperature Range

-55 to +150

C

°

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA= 25°C unless otherwise noted

Max

Symbol

Characteristic

Units

J210-212

*MMBFJ210-212

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

350

2.8

125

225

1.8

mW

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

357

556

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

J210/J211/J212/MMBFJ210/J211/J212, Rev A

N-Channel RF Amplifier

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max Units

OFF CHARACTERISTICS

V_(BR)GSS

Gate-Source Breakdown Voltage

- 25

V

I_G= 1.0 mA, V _DS= 0

V_GS= 15 V, V_DS= 0

V_DS= 15 V, I_D= 1.0 nA

I_GSS

Gate Reverse Current

- 100

pA

V_GS(off)

Gate-Source Cutoff Voltage

210

211

212

-1.0

- 2.5

- 4.0

-3.0

- 4.5

- 6.0

V

ON CHARACTERISTICS

210

211

212

I_{D S S}

Zero-Gate Voltage Drain Current*

2.0

7.0

15

1 5

2 0

4 0

m A

V _{D S}= 15 V, V _{G S}= 0

SMALL SIGNAL CHARACTERISTICS

Common Source Forward

Transconductance

V_DS= 15 V, V _GS= 0, f = 1.0 kHz

g_fs

210

211

212

4000

6000

7000

12,000

mmhos

Common Source Output

Conductance

V_DS= 15 V, V _GS= 0, f = 1.0 kHz

200

g_oss

*PulseTest: Pulse Width £ 300 mS

Typical Characteristics

Parameter Interactions

Common Drain-Source

N-Channel RF Amplifier

(continued)

Typical Characteristics (continued)

Transfer Characteristics

Noise Voltage vs. Frequency

Leakage Current vs. Voltage

5

Output Conductance

vs. Drain Current

Transconductance vs.

Drain Current

N-Channel RF Amplifier

(continued)

Typical Characteristics (continued)

Capacitance vs. Voltage

Common Source Characteristics

Input Admittance

Forward Transadmittance

Output Admittance

Reverse Transadmittance

N-Channel RF Amplifier

(continued)

Common Gate Characteristics

Input Admittance

Forward Transadmittance

Reverse Transadmittance

Output Admittance

5

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

OPTOPLANAR™

PACMAN™

POP™

PowerTrench

QFET™

QS™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

FAST

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

SMART START™

Stealth™

UltraFET

VCX™

EcoSPARK™

E²CMOS^TM

EnSigna^TM

FACT™

FACT Quiet Series™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H2

型号:	MMBFJ210
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code：	unknown
风险等级：	5.71
Is Samacsys：	N
配置：	SINGLE
FET 技术：	JUNCTION
最高频带：	VERY HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
工作模式：	DEPLETION MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.225 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号MMBFJ210的概述

产品型号MMBFJ210的Datasheet PDF文件预览

MMBFJ210相关产品..

MMBFJ210相关文章

IC37:专业IC行业平台