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产品型号MSMBJSAC50E3的Datasheet PDF文件预览

TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
- Unidirectional construction  
- Available J-bend termination  
SURFACE MOUNT  
500 Watt Low Capacitance  
Transient Voltage Suppressor  
- Selections for 5.0 to 75 V standoff voltages (VWM  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMBJSAC5.0 thru MSMBJSAC75, e3  
FEATURES  
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Optional up screening available by replacing the M prefix with MA, MX or MXL. These  
prefixes specify various screening and conformance inspection options based on  
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options  
DO-214AA  
.
.
.
.
.
Low capacitance performance of 30pF  
Suppresses transients up to 500 W Peak Pulse Power @ 10/1000  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
Low Capacitance for data-line protection to 10 MHz  
Protection for aircraft fast data rate lines per select waveforms in RTCA/DO-160F (see  
MicroNote 130 for Waveform 4 and 5A capability) & ARINC 429 with bit rates of 100 kb/s (per  
ARINC 429, Part 1, par. 2.4.1.1)  
.
.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MSMBJSAC5.0 to MSMBJSAC75  
Class 2: MSMBJSAC5.0 to MSMBJSAC45  
Class 3: MSMBJSAC5.0 to MSMBJSAC22  
Class 4: MSMBJSAC5.0 to MSMBJSAC10  
.
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance  
o
Class 1: MSMBJSAC5.0 to MSMBJSAC26  
o
o
Class 2: MSMBJSAC5.0 to MSMBJSAC15  
Class 3: MSMBJSAC5.0 to MSMBJSAC7.0  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 ºC: 500 watts at 10/1000 μs with impulse repetition rate  
(duty factor) of 0.01 % or less*  
.
.
.
.
tclamping (0 volts to VBR min.): < 5 ns theoretical for unidirectional  
Operating and Storage temperature: -65 °C to +150 °C  
Steady-State Power dissipation*: 2.5 watts at TL = +75 ºC  
Solder temperatures: 260 ºC for 10 s (maximum)  
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff  
voltage) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the  
TVS element.  
Also see Figures 5 and 6 for further protection details in rated peak pulse power for  
unidirectional and bidirectional configurations respectively.  
RF01021 Rev A, October 2010  
High Reliability Product Group  
Page 1 of 4  
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
___________________________________________________________________________________________________________________________________  
MECHANICAL AND PACKAGING  
.
.
Void-free transfer molded thermosetting epoxy body meeting UL94V-0  
J-bend tin-lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating solderable per  
MIL-STD-750, method 2026  
.
.
.
.
Cathode indicated by band  
Part number marked on package  
Available in Bulk or Custom Tape & Reel packaging  
Weight: 0.1 gram (approximately)  
PACKAGE DIMENSIONS  
PAD LAYOUT  
SYMBOLS & DEFINITIONS  
Symbol  
Definition  
Symbol Definition  
VWM  
PPP  
VBR  
ID  
Working Peak (Standoff) Voltage  
Peak Pulse Power  
Breakdown Voltage  
Standby Current  
IPP  
VC  
Peak Pulse Current  
Clamping Voltage  
Breakdown Current for VBR  
IBR  
RF01021 Rev A, October 2010  
High Reliability Product Group  
Page 2 of 4  
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
___________________________________________________________________________________________________________________________________  
ELECTRICAL CHARACTERISTICS @ 25oC  
REVERSE  
STAND-OFF  
VOLTAGE  
(Note 1)  
BREAKDOWN  
VOLTAGE  
@ I(BR) 1.0mA  
V(BR)  
MAXIMUM  
STANDBY  
CURRENT  
@VWM  
MAXIMUM  
CLAMPING  
VOLTAGE  
IP = 5.0A*  
VC  
MAXIMUM  
PEAK PULSE  
CURRENT*  
RATING  
MAXIMUM  
CAPACITANCE  
@ O Volts,  
WORKING  
INVERSE  
BLOCKING  
VOLTAGE  
VWIB  
INVERSE  
BLOCKING  
LEAKAGE  
CURRENT  
IIB @ VWIB  
PEAK INVERSE  
BLOCKING  
VOLTAGE  
VPIB  
MICROSEMI PART  
NUMBER  
f=1 MHz  
VWM  
ID  
IPP  
Volts  
Min.  
Volts  
5.0  
6.0  
7.0  
8.0  
8.5  
10  
12  
15  
18  
22  
Volts  
10.0  
11.2  
12.6  
13.4  
14.0  
16.3  
19.0  
23.6  
28.8  
35.4  
42.3  
60.0  
77.0  
88.0  
121  
Amps  
44  
41  
38  
36  
34  
29  
25  
20  
pF  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
30  
Volts  
75  
75  
75  
75  
75  
75  
75  
75  
75  
75  
75  
75  
150  
150  
150  
Volts  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
200  
200  
200  
A
300  
300  
300  
100  
50  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
A
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
MSMBJSAC5.0  
MSMBJSAC6.0  
MSMBJSAC7.0  
MSMBJSAC8.0  
MSMBJSAC8.5  
MSMBJSAC10  
MSMBJSAC12  
MSMBJSAC15  
MSMBJSAC18  
MSMBJSAC22  
MSMBJSAC26  
MSMBJSAC36  
MSMBJSAC45  
MSMBJSAC50  
MSMBJSAC75  
7.60  
7.90  
8.33  
8.89  
9.44  
11.10  
13.30  
16.70  
20.00  
24.40  
28.90  
40.0  
50.00  
55.50  
83.3  
15  
14  
26  
36  
45  
50  
11.1  
8.6  
6.8  
5.8  
4.1  
75  
*See Figure 3. For the MSMBJSAC75, the maximum clamping voltage VC is at the maximum rated Peak Pulse Current (IPP) of 4.1 Amps.  
Clamping Factor: The ratio of the numerical value of VC to V(BR) is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote 108.  
Note 1: A transient voltage suppressor is normally selected according to voltage (VWM), that should be equal to or greater than the dc or continuous peak  
operating voltage level.  
Note 2: When pulse testing, test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.  
GRAPHS  
RF01021 Rev A, October 2010  
High Reliability Product Group  
Page 3 of 4  
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
___________________________________________________________________________________________________________________________________  
GRAPHS Cont.  
SCHEMATIC APPLICATIONS  
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low  
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where  
random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also  
provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse  
voltage rating than the TVS clamping voltage VC.  
If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions  
(including the reverse of each rectifier diode) is inherently provided in Figure 6. The unidirectional and bidirectional configurations in Figure 5  
and 6 will both result in twice the capacitance of Figure 4.  
RF01021 Rev A, October 2010  
High Reliability Product Group  
Page 4 of 4  
配单直通车
MSMBJSAC50E3产品参数
型号:MSMBJSAC50E3
是否Rohs认证:符合
生命周期:Active
IHS 制造商:MICROSEMI CORP
零件包装代码:DO-214AA
包装说明:R-PDSO-J2
针数:2
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.10.00.50
风险等级:1.77
Is Samacsys:N
其他特性:HIGH RELIABILITY
最小击穿电压:55.5 V
配置:SINGLE
二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-J2
JESD-609代码:e3
最大非重复峰值反向功率耗散:500 W
元件数量:1
端子数量:2
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL
最大功率耗散:2.5 W
认证状态:Not Qualified
参考标准:MIL-19500
最大重复峰值反向电压:50 V
表面贴装:YES
技术:AVALANCHE
端子面层:MATTE TIN
端子形式:J BEND
端子位置:DUAL
Base Number Matches:1
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