NDS352P现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号NDS352P的概述

芯片NDS352P的概述 NDS352P是一款高效能的功率MOSFET，广泛应用于各种电子电路中，尤其是在开关电源、电机驱动和RF放大器等领域中。该芯片的优越性能使其在现代电子设计中得到广泛认可，成为了许多工程师的首选部件。NDS352P以其低导通电阻、高开关速度和较高的耐压能力，使其在高效能和高频应用中表现出色。 NDS352P使用了先进的工艺技术，确保了其在高频、高温环境下的稳定运行，适合于大功率和快速切换的应用场合。这种器件主要以N沟道MOSFET形式提供，具有较低的输入电容和快速的开关特性，使其能够有效降低开关损耗和提高整体系统效率。芯片NDS352P的详细参数 NDS352P的主要电气参数如下： - 最大漏极源极电压 (V_DS): 55V - 最大栅极源极电压 (V_GS): ±20V - 最大漏极电流 (I_D): 30A - 静态导通电阻 (R_DS(on)): 0....

产品型号NDS352P的Datasheet PDF文件预览

March 1996

NDS352P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

These P-Channel logic level enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance. These devices are

particularly suited for low voltage applications such as

notebook computer power management, portable

electronics, and other battery powered circuits where fast

high-side switching, and low in-line power loss are

needed in a very small outline surface mount package.

-0.85A, -20V. R_DS(ON)= 0.5W @ V_GS= -4.5V.

Proprietary package design using copper lead frame for

superior thermal and electrical capabilities.

High density cell design for extremely low R_DS(ON)

Exceptional on-resistance and maximum DC current

capability.

Compact industry standard SOT-23 surface mount

package.

____________________________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

NDS352P

-20

Units

Drain-Source Voltage

Gate-Source Voltage - Continuous

±12

Maximum Drain Current - Continuous

- Pulsed

(Note 1a)

±0.85

±10

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

0.46

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

250

°C/W

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Case

NDS352P Rev. F1

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I_D= -250 µA

V_DS= -16 V, V_GS= 0 V

-20

Zero Gate Voltage Drain Current

-5

µA

-20

T_J=125°C

I_GSSF

I_GSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

V_GS= 12 V, V_DS= 0 V

V_GS= -12 V, V_DS= 0 V

100

-100

ON CHARACTERISTICS (Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= -250 µA

V_GS= -4.5 V, I_D= -0.85 A

-0.8

-0.5

-1.6

-1.3

0.46

0.59

-2.5

-2.2

0.5

T_J=125°C

Static Drain-Source On-Resistance

R_DS(ON)

0.7

0.35

V_GS= -10 V, I_D= -1 A

V_GS= -4.5 V, V_DS= -5 V

V_DS= -5 V, I_D= -0.85 A

On-State Drain Current

-2

I_D(ON)

g_FS

Forward Transconductance

1.5

DYNAMIC CHARACTERISTICS

Input Capacitance

125

140

C_iss

C_oss

C_rss

V_DS= -10 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn - On Delay Time

Turn - On Rise Time

Turn - Off Delay Time

Turn - Off Fall Time

Total Gate Charge

V_DD= -10 V, I_D= -1 A,

V_GS= -10 V, R_GEN= 50 W

2.2

Q_g

Q_gs

Q_gd

V_DS= -10 V, I_D= -0.85 A,

V_GS= -5 V

Gate-Source Charge

Gate-Drain Charge

NDS352P Rev. F1

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol Parameter Conditions

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Min

Typ

Max

Units

I_S

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

-0.6

-5

I_SM

V_SD

Drain-Source Diode Forward Voltage

V_GS= 0 V, I_S= -0.85 A (Note 2)

-0.92

-1.2

Notes:

1. R_q_JAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_q_JCis guaranteed by

design while R_q_CAis determined by the user's board design.

_J- T

T_J- T

P_D

(t)

= I²_D(t) ´ R_{DS(ON )}

+R (t)

( )

Typical R_q_JAusing the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 250^oC/W when mounted on a 0.02 in²pad of 2oz cpper.

b. 270^oC/W when mounted on a 0.001 in²pad of 2oz cpper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDS352P Rev. F1

Typical Electrical Characteristics

1.8

1.6

1.4

1.2

-5

V_GS= -10V

-7.0

-5.5

V _GS= -3.5 V

-5.0

-4.0

-4

-4.5

-3

-4.0

-5.0

-2

-5.5

-3.5

-1

0.8

0.6

-7.0

-10

-3.0

-1

-2

-3

-4

-5

-1

-2

-3

-4

, DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage

1.4

1.3

1.2

1.1

1.8

1.6

1.4

1.2

V_GS= -4.5V

I_D= -0.85A

V _GS= -4.5V

= 125°C

25°C

-55°C

0.9

0.8

0.7

0.8

0.6

-50

-25

100

125

150

-1

-2

-3

-4

, JUNCTION TEMPERATURE (°C)

, DRAIN CURRENT (A)

Figure 4. On-Resistance Variation

with Drain Current and Temperature

Figure 3. On-Resistance Variation

with Temperature

-5

-4

-3

-2

-1

1.15

1.1

= -55°C

V_DS

= V_GS

V _DS= -10V

125

= -250µA

1.05

0.95

0.9

0.85

0.8

-50

-1

-2

-3

-4

-5

-6

-25

100

125

150

, GATE TO SOURCE VOLTAGE (V)

, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Threshold Variation

with Temperature

Figure 5. Transfer Characteristics

NDS352P Rev. F1

Typical Electrical Characteristics (continued)

1.15

V_GS= 0V

= 125°C

I_D= -250µA

1.1

0.5

25°C

1.05

-55°C

0.1

0.01

0.95

0.9

0.4

0.8

1.2

1.6

2.4

-50

-25

100

125

150

-V

, BODY DIODE FORWARD VOLTAGE (V)

, JUNCTION TEMPERATURE (°C)

Figure 8. Body Diode Forward Voltage Variation with

Source Current and Temperature

Figure 7. Breakdown Voltage Variation with

Temperature

500

-10

I _D= -850m A

300

200

-8

V_DS= -5V

-10

iss

-6

100

oss

-4

-2

f = 1 MHz

V_GS= 0 V

rss

0.1

0.2

-V

0.5

, DRAIN TO SOURCE VOLTAGE (V)

, GATE CHARGE (nC)

Figure 9. Capacitance Characteristics

Figure 10. Gate Charge Characteristics

V_DD

t_on

t_off

t_d(off)

t _d(on)

t_r

t_f

R_L

V_IN

90%

V_OUT

OUT

V_GS

10%

90%

R_GEN

DUT

50%

10%

INVERTED

PULSE WIDTH

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

NDS352P Rev. F1

Typical Electrical Characteristics (continued)

V _DS= -5V

T = -55°C

2.5

25°C

125°C

0.5

1.5

V _GS= -10V

SINGLE PULSE

T _A= 25°C

0.1

0.05

0.5

0.01

-1

-2

-3

-4

-5

0.1

0.2

0.5

- V

20 30

, DRAIN CURRENT (A)

, DRAIN-SOURCE VOLTAGE (V)

Figure 13. Transconductance Variation with

Drain Current and Temperature

Figure 14. Maximum Safe Operating Area

D = 0.5

0.5

0.2

0.1

0.2

0.1

(t) = r(t) * R

= 250 °C/W

0.05

0.02

0.01

0.02

0.01

P(pk)

t₁

t₂

Single Pulse

0.005

- T = P * R

(t)

0.002

0.001

Duty Cycle, D = t₁/t₂

0.0001

0.001

0.01

0.1

, TIME (sec)

100

300

Figure 15. Transient Thermal Response Curve

Note : Characterization performed using the conditions described in note 1c. Transient thermal response will

change depending on the circuit board design.

NDS352P Rev. F1

NDS352P相关文章

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NDS352P产品参数

型号:	NDS352P
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	NATIONAL SEMICONDUCTOR CORP
包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.21.00.95
风险等级：	5.73
Is Samacsys：	N
其他特性：	LOGIC LEVEL COMPATIBLE
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	0.85 A
最大漏极电流 (ID)：	0.85 A
最大漏源导通电阻：	0.35 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL
功耗环境最大值：	0.46 W
最大功率耗散 (Abs)：	500 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	DUAL
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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