NDS355AN各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号NDS355AN的概述

芯片NDS355AN的概述 NDS355AN是一款高性能的场效应管（MOSFET），广泛应用于各种电子电路中，特别是在开关电源、直流电机控制和低压驱动应用中。MOSFET是一种重要的半导体器件，其运行效率高、开关速度快，以及能在较低的导通电阻下工作，使得它在现代电子设计中扮演着不可或缺的角色。NDS355AN以其优秀的特性，成为许多设计工程师的首选。芯片NDS355AN的详细参数 NDS355AN的主要参数如下： - 类型：N沟道MOSFET - 漏源电压 (V_DS)：30V - 漏极电流 (I_D)：最大达到55A - 栅源阈值电压 (V_GS(th))：2V到4V - 最大功耗 (P_D)：40W - 导通电阻 (R_DS(on))：约为0.025Ω（@V_GS = 10V） - 输入电容 (C_GS)：约为1800pF - 输出电容 (C_GD)：约为800pF - 过温度保...

产品型号NDS355AN的Datasheet PDF文件预览

January 1997

NDS355AN

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

1.7A, 30 V, R_DS(ON)= 0.125 W @ V_GS= 4.5 V

SuperSOT^TM-3 N-Channel logic level enhancement mode

power field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-state

resistance. These devices are particularly suited for low voltage

applications in notebook computers, portable phones, PCMCIA

R_DS(ON)= 0.085 W @ V_GS= 10 V.

Industry standard outline SOT-23 surface mount package

using proprietary SuperSOT^TM-3 design for superior

thermal and electrical capabilities.

cards, and

other battery powered circuits where fast

High density cell design for extremely low R_DS(ON)

switching, and low in-line power loss are needed in a very small

outline surface mount package.

Exceptional on-resistance and maximum DC current

capability.

Compact industry standard SOT-23 surface mount

package.

_______________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

NDS355AN

Units

Drain-Source Voltage

Gate-Source Voltage - Continuous

±20

Maximum Drain Current - Continuous

- Pulsed

(Note 1a)

1.7

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

0.46

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

°C/W

R_q

NDS355AN Rev.C

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I_D= 250 µA

V_DS= 24 V, V_GS= 0 V

Zero Gate Voltage Drain Current

µA

T_J=125°C

I_GSSF

I_GSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

V_GS= 20 V_DS= 0 V

100

-100

V_GS= -20 V, V_DS= 0 V

ON CHARACTERISTICS (Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= 250 µA

V_GS= 4.5 V, I_D= 1.7 A

1.6

1.2

0.5

1.5

T_J=125°C

Static Drain-Source On-Resistance

0.105 0.125

0.16 0.23

R_DS(ON)

0.065 0.085

V_GS= 10 V, I_D= 1.9 A

V_GS= 4.5 V, V_DS= 5 V

V_DS= 5 V, I_D= 1.7 A

On-State Drain Current

I_D(ON)

g_FS

Forward Transconductance

3.5

DYNAMIC CHARACTERISTICS

Input Capacitance

195

135

C_iss

C_oss

C_rss

V_DS= 15 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

t_d(on)

t_r

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

Turn - On Delay Time

Turn - On Rise Time

Turn - Off Delay Time

Turn - Off Fall Time

Turn - On Delay Time

Turn - On Rise Time

Turn - Off Delay Time

Turn - Off Fall Time

Total Gate Charge

V_DD= 10 V, I_D= 1 A,

V_GS= 10 V, R_GEN= 6 W

V_DD= 5 V, I_D= 1 A,

V_GS= 4.5 V, R_GEN= 6 W

Q_g

Q_gs

Q_gd

V_DS= 10 V, I_D= 1.7 A,

V_GS= 5 V

3.5

0.8

1.7

Gate-Source Charge

Gate-Drain Charge

NDS355AN Rev.C

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol Parameter Conditions

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Min

Typ

Max

Units

I_S

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

0.42

I_SM

V_SD

Drain-Source Diode Forward Voltage

V_GS= 0 V, I_S=0.42 A (Note 2)

0.8

1.2

Notes:

1. R_q_JAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_q_JCis guaranteed by

design while R_q_CAis determined by the user's board design.

T - T

P_D

= I²_D(t) ´ R_{DS (ON )}

+R (t)

( )

(t)

Typical R_q_JAusing the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 250^oC/W when mounted on a 0.02 in²pad of 2oz copper.

b. 270^oC/W when mounted on a 0.001 in²pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDS355AN Rev.C

Typical Electrical Characteristics

1.8

1.6

1.4

1.2

=10V

7.0

6.0

5.0

4.5

4.0

V_GS= 3.5V

4.0

3.5

4.5

5.0

6.0

0.8

0.6

0.4

3.0

0.5

1.5

2.5

, DRAIN CURRENT (A)

, DRAIN-SOURCE VOLTAGE (V)

Figure 2. On-Resistance Variation

Figure 1. On-Region Characteristics.

with Drain Current and Gate Voltage.

1.8

1.6

1.4

1.2

1.6

1.4

1.2

ID = 1.6A

V_GS= 4.5 V

= 4.5V

T = 125°C

25°C

-55°C

0.8

0.6

0.4

0.8

0.6

-50

-25

100

125

150

, DRAIN CURRENT (A)

, JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation

Figure 4. On-Resistance Variation

with Temperature.

with Drain Current and Temperature.

1.2

1.1

V_DS= 5.0V

= V

= 250µA

0.9

0.8

0.7

0.6

T = -55°C

25°C

125°C

1.5

2.5

3.5

-50

-25

100

125

150

, GATE TO SOURCE VOLTAGE (V)

, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Threshold Variation

Figure 5. Transfer Characteristics.

with Temperature.

NDS355AN Rev.C

Typical Electrical Characteristics (continued)

1.12

I_D= 250µA

1.08

V_GS= 0V

T = 125°C

0.1

0.01

25°C

1.04

-55°C

0.001

0.0001

0.96

0.92

-50

-25

100

125

150

0.2

0.4

0.6

0.8

1.2

, JUNCTION TEMPERATURE (°C)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation with

Figure 8. Body Diode Forward Voltage Variation with

Temperature.

Source Current and Temperature.

500

V_DS= 5V

I_D= 1.6A

10V

300

200

iss

15V

100

oss

f = 1 MHz

V_GS= 0V

rss

0.1

0.2

0.5

20 30

, GATE CHARGE (nC)

, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics.

Figure 10. Gate Charge Characteristics.

V_DD

t_on

t_off

t_d(off)

t _d(on)

t_r

t_f

R_L

V_IN

90%

V_OUT

V_GS

OUT

R_GEN

10%

90%

DUT

INVERTED

50%

10%

PULSE WIDTH

Figure 11. Switching Test Circuit.

Figure 12. Switching Waveforms.

NDS355AN Rev.C

Typical Electrical Characteristics (continued)

V_DS= 5.0V

= -55°C

25°C

125°C

0.3

0.1

V_GS= 4.5V

SINGLE PULSE

R _JA=See Note1b

0.03

0.01

T = 25°C

0.1

0.2

0.5

20 30 50

, DRAI N-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

Figure 13. Transconductance Variation with Drain

Figure 14. Maximum Safe Operating Area.

Current and Temperature.

0.8

1.8

0.6

0.4

0.2

1.6

4.5"x5" FR-4 Board

= 25 ^o

1.4

1.2

Still Air

_GS= 4.5V

4.5"x5" FR-4 Board

T_A= 25^o

Still Air

0.1

0.2

0.3

0.4

0.1

0.2

0.3

0.4

2oz COPPER MOUNTING PAD AREA (in

)

2oz COPPER MOUNTING PAD AREA (in

)

Figue 15. SuperSOT^{TM _}3 Maximum

Figure 16. Maximum Steady-State Drain

Current versus Copper Mounting Pad Area.

Steady-State Power Dissipation versus Copper

Mounting Pad Area.

D = 0.5

0.5

(t) = r(t) * R

0.2

0.1

0.2

0.1

See Note 1b

qJA

0.05

P(pk)

0.02

0.01

0.02

0.01

Single Pulse

T - T = P * R

(t)

0.005

Duty Cycle, D = t /t

0.002

0.001

0.0001

0.001

0.01

0.1

t , TIME (sec)

100

300

Figure 17. Transient Thermal Response Curve.

Note : Characterization performed using the conditions described in note 1b. Transient thermal response will

change depending on the circuit board design.

NDS355AN Rev.C

NDS355AN相关文章

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NDS355AN产品参数

型号:	NDS355AN
是否Rohs认证：	符合
生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.7
Is Samacsys：	N
其他特性：	LOGIC LEVEL COMPATIBLE
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	0.0016 A
最大漏源导通电阻：	0.1 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
功耗环境最大值：	0.5 W
认证状态：	Not Qualified
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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