NDS8934现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号NDS8934的概述

NDS8934芯片的概述 NDS8934是一个功能强大的单片集成电路，广泛应用于各种电子设备，尤其是用于电源管理和信号处理的场合。近年来，随着智能设备和电动汽车等行业的快速发展，对高效集成电路的需求日益增加，使得NDS8934的应用愈加广泛。该芯片设计旨在提供高效能、低功耗和稳定的性能，适合于各种复杂的电子应用环境。 NDS8934的详细参数 NDS8934芯片的参数设计旨在确保其达到最高的性能标准。以下是其主要技术参数： - 工作电压范围：3.3V至30V - 工作温度范围：-40°C至125°C - 输出电流：最大能支持3A - 开关频率：可调，通常在100kHz至1MHz之间 - 效率：在不同负载下效率可达95%以上 - 封装类型：DPAK, TO-220 - 引脚数：5至8引脚，根据不同封装而异这些参数使得NDS8934可以在不同的功率需求和负载条件下保持稳定的表现，因此，能...

产品型号NDS8934的Datasheet PDF文件预览

March 1996

NDS8934

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-state

resistance, provide superior switching performance, and

withstand high energy pulses in the avalanche and

commutation modes. These devices are particularly

suited for low voltage applications such as notebook

computer power management and other battery powered

circuits where fast switching, low in-line power loss, and

resistance to transients are needed.

-3.8A, -20V. R_DS(ON)= 0.07W @ V_GS= -4.5V

R_DS(ON)= 0.1W @ V_GS= -2.7V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

Dual MOSFET in surface mount package.

_________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

NDS8934

Units

Drain-Source Voltage

Gate-Source Voltage

-20

-8

V_DSS

V_GSS

I_D

Drain Current

- Continuous

- Pulsed

(Note 1a)

-3.8

-15

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

Thermal Resistance, Junction-to-Case

NDS8934.SAM

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I_D= -250 µA

V_DS= -16 V, V_GS= 0 V

V_DS= -10 V, V_GS= 0 V, T_J= 70°C

V_GS= 8 V, V_DS= 0 V

-20

Zero Gate Voltage Drain Current

-1

-5

µA

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

100

-100

I_GSSF

I_GSSR

V_GS= -8 V, V_DS= 0 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

-0.5

-0.3

-0.7

-0.5

-1

V_GS(th)

V_DS= V_GS, I_D= -250 µA

V_GS= -4.5 V, I_D= -3.8 A

-0.8

0.07

0.14

0.1

T_J= 125°C

R_DS(ON)

Static Drain-Source On-Resistance

0.06

0.085

0.082

V_GS= -2.7 V, I_D= -3.2 A

V_GS= -4.5 V, V_DS= -5 V

V_GS= -2.7 V, V_DS= -5 V

V_DS= 10 V, I_D= -3.8 A

On-State Drain Current

-15

-5

I_D(on)

Forward Transconductance

g_FS

DYNAMIC CHARACTERISTICS

Input Capacitance

V_DS= -10 V, V_GS= 0 V,

f = 1.0 MHz

1120

470

iss

Output Capacitance

C_oss

C_rss

Reverse Transfer Capacitance

145

SWITCHING CHARACTERISTICS (Note 2)

Turn - On Delay Time

Turn - On Rise Time

Turn - Off Delay Time

Turn - Off Fall Time

Total Gate Charge

2.4

5.5

t_D(on)

V_DD= -5 V, I_D= -1 A,

V_GEN= -4.5 V, R_GEN= 6 W

t_D(off)

Q_g

V_DS= -10 V,

I_D= -3.8 A, V_GS= -4.5 V

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

NDS8934.SAM

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol Parameter Conditions

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Min

Typ

Max

Units

I_S

Maximum Continuous Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

-1.3

-1.2

-0.75

V_SD

Notes:

V_GS= 0 V, I_S= -1.3 A (Note 2)

1. R_q_JAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_q_JCis guaranteed by

design while R_q_CAis determined by the user's board design.

_J- T

T_J- T

P_D

(t)

= I²(t) ´ R_{DS (ON}

( )

)

( )

Typical R_q_JAfor single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 78^oC/W when mounted on a 0.5 in²pad of 2oz cpper.

b. 125^oC/W when mounted on a 0.02 in²pad of 2oz cpper.

c. 135^oC/W when mounted on a 0.003 in²pad of 2oz cpper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..

NDS8934.SAM

Typical Electrical Characteristics

1.8

1.6

1.4

1.2

-20

V_GS= -4.5V

-3.5

-3.0

-16

-2.7

V_GS= -2.5V

-12

-8

-4

-2.5

-2.7

-3.0

-3.5

-2.0

-4.0

-4.5

-16

-5.0

-1.5

0.8

-1

-2

-3

-4

-8

-12

-20

, DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

1.6

1.4

1.2

V_GS= -4.5V

I_D= -3.8A

V _GS= -4.5V

= 125°C

1.5

25°C

0.8

0.6

-55°C

0.5

-50

-25

100

125

150

-4

-8

-12

-16

-20

, JUNCTION TEMPERATURE (°C)

, DRAIN CURRENT (A)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.2

-20

-16

-12

-8

= -55°C

V_DS= -10V

V_DS= V_GS

25°C

125°C

1.1

I _D= -250µA

0.9

0.8

0.7

0.6

-4

-50

-25

100

125

150

-0.5

-1

-1.5

-2

-2.5

-3

-3.5

-4

, JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 6. Gate Threshold Variation with

Temperature.

Figure 5. Transfer Characteristics.

NDS8934.SAM

Typical Electrical Characteristics

1.1

I _D= -250µA

1.08

V_GS= 0V

1.06

1.04

1.02

= 125°C

25°C

0.1

0.01

-55°C

0.98

0.96

0.94

0.001

0.0001

-50

-25

100

125

150

0.2

0.4

0.6

0.8

1.2

1.4

1.6

, JUNCTION TEMPERATURE (°C)

-V

, BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation with

Temperature.

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

2000

I _D= -3.8A

1500

V_DS= -5.0V

iss

-10V

-15V

1000

800

oss

600

400

rss

f = 1 MHz

V_GS= 0V

200

100

0.1

0.2

-V

0.5

, DRAIN TO SOURCE VOLTAGE (V)

, GATE CHARGE (nC)

Figure 10. Gate Charge Characteristics.

Figure 9. Capacitance Characteristics.

V_DS= -10V

= -55°C

25°C

125°C

-4

-8

-12

-16

-20

, DRAIN CURRENT (A)

Figure 11. Transconductance Variation with Drain

Current and Temperature.

NDS8934.SAM

Typical Thermal Characteristics

4.5

2.5

Total Power for Dual Operation

3.5

Power for Single Operation

1.5

4.5"x5" FR-4 Board

T_A

25^o

Still Air

2.5

4.5"x5" FR-4 Board

T_A

25 ^o

Still Air

V_GS

-4.5V

0.5

0.2

0.4

0.6

0.8

0.1

0.2

0.3

0.4

0.5

2oz COPPER MOUNTING PAD AREA (in ²

)

2oz COPPER MOUNTING PAD AREA (in

)

Figure 12. SO-8 Dual Package Maximum

Figure 13. Maximum Steady-State Drain

Current versus Copper Mounting Pad

Area.

Steady-State Power Dissipation versus

Copper Mounting Pad Area.

0.3

0.1

_GS= -4.5V

SINGLE PULSE

= See Note 1c

0.03

0.01

T_A= 25°C

0.1

0.2

0.5

20 30

- V

, DRAIN-SOURCE VOLTAGE (V)

Figure 14. Maximum Safe Operating Area.

D = 0.5

0.2

0.5

0.2

0.1

(t) = r(t) * R

= See Note 1c

0.1

0.05

P(pk)

0.02

0.01

Single Pulse

0.02

0.01

0.005

- T

= P * R

(t)

Duty Cycle, D = t / t

0.002

0.001

0.0001

0.001

0.01

0.1

100

300

t₁, TIME (sec)

Figure 15. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change

depending on the circuit board design.

NDS8934.SAM

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NDS8934产品参数

型号:	NDS8934
生命周期：	Obsolete
IHS 制造商：	ON SEMICONDUCTOR
包装说明：	,
Reach Compliance Code：	compliant
Factory Lead Time：	1 week
风险等级：	5.72
Base Number Matches：	1

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