NDS8947现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号NDS8947的概述

芯片NDS8947的概述 NDS8947是一款高性能的半导体器件，广泛应用于多种电子设备中。作为一款集成电路，NDS8947致力于提供高效率、低功耗的解决方案，满足现代电子产品日益增长的性能需求。该芯片在数据处理、信号传输和功率管理方面表现优异，适合于汽车电子、工业自动化、消费电子等多个领域。在此文中，将详细探讨NDS8947的参数、厂家信息、包装与封装、引脚配置、电路图说明及其使用案例。芯片NDS8947的详细参数 NDS8947的技术规格包括但不限于以下几项主要参数： 1. 供电电压：NDS8947支持宽范围的供电电压，通常在3.3V至5V之间，这使得其在多种电源条件下均可稳定工作。 2. 工作温度范围：该芯片具备广泛的工作温度范围，通常在-40℃到85℃，适用于各种环境条件，特别是严苛的工业应用。 3. 处理速度：NDS8947的处理速度高达数百MHz，能够满足高数据流...

产品型号NDS8947的Datasheet PDF文件预览

March 1996

NDS8947

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

-4A, -30V. R_DS(ON)= 0.065W @ V_GS= -10V

R_DS(ON)= 0.1W @ V_GS= -4.5V.

High density cell design for extremely low R_DS(ON)

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

High power and current handling capability in a widely used

surface mount package.

Dual MOSFET in surface mount package.

________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

NDS8947

-30

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

-20

Drain Current

- Continuous

- Pulsed

(Note 1a)

-4

-15

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

P_D

(Note 1a)

(Note 1b)

(Note 1c)

0.9

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

NDS8947.SAM

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I_D= -250 µA

V_DS= -24 V, V_GS= 0 V

-30

Zero Gate Voltage Drain Current

-1

µA

-10

T_J= 55°C

I_GSSF

I_GSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

V_GS= 20 V, V_DS= 0 V

V_GS= -20 V, V_DS= 0 V

100

-100

ON CHARACTERISTICS (Note 2)

V_GS(th)

Gate Threshold Voltage

V_DS= V_GS, I_D= -250 µA

V_GS= -10 V, I_D= -4.0 A

-1

-1.6

-1.2

-2.8

-2.2

-0.7

T_J= 125°C

Static Drain-Source On-Resistance

0.052 0.065

R_DS(ON)

0.075

0.085

0.13

0.1

V_GS= -4.5 V, I_D= -3.3 A

V_GS= -10 V, V_DS= -5 V

V_GS= -4.5 V, V_DS= -5 V

V_DS= -10 V, I_D= -4.0 A

I_D(on)

On-State Drain Current

-15

-5

g_FS

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

690

430

160

C_iss

C_oss

C_rss

V_DS= -15 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

Turn - On Delay Time

Turn - On Rise Time

Turn - Off Delay Time

Turn - Off Fall Time

Total Gate Charge

t_D(on)

t_r

t_D(off)

t_f

V_DD= -10 V, I_D= -1 A,

V_GEN= -10 V, R_GEN= 6 W

3.1

5.1

Q_g

Q_gs

Q_gd

V_DS= -10 V,

I_D= -4.0 A, V_GS= -10 V

Gate-Source Charge

Gate-Drain Charge

NDS8947.SAM

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol Parameter Conditions

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Min

Typ

Max

Units

I_S

Maximum Continuous Drain-Source Diode Forward Current

-1.3

-1.2

100

Drain-Source Diode Forward Voltage

Reverse Recovery Time

-0.85

V_SD

t_rr

V_GS= 0 V, I_S= -1.3 A (Note 2)

V_GS= 0 V, I_F= -1.3 A, dI_F/dt = 100 A/µs

Notes:

1. R_q_JAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_q_JCis guaranteed by

design while R_q_CAis determined by the user's board design.

- T

T - T

J A

P_D

(t)

= I²(t) ´ R_DS

( )

(

)

+R (t)

C qCA

Typical R_q_JAfor single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 78^oC/W when mounted on a 0.5 in²pad of 2oz copper.

b. 125^oC/W when mounted on a 0.02 in²pad of 2oz copper.

c. 135^oC/W when mounted on a 0.003 in²pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..

NDS8947.SAM

Typical Electrical Characteristics

-20

2.5

V_GS= -10V

V_GS= -3.5V

-6.0

-5.0

- 4.0

-15

-4.5

-4.0

-5.0

-10

1.5

-6.0

-10

-3.5

-5

-3.0

0.5

-1

-2

-3

-4

-8

-12

-16

-20

, DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

1.6

1.4

1.2

I_D= -4.0A

V_GS= -10V

V _GS= -10V

1.5

= 125°C

25°C

0.8

0.6

-55°C

0.5

-50

-25

100

125

150

-4

-8

-12

-16

-20

, JUNCTION TEMPERATURE (°C)

, DRAIN CURRENT (A)

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 3. On-Resistance Variation with

Temperature.

1.2

-20

-15

-10

-5

= -55°C

V_DS= -10V

V_DS= V_GS

1.1

125°C

25°C

I _D= -250µA

0.9

0.8

0.7

0.6

-50

-25

100

125

150

-1

-2

-3

-4

-5

-6

, JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 6. Gate Threshold Variation with

Temperature.

Figure 5. Transfer Characteristics.

NDS8947.SAM

Typical Electrical Characteristics

1.1

V_GS= 0V

I _D= -250µA

1.08

1.06

1.04

1.02

= 125°C

0.1

25°C

-55°C

0.98

0.96

0.94

0.01

0.001

-50

-25

100

125

150

0.4

0.8

1.2

1.6

, JUNCTION TEMPERATURE (°C)

-V

, BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation with

Temperature.

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

2000

I_D= -4.0A

V_DS= -5V

-20V

1000

500

iss

-10V

oss

300

200

f = 1 MHz

V_GS= 0V

rss

100

0.1

0.2

0.5

, GATE CHARGE (nC)

-V

, DRAIN TO SOURCE VOLTAGE (V)

Figure 10. Gate Charge Characteristics.

Figure 9. Capacitance Characteristics.

= -55°C

V_DS= -10V

25°C

125°C

-4

-8

-12

-16

-20

, DRAIN CURRENT (A)

Figure 11. Transconductance Variation with Drain

Current and Temperature.

NDS8947.SAM

Typical Thermal Characteristics

4.5

2.5

Total Power for Dual Operation

1.5

3.5

Power for Single Operation

4.5"x5" FR-4 Board

T_A

25^o

Still Air

2.5

4.5"x5" FR-4 Board

T_A

25 ^o

Still Air

V_GS

-10V

0.5

0.1

0.2

0.3

0.4

0.5

0.2

0.4

0.6

0.8

2oz COPPER MOUNTING PAD AREA (in ²

)

2oz COPPER MOUNTING PAD AREA (in

)

Figure 12. SO-8 Dual Package Maximum

Steady-State Power Dissipation versus

Copper Mounting Pad Area.

Figure 13. Maximum Steady- State Drain

Current versus Copper Mounting Pad

Area.

0.5

V_GS= -10V

SINGLE PULSE

0.1

= See Note 1c

0.05

T_A= 25°C

0.01

0.1

0.2

0.5

- V_DS, DRAIN-SOURCE CURRENT (V)

Figure 14. Maximum Safe Operating Area.

D = 0.5

0.2

0.5

0.2

0.1

(t) = r(t) * R

= See Note 1c

0.1

0.05

P(pk)

0.02

0.01

Single Pulse

0.02

0.01

0.005

- T

= P * R

(t)

Duty Cycle, D = t / t

0.002

0.001

0.0001

0.001

0.01

0.1

100

300

t₁, TIME (sec)

Figure 15. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change

depending on the circuit board design.

NDS8947.SAM

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging

Configuration: Figure 1.0

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is

ELECTROSTATIC

SENSITIVE DEVICES

DO NO

RO NG

CTROS

ATIC

made from dissipative (carbon filled) polycarbonate

CTRO

AGN

AG NE

R R ADIO ACTIVE FI ELD S

TNR DATE

PT NUMB E

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

2,500 units per 13" or 330cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 500 units per 7" or

177cm diameter reel. This and some other options are

further described in the Packaging Information table.

PEEL STRENGTH MIN ______________gms

MAX _____________gms

Antistatic Cover Tape

ESD Label

These full reels are individually barcode labeled and

placed inside

a standard intermediate box (illustrated in

figure 1.0) made of recyclable corrugated brown paper.

One box contains two reels maximum. And these boxes

are placed inside

comes in different sizes depending on the number of parts

shipped.

a barcode labeled shipping box which

Static Dissipative

Embossed Carrier Tape

F63TNR

Label

NDS

9959

852

Customized

Label

Pin 1

SOIC (8lds) Packaging Information

Standard

L86Z

F011

D84Z

Packaging Option

(no flow code)

SOIC-8 Unit Orientation

Packaging type

TNR

2,500

Rail/Tube

TNR

4,000

TNR

500

Qty per Reel/Tube/Bag

Reel Size

13" Dia

7" Dia

Box Dimension (mm)

Max qty per Box

343x64x343 530x130x83 343x64x343 184x187x47

5,000

0.0774

0.6060

30,000

0.0774

8,000

0.0774

0.9696

1,000

0.0774

0.1182

Weight per unit (gm)

Weight per Reel (kg)

Note/Comments

343mm x 342mm x 64mm

Standard Intermediate box

ESD Label

F63TNR Label sample

F63TNLabel

ESD Label

F63TN Label

LOT: CBVK741B019

FSID: FDS9953A

QTY: 2500

SPEC:

D/C1: D9842

D/C2:

QTY1:

QTY2:

SPEC REV:

CPN:

N/F: F

(F63TNR)3

SOIC(8lds) Tape Leader and Trailer

Configuration: Figure 2.0

Carrier Tape

Cover Tape

Components

Trailer Tape

Leader Tape

640mm minimum or

80 empty pockets

1680mm minimum or

210 empty pockets

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC(8lds) Embossed Carrier Tape

Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg type

0.450

+/-

0.150

(8lds)

SOIC

(12mm)

6.50

+/-0.10

5.30

+/-0.10

12.0

+/-0.3

1.55

+/-0.05

1.60

+/-0.10

1.75

+/-0.10

10.25

min

5.50

+/-0.05

8.0

+/-0.1

4.0

+/-0.1

2.1

+/-0.10

9.2

+/-0.3

0.06

+/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

0.5mm

maximum

20 deg maximum

Typical

component

cavity

center line

0.5mm

maximum

20 deg maximum component rotation

Typical

component

center line

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Component Rotation

SOIC(8lds) Reel Configuration: Figure 4.0

W1 Measured at Hub

Dim A

Max

Dim A

max

See detail AA

Dim N

7"Diameter Option

B Min

Dim C

See detail AA

Dim D

min

13" Diameter Option

W2 max Measured at Hub

DETAIL AA

Dim W2

Dimensions are in inches and millimeters

Reel

Option

Tape Size

12mm

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W3 (LSL-USL)

7.00

177.8

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

2.165

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.469 – 0.606

11.9 – 15.4

7" Dia

13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

7.00

178

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.469 – 0.606

11.9 – 15.4

12mm

13" Dia

1998 Fairchild Semiconductor Corporation

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0774

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

SyncFET™

TinyLogic™

UHC™

CROSSVOLT™

E²CMOS^TM

VCX™

FACT™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. D

NDS8947相关文章

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NDS8947产品参数

型号:	NDS8947
是否Rohs认证：	不符合
生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code：	unknown
风险等级：	5.82
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最大漏极电流 (Abs) (ID)：	4 A
最大漏源导通电阻：	0.065 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0
元件数量：	2
端子数量：	8
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL
功耗环境最大值：	2 W
最大功率耗散 (Abs)：	2 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	DUAL
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号NDS8947的概述

产品型号NDS8947的Datasheet PDF文件预览

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