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    产品型号NDS9430的Datasheet PDF文件预览

    May 2002  
    NDS9430  
    30V P-Channel PowerTrench MOSFET  
    General Description  
    Features  
    This P-Channel MOSFET is a rugged gate version of  
    Fairchild Semiconductor’s advanced PowerTrench  
    process. It has been optimized for power management  
    applications requiring a wide range of gate drive voltage  
    ratings (4.5V – 20V).  
    • –5.3 A, –30 V  
    RDS(ON) = 60 mΩ @ VGS = –10 V  
    RDS(ON) =100 mΩ @ VGS = –4.5 V  
    • Low gate charge  
    • Fast switching speed  
    Applications  
    • Power management  
    • Load switch  
    • High performance trench technology for extremely  
    low RDS(ON)  
    • Battery protection  
    • High power and current handling capability  
    D
    5
    6
    7
    8
    4
    3
    2
    1
    D
    D
    D
    G
    SO-8  
    S
    S
    S
    Pin 1  
    Absolute Maximum Ratings TA=25oC unless otherwise noted  
    Symbol  
    VDSS  
    Parameter  
    Drain-Source Voltage  
    Ratings  
    Units  
    –30  
    V
    V
    A
    VGSS  
    Gate-Source Voltage  
    ±20  
    ID  
    Drain Current – Continuous  
    – Pulsed  
    (Note 1a)  
    –5.3  
    –20  
    Power Dissipation for Single Operation  
    (Note 1a)  
    (Note 1b)  
    (Note 1c)  
    2.5  
    PD  
    W
    1.2  
    1
    TJ, TSTG  
    Operating and Storage Junction Temperature Range  
    –55 to +175  
    °C  
    Thermal Characteristics  
    Thermal Resistance, Junction-to-Ambient  
    (Note 1a)  
    (Note 1c)  
    (Note 1)  
    50  
    125  
    25  
    RθJA  
    RθJA  
    RθJC  
    °C/W  
    Thermal Resistance, Junction-to-Ambient  
    Thermal Resistance, Junction-to-Case  
    Package Marking and Ordering Information  
    Device Marking  
    Device  
    Reel Size  
    Tape width  
    Quantity  
    NDS9430  
    NDS9430  
    13’’  
    12mm  
    2500 units  
    NDS9430 Rev B  
    2002 Fairchild Semiconductor Corporation  
    Electrical Characteristics  
    TA = 25°C unless otherwise noted  
    Symbol  
    Parameter  
    Test Conditions  
    Min Typ Max Units  
    Off Characteristics  
    BVDSS  
    Drain–Source Breakdown Voltage  
    –30  
    V
    VGS = 0 V, ID = –250 µA  
    ∆BVDSS  
    ∆TJ  
    Breakdown Voltage Temperature  
    Coefficient  
    –23  
    ID = –250 µA, Referenced to 25°C  
    mV/°C  
    IDSS  
    Zero Gate Voltage Drain Current  
    VDS = –24 V,  
    VGS = 0 V  
    –1  
    µA  
    nA  
    nA  
    IGSSF  
    IGSSR  
    Gate–Body Leakage, Forward  
    Gate–Body Leakage, Reverse  
    VGS = 20 V,  
    VGS = –20 V  
    VDS = 0 V  
    VDS = 0 V  
    100  
    –100  
    On Characteristics  
    (Note 2)  
    VGS(th)  
    Gate Threshold Voltage  
    –1  
    –1.7  
    4.5  
    –3  
    V
    VDS = VGS, ID = –250 µA  
    ∆VGS(th)  
    ∆TJ  
    Gate Threshold Voltage  
    Temperature Coefficient  
    ID = –250 µA, Referenced to 25°C  
    mV/°C  
    mΩ  
    RDS(on)  
    Static Drain–Source  
    On–Resistance  
    VGS = –10 V,  
    ID = –5.3 A  
    42  
    65  
    57  
    60  
    100  
    73  
    VGS = –4.5 V, ID = –2 A  
    VGS= –10 V, ID = –5.3 A,TJ=125°C  
    ID(on)  
    gFS  
    On–State Drain Current  
    VGS = –10 V,  
    VDS = –5 V,  
    VDS = –5 V  
    ID = –5.3 A  
    –20  
    A
    S
    Forward Transconductance  
    10  
    Dynamic Characteristics  
    Ciss  
    Coss  
    Crss  
    Input Capacitance  
    528  
    132  
    70  
    pF  
    pF  
    pF  
    VDS = –15 V,  
    f = 1.0 MHz  
    V GS = 0 V,  
    Output Capacitance  
    Reverse Transfer Capacitance  
    Switching Characteristics (Note 2)  
    td(on)  
    tr  
    td(off)  
    tf  
    Turn–On Delay Time  
    Turn–On Rise Time  
    Turn–Off Delay Time  
    Turn–Off Fall Time  
    Total Gate Charge  
    Gate–Source Charge  
    Gate–Drain Charge  
    7
    13  
    14  
    9
    14  
    24  
    25  
    17  
    14  
    ns  
    ns  
    VDD = –15 V,  
    VGS = –10 V,  
    ID = –1 A,  
    RGEN = 6 Ω  
    ns  
    ns  
    Qg  
    Qgs  
    Qgd  
    10  
    2.2  
    2
    nC  
    nC  
    nC  
    V
    DS = –15 V,  
    ID = –4 A,  
    VGS = –10 V  
    Drain–Source Diode Characteristics and Maximum Ratings  
    IS  
    Maximum Continuous Drain–Source Diode Forward Current  
    –2.1  
    –1.2  
    A
    V
    Drain–Source Diode Forward  
    VSD  
    V
    GS = 0 V, IS = –2.1 A (Note 2)  
    –0.8  
    Voltage  
    Notes:  
    1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of  
    the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.  
    a) 50°C/W when  
    mounted on a 1in2  
    pad of 2 oz copper  
    b) 105°C/W when  
    mounted on a .04 in2  
    pad of 2 oz copper  
    c) 125°C/W when mounted on a  
    minimum pad.  
    Scale 1 : 1 on letter size paper  
    2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%  
    NDS9430 Rev B  
    Typical Characteristics  
    2
    1.8  
    1.6  
    1.4  
    1.2  
    1
    30  
    VGS = -10V  
    -6.0V  
    -5.0V  
    VGS=-4.0V  
    -4.5V  
    20  
    10  
    0
    -4.0V  
    -4.0V  
    -5.0V  
    -6.0V  
    -7.0V  
    -3.5V  
    -8.0V  
    -10V  
    -3.0V  
    0.8  
    0
    1
    2
    3
    4
    5
    6
    0
    6
    12  
    18  
    24  
    30  
    -VDS, DRAIN TO SOURCE VOLTAGE (V)  
    -ID, DRAIN CURRENT (A)  
    Figure 1. On-Region Characteristics.  
    Figure 2. On-Resistance Variation with  
    Drain Current and Gate Voltage.  
    0.25  
    1.6  
    ID = -5.3A  
    GS = -10V  
    ID = -2.8A  
    V
    0.2  
    0.15  
    0.1  
    1.4  
    1.2  
    1
    TA = 125oC  
    TA = 25oC  
    0.8  
    0.6  
    0.05  
    0
    -50  
    -25  
    0
    25  
    50  
    75  
    100  
    125  
    150  
    175  
    2
    4
    6
    8
    10  
    TJ, JUNCTION TEMPERATURE (oC)  
    -VGS, GATE TO SOURCE VOLTAGE (V)  
    Figure 3. On-Resistance Variation with  
    Temperature.  
    Figure 4. On-Resistance Variation with  
    Gate-to-Source Voltage.  
    15  
    12  
    9
    100  
    25oC  
    VDS = -5V  
    TA = -55oC  
    VGS =0V  
    10  
    TA = 125oC  
    125oC  
    1
    25oC  
    0.1  
    6
    -55oC  
    0.01  
    3
    0.001  
    0
    0.0001  
    1
    1.5  
    2
    2.5  
    3
    3.5  
    4
    4.5  
    0
    0.2  
    0.4  
    0.6  
    0.8  
    1
    1.2  
    1.4  
    -VGS, GATE TO SOURCE VOLTAGE (V)  
    -VSD, BODY DIODE FORWARD VOLTAGE (V)  
    Figure 5. Transfer Characteristics.  
    Figure 6. Body Diode Forward Voltage Variation  
    with Source Current and Temperature.  
    NDS9430 Rev B  
    Typical Characteristics  
    10  
    800  
    700  
    600  
    500  
    400  
    300  
    200  
    100  
    0
    ID = -5.3A  
    f = 1 MHz  
    GS = 0 V  
    VDS = -5V  
    -10V  
    V
    8
    6
    4
    2
    0
    -15V  
    CISS  
    COSS  
    CRSS  
    0
    2
    4
    6
    8
    10  
    0
    5
    10  
    15  
    20  
    25  
    30  
    Qg, GATE CHARGE (nC)  
    -VDS, DRAIN TO SOURCE VOLTAGE (V)  
    Figure 7. Gate Charge Characteristics.  
    Figure 8. Capacitance Characteristics.  
    100  
    50  
    40  
    30  
    20  
    10  
    0
    SINGLE PULSE  
    RθJA = 125°C/W  
    TA = 25°C  
    100µs  
    RDS(ON) LIMIT  
    1ms  
    10ms  
    100ms  
    1s  
    10  
    1
    10s  
    DC  
    VGS = -10V  
    SINGLE PULSE  
    RθJA = 125oC/W  
    TA = 25oC  
    0.1  
    0.01  
    0.1  
    1
    10  
    100  
    0.001  
    0.01  
    0.1  
    1
    10  
    100  
    1000  
    -VDS, DRAIN-SOURCE VOLTAGE (V)  
    t1, TIME (sec)  
    Figure 9. Maximum Safe Operating Area.  
    Figure 10. Single Pulse Maximum  
    Power Dissipation.  
    1
    D = 0.5  
    RθJA(t) = r(t) + RθJA  
    0.2  
    R
    θJA = 125oC/W  
    0.1  
    0.1  
    0.05  
    0.02  
    P(pk)  
    t1  
    0.01  
    t2  
    0.01  
    TJ - TA = P * RθJA(t)  
    Duty Cycle, D = t1 / t2  
    SINGLE PULSE  
    0.001  
    0.0001  
    0.001  
    0.01  
    0.1  
    1
    10  
    100  
    1000  
    t1, TIME (sec)  
    Figure 11. Transient Thermal Response Curve.  
    Thermal characterization performed using the conditions described in Note 1c.  
    Transient thermal response will change depending on the circuit board design.  
    NDS9430 Rev B  
    TRADEMARKS  
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
    not intended to be an exhaustive list of all such trademarksꢀ  
    â
    â
    SILENT SWITCHER  
    SMARTSTART™  
    SPM™  
    STAR*POWER™  
    Stealth™  
    SuperSOT™-3  
    SuperSOT™-6  
    SuperSOT™-8  
    SyncFET™  
    UHC™  
    UltraFET  
    VCX™  
    FAST  
    ACEx™  
    Bottomless™  
    CoolFET™  
    CROSSVOLT™  
    DenseTrench™  
    DOME™  
    MICROWIRE™  
    OPTOLOGIC  
    OPTOPLANAR™  
    PACMAN™  
    POP™  
    â
    â
    FASTr™  
    FRFET™  
    GlobalOptoisolator™  
    GTO™  
    HiSeC™  
    Power247™  
    I2C™  
    â
    EcoSPARK™  
    PowerTrench  
    E2CMOSTM  
    ISOPLANAR™  
    LittleFET™  
    MicroFET™  
    MicroPak™  
    QFET™  
    QS™  
    QT Optoelectronics™  
    Quiet Series™  
    EnSignaTM  
    TinyLogic™  
    TruTranslation™  
    FACT™  
    FACT Quiet Series™  
    STAR*POWER is used under license  
    DISCLAIMER  
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
    NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD  
    DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
    OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
    RIGHTS, NOR THE RIGHTS OF OTHERSꢀ  
    LIFE SUPPORT POLICY  
    FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
    DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ  
    As used herein:  
    1ꢀ Life support devices or systems are devices or  
    systems which, (a) are intended for surgical implant into  
    the body, or (b) support or sustain life, or (c) whose  
    failure to perform when properly used in accordance  
    with instructions for use provided in the labeling, can be  
    reasonably expected to result in significant injury to the  
    userꢀ  
    2ꢀ A critical component is any component of a life  
    support device or system whose failure to perform can  
    be reasonably expected to cause the failure of the life  
    support device or system, or to affect its safety or  
    effectivenessꢀ  
    PRODUCT STATUS DEFINITIONS  
    Definition of Terms  
    Datasheet Identification  
    Product Status  
    Definition  
    Advance Information  
    Formative or  
    In Design  
    This datasheet contains the design specifications for  
    product developmentꢀ Specifications may change in  
    any manner without noticeꢀ  
    Preliminary  
    First Production  
    This datasheet contains preliminary data, and  
    supplementary data will be published at a later dateꢀ  
    Fairchild Semiconductor reserves the right to make  
    changes at any time without notice in order to improve  
    designꢀ  
    No Identification Needed  
    Obsolete  
    Full Production  
    This datasheet contains final specificationsꢀ Fairchild  
    Semiconductor reserves the right to make changes at  
    any time without notice in order to improve designꢀ  
    Not In Production  
    This datasheet contains specifications on a product  
    that has been discontinued by Fairchild semiconductorꢀ  
    The datasheet is printed for reference information onlyꢀ  
    Revꢀ H5  
    配单直通车
    NDS9430产品参数
    型号:NDS9430
    生命周期：Obsolete
    包装说明：,
    Reach Compliance Code：compliant
    风险等级：5.68
    Is Samacsys：N
    Base Number Matches：1
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