NGB8206NG应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

NGB8206N

Ignition IGBT

20 A, 350 V, N−Channel D²PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Overvoltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

http://onsemi.com

20 AMPS, 350 VOLTS

V_CE(on)= 1.3 V @

I_C= 10 A, V_GE. 4.5 V

Features

• Ideal for Coil−on−Plug and Driver−on−Coil Applications

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage Clamp Limits

Stress Applied to Load

C

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to Logic or

Microprocessor Devices

R

G

• Low Saturation Voltage

R

GE

• High Pulsed Current Capability

• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R

• Pb−Free Packages are Available

)

G

GE

E

MARKING DIAGRAM

Applications

4 Collector

• Ignition Systems

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

GB

8206NG

AYWW

J

1

Rating

Collector−Emitter Voltage

Collector−Gate Voltage

Gate−Emitter Voltage

Symbol

Value

390

Unit

V

2

D PAK

V

CES

CER

CASE 418B

STYLE 4

1

Gate

3

V

390

V

Emitter

2

V

$15

V

GE

Collector

Collector Current−Continuous

I

20

50

A

C

DC

AC

GB8206N = Device Code

@ T = 25°C − Pulsed

C

A

= Assembly Location

Continuous Gate Current

I

1.0

20

mA

kV

G

Y

= Year

WW

G

= Work Week

= Pb−Free Package

Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)

ESD (Charged−Device Model)

ESD

2.0

ESD (Human Body Model)

R = 1500 W, C = 100 pF

kV

ORDERING INFORMATION

8.0

†

50 Units / Rail

Device

Package

Shipping

ESD (Machine Model) R = 0 W, C = 200 pF

ESD

500

V

2

NGB8206N

D PAK

Total Power Dissipation @ T = 25°C

P

150

1.0

W

W/°C

C

D

Derate above 25°C

2

NGB8206NG

D PAK

(Pb−Free)

Operating & Storage Temperature Range

T , T

−55 to

+175

°C

J

stg

2

NGB8206NT4

D PAK

800 / Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

2

NGB8206NT4G

D PAK

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

©

Semiconductor Components Industries, LLC, 2006

1

Publication Order Number:

August, 2006 − Rev. 6

NGB8206N/D

NGB8206N

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T ≤ 175°C)

J

Characteristic

Symbol

Value

Unit

Single Pulse Collector−to−Emitter Avalanche Energy

E

mJ

AS

V

= 50 V, V = 5.0 V, Pk I = 16.7 A, L = 1.8 mH, R = 1 kW Starting T = 25°C

250

200

180

CC

GE

L

g

J

= 50 V, V = 5.0 V, Pk I = 14.9 A, L = 1.8 mH, R = 1 kW Starting T = 150°C

g

J

= 50 V, V = 5.0 V, Pk I = 14.1 A, L = 1.8 mH, R = 1 kW Starting T = 175°C

GE

g

J

Reverse Avalanche Energy

= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C

E

mJ

AS(R)

V

2000

CC

GE

L

J

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case

R

1.0

62.5

275

°C/W

°C

q

JC

JA

L

Thermal Resistance, Junction−to−Ambient (Note 1)

R

q

Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2)

T

1. When surface mounted to an FR4 board using the minimum recommended pad size.

2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.

ELECTRICAL CHARACTERISTICS

Characteristic

OFF CHARACTERISTICS

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

Collector−Emitter Clamp Voltage

BV

I

= 2.0 mA

= 10 mA

T = −40°C to 175°C

325

340

350

365

375

390

V

CES

C

J

I

T = −40°C to 175°C

J

C

Zero Gate Voltage Collector Current

I

V

= 15 V,

CE

GE

mA

CES

T = 25°C

J

0.1

1.0

V

= 0 V

T = 25°C

0.5

1.0

0.4

30

1.5

25

10

100*

5.0

39

J

V

= 175 V,

GE

CE

T = 175°C

J

V

= 0 V

T = −40°C

J

0.8

35

Reverse Collector−Emitter Clamp Voltage

Reverse Collector−Emitter Leakage Current

B

T = 25°C

J

V

VCES(R)

T = 175°C

35

39

45*

37

I

= −75 mA

= −24 V

J

C

T = −40°C

J

30

33

I

T = 25°C

J

0.05

1.0

0.005

12

0.25

12.5

0.03

12.5

300

70

0.5

25

mA

CES(R)

T = 175°C

J

V

CE

T = −40°C

J

0.25

14

Gate−Emitter Clamp Voltage

Gate−Emitter Leakage Current

Gate Resistor (Optional)

BV

I

= $5.0 mA

T = −40°C to 175°C

V

mA

W

GES

G

J

I

V

= $5.0 V

T = −40°C to 175°C

200

350*

GES

GE

J

R

G

T = −40°C to 175°C

J

Gate−Emitter Resistor

R

GE

T = −40°C to 175°C 14.25

J

16

25

kW

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

T = 25°C

1.5

0.7

1.7

3.8

1.8

1.0

2.0

4.6

2.1

1.3

V

GE(th)

J

I

= 1.0 mA,

C

V

T = 175°C

J

= V

GE

CE

T = −40°C

J

2.3*

6.0

Threshold Temperature Coefficient (Negative)

mV/°C

*Maximum Value of Characteristic across Temperature Range.

3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

http://onsemi.com

2

NGB8206N

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

ON CHARACTERISTICS (Note 3)

Collector−to−Emitter On−Voltage

V

T = 25°C

0.95

0.70

1.0

1.15

0.95

1.30

1.25

1.05

1.4

1.35

1.15

1.40

1.45

1.25

1.50

1.4

V

CE(on)

J

I

= 6.5 A,

GE

C

T = 175°C

J

V

= 3.7 V

T = −40°C

J

T = 25°C

J

0.95

0.8

I

V

= 9.0 A,

C

T = 175°C

J

= 3.9 V

GE

T = −40°C

J

1.1

T = 25°C

J

0.85

0.7

1.15

0.95

1.3

I

V

= 7.5 A,

C

T = 175°C

J

1.2

= 4.5 V

GE

T = −40°C

J

1.0

1.6*

1.6

T = 25°C

J

1.0

1.3

I

= 10 A,

C

T = 175°C

0.8

1.05

1.4

J

V

= 4.5 V

GE

T = −40°C

J

1.1

1.7*

1.7

T = 25°C

J

1.15

1.0

1.45

1.3

I

= 15 A,

= 4.5 V

C

T = 175°C

J

1.55

1.8*

1.9

V

GE

T = −40°C

J

1.25

1.3

1.55

1.6

T = 25°C

J

I

= 20 A,

C

T = 175°C

J

1.2

1.5

1.8

V

= 4.5 V

GE

T = −40°C

1.4

1.75

18

2.0*

25

J

Forward Transconductance

gfs

I

= 6.0 A,

CE

T = 25°C

J

10

Mhos

pF

C

V

= 5.0 V

DYNAMIC CHARACTERISTICS

Input Capacitance

C

ISS

1100

70

1300

80

1500

90

f = 10 kHz, V

25 V

=

CE

Output Capacitance

C

OSS

C

RSS

T = 25°C

J

Transfer Capacitance

18

20

22

SWITCHING CHARACTERISTICS

Turn−Off Delay Time (Resistive)

t

T = 25°C

J

6.0

4.0

8.0

3.0

5.0

1.5

5.0

1.0

4.0

3.0

8.0

6.0

10.5

5.0

7.0

3.0

7.0

1.5

6.0

5.0

10

mSec

d(off)

V

= 300 V, I

C

9.0 A

CC

T = 175°C

J

R

= 1.0 kW, R

= 33 W

G

L

Fall Time (Resistive)

Turn−Off Delay Time (Inductive)

Fall Time (Inductive)

Turn−On Delay Time

Rise Time

t

T = 25°C

J

8.0

14

f

V

= 5 V

GE

T = 175°C

J

T = 25°C

J

7.0

9.0

4.5

10

d(off)

V

= 300 V, I

9.0 A

=

C

CC

T = 175°C

J

R

= 1.0 kW, L =

300 mH

V

G

t

T = 25°C

J

f

= 5 V

GE

T = 175°C

J

T = 25°C

J

2.0

8.0

7.0

d(on)

V

= 14 V, I

=

C

CC

9.0 A

T = 175°C

J

R

= 1.0 kW, R

= 1.5 W

G

L

t

T = 25°C

J

r

V

= 5 V

GE

T = 175°C

J

*Maximum Value of Characteristic across Temperature Range.

3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.

http://onsemi.com

3

NGB8206N

TYPICAL ELECTRICAL CHARACTERISTICS

400

350

300

250

200

150

100

50

30

25

V

R

= 14 V

= 5.0 V

= 1000 W

CC

GE

T = 25°C

J

G

L = 1.8 mH

20

15

10

5

T = 175°C

J

L = 3.0 mH

L = 10 mH

V

R

= 14 V

= 5.0 V

= 1000 W

CC

GE

G

0

2

6

8

10

−50 −25

0

25

50

75 100

150 175

125

4

INDUCTOR (mH)

T , JUNCTION TEMPERATURE (°C)

J

Figure 1. Self Clamped Inductive Switching

Figure 2. Open Secondary Avalanche Current

vs. Temperature

2.0

60

50

40

30

20

10

0

V

= 10 V

4.5 V

4 V

GE

I

= 25 A

C

1.75

5 V

I

= 20 A

= 15 A

= 10 A

C

1.5

1.25

1.0

T = 175°C

J

3.5 V

I

= 7.5 A

C

3 V

0.75

0.5

2.5 V

0.25

V

= 4.5 V

GE

0.0

0

1

2

3

4

5

6

7

8

−50 −25

0

25

50

75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

J

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

Figure 3. Collector−to−Emitter Voltage vs.

Figure 4. Collector Current vs.

Junction Temperature

Collector−to−Emitter Voltage

60

50

40

30

20

10

0

60

50

40

30

20

10

0

V

= 10 V

V

= 10 V

GE

4.5 V

GE

4 V

5 V

T = 25°C

3.5 V

3 V

T = −40°C

J

3.5 V

3 V

2.5 V

7

2.5 V

0

1

2

3

4

5

6

8

0

1

2

3

4

5

6

7

8

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

Figure 5. Collector Current vs.

Figure 6. Collector Current vs.

Collector−to−Emitter Voltage

http://onsemi.com

4

NGB8206N

TYPICAL ELECTRICAL CHARACTERISTICS

100000

10000

45

40

35

30

25

20

15

10

5

V

= 5 V

CE

V

= −24 V

CE

1000

100

10

T = 25°C

J

V

= 175 V

CE

1.0

0.1

T = 175°C

J

T = −40°C

J

0

−50 −25

0

25

50

75 100 125 150 175

0

0.5

1

1.5

2

2.5

3

3.5

4

V

, GATE TO EMITTER VOLTAGE (V)

GE

T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Transfer Characteristics

Figure 8. Collector−to−Emitter Leakage

Current vs. Temperature

10000

1000

100

2.50

2.25

2.00

1.75

1.50

Mean

C

iss

Mean + 4 s

C

oss

C

rss

Mean − 4 s

1.25

1.00

0.75

0.50

10

1.0

0.1

0.25

0

−50 −25

0

25

50

75 100 125 150 175

0

5

10

15

20

25

T , JUNCTION TEMPERATURE (°C)

J

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

Figure 9. Gate Threshold Voltage vs.

Temperature

Figure 10. Capacitance vs.

Collector−to−Emitter Voltage

12

10

8

12

10

8

V

R

= 300 V

= 5.0 V

= 1000 W

CC

GE

t

fall

G

I

= 9.0 A

C

t

L = 300 mH

delay

t

delay

6

4

2

0

6

4

2

0

t

fall

V

R

= 300 V

= 5.0 V

= 1000 W

CC

GE

G

I

= 9.0 A

C

R = 33 W

L

25

50

75

100

125

150

175

25

50

75

100

125

150

175

T , JUNCTION TEMPERATURE (°C)

J

T , JUNCTION TEMPERATURE (°C)

J

Figure 11. Resistive Switching Fall Time vs.

Temperature

Figure 12. Inductive Switching Fall Time vs.

Temperature

http://onsemi.com

5

NGB8206N

1

Duty Cycle = 0.5

0.2

0.1

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

0.05

P

(pk)

READ TIME AT t

1

0.02

0.01

t

1

t

T

− T = P

R

(t)

2

J(pk)

A

(pk) qJC

DUTY CYCLE, D = t /t

1

2

Single Pulse

0.00001

0.01

0.000001

0.0001

0.001

0.01

0.1

1

t,TIME (S)

Figure 13. Best Case Transient Thermal Resistance

(Non−normalized Junction−to−Case Mounted on Cold Plate)

http://onsemi.com

6

NGB8206N

PACKAGE DIMENSIONS

D²PAK 3

CASE 418B−04

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

C

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE,

NEW STANDARD 418B−04.

E

V

W

−B−

INCHES

DIM MIN MAX

MILLIMETERS

4

MIN

MAX

A

B

C

D

E

F

G

H

J

0.340 0.380

0.380 0.405

0.160 0.190

0.020 0.035

0.045 0.055

0.310 0.350

0.100 BSC

8.64

9.65 10.29

4.06

0.51

1.14

7.87

9.65

4.83

0.89

1.40

8.89

A

S

1

2

3

2.54 BSC

0.080

0.018 0.025

0.090 0.110

0.110

2.03

0.46

2.29

1.32

7.11

5.00 REF

2.00 REF

0.99 REF

2.79

0.64

2.79

1.83

8.13

−T−

SEATING

PLANE

K

W

J

K

L

G

0.052 0.072

0.280 0.320

0.197 REF

0.079 REF

0.039 REF

0.575 0.625 14.60 15.88

0.045 0.055 1.14 1.40

M

N

P

R

S

V

H

D 3 PL

M

T B

0.13 (0.005)

STYLE 4:

PIN 1. GATE

P

L

2. COLLECTOR

3. EMITTER

4. COLLECTOR

U

SOLDERING FOOTPRINT*

M

8.38

0.33

1.016

0.04

F

10.66

0.42

5.08

0.20

VIEW W−W

3.05

0.12

17.02

0.67

mm

inches

ǒ

Ǔ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

NGB8206N/D

http://onsemi.com

7

型号:	NGB8206NG
Brand Name：	ON Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Obsolete
零件包装代码：	SFM
包装说明：	LEAD FREE, CASE 418B-04, D2PAK-3
针数：	3
制造商包装代码：	418B-04
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
Factory Lead Time：	1 week
风险等级：	5.67
Is Samacsys：	N
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	20 A
集电极-发射极最大电压：	390 V
配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大降落时间（tf）：	14000 ns
门极发射器阈值电压最大值：	2.1 V
门极-发射极最大电压：	15 V
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
元件数量：	1
端子数量：	2
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	150 W
认证状态：	Not Qualified
最大上升时间（tr）：	8000 ns
子类别：	Insulated Gate BIP Transistors
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	40
晶体管应用：	AUTOMOTIVE IGNITION
晶体管元件材料：	SILICON
标称断开时间 (toff)：	18500 ns
标称接通时间 (ton)：	6500 ns
Base Number Matches：	1

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