NTB25P06各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号NTB25P06的概述

芯片NTB25P06的概述 NTB25P06是一款高性能的N沟道MOSFET，广泛应用于现代电子设备中。作为一款功率MOSFET，NTB25P06凭借其高效的电子控制能力，成为了许多电子电路设计中的重要元件。其工作电压范围及租盏性能使其能够满足各类应用需求，从电源管理到功率放大等，均有广泛应用。芯片NTB25P06的详细参数 NTB25P06的主要电气参数包括其最大漏极－源极电压（V_DS）、最大栅极－源极电压（V_GS）以及最大漏极电流（I_D）。具体参数如下： - 最大漏极－源极电压 (V_DS): 60V - 最大栅极－源极电压 (V_GS): ±20V - 最大漏极电流 (I_D): 25A（在适当散热条件下） - 静态漏极-源极电流 (I_DSS): 1mA（V_GS = 0V时） - 栅极阈值电压 (V_GS(th)): 1V-3V（在I_D = 250μA时） - 导通...

产品型号NTB25P06的Datasheet PDF文件预览

NTB25P06

Power MOSFET

−60 V, −27.5 A, P−Channel D²PAK

Designed for low voltage, high speed switching applications and to

withstand high energy in the avalanche and commutation modes.

Features

http://onsemi.com

• Pb−Free Packages are Available

TYP

I MAX

(BR)DSS

DS(on)

Typical Applications

• PWM Motor Controls

• Power Supplies

• Converters

−60 V

65 mW @ −10 V

−27.5 A

P−Channel

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Drain−to−Source Voltage

DSS

−60

Gate−to−Source Voltage

− Continuous

"15

"20

Vpk

− Non−Repetitive (t v10 ms)

GSM

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

Drain Current

− Continuous @ T = 25°C

27.5

Apk

− Single Pulse (t v10 ms)

Total Power Dissipation @ T = 25°C

120

Operating and Storage

Temperature Range

T , T

−55 to

+175

°C

stg

NTB25P06

YWW

D PAK

CASE 418B

STYLE 2

Single Pulse Drain−to−Source Avalanche

600

°C/W

°C

Energy − Starting T = 25°C

Drain

(V = 25 V, V = 10 V,

= 20 A, L = 3 mH, R = 25 W)

L(pk)

Gate

NTB25P06 = Device Code

Source

Thermal Resistance

− Junction−to−Case

1.25

46.8

63.2

= Year

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

= Work Week

Maximum Lead Temperature for Soldering

260

Purposes, (1/8″ from case for 10 s)

ORDERING INFORMATION

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†

Device

Package

Shipping

NTB25P06

D PAK

50 Units/Rail

NTB25P06G

D PAK

1. When surface mounted to an FR4 board using 1″ pad size

(Pb−Free)

(Cu Area 1.127 in ).

2. When surface mounted to an FR4 board using the minimum recommended

NTB25P06T4

D PAK

800/Tape & Reel

pad size (Cu Area 0.412 in ).

NTB25P06T4G

D PAK

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 2

NTB25P06/D

NTB25P06

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(V = 0 V, I = −250 mA)

(BR)DSS

−60

−

mV/°C

(Positive Temperature Coefficient)

Zero Gate Voltage Drain Current

DSS

(V = 0 V, V = −60 V, T = 25°C)

−

−10

−100

(V = 0 V, V = −60 V, , T = 150°C)

Gate−Body Leakage Current (V = ±15 V, V = 0 V)

−

±100

GSS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(V = V = −250 mA)

mV/°C

GS(th)

GS, D

−2.0

−

−2.8

6.2

−4.0

−

(Negative Threshold Temperature Coefficient)

Static Drain−Source On−State Resistance

DS(on)

(V = −10 V, I = −12.5 A)

−

0.065

0.070

0.075

0.082

(V = −10 V, I = −25 A)

Forward Transconductance

(V = −10 V, I = −12.5 A)

gFS

Mhos

−

DYNAMIC CHARACTERISTICS

Input Capacitance

−

1200

345

1680

480

iss

(V = −25 V, V = 0 V,

Output Capacitance

oss

F = 1.0 MHz)

Reverse Transfer Capacitance

180

rss

SWITCHING CHARACTERISTICS (Notes 3 & 4)

Turn−On Delay Time

−

118

320

−

d(on)

Rise Time

(V = −30 V, I = −25 A,

= −10 V R = 9.1 W)

Turn−Off Delay Time

Fall Time

d(off)

190

Gate Charge

(V = −48 V, I = −25 A,

6.5

= −10 V)

−

BODY−DRAIN DIODE RATINGS (Note 3)

Diode Forward On−Voltage

−

−1.8

−1.4

−2.5

−

(I = −25 A, V = 0 V)

(I = −25 A, V = 0 V, T = 150°C)

Reverse Recovery Time

−

0.2

−

(I = −25 A, V = 0 V,

dI /dt = 100 A/ms)

Reverse Recovery Stored Charge

3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

http://onsemi.com

NTB25P06

= −10 V

T = 25°C

≥ 10 V

−7 V

−8 V

T = 25°C

−9 V

T = −55°C

−6 V

T = 125°C

−5.5 V

−5 V

−4.5 V

−4.2 V

−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V , GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0.2

0.15

0.1

0.095

0.085

= −10 V

T = 25°C

T = 125°C

= −10 V

T = 25°C

0.075

0.065

T = −55°C

= −15 V

0.05

−I , DRAIN CURRENT (AMPS)

Figure 3. On−Resistance vs. Drain Current and

Temperature

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

10000

1000

100

1.75

1.5

1.25

= 0 V

= −25 A

= −10 V

T = 150°C

T = 125°C

0.75

0.5

−50 −25

100 125

150

T , JUNCTION TEMPERATURE (°C)

−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

http://onsemi.com

NTB25P06

3000

2500

2000

1500

1000

= 0 V

T = 25°C

iss

rss

iss

oss

500

= −25 A

rss

T = 25°C

−V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

(VOLTS)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

1000

100

= 0 V

T = 25°C

d(off)

d(on)

= −30 V

= −25 A

= −10 V

R , GATE RESISTANCE (W)

100

0.25

0.5

0.75

1.25

1.5

1.75

−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

1000

600

= −20 V

= −25 A

SINGLE PULSE

= 25°C

500

400

100

300

200

100

10 ms

1 ms

100 ms

Limit

DS(on)

Thermal Limit

Package Limit

0.1

100

125

150

−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)

T , STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

http://onsemi.com

NTB25P06

PACKAGE DIMENSIONS

D²PAK

CASE 418B−04

ISSUE H

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 418B−01 THRU 418B−03 OBSOLETE,

NEW STANDARD 418B−04.

−B−

INCHES

DIM MIN MAX

MILLIMETERS

MIN

MAX

0.340 0.380

0.380 0.405

0.160 0.190

0.020 0.035

0.045 0.055

0.310 0.350

0.100 BSC

8.64

9.65 10.29

4.06

0.51

1.14

7.87

9.65

4.83

0.89

1.40

8.89

−T−

SEATING

PLANE

2.54 BSC

0.080

0.018 0.025

0.090 0.110

0.110

2.03

0.46

2.29

1.32

7.11

5.00 REF

2.00 REF

0.99 REF

2.79

0.64

2.79

1.83

8.13

0.052 0.072

0.280 0.320

0.197 REF

0.079 REF

0.039 REF

D 3 PL

0.13 (0.005)

0.575 0.625 14.60 15.88

0.045 0.055 1.14 1.40

VARIABLE

CONFIGURATION

ZONE

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

VIEW W−W

SOLDERING FOOTPRINT*

8.38

0.33

1.016

0.04

10.66

0.42

5.08

0.20

3.05

0.12

17.02

0.67

inches

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

NTB25P06

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

NTB25P06/D

http://onsemi.com

NTB25P06相关文章

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NTB25P06产品参数

型号:	NTB25P06
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	ON SEMICONDUCTOR
包装说明：	CASE 418B-04, D2PAK-3
针数：	3
制造商包装代码：	CASE 418B-04
Reach Compliance Code：	not_compliant
HTS代码：	8541.29.00.95
风险等级：	7.7
Is Samacsys：	N
雪崩能效等级（Eas）：	600 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	25 A
最大漏极电流 (ID)：	27.5 A
最大漏源导通电阻：	0.082 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e0
湿度敏感等级：	1
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	225
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	100 W
最大脉冲漏极电流 (IDM)：	80 A
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号NTB25P06的概述

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