NTSJ40120CTG全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

NTST40120CT,

NTSJ40120CTG,

NTSB40120CT-1G,

NTSB40120CTG,

NTSB40120CTT4G

http://onsemi.com

Very Low Forward Voltage

Trench-based Schottky

Rectifier

VERY LOW FORWARD

VOLTAGE, LOW LEAKAGE

SCHOTTKY BARRIER

RECTIFIERS 40 AMPERES,

120 VOLTS

Exceptionally Low V_F= 0.43 V at I_F= 5 A

Features

• Fine Lithography Trench−based Schottky Technology for Very Low

Forward Voltage and Low Leakage

PIN CONNECTIONS

1

• Fast Switching with Exceptional Temperature Stability

• Low Power Loss and Lower Operating Temperature

• Higher Efficiency for Achieving Regulatory Compliance

• Low Thermal Resistance

• High Surge Capability

• Pb−Free and Halide−Free Packages are Available

2, 4

3

4

Typical Applications

• Switching Power Supplies including Notebook / Netbook Adapters,

ATX and Flat Panel Display

• High Frequency and DC−DC Converters

• Freewheeling and OR−ing diodes

• Reverse Battery Protection

• Instrumentation

TO−220AB

CASE 221A

STYLE 6

I2PAK

CASE 418D

STYLE 3

1

2

3

4

Mechanical Characteristics

• Case: Epoxy, Molded

• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in

• Finish: All External Surfaces Corrosion Resistant and Terminal

TO−220FP

CASE 221AH

D2PAK

CASE 418B

Leads are Readily Solderable

1

2

• Lead Temperature for Soldering Purposes: 260°C Maximum for

10 sec

3

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

1

Publication Order Number:

January, 2013 − Rev. 4

NTST40120CT/D

NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,

NTSB40120CTT4G

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V

120

V

RRM

RWM

R

V

Average Rectified Forward Current

I

A

F(AV)

(Rated V , T = 120°C)

Per device

Per diode

40

20

R

C

Peak Repetitive Forward Current

I

FRM

(Rated V , Square Wave, 20 kHz, T = 125°C)

Per device

Per diode

80

40

R

C

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

I

250

FSM

Operating Junction Temperature

T

−40 to +150

10,000

°C

J

Storage Temperature

T

stg

Voltage Rate of Change (Rated V )

dv/dt

V/ms

R

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

NTST40120CTG,

NTSB40120CT−1G

Rating

Symbol

NTSB40120CTG NTSJ40120CTG

Unit

Maximum Thermal Resistance per Diode

Junction−to−Case

Junction−to−Ambient

R

1.3

70

0.79

46.3

4.0

105

°C/W

q

JC

JA

R

q

ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)

Rating

Symbol

Typ

Max

Unit

Maximum Instantaneous Forward Voltage (Note 1)

v

V

F

(I = 5 A, T = 25°C)

0.50

0.60

0.78

−

0.91

F

J

(I = 10 A, T = 25°C)

F

J

(I = 20 A, T = 25°C)

F

J

(I = 5 A, T = 125°C)

0.43

0.53

0.63

−

0.71

F

J

(I = 10 A, T = 125°C)

F

J

(I = 20 A, T = 125°C)

F

J

Maximum Instantaneous Reverse Current (Note 1)

(V = 90 V, T = 25°C)

I

R

16

−

mA

R

J

(V = 90 V, T = 125°C)

R

J

(Rated dc Voltage, T = 25°C)

−

30

500

100

mA

J

(Rated dc Voltage, T = 125°C)

J

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%

http://onsemi.com

2

NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,

NTSB40120CTT4G

TYPICAL CHARACTERISITICS

100

10

100

T = 150°C

A

T = 150°C

A

10

T = 125°C

A

T = 25°C

A

T = 125°C

A

1.0

0.1

1.0

0.1

0.01

T = 25°C

A

0.001

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

20

30

40

50

60

70

80

90 100 110 120

v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

F

V , REVERSE VOLTAGE (VOLTS)

R

Figure 1. Typical Forward Voltage

Figure 2. Typical Reverse Current

40

10000

1000

100

T = 25°C

J

R

= 1.3°C/W

qJC

35

30

25

20

15

10

5

dc

SQUARE WAVE

0

20

40

60

80

100

120

140

0.1

1

10

100

V , REVERSE VOLTAGE (VOLTS)

R

T , CASE TEMPERATURE (°C)

C

Figure 3. Typical Junction Capacitance

Figure 4. Current Derating per Leg

18

16

14

12

10

8

80

75

70

65

60

55

50

45

40

35

30

25

20

15

10

5

I

/I = 5

R

= 1.3°C/W

PK AV

q

JC

dc

SQUARE

WAVE

dc

I

/I = 10

PK AV

SQUARE WAVE

I

/I = 20

PK AV

6

4

2

T = 150°C

A

0

2

4

6

8

10 12 14 16 18 20 22 24

0

20

40

60

80

100

120

140

T , CASE TEMPERATURE (°C)

C

I , AVERAGE FORWARD CURRENT (A)

F(AV)

Figure 5. Current Derating, Case

Figure 6. Forward Power Dissipation

http://onsemi.com

3

NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,

NTSB40120CTT4G

TYPICAL CHARACTERISITICS

10

1

50% Duty Cycle

20%

10%

5%

0.1

2%

Single Pulse

0.00001 0.0001

1%

0.01

0.000001

0.001

0.01

0.1

1

10

100

1000

t, Pulse Time (sec)

Figure 7. Typical Transient Thermal Response for NTST40120CT and NTSB40120CT−1G

10

50% Duty Cycle

20%

1

0.1

10%

5%

2%

1%

0.01

0.001

Single Pulse

0.000001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

t, Pulse Time (sec)

Figure 8. Typical Transient Thermal Response for NTSJ40120CTG

1

50% Duty Cycle

0.1

20%

10%

5%

2%

1%

0.000001

Single Pulse

0.00001 0.0001

0.01

0.001

0.01

0.1

1

10

100

1000

t, Pulse Time (sec)

Figure 9. Typical Transient Thermal Response for NTSB40120CTG

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4

NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,

NTSB40120CTT4G

ORDERING INFORMATION

Device

Package

Shipping

NTST40120CTG

NTSJ40120CTG

NTSB40120CT−1G

NTSB40120CTG

NTSB40120CTT4G

TO−220AB

(Pb−Free)

50 Units / Rail

TO−220FP

(Halide−Free)

50 Units / Rail

2

I PAK

(Pb−Free)

2

D PAK

50 Units / Rail

(Pb−Free)

2

D PAK

800 / Tape & Reel

(Pb−Free)

MARKING DIAGRAMS

AYWW

TS40120CG

AKA

AYWW

TS40120CG

AKA

AYWW

TS40120Cx

AKA

AYWW

TS40120CG

AKA

2

TO−220AB

TO−220FP

I PAK

D PAK

A

= Assembly Location

Y

= Year

WW

AKA

x

= Work Week

= Polarity Designator

= G or H

G

H

= Pb−Free Package

= Halide−Free Package

http://onsemi.com

5

NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,

NTSB40120CTT4G

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

SEATING

PLANE

−T−

C

B

F

T

S

INCHES

DIM MIN

MILLIMETERS

4

1

MAX

0.620

0.405

0.190

0.035

0.161

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.36

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.88

4.09

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

A

B

C

D

F

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.014

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

A

K

Q

Z

2

3

U

H

G

H

J

K

L

N

Q

R

S

T

L

R

V

J

G

U

V

Z

D

0.080

2.04

N

STYLE 6:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

TO−220 FULLPACK, 3−LEAD

CASE 221AH

ISSUE B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

SEATING

PLANE

A

B

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR UNCONTROLLED IN THIS AREA.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH

AND GATE PROTRUSIONS. MOLD FLASH AND GATE

PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE

DIMENSIONS ARE TO BE MEASURED AT OUTERMOST

EXTREME OF THE PLASTIC BODY.

E

A

P

E/2

H1

A1

M

B A

0.14

4

Q

5. DIMENSION b2 DOES NOT INCLUDE DAMBAR

PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION

SHALL NOT EXCEED 2.00.

D

C

NOTE 3

1

2

3

MILLIMETERS

DIM MIN

MAX

4.70

2.90

2.70

0.84

1.40

0.79

15.30

10.30

A

A1

A2

b

4.30

2.50

0.54

1.10

0.49

14.70

9.70

L

L1

b2

c

3X

c

b

3X

b2

e

M

0.25

B

A

C

D

A2

E

e

2.54 BSC

H1

L

6.70

12.70

---

7.10

14.73

2.80

L1

P

3.00

2.80

3.40

3.20

Q

http://onsemi.com

6

NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,

NTSB40120CTT4G

PACKAGE DIMENSIONS

D²PAK 3

CASE 418B−04

ISSUE K

NOTES:

1. DIMENSIONING AND TOLERANCING

C

PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

E

3. 418B−01 THRU 418B−03 OBSOLETE,

V

W

NEW STANDARD 418B−04.

−B−

INCHES

DIM MIN MAX

MILLIMETERS

4

MIN

MAX

A

B

C

D

E

F

G

H

J

0.340 0.380

0.380 0.405

0.160 0.190

0.020 0.035

0.045 0.055

0.310 0.350

0.100 BSC

8.64

9.65 10.29

4.06

0.51

1.14

7.87

9.65

4.83

0.89

1.40

8.89

A

S

1

2

3

2.54 BSC

0.080

0.018 0.025

0.090 0.110

0.110

2.03

0.46

2.29

1.32

7.11

5.00 REF

2.00 REF

0.99 REF

2.79

0.64

2.79

1.83

8.13

−T−

SEATING

PLANE

K

W

K

L

J

G

0.052 0.072

0.280 0.320

0.197 REF

0.079 REF

0.039 REF

0.575 0.625 14.60 15.88

0.045 0.055

M

N

P

R

S

V

H

D 3 PL

M

0.13 (0.005)

T B

1.14

1.40

VARIABLE

CONFIGURATION

ZONE

N

P

L

R

U

L

M

F

VIEW W−W

1

2

3

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7

NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,

NTSB40120CTT4G

PACKAGE DIMENSIONS

I²PAK (TO−262)

CASE 418D

ISSUE D

C

E

V

−B−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

4

2. CONTROLLING DIMENSION: INCH.

INCHES

DIM MIN MAX

MILLIMETERS

A

MIN

8.51

9.65

4.06

0.66

1.14

MAX

9.65

10.31

4.70

0.89

1.40

W

A

B

C

D

E

F

0.335

0.380

0.160

0.026

0.045

0.380

0.406

0.185

0.035

0.055

1

2

3

F

0.122 REF

0.100 BSC

3.10 REF

2.54 BSC

−T−

G

H

J

SEATING

PLANE

0.094

0.013

0.500

0.110

0.025

0.562

2.39

0.33

2.79

0.64

K

S

V

W

12.70

14.27

S

0.390 REF

9.90 REF

0.045

0.522

0.070

0.551

1.14

13.25

1.78

14.00

STYLE 3:

PIN 1. ANODE

J

G

2. CATHODE

3. ANODE

4. CATHODE

H

D 3 PL

M

T B

0.13 (0.005)

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,

copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC

reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without

limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC

does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for

surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where

personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and

its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,

any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture

of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

NTST40120CT/D

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8

型号:	NTSP1RL
生命周期：	Obsolete
IHS 制造商：	STMICROELECTRONICS
零件包装代码：	SOIC
包装说明：	SOP,
针数：	8
Reach Compliance Code：	unknown
HTS代码：	8542.39.00.01
风险等级：	5.84
JESD-30 代码：	R-PDSO-G8
长度：	4.9 mm
功能数量：	1
端子数量：	8
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
认证状态：	Not Qualified
座面最大高度：	1.75 mm
表面贴装：	YES
电信集成电路类型：	SURGE PROTECTION CIRCUIT
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
宽度：	3.9 mm
Base Number Matches：	1

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