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产品型号NTZD5110NT1G的概述

芯片NTZD5110NT1G的概述 NTZD5110NT1G是一款高效、低功耗的双向电压保护器，专为保护电子设备免受过压及反向电压影响而设计。它主要用于移动电子设备、电源模块及LED照明等应用场合。这种保护器能够在瞬态电压情况下保护内部电路，保证设备的可靠性与安全性。借助其小巧的封装设计，NTZD5110NT1G能够方便地集成于各种电子产品中，满足现代电子设计对空间、效率和成本的要求。芯片NTZD5110NT1G的详细参数 NTZD5110NT1G的主要技术参数包括： - 工作电压范围：-5至+5V，适合低电压应用场景 - 最大反向电压：-6V - 最大正向电流：1A - 尖峰脉冲功率：可达600W - 工作温度：-55℃至+125℃ - 存储温度：-55℃至+150℃ - 封装类型：SOT-563封装，尺寸小，适合潮湿环境 - 可靠性：符合AEC-Q101标准，适用于汽车电子等高...

产品型号NTZD5110NT1G的Datasheet PDF文件预览

NTZD5110N

Small Signal MOSFET

60 V, 310 mA, Dual N−Channel

with ESD Protection, SOT−563

Features

• Low R

• Low Threshold Voltage

• ESD Protected Gate

Improving System Efficiency

DS(on)

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• Small Footprint 1.6 x 1.6 mm

• These are Pb−Free Devices

MAX

I Max

(BR)DSS

DS(on)

1.6 W @ 10 V

2.5 W @ 4.5 V

310 mA

Applications

• Load/Power Switches

• Driver Circuits: Relays, Lamps, Displays, Memories, etc.

• Battery Management/Battery Operated Systems

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

N−Channel

MOSFET

Gate−to−Source Voltage

±20

294

212

250

Continuous Drain

Current (Note 1)

T = 25°C

Steady

State

MARKING

DIAGRAM

T = 85°C

Power Dissipation

(Note 1)

Steady State

S7 D

Continuous Drain

Current (Note 1)

T = 25°C

310

225

280

SOT−563−6

CASE 463A

tv5 s

T = 85°C

Power Dissipation

(Note 1)

t v 5 s

t = 10 ms

S7 = Specific Device Code

= Date Code

Pulsed Drain Current

590

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

PINOUT: SOT−563

Source Current (Body Diode)

350

260

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

Gate−Source ESD Rating (HBM, Method 3015)

ESD

900

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

500

447

Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t v 5 s (Note 1)

°C/W

Top View

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu. area = 1.127 in sq [1 oz] including traces).

Semiconductor Components Industries, LLC, 2007

Publication Order Number:

April, 2007 − Rev. 3

NTZD5110N/D

NTZD5110N

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Parameter

OFF CHARACTERISTICS

Symbol

Test Condition

Min

Typ

Max

Unit

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

−

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

−

mV/°C

(BR)DSS

−

Zero Gate Voltage Drain Current

= 0 V

T = 25°C

−

1.0

500

100

DSS

GSS

= 60 V

T = 125°C

= 0 V

= 50 V

T = 25°C

Gate−to−Source Leakage Current

= 0 V, V = "20 V

−

"10

450

150

= 0 V, V = "10 V

= 0 V, V = "5.0 V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

= V , I = 250 mA

1.0

−

2.5

−

mV/°C

GS(TH)

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance

−

4.0

GS(TH)

= 10 V, I = 500 mA

−

1.19

1.33

1.6

2.5

−

DS(on)

= 4.5 V, I = 200 mA

−

Forward Transconductance

CHARGES AND CAPACITANCES

Input Capacitance

= 5.0 V, I = 200 mA

−

ISS

−

24.5

4.2

2.2

0.7

0.1

0.3

0.1

−

= 0 V, f = 1.0 MHz,

Output Capacitance

OSS

RSS

= 20 V

Reverse Transfer Capacitance

Total Gate Charge

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

G(TH)

= 4.5 V, V = 10 V;

= 200 mA

−

d(ON)

Rise Time

7.3

= 10 V, V = 30 V,

= 200 mA, R = 10 W

Turn−Off Delay Time

63.7

30.6

d(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

−

0.8

0.7

1.2

= 0 V,

= 200 mA

T = 85°C

−

2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: pulse width v 300 ms, duty cycle v2%.

4. Switching characteristics are independent of operating junction temperatures.

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NTZD5110N

TYPICAL CHARACTERISTICS

1.6

1.2

0.8

1.2

5.0 V

4.5 V

= 10 V

9.0 V

4.0 V

8.0 V

7.0 V

6.0 V

0.8

3.5 V

T = 25°C

3.0 V

2.5 V

0.4

T = 125°C

T = −55°C

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

3.2

2.8

2.4

2.0

1.6

1.2

0.8

3.2

2.8

2.4

2.0

1.6

1.2

0.8

= 4.5 V

= 10 V

T = 125°C

T = 85°C

T = 25°C

T = −55°C

0.4

0.2

0.4

0.6

0.8

1.0

1.2

0.2

0.4

0.6

0.8

1.0

1.2

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Drain Current and

Figure 4. On−Resistance vs. Drain Current and

Temperature

2.4

2.0

1.6

1.2

2.2

1.8

1.4

= 0.2 A

= 500 mA

= 4.5 V

= 10 V

= 200 mA

1.0

0.6

0.8

0.4

−50 −25

100

125 150

, GATE−TO−SOURCE VOLTAGE (V)

T , JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance vs. Gate−to−Source

Figure 6. On−Resistance Variation with

Voltage

Temperature

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NTZD5110N

TYPICAL CHARACTERISTICS

iss

T = 25°C

= 0.2 A

T = 25°C

= 0 V

oss

rss

0.2

0.4

0.6

0.8

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

= 0 V

T = 85°C

T = 25°C

0.1

0.01

0.4

0.6

0.8

1.0

1.2

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

ORDERING INFORMATION

Device

Package

Shipping

NTZD5110NT1

SOT−563

3000 / Tape & Reel

NTZD5110NT1G

SOT−563

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-

cations Brochure, BRD8011/D.

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NTZD5110N

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS

OF BASE MATERIAL.

−X−

MILLIMETERS

DIM MIN MAX

INCHES

MIN MAX

−Y−

1.50

1.10

0.50

0.17

1.70 0.059 0.067

1.30 0.043 0.051

0.60 0.020 0.024

0.27 0.007 0.011

0.020 BSC

0.18 0.003 0.007

0.30 0.004 0.012

1.70 0.059 0.067

0.50 BSC

D 56 PL

0.08

0.10

1.50

0.08 (0.003)

SOLDERING FOOTPRINT*

0.3

0.0118

0.45

0.0177

1.0

0.0394

1.35

0.0531

0.5

0.0197 0.0197

inches

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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PUBLICATION ORDERING INFORMATION

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