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  • 集好芯城

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产品型号NX3008NBKS的概述

芯片 NX3008NBKS 概述 在现代电子设备中,集成电路芯片的应用愈加广泛,而 NX3008NBKS 是一款在电源管理领域备受关注的芯片。NX3008NBKS 是由新力科技(Nexperia)公司开发的一款高性能线性稳压器,具有多种应用场景,特别是在消费类电子产品、工业设备及汽车电子系统中。该芯片通过提供稳定的输出电压和高效的电源管理方案,确保电子元件在不同负载条件下正常运行。 该芯片的工作原理基于对输入电压进行调节,以提供稳压输出。其内部设计包含过流保护、短路保护和过热保护等多重保护机制,大幅提高了设备的安全性和可靠性。此外,NX3008NBKS 还具备较低的静态电流特性,使之在功耗敏感的应用中表现更为出色。这些特性使得 NX3008NBKS 在可穿戴设备、电源适配器、通信设备等多种领域都有着广泛的使用价值。 芯片 NX3008NBKS 的详细参数 NX3008NBKS 的详细参...

产品型号NX3008NBKS的Datasheet PDF文件预览

NX3008NBKS  
30 V, 350 mA dual N-channel Trench MOSFET  
Rev. 1 — 1 August 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363  
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET  
technology.  
1.2 Features and benefits  
Very fast switching  
ESD protection up to 2 kV  
AEC-Q101 qualified  
Low threshold voltage  
Trench MOSFET technology  
1.3 Applications  
Relay driver  
Low-side loadswitch  
Switching circuits  
High-speed line driver  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
Per transistor  
VDS  
VGS  
ID  
drain-source voltage  
Tj = 25 °C  
-
-
-
-
30  
8
V
V
gate-source voltage  
drain current  
-8  
-
[1]  
VGS = 4.5 V; Tamb = 25 °C  
350 mA  
Static characteristics (per transistor)  
RDSon  
drain-source on-state  
resistance  
VGS = 4.5 V; ID = 350 mA;  
Tj = 25 °C  
-
1
1.4  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
drain 1 cm2.  
NX3008NBKS  
NXP Semiconductors  
30 V, 350 mA dual N-channel Trench MOSFET  
2. Pinning information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
S1  
G1  
D2  
S2  
G2  
D1  
source TR1  
gate TR1  
D2  
D1  
6
5
4
3
2
3
drain TR2  
source TR2  
gate TR2  
G1  
G2  
4
1
2
5
SOT363 (SC-88)  
6
drain TR1  
S1  
S2  
017aaa256  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
SOT363  
NX3008NBKS  
SC-88  
plastic surface-mounted package; 6 leads  
4. Marking  
Table 4.  
Marking codes  
Type number  
NX3008NBKS  
Marking code[1]  
LB%  
[1] % = placeholder for manufacturing site code.  
NX3008NBKS  
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5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Per transistor  
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
30  
V
-8  
-
8
V
[1]  
[1]  
VGS = 4.5 V; Tamb = 25 °C  
VGS = 4.5 V; Tamb = 100 °C  
Tamb = 25 °C; single pulse; tp 10 µs  
Tamb = 25 °C  
350  
230  
1.4  
280  
320  
990  
mA  
mA  
A
-
IDM  
Ptot  
peak drain current  
-
[2]  
[1]  
total power dissipation  
-
mW  
mW  
mW  
-
Tsp = 25 °C  
-
Per device  
[2]  
Ptot  
Tj  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
Tamb = 25 °C  
-
445  
150  
150  
150  
mW  
°C  
-55  
-55  
-65  
Tamb  
Tstg  
°C  
°C  
Source-drain diode  
IS  
source current  
Tamb = 25 °C  
-
-
300  
mA  
V
ESD maximum rating  
[3]  
VESD  
electrostatic discharge voltage HBM  
2000  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
[3] Measured between all pins.  
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Product data sheet  
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3 of 17  
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30 V, 350 mA dual N-channel Trench MOSFET  
001aao121  
001aao122  
120  
120  
P
I
der  
(%)  
der  
(%)  
80  
80  
40  
0
40  
0
-75  
-25  
25  
75  
125  
175  
-75  
-25  
25  
75  
125  
175  
T (°C)  
j
T (°C)  
j
Fig 1. Normalized total power dissipation as a  
function of junction temperature  
Fig 2. Normalized continuous drain current as a  
function of junction temperature  
001aao251  
10  
l
D
(A)  
1
(1)  
-1  
10  
(2)  
(3)  
(4)  
(5)  
2
-2  
10  
10  
-1  
1
10  
10  
V
(V)  
DS  
IDM is a single pulse  
(1) tp = 1 ms  
(2) tp = 10 ms  
(3) DC; Tsp = 25 °C  
(4) tp = 100 ms  
(5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad  
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source  
voltage  
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4 of 17  
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6. Thermal characteristics  
Table 6.  
Symbol  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
[1]  
[2]  
Rth(j-a)  
thermal resistance from junction to ambient  
thermal resistance from junction to solder point  
thermal resistance from junction to ambient  
in free air  
-
-
-
390  
340  
-
445  
390  
130  
K/W  
K/W  
K/W  
Rth(j-sp)  
Per device  
Rth(j-a)  
[1]  
in free air  
-
-
300  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.  
017aaa034  
3
10  
duty cycle = 1  
Z
th(j-a)  
0.75  
(K/W)  
0.5  
0.33  
0.2  
0.25  
2
10  
0.1  
0.05  
0.02  
0.01  
0
10  
1
10  
3  
2  
1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;  
typical values  
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Product data sheet  
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5 of 17  
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30 V, 350 mA dual N-channel Trench MOSFET  
017aaa035  
3
10  
duty cycle = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.5  
0.33  
0.2  
2
10  
0.25  
0.1  
0.05  
0.02  
0.01  
0
10  
1
10  
3  
2  
1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for drain 1 cm2  
Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;  
typical values  
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7. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics (per transistor)  
V(BR)DSS  
drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
30  
-
-
V
V
VGSth  
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C  
voltage  
0.6  
0.9  
1.1  
IDSS  
drain leakage current  
VDS = 30 V; VGS = 0 V; Tj = 25 °C  
VDS = 30 V; VGS = 0 V; Tj = 150 °C  
VGS = 8 V; VDS = 0 V; Tj = 25 °C  
VGS = -8 V; VDS = 0 V; Tj = 25 °C  
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C  
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C  
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C  
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C  
VGS = 4.5 V; ID = 350 mA; Tj = 25 °C  
VGS = 4.5 V; ID = 350 mA; Tj = 150 °C  
VGS = 2.5 V; ID = 200 mA; Tj = 25 °C  
VGS = 1.8 V; ID = 10 mA; Tj = 25 °C  
VDS = 10 V; ID = 350 mA; Tj = 25 °C  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA  
µA  
µA  
µA  
nA  
nA  
nA  
nA  
-
10  
1
IGSS  
gate leakage current  
0.2  
0.2  
10  
10  
1
1
-
-
-
1
-
RDSon  
drain-source on-state  
resistance  
1
1.4  
2.5  
2.1  
2.8  
-
1.8  
1.4  
2
gfs  
forward  
310  
mS  
transconductance  
Dynamic characteristics (per transistor)  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
VDS = 15 V; ID = 350 mA; VGS = 4.5 V;  
Tj = 25 °C  
-
-
-
-
-
-
0.52  
0.17  
0.08  
34  
0.68  
nC  
nC  
nC  
pF  
pF  
pF  
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;  
Tj = 25 °C  
50  
-
Coss  
Crss  
6.5  
reverse transfer  
capacitance  
2.2  
-
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 20 V; RL = 250 ; VGS = 4.5 V;  
RG(ext) = 6 ; Tj = 25 °C  
-
-
-
-
15  
11  
69  
19  
30  
ns  
ns  
ns  
ns  
-
turn-off delay time  
fall time  
138  
-
Source-drain diode (per transistor)  
VSD  
source-drain voltage  
IS = 350 mA; VGS = 0 V; Tj = 25 °C  
0.47  
0.85  
1.2  
V
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30 V, 350 mA dual N-channel Trench MOSFET  
001aao267  
001aao268  
-3  
0.4  
10  
4.5 V  
I
D
2.5 V  
I
D
2 V  
(A)  
(A)  
0.3  
(1)  
(2)  
(3)  
-4  
-5  
-6  
10  
1.75 V  
1.5 V  
0.2  
0.1  
0.0  
10  
10  
V
= 1.25 V  
GS  
0
1
2
3
4
0.0  
0.5  
1.0  
1.5  
V
(V)  
V
(V)  
GS  
DS  
Tj = 25 °C  
Tj = 25 °C; VDS = 5 V  
(1) minimum values  
(2) typical values  
(3) maximum values  
Fig 6. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 7. Sub-threshold drain current as a function of  
gate-source voltage  
001aao269  
001aao270  
6
6
R
(on)  
R
(on)  
DS  
(Ω)  
DS  
(Ω)  
(1)  
(2)  
(3)  
4
2
0
4
(4)  
2
0
(1)  
(2)  
(5)  
(6)  
0.0  
0.1  
0.2  
0.3  
0.4  
0
1
2
3
4
5
I
D
(A)  
V
GS  
(V)  
Tj = 25 °C  
ID = 350 mA  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
(1) VGS = 1.5 V  
(2) VGS = 1.75 V  
(3) VGS = 2.0 V  
(4) VGS = 2.25 V  
(5) VGS = 2.5 V  
(6) VGS = 4.5 V  
Fig 8. Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 9. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
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30 V, 350 mA dual N-channel Trench MOSFET  
001aao272  
2.0  
a
001aao271  
0.4  
1.5  
1.0  
0.5  
0.0  
I
D
(A)  
(1)  
(2)  
0.3  
0.2  
0.1  
0.0  
-60  
0
60  
120  
180  
T (˚C)  
j
0
1
2
3
V
(V)  
GS  
VDS > ID x RDSon  
(1) Tj = 25 °C  
(2) Tj = 150 °C  
Fig 10. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 11. Normalized drain-source on-state resistance as  
a function of junction temperature; typical  
values  
001aao273  
001aao274  
2
1.5  
10  
V
GS(th)  
(V)  
(1)  
C
(1)  
(2)  
(pF)  
1.0  
0.5  
0.0  
10  
(2)  
(3)  
(3)  
1
-1  
2
-60  
0
60  
120  
180  
10  
1
10  
10  
T (˚C)  
j
V
DS  
(V)  
ID = 0.25 mA; VDS = VGS  
(1) maximum values  
(2) typical values  
f = 1 MHz; VGS = 0 V  
(1)Ciss  
(2)Coss  
(3) minimum values  
(3)Crss  
Fig 12. Gate-source threshold voltage as a function of  
junction temperature  
Fig 13. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
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30 V, 350 mA dual N-channel Trench MOSFET  
001aao275  
5
V
GS  
(V)  
V
DS  
4
3
2
1
0
I
D
V
GS(pl)  
V
GS(th)  
GS  
V
Q
Q
GS1  
GS2  
Q
Q
GD  
GS  
Q
G(tot)  
003aaa508  
0.0  
0.2  
0.4  
0.6  
Q
G
(nC)  
ID = 350 mA; VDS = 15 V; Tamb = 25 °C  
Fig 14. Gate-source voltage as a function of gate  
charge; typical values  
Fig 15. Gate charge waveform definitions  
001aao276  
0.4  
I
S
(A)  
0.3  
(1)  
(2)  
0.2  
0.1  
0.0  
0.0  
0.4  
0.6  
1.2  
V
(V)  
SD  
VGS = 0 V  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
Fig 16. Source current as a function of source-drain voltage; typical values  
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8. Test information  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig 17. Duty cycle definition  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
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9. Package outline  
Plastic surface-mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
L
p
w
M B  
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-11-08  
06-03-16  
SOT363  
SC-88  
Fig 18. Package outline SOT363 (SC-88)  
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Product data sheet  
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10. Soldering  
2.65  
solder lands  
0.4 (2×)  
1.5  
2.35  
0.6  
(4×)  
0.5  
(4×)  
solder resist  
solder paste  
0.5  
(4×)  
0.6  
(2×)  
occupied area  
0.6  
(4×)  
Dimensions in mm  
1.8  
sot363_fr  
Fig 19. Reflow soldering footprint for SOT363 (SC-88)  
1.5  
solder lands  
solder resist  
occupied area  
2.5  
0.3  
4.5  
1.5  
Dimensions in mm  
preferred transport  
direction during soldering  
1.3  
1.3  
2.45  
5.3  
sot363_fw  
Fig 20. Wave soldering footprint for SOT363 (SC-88)  
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11. Revision history  
Table 8.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
NX3008NBKS v.1  
20110801  
Product data sheet  
-
-
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12. Legal information  
12.1 Data sheet status  
Document status [1] [2]  
Product status [3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URL http://www.nxp.com.  
Right to make changes — NXP Semiconductors reserves the right to make  
12.2 Definitions  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
NXP Semiconductors does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
NX3008NBKS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 1 August 2011  
15 of 17  
NX3008NBKS  
NXP Semiconductors  
30 V, 350 mA dual N-channel Trench MOSFET  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,  
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,  
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,  
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,  
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
HD Radio and HD Radio logo — are trademarks of iBiquity Digital  
Corporation.  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
NX3008NBKS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 1 — 1 August 2011  
16 of 17  
NX3008NBKS  
NXP Semiconductors  
30 V, 350 mA dual N-channel Trench MOSFET  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3  
Thermal characteristics . . . . . . . . . . . . . . . . . . .5  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .7  
Test information. . . . . . . . . . . . . . . . . . . . . . . . .11  
Quality information . . . . . . . . . . . . . . . . . . . . . .11  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .14  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . .15  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .15  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
12.1  
12.2  
12.3  
12.4  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . .16  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2011.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 1 August 2011  
Document identifier: NX3008NBKS  
配单直通车
NX3008NBKS产品参数
型号:NX3008NBKS
是否Rohs认证: 符合
生命周期:Transferred
IHS 制造商:NXP SEMICONDUCTORS
零件包装代码:SC-88
包装说明:PLASTIC, SC-88, 6 PIN
针数:6
Reach Compliance Code:unknown
风险等级:5.59
Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V
最大漏极电流 (ID):0.35 A
最大漏源导通电阻:1.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6
JESD-609代码:e3
湿度敏感等级:1
元件数量:2
端子数量:6
工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL
认证状态:Not Qualified
参考标准:AEC-Q101; IEC-60134
表面贴装:YES
端子面层:PURE TIN
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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