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  • 深圳市正纳电子有限公司

     该会员已使用本站2年以上
  • OPA637BP 现货库存
  • 数量10000 
  • 厂家TI/德州仪器 
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  • 深圳市华来深电子有限公司

     该会员已使用本站13年以上
  • OPA637BP 现货库存
  • 数量3500 
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  • 深圳市能元时代电子有限公司

     该会员已使用本站10年以上
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  • 数量92000 
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  • 深圳市欧立现代科技有限公司

     该会员已使用本站12年以上
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  • 数量5000 
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  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
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  • 深圳市富莱微科技有限公司

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  • 深圳市欧立现代科技有限公司

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  • 数量10000 
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  • 深圳市拓森弘电子有限公司

     该会员已使用本站1年以上
  • OPA637BP
  • 数量5300 
  • 厂家Burr-Brown(TI) 
  • 封装 
  • 批号21+ 
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  • 深圳市科雨电子有限公司

     该会员已使用本站8年以上
  • OPA637BPG4
  • 数量50 
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  • 深圳市科雨电子有限公司

     该会员已使用本站8年以上
  • OPA637BP
  • 数量284 
  • 厂家TI 
  • 封装DIP-8 
  • 批号21+ 
  • ★体验愉快问购元件!!就找我吧!单价:337元
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  • 深圳市正纳电子有限公司

     该会员已使用本站2年以上
  • OPA637BP
  • 数量10000 
  • 厂家TI/德州仪器 
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  • 深圳市科雨电子有限公司

     该会员已使用本站9年以上
  • OPA637BP
  • 数量9800 
  • 厂家BB 
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  • 上海磐岳电子有限公司

     该会员已使用本站11年以上
  • OPA637BP
  • 数量5800 
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  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
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  • 数量7098 
  • 厂家TI(德州仪器) 
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  • 深圳市得捷芯城科技有限公司

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  • 数量50 
  • 厂家TI/德州仪器 
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  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • OPA637BP
  • 数量5000 
  • 厂家Maxim Integrated Products 
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  • 深圳市集创讯科技有限公司

     该会员已使用本站5年以上
  • OPA637BP
  • 数量12500 
  • 厂家TI/德州仪器 
  • 封装PDIP-8 
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  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
  • OPA637BP
  • 数量8500 
  • 厂家原厂品牌 
  • 封装原厂封装 
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  • 深圳市欧立现代科技有限公司

     该会员已使用本站12年以上
  • OPA637BP
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  • 深圳市正纳电子有限公司

     该会员已使用本站15年以上
  • OPA637BP
  • 数量5000 
  • 厂家TI/德州仪器 
  • 封装8-PDIP 
  • 批号21+ 
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  • 深圳市宏诺德电子科技有限公司

     该会员已使用本站8年以上
  • OPA637BP
  • 数量68000 
  • 厂家TI 
  • 封装PDIP8 
  • 批号22+ 
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  • 深圳市誉兴微科技有限公司

     该会员已使用本站4年以上
  • OPA637BP
  • 数量12600 
  • 厂家TI/德州仪器 
  • 封装DIP8 
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  • 深圳市硅诺电子科技有限公司

     该会员已使用本站8年以上
  • OPA637BP
  • 数量27416 
  • 厂家BB 
  • 封装DIP 
  • 批号17+ 
  • 原厂指定分销商,有意请来电或QQ洽谈
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  • 深圳市西源信息科技有限公司

     该会员已使用本站9年以上
  • OPA637BP
  • 数量8800 
  • 厂家TI/德州仪器 
  • 封装DIP8 
  • 批号最新批号 
  • 原装现货零成本有接受价格就出
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  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • OPA637BP
  • 数量5000 
  • 厂家TI 
  • 封装DIP-8 
  • 批号16+ 
  • 百分百原装正品,现货库存
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  • 010-62104931 QQ:857273081QQ:1594462451
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  • 万三科技(深圳)有限公司

     该会员已使用本站2年以上
  • OPA637BP
  • 数量660000 
  • 厂家Texas Instruments(德州仪器) 
  • 封装8-DIP (0.300 
  • 批号7.62mm) 
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  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • OPA637BP
  • 数量36000 
  • 厂家TI 
  • 封装DIP-8 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
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  • 深圳市宏捷佳电子科技有限公司

     该会员已使用本站12年以上
  • OPA637BP
  • 数量82000 
  • 厂家TI/德洲仪器 
  • 封装DIP-8 
  • 批号2023+ 
  • 原装原包现货支持实单
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  • 深圳市婷轩实业有限公司

     该会员已使用本站6年以上
  • OPA637BP
  • 数量5000 
  • 厂家Texas Instruments 
  • 封装8-PDIP 
  • 批号23+ 
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  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • OPA637BP
  • 数量85000 
  • 厂家TI 
  • 封装PDIP8 
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  • 万三科技(深圳)有限公司

     该会员已使用本站2年以上
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  • 数量6500000 
  • 厂家N/A 
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  • 深圳市一线半导体有限公司

     该会员已使用本站11年以上
  • OPA637BP
  • 数量18000 
  • 厂家Texas Instruments 
  • 封装 
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  • 深圳市隆鑫创展电子有限公司

     该会员已使用本站15年以上
  • OPA637BP
  • 数量30000 
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  • 封装DSBGA-9 
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  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • OPA637BP
  • 数量21 
  • 厂家BURR-BROWN 
  • 封装DIP-8 
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  • 上海意淼电子科技有限公司

     该会员已使用本站14年以上
  • OPA637BP
  • 数量20000 
  • 厂家Texas+Inst 
  • 封装PDIP(P)-8 
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产品型号OPA637BP的概述

OPA637BP芯片概述 OPA637BP是一款高性能的运算放大器,广泛用于信号处理、音频放大、传感器接口和数据采集系统等多种应用场景。该器件由德州仪器(Texas Instruments)制造,特别设计用于满足高精度和低噪声系统的需求,其主要特点包括高速、低失真和高共模抑制比等。 OPA637BP的详细参数 OPA637BP的关键参数如下: 1. 增益带宽积(Gain Bandwidth Product): OPA637BP提供高达 20 MHz 的增益带宽积,使其能够在大多数应用中实现高频率操作。 2. 输入偏置电流: 输入偏置电流极小,通常为 10 nA,这有助于提高系统的总体精度。 3. 输入失调电压: OPA637BP的输入失调电压为 150 μV,这使得它在精确测量和低信号环境下表现出色。 4. 供电电压范围: OPA637BP支持宽供电电压范围,通常为 ±2.5V...

产品型号OPA637BP的Datasheet PDF文件预览

®
OPA627  
OPA637  
OPA627  
OPA627  
Precision High-Speed  
Difet ® OPERATIONAL AMPLIFIERS  
APPLICATIONS  
PRECISION INSTRUMENTATION  
FEATURES  
VERY LOW NOISE: 4.5nV/Hz at 10kHz  
FAST DATA ACQUISITION  
FAST SETTLING TIME:  
OPA627—550ns to 0.01%  
OPA637—450ns to 0.01%  
DAC OUTPUT AMPLIFIER  
OPTOELECTRONICS  
LOW VOS: 100µV max  
SONAR, ULTRASOUND  
LOW DRIFT: 0.8µV/°C max  
LOW IB: 5pA max  
HIGH-IMPEDANCE SENSOR AMPS  
HIGH-PERFORMANCE AUDIO CIRCUITRY  
OPA627: Unity-Gain Stable  
OPA637: Stable in Gain 5  
ACTIVE FILTERS  
High frequency complementary transistors allow in-  
creased circuit bandwidth, attaining dynamic perform-  
ance not possible with previous precision FET op  
amps. The OPA627 is unity-gain stable. The OPA637  
is stable in gains equal to or greater than five.  
DESCRIPTION  
The OPA627 and OPA637 Difet operational amplifi-  
ers provide a new level of performance in a precision  
FET op amp. When compared to the popular OPA111  
op amp, the OPA627/637 has lower noise, lower offset  
voltage, and much higher speed. It is useful in a broad  
range of precision and high speed analog circuitry.  
Difet fabrication achieves extremely low input bias  
currents without compromising input voltage noise  
performance. Low input bias current is maintained  
over a wide input common-mode voltage range with  
unique cascode circuitry.  
The OPA627/637 is fabricated on a high-speed, dielec-  
trically-isolated complementary NPN/PNP process. It  
operates over a wide range of power supply voltage—  
±4.5V to ±18V. Laser-trimmed Difet input circuitry  
provides high accuracy and low-noise performance  
comparable with the best bipolar-input op amps.  
The OPA627/637 is available in plastic DIP, SOIC  
and metal TO-99 packages. Industrial and military  
temperature range models are available.  
7
+VS  
Trim  
1
Trim  
5
Output  
6
+In  
3
–In  
2
Difet ®, Burr-Brown Corp.  
–VS  
4
International Airport Industrial Park  
Mailing Address: PO Box 11400, Tucson, AZ 85734  
FAXLine: (800) 548-6133 (US/Canada Only)  
• Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111  
Internet: http://www.burr-brown.com/  
Cable: BBRCORP  
Telex: 066-6491  
FAX: (520) 889-1510  
Immediate Product Info: (800) 548-6132  
©1989 Burr-Brown Corporation  
PDS-998H  
Printed in U.S.A. March, 1998  
SPECIFICATIONS  
ELECTRICAL  
At TA = +25°C, and VS = ±15V, unless otherwise noted.  
OPA627BM, BP, SM  
OPA637BM, BP, SM  
OPA627AM, AP, AU  
OPA637AM, AP, AU  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
MIN  
TYP  
MAX  
UNITS  
(1)  
OFFSET VOLTAGE  
Input Offset Voltage  
AP, BP, AU Grades  
Average Drift  
AP, BP, AU Grades  
Power Supply Rejection  
40  
100  
0.4  
0.8  
120  
100  
250  
0.8  
2
130  
280  
1.2  
2.5  
116  
250  
500  
2
µV  
µV  
µV/°C  
µV/°C  
dB  
VS = ±4.5 to ±18V  
106  
100  
INPUT BIAS CURRENT (2)  
Input Bias Current  
Over Specified Temperature  
SM Grade  
Over Common-Mode Voltage  
Input Offset Current  
Over Specified Temperature  
SM Grade  
VCM = 0V  
VCM = 0V  
VCM = 0V  
VCM = ±10V  
VCM = 0V  
VCM = 0V  
1
5
1
50  
2
10  
2
pA  
nA  
nA  
pA  
pA  
nA  
nA  
1
0.5  
2
1
5
1
50  
10  
2
NOISE  
Input Voltage Noise  
Noise Density: f = 10Hz  
f = 100Hz  
f = 1kHz  
f = 10kHz  
Voltage Noise, BW = 0.1Hz to 10Hz  
Input Bias Current Noise  
Noise Density, f = 100Hz  
Current Noise, BW = 0.1Hz to 10Hz  
15  
8
5.2  
4.5  
0.6  
40  
20  
8
6
1.6  
20  
10  
5.6  
4.8  
0.8  
nV/Hz  
nV/Hz  
nV/Hz  
nV/Hz  
µVp-p  
1.6  
30  
2.5  
60  
2.5  
48  
fA/Hz  
fAp-p  
INPUT IMPEDANCE  
Differential  
Common-Mode  
1013 || 8  
1013 || 7  
*
*
|| pF  
|| pF  
INPUT VOLTAGE RANGE  
Common-Mode Input Range  
Over Specified Temperature  
Common-Mode Rejection  
±11  
±10.5  
106  
±11.5  
±11  
116  
*
*
*
*
V
V
dB  
VCM = ±10.5V  
100  
110  
OPEN-LOOP GAIN  
Open-Loop Voltage Gain  
Over Specified Temperature  
SM Grade  
V
O = ±10V, RL = 1kΩ  
112  
106  
100  
120  
117  
114  
106  
100  
116  
110  
dB  
dB  
dB  
VO = ±10V, RL = 1kΩ  
VO = ±10V, RL = 1kΩ  
FREQUENCY RESPONSE  
Slew Rate: OPA627  
OPA637  
Settling Time: OPA627 0.01%  
0.1%  
G = –1, 10V Step  
G = –4, 10V Step  
G = –1, 10V Step  
G = –1, 10V Step  
G = –4, 10V Step  
G = –4, 10V Step  
G = 1  
40  
100  
55  
135  
550  
450  
450  
300  
16  
80  
0.00003  
*
*
*
*
*
*
*
*
*
*
*
V/µs  
V/µs  
ns  
ns  
ns  
OPA637 0.01%  
0.1%  
ns  
Gain-Bandwidth Product: OPA627  
OPA637  
Total Harmonic Distortion + Noise  
MHz  
MHz  
%
G = 10  
G = +1, f = 1kHz  
POWER SUPPLY  
Specified Operating Voltage  
Operating Voltage Range  
Current  
±15  
±7  
*
*
V
V
mA  
±4.5  
±18  
±7.5  
*
*
*
OUTPUT  
Voltage Output  
Over Specified Temperature  
Current Output  
Short-Circuit Current  
Output Impedance, Open-Loop  
R
L = 1kΩ  
±11.5  
±11  
±12.3  
±11.5  
±45  
+70/–55  
55  
*
*
*
*
*
*
*
V
VO = ±10V  
mA  
mA  
±35  
±100  
*
*
*
1MHz  
TEMPERATURE RANGE  
Specification: AP, BP, AM, BM, AU  
–25  
–55  
–60  
–40  
+85  
*
°C  
°C  
SM  
Storage: AM, BM, SM  
AP, BP, AU  
+125  
+150  
+125  
*
*
*
*
°C  
°C  
θJ-A: AM, BM, SM  
AP, BP  
200  
100  
160  
*
*
°C/W  
°C/W  
°C/W  
AU  
* Specifications same as “B” grade.  
NOTES: (1) Offset voltage measured fully warmed-up. (2) High-speed test at TJ = +25°C. See Typical Performance Curves for warmed-up performance.  
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes  
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant  
any BURR-BROWN product for use in life support devices and/or systems.  
®
OPA627, 637  
2
ABSOLUTE MAXIMUM RATINGS(1)  
PIN CONFIGURATIONS  
Supply Voltage .................................................................................. ±18V  
Input Voltage Range .............................................. +VS + 2V to –VS – 2V  
Differential Input Range....................................................... Total VS + 4V  
Power Dissipation ........................................................................ 1000mW  
Operating Temperature  
M Package .................................................................. –55°C to +125°C  
P, U Package ............................................................. –40°C to +125°C  
Storage Temperature  
Top View  
DIP/SOIC  
Offset Trim  
–In  
1
2
3
4
8
7
6
5
No Internal Connection  
+VS  
+In  
Output  
Offset Trim  
M Package .................................................................. –65°C to +150°C  
P, U Package ............................................................. –40°C to +125°C  
Junction Temperature  
–VS  
M Package .................................................................................. +175°C  
P, U Package ............................................................................. +150°C  
Lead Temperature (soldering, 10s) ............................................... +300°C  
SOlC (soldering, 3s) ................................................................... +260°C  
NOTE: (1) Stresses above these ratings may cause permanent damage.  
TO-99  
Top View  
No Internal Connection  
8
PACKAGE/ORDERING INFORMATION  
+VS  
Offset Trim  
PACKAGE DRAWING  
NUMBER(1)  
TEMPERATURE  
RANGE  
1
7
PRODUCT  
PACKAGE  
OPA627AP  
OPA627BP  
OPA627AU  
OPA627AM  
OPA627BM  
OPA627SM  
Plastic DIP  
Plastic DIP  
SOIC  
TO-99 Metal  
TO-99 Metal  
TO-99 Metal  
006  
006  
182  
001  
001  
001  
–25°C to +85°C  
–25°C to +85°C  
–25°C to +85°C  
–25°C to +85°C  
–25°C to +85°C  
–55°C to +125°C  
–In  
2
Output  
6
3
5
+In  
OPA637AP  
OPA637BP  
OPA637AU  
OPA637AM  
OPA637BM  
OPA637SM  
Plastic DIP  
Plastic DIP  
SOIC  
TO-99 Metal  
TO-99 Metal  
TO-99 Metal  
006  
006  
182  
001  
001  
001  
–25°C to +85°C  
–25°C to +85°C  
–25°C to +85°C  
–25°C to +85°C  
–25°C to +85°C  
–55°C to +125°C  
4
Offset Trim  
–VS  
Case connected to –VS.  
NOTE: (1) For detailed drawing and dimension table, please see end of data  
sheet, or Appendix C of Burr-Brown IC Data Book.  
ELECTROSTATIC  
DISCHARGE SENSITIVITY  
This integrated circuit can be damaged by ESD. Burr-Brown  
recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling  
and installation procedures can cause damage.  
ESD damage can range from subtle performance degrada-  
tion to complete device failure. Precision integrated circuits  
may be more susceptible to damage because very small  
parametric changes could cause the device not to meet its  
published specifications.  
®
3
OPA627, 637  
TYPICAL PERFORMANCE CURVES  
At TA = +25°C, and VS = ±15V, unless otherwise noted.  
TOTAL INPUT VOLTAGE NOISE vs BANDWIDTH  
INPUT VOLTAGE NOISE SPECTRAL DENSITY  
1k  
100  
10  
1
p-p  
Noise Bandwidth:  
0.1Hz to indicated  
frequency.  
100  
10  
1
0.1  
RMS  
0.01  
1
10  
100  
1k  
10k  
100k  
1M  
10M  
1
10  
100  
1k  
10k  
100k  
1M  
10M  
Bandwidth (Hz)  
Frequency (Hz)  
VOLTAGE NOISE vs SOURCE RESISTANCE  
OPEN-LOOP GAIN vs FREQUENCY  
1k  
100  
10  
140  
120  
100  
80  
+
OPA637  
RS  
60  
Comparison with  
OPA27 Bipolar Op  
Amp + Resistor  
OPA627 + Resistor  
40  
OPA627  
20  
Spot Noise  
at 10kHz  
0
Resistor Noise Only  
–20  
1
100  
1k  
10k  
100k  
1M  
10M  
100M  
1
10  
100  
1k  
10k 100k 1M  
10M 100M  
)
Source Resistance (  
Frequency (Hz)  
OPA627 GAIN/PHASE vs FREQUENCY  
OPA637 GAIN/PHASE vs FREQUENCY  
30  
20  
10  
0
30  
–90  
–90  
20  
10  
–120  
–150  
–180  
–210  
–120  
–150  
–180  
–210  
Phase  
Phase  
Gain  
75° Phase  
Margin  
Gain  
0
–10  
–10  
1
10  
100  
1
10  
100  
Frequency (MHz)  
Frequency (MHz)  
®
OPA627, 637  
4
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, and VS = ±15V, unless otherwise noted.  
OPEN-LOOP GAIN vs TEMPERATURE  
OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY  
125  
120  
115  
110  
105  
100  
80  
60  
40  
20  
0
2
20  
200  
2k  
20k  
200k  
2M  
20M  
–75 –50  
–25  
0
25  
50  
75  
100 125  
Frequency (Hz)  
Temperature (°C)  
COMMON-MODE REJECTION vs  
INPUT COMMON MODE VOLTAGE  
COMMON-MODE REJECTION vs FREQUENCY  
OPA637  
130  
120  
110  
100  
90  
140  
120  
100  
80  
OPA627  
60  
40  
20  
80  
0
1
10  
100  
1k  
10k  
100k  
1M  
10M  
–15  
–10  
–5  
0
5
10  
15  
Common-Mode Voltage (V)  
Frequency (Hz)  
POWER-SUPPLY REJECTION AND COMMON-MODE  
REJECTION vs TEMPERATURE  
POWER-SUPPLY REJECTION vs FREQUENCY  
125  
120  
115  
110  
105  
140  
120  
100  
80  
PSR  
–VS PSRR 627  
and 637  
CMR  
60  
+VS PSRR 627  
637  
40  
20  
0
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
1
10  
100  
1k  
10k  
100k  
1M  
10M  
Frequency (Hz)  
Temperature (°C)  
®
5
OPA627, 637  
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, and VS = ±15V, unless otherwise noted.  
SUPPLY CURRENT vs TEMPERATURE  
OUTPUT CURRENT LIMIT vs TEMPERATURE  
100  
80  
60  
40  
20  
0
8
7.5  
7
+IL at VO = 0V  
+IL at VO = +10V  
–IL at VO = 0V  
6.5  
6
–IL at VO = –10V  
–75 –50  
–25  
0
25  
50  
75  
100 125  
–75 –50  
–25  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Temperature (°C)  
OPA637 GAIN-BANDWIDTH AND SLEW RATE  
vs TEMPERATURE  
OPA627 GAIN-BANDWIDTH AND SLEW RATE  
vs TEMPERATURE  
120  
100  
80  
160  
24  
20  
16  
12  
8
60  
55  
50  
Slew Rate  
140  
120  
100  
80  
Slew Rate  
GBW  
GBW  
60  
40  
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
–75  
–50  
–25  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Temperature (°C)  
OPA627 TOTAL HARMONIC DISTORTION + NOISE  
vs FREQUENCY  
OPA637 TOTAL HARMONIC DISTORTION + NOISE  
vs FREQUENCY  
0.1  
0.01  
1
0.1  
G = +1  
G = +10  
G = +10  
G = +50  
VI  
VI  
+
VO = ±10V  
+
VO = ±10V  
VI  
VI  
+
VO = ±10V  
600  
+
VO = ±10V  
600  
600 Ω  
600Ω  
5kΩ  
100pF  
100pF  
5k  
5kΩ  
100pF  
100pF  
549Ω  
549  
102  
Measurement BW: 80kHz  
0.001  
0.01  
G = +50  
Measurement BW: 80kHz  
G = +10  
0.0001  
0.00001  
0.001  
0.0001  
G = +1  
G = +10  
10k 20k  
20  
100  
1k  
10k 20k  
20  
100  
1k  
Frequency (Hz)  
Frequency (Hz)  
®
OPA627, 637  
6
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, and VS = ±15V, unless otherwise noted.  
INPUT BIAS CURRENT  
vs POWER SUPPLY VOLTAGE  
INPUT BIAS AND OFFSET CURRENT  
vs JUNCTION TEMPERATURE  
10k  
1k  
20  
15  
10  
5
NOTE: Measured fully  
warmed-up.  
TO-99  
Plastic  
100  
10  
IB  
DIP, SOIC  
IOS  
1
TO-99 with 0807HS Heat Sink  
0.1  
0
±4  
±6  
±8  
±10  
±12  
±14  
±16  
±18  
–50 –25  
0
25  
50  
75  
100  
125 150  
Supply Voltage (±VS)  
Junction Temperature (°C)  
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE  
INPUT OFFSET VOLTAGE WARM-UP vs TIME  
1.2  
1.1  
1
50  
25  
Beyond Linear  
Common-Mode Range  
0
0.9  
0.8  
–25  
–50  
Beyond Linear  
Common-Mode Range  
–15  
–10  
–5  
0
5
10  
15  
0
1
2
3
4
5
6
Common-Mode Voltage (V)  
Time From Power Turn-On (Min)  
MAX OUTPUT VOLTAGE vs FREQUENCY  
SETTLING TIME vs CLOSED-LOOP GAIN  
100  
30  
20  
10  
0
Error Band: ±0.01%  
OPA627  
10  
1
OPA637  
OPA637  
OPA627  
0.1  
100k  
1M  
10M  
100M  
–1  
–10  
–100  
–1000  
Frequency (Hz)  
Closed-Loop Gain (V/V)  
®
7
OPA627, 637  
TYPICAL PERFORMANCE CURVES (CONT)  
At TA = +25°C, and VS = ±15V, unless otherwise noted.  
SETTLING TIME vs ERROR BAND  
SETTLING TIME vs LOAD CAPACITANCE  
1500  
1000  
500  
0
3
2
1
0
CF  
+5V  
–5V  
OPA627 OPA637  
RI  
RF  
OPA637  
G = –4  
+
RI 2kΩ  
RF 2kΩ  
CF 6pF  
500Ω  
2kΩ  
4pF  
Error Band:  
±0.01%  
2kΩ  
OPA627  
G = –1  
OPA627  
G = –1  
OPA637  
G = –4  
0.001  
0.01  
0.1  
Error Band (%)  
1
10  
0
150  
200  
300  
400  
500  
Load Capacitance (pF)  
APPLICATIONS INFORMATION  
RF < 4RI  
OPA627  
The OPA627 is unity-gain stable. The OPA637 may be used  
to achieve higher speed and bandwidth in circuits with noise  
gain greater than five. Noise gain refers to the closed-loop  
gain of a circuit as if the non-inverting op amp input were  
being driven. For example, the OPA637 may be used in a  
non-inverting amplifier with gain greater than five, or an  
inverting amplifier of gain greater than four.  
OPA627  
+
+
Buffer  
Non-Inverting Amp  
G < 5  
RI  
RF < 4R  
RI  
When choosing between the OPA627 or OPA637, it is  
important to consider the high frequency noise gain of your  
circuit configuration. Circuits with a feedback capacitor  
(Figure 1) place the op amp in unity noise-gain at high  
frequency. These applications must use the OPA627 for  
proper stability. An exception is the circuit in Figure 2,  
where a small feedback capacitance is used to compensate  
for the input capacitance at the op amp’s inverting input. In  
this case, the closed-loop noise gain remains constant with  
frequency, so if the closed-loop gain is equal to five or  
greater, the OPA637 may be used.  
OPA627  
OPA627  
+
+
Bandwidth  
Limiting  
Inverting Amp  
G < |–4|  
OPA627  
OPA627  
+
+
Filter  
Integrator  
FIGURE 1. Circuits with Noise Gain Less than Five Require  
the OPA627 for Proper Stability.  
®
OPA627, 637  
8
OFFSET VOLTAGE ADJUSTMENT  
amp contributes little additional noise. Below 1k, op amp  
noise dominates over the resistor noise, but compares  
favorably with precision bipolar op amps.  
The OPA627/637 is laser-trimmed for low offset voltage  
and drift, so many circuits will not require external adjust-  
ment. Figure 3 shows the optional connection of an external  
potentiometer to adjust offset voltage. This adjustment should  
not be used to compensate for offsets created elsewhere in a  
system (such as in later amplification stages or in an A/D  
converter) because this could introduce excessive tempera-  
ture drift. Generally, the offset drift will change by approxi-  
mately 4µV/°C for 1mV of change in the offset voltage due  
to an offset adjustment (as shown on Figure 3).  
CIRCUIT LAYOUT  
As with any high speed, wide bandwidth circuit, careful  
layout will ensure best performance. Make short, direct  
interconnections and avoid stray wiring capacitance—espe-  
cially at the input pins and feedback circuitry.  
The case (TO-99 metal package only) is internally connected  
to the negative power supply as it is with most common op  
amps. Pin 8 of the plastic DIP, SOIC, and TO-99 packages  
has no internal connection.  
C2  
Power supply connections should be bypassed with good  
high frequency capacitors positioned close to the op amp  
pins. In most cases 0.1µF ceramic capacitors are adequate.  
The OPA627/637 is capable of high output current (in  
excess of 45mA). Applications with low impedance loads or  
capacitive loads with fast transient signals demand large  
currents from the power supplies. Larger bypass capacitors  
such as 1µF solid tantalum capacitors may improve dynamic  
performance in these applications.  
R2  
C1  
+
OPA637  
R1  
C1 = CIN + CSTRAY  
R1 C1  
C2  
=
R2  
FIGURE 2. Circuits with Noise Gain Equal to or Greater than  
Five May Use the OPA637.  
+VS  
100kΩ  
NOISE PERFORMANCE  
7
10kto 1MΩ  
Potentiometer  
(100kpreferred)  
Some bipolar op amps may provide lower voltage noise  
performance, but both voltage noise and bias current noise  
contribute to the total noise of a system. The OPA627/637  
is unique in providing very low voltage noise and very low  
current noise. This provides optimum noise performance  
over a wide range of sources, including reactive source  
impedances. This can be seen in the performance curve  
showing the noise of a source resistor combined with the  
noise of an OPA627. Above a 2ksource resistance, the op  
1
2
5
+
6
3
OPA627/637  
4
±10mV Typical  
Trim Range  
–VS  
FIGURE 3. Optional Offset Voltage Trim Circuit.  
Non-inverting  
Buffer  
2
2
6
6
OPA627  
Out  
Out  
3
3
In  
In  
+
+
OPA627  
TO-99 Bottom View  
Inverting  
In  
OPA627  
4
3
2
3
+
5
6
Out  
2
6
Board Layout for Input Guarding:  
Guard top and bottom of board.  
Alternate—use Teflon® standoff for sen-  
sitive input pins.  
7
No Internal Connection  
1
8
Teflon® E.I. du Pont de Nemours & Co.  
To Guard Drive  
FIGURE 4. Connection of Input Guard for Lowest IB.  
®
9
OPA627, 637  
INPUT BIAS CURRENT  
takes approximately 500ns. When the output is driven into  
the positive limit, recovery takes approximately 6µs. Output  
recovery of the OPA627 can be improved using the output  
clamp circuit shown in Figure 5. Diodes at the inverting  
input prevent degradation of input bias current.  
Difet fabrication of the OPA627/637 provides very low  
input bias current. Since the gate current of a FET doubles  
approximately every 10°C, to achieve lowest input bias  
current, the die temperature should be kept as low as pos-  
sible. The high speed and therefore higher quiescent current  
of the OPA627/637 can lead to higher chip temperature. A  
simple press-on heat sink such as the Burr-Brown model  
807HS (TO-99 metal package) can reduce chip temperature  
by approximately 15°C, lowering the IB to one-third its  
warmed-up value. The 807HS heat sink can also reduce low-  
frequency voltage noise caused by air currents and thermo-  
electric effects. See the data sheet on the 807HS for details.  
+VS  
5kΩ  
(2)  
HP 5082-2811  
Diode Bridge  
ZD1  
Temperature rise in the plastic DIP and SOIC packages can  
be minimized by soldering the device to the circuit board.  
Wide copper traces will also help dissipate heat.  
BB: PWS740-3  
1kΩ  
ZD1 : 10V IN961  
5kΩ  
The OPA627/637 may also be operated at reduced power  
supply voltage to minimize power dissipation and tempera-  
ture rise. Using ±5V power supplies reduces power dissipa-  
tion to one-third of that at ±15V. This reduces the IB of TO-  
99 metal package devices to approximately one-fourth the  
value at ±15V.  
RF  
VI  
–VS  
VO  
Clamps output  
at VO = ±11.5V  
RI  
+
OPA627  
Leakage currents between printed circuit board traces can  
easily exceed the input bias current of the OPA627/637. A  
circuit board “guard” pattern (Figure 4) reduces leakage  
effects. By surrounding critical high impedance input cir-  
cuitry with a low impedance circuit connection at the same  
potential, leakage current will flow harmlessly to the low-  
impedance node. The case (TO-99 metal package only) is  
internally connected to –VS.  
FIGURE 5. Clamp Circuit for Improved Overload Recovery.  
CAPACITIVE LOADS  
As with any high-speed op amp, best dynamic performance  
can be achieved by minimizing the capacitive load. Since a  
load capacitance presents a decreasing impedance at higher  
frequency, a load capacitance which is easily driven by a  
slow op amp can cause a high-speed op amp to perform  
poorly. See the typical curves showing settling times as a  
function of capacitive load. The lower bandwidth of the  
OPA627 makes it the better choice for driving large capaci-  
tive loads. Figure 6 shows a circuit for driving very large  
load capacitance. This circuit’s two-pole response can also  
be used to sharply limit system bandwidth. This is often  
useful in reducing the noise of systems which do not require  
the full bandwidth of the OPA627.  
Input bias current may also be degraded by improper han-  
dling or cleaning. Contamination from handling parts and  
circuit boards may be removed with cleaning solvents and  
deionized water. Each rinsing operation should be followed  
by a 30-minute bake at 85°C.  
Many FET-input op amps exhibit large changes in input  
bias current with changes in input voltage. Input stage  
cascode circuitry makes the input bias current of the  
OPA627/637 virtually constant with wide common-mode  
voltage changes. This is ideal for accurate high input-  
impedance buffer applications.  
RF  
1kΩ  
PHASE-REVERSAL PROTECTION  
The OPA627/637 has internal phase-reversal protection.  
Many FET-input op amps exhibit a phase reversal when the  
input is driven beyond its linear common-mode range. This  
is most often encountered in non-inverting circuits when the  
input is driven below –12V, causing the output to reverse  
into the positive rail. The input circuitry of the OPA627/637  
does not induce phase reversal with excessive common-  
mode voltage, so the output limits into the appropriate rail.  
200pF  
G = +1  
BW 1MHz  
CF  
RO  
20Ω  
+
CL  
5nF  
OPA627  
RF  
R1  
R1  
G = 1+  
For Approximate Butterworth Response:  
Optional Gain  
Gain > 1  
2 RO CL  
RF >> RO  
CF  
=
RF  
OUTPUT OVERLOAD  
1
When the inputs to the OPA627/637 are overdriven, the  
output voltage of the OPA627/637 smoothly limits at ap-  
proximately 2.5V from the positive and negative power  
supplies. If driven to the negative swing limit, recovery  
f–3dB  
=
2π √ RF RO CF CL  
FIGURE 6. Driving Large Capacitive Loads.  
®
OPA627, 637  
10  
INPUT PROTECTION  
Sometimes input protection is required on I/V converters of  
inverting amplifiers (Figure 7b). Although in normal opera-  
tion, the voltage at the summing junction will be near zero  
(equal to the offset voltage of the amplifier), large input  
transients may cause this node to exceed 2V beyond the  
power supplies. In this case, the summing junction should  
be protected with diode clamps connected to ground. Even  
with the low voltage present at the summing junction,  
common signal diodes may have excessive leakage current.  
Since the reverse voltage on these diodes is clamped, a  
diode-connected signal transistor can be used as an inexpen-  
sive low leakage diode (Figure 7b).  
The inputs of the OPA627/637 are protected for voltages  
between +VS + 2V and –VS – 2V. If the input voltage can  
exceed these limits, the amplifier should be protected. The  
diode clamps shown in Figure 7a will prevent the input  
voltage from exceeding one forward diode voltage drop  
beyond the power supplies—well within the safe limits. If  
the input source can deliver current in excess of the maxi-  
mum forward current of the protection diodes, use a series  
resistor, RS, to limit the current. Be aware that adding  
resistance to the input will increase noise. The 4nV/Hz  
theoretical thermal noise of a 1kresistor will add to the  
4.5nV/Hz noise of the OPA627/637 (by the square-root of  
the sum of the squares), producing a total noise of 6nV/Hz.  
Resistors below 100add negligible noise.  
+VS  
Leakage current in the protection diodes can increase the  
total input bias current of the circuit. The specified maxi-  
mum leakage current for commonly used diodes such as the  
1N4148 is approximately 25nA—more than a thousand  
times larger than the input bias current of the OPA627/637.  
Leakage current of these diodes is typically much lower and  
may be adequate in many applications. Light falling on the  
junction of the protection diodes can dramatically increase  
leakage current, so common glass-packaged diodes should  
be shielded from ambient light. Very low leakage can be  
achieved by using a diode-connected FET as shown. The  
2N4117A is specified at 1pA and its metal case shields the  
junction from light.  
VO  
D
+
OPA627  
D
D: IN4148 — 25nA Leakage  
2N4117A — 1pA Leakage  
Siliconix  
Optional RS  
–VS  
=
(a)  
IIN  
+
VO  
D
D
OPA627  
D: 2N3904  
=
(b)  
NC  
FIGURE 7. Input Protection Circuits.  
SMALL SIGNAL RESPONSE  
LARGE SIGNAL RESPONSE  
(A)  
(B)  
When used as a unity-gain buffer, large common-mode input voltage steps  
produce transient variations in input-stage currents. This causes the rising  
edge to be slower and falling edges to be faster than nominal slew rates  
observed in higher-gain circuits.  
G = 1  
+
OPA627  
FIGURE 8. OPA627 Dynamic Performance, G = +1.  
®
11  
OPA627, 637  
LARGE SIGNAL RESPONSE  
+10  
0
+10  
(C)  
0
(D)  
–10  
–10  
6pF(1)  
NOTE: (1) Optimum value will  
depend on circuit board lay-  
out and stray capacitance at  
the inverting input.  
When driven with a very fast input step (left), common-mode  
transients cause a slight variation in input stage currents which  
will reduce output slew rate. If the input step slew rate is reduced  
(right), output slew rate will increase slightly.  
2kΩ  
G = –1  
VOUT  
2kΩ  
+
OPA627  
FIGURE 9. OPA627 Dynamic Performance, G = –1.  
OPA637  
OPA637  
LARGE SIGNAL RESPONSE  
SMALL SIGNAL RESPONSE  
+10  
+100  
0
0
(E)  
(F)  
–10  
–100  
4pF(1)  
2kΩ  
G = 5  
VOUT  
+
OPA637  
500Ω  
NOTE: (1) Optimum value will depend on circuit  
board layout and capacitance at inverting input.  
FIGURE 10. OPA637 Dynamic Response, G = 5.  
®
OPA627, 637  
12  
Error Out  
RI/  
2kΩ  
OPA627  
OPA637  
CF  
RI, R1  
CF  
Error Band  
(0.01%)  
2kΩ  
6pF  
±0.5mV  
500Ω  
4pF  
±0.2mV  
HP-  
5082-  
2835  
2kΩ  
+15V  
RI  
High Quality  
+
NOTE: CF is selected for best settling time performance  
depending on test fixture layout. Once optimum value is  
determined, a fixed capacitor may be used.  
±5V  
Out  
Pulse Generator  
51Ω  
–15V  
FIGURE 11. Settling Time and Slew Rate Test Circuit.  
Gain = 100  
CMRR 116dB  
OPA637  
–In  
+
Bandwidth 1MHz  
RF  
5kΩ  
25kΩ  
25kΩ  
5
6
2
3
Input Common-Mode  
Range = ±5V  
INA105  
Differential  
Amplifier  
RG  
101Ω  
3pF  
Output  
+
RF  
5kΩ  
25kΩ  
25kΩ  
+
1
+In  
OPA637  
Differential Voltage Gain = 1 + 2RF/RG  
FIGURE 12. High Speed Instrumentation Amplifier, Gain = 100.  
Gain = 1000  
CMRR 116dB  
OPA637  
–In  
+
Bandwidth 400kHz  
RF  
5kΩ  
10kΩ  
100kΩ  
5
6
2
3
Input Common-Mode  
Range = ±10V  
INA106  
Differential  
Amplifier  
RG  
101Ω  
3pF  
Output  
+
RF  
5kΩ  
10kΩ  
100kΩ  
+
1
+In  
OPA637  
Differential Voltage Gain = (1 + 2RF/RG) • 10  
FIGURE 13. High Speed Instrumentation Amplifier, Gain = 1000.  
This composite amplifier uses the OPA603 current-feedback op amp to  
provide extended bandwidth and slew rate at high closed-loop gain. The  
feedback loop is closed around the composite amp, preserving the  
precision input characteristics of the OPA627/637. Use separate power  
supply bypass capacitors for each op amp.  
R2  
A1  
+
*Minimize capacitance at this node.  
VI  
+
VO  
GAIN  
(V/V)  
A1  
OP AMP  
R1  
()  
R2  
(k)  
R3  
R4  
–3dB  
SLEW RATE  
OPA603  
R
L 150Ω  
for ±10V Out  
()  
(k) (MHz)  
(V/µs)  
R1  
100  
1000  
OPA627  
OPA637  
50.5(1) 4.99  
49.9 4.99  
20  
12  
1
1
15  
11  
700  
500  
*
R3  
R4  
NOTE: (1) Closest 1/2% value.  
FIGURE 14. Composite Amplifier for Wide Bandwidth.  
®
13  
OPA627, 637  
配单直通车
OPA637BP产品参数
型号:OPA637BP
是否Rohs认证: 不符合
生命周期:Transferred
IHS 制造商:BURR-BROWN CORP
Reach Compliance Code:unknown
风险等级:5.75
Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.001 µA
25C 时的最大偏置电流 (IIB):0.000005 µA
最小共模抑制比:106 dB
标称共模抑制比:116 dB
频率补偿:YES (AVCL>=5)
最大输入失调电压:250 µV
JESD-30 代码:R-PDIP-T8
JESD-609代码:e0
低-偏置:YES
低-失调:YES
负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V
功能数量:1
端子数量:8
最高工作温度:85 °C
最低工作温度:-25 °C
封装主体材料:PLASTIC/EPOXY
封装代码:DIP
封装等效代码:DIP8,.3
封装形状:RECTANGULAR
封装形式:IN-LINE
电源:+-15 V
认证状态:Not Qualified
最小摆率:100 V/us
标称压摆率:135 V/us
子类别:Operational Amplifier
最大压摆率:7.5 mA
供电电压上限:18 V
标称供电电压 (Vsup):15 V
表面贴装:NO
技术:BIPOLAR
温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE
端子节距:2.54 mm
端子位置:DUAL
标称均一增益带宽:80000 kHz
最小电压增益:400000
Base Number Matches:1
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