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产品型号PBSS4350T的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
PBSS4350T  
50 V; 3 A NPN low VCEsat  
(BISS) transistor  
Product specification  
2004 Jan 09  
Supersedes data of 2002 Aug 08  
Philips Semiconductors  
Product specification  
50 V; 3 A NPN low VCEsat (BISS) transistor  
PBSS4350T  
FEATURES  
QUICK REFERENCE DATA  
Low collector-emitter saturation voltage VCEsat and  
corresponding low RCEsat  
SYMBOL  
PARAMETER  
MAX. UNIT  
VCEO  
IC  
collector-emitter voltage  
collector current (DC)  
50  
2
V
A
A
High collector current capability  
High collector current gain  
ICRP  
repetitive peak collector  
current  
3
Improved efficiency due to reduced heat generation.  
RCEsat  
equivalent on-resistance  
130  
mΩ  
APPLICATIONS  
PINNING  
PIN  
Power management applications  
Low and medium power DC/DC convertors  
Supply line switching  
DESCRIPTION  
1
2
3
base  
Battery chargers  
emitter  
collector  
Linear voltage regulation with low voltage drop-out  
(LDO).  
DESCRIPTION  
handbook, halfpage  
NPN low VCEsat transistor in a SOT23 plastic package.  
PNP complement: PBSS5350T.  
3
3
2
1
MARKING  
TYPE NUMBER  
PBSS4350T  
MARKING CODE(1)  
1
2
ZC*  
Top view  
MAM255  
Note  
1. * = p: Made in Hong Kong.  
* = t: Made in Malaysia.  
* = W: Made in China.  
Fig.1 Simplified outline (SOT23) and symbol.  
ORDERING INFORMATION  
TYPE  
PACKAGE  
DESCRIPTION  
plastic surface mounted package; 3 leads  
NUMBER  
NAME  
VERSION  
PBSS4350T  
SOT23  
2004 Jan 09  
2
Philips Semiconductors  
Product specification  
50 V; 3 A NPN low VCEsat (BISS) transistor  
PBSS4350T  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
50  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
A
A
A
A
collector-emitter voltage  
emitter-base voltage  
open base  
50  
open collector  
5
collector current (DC)  
repetitive peak collector current  
peak collector current  
base current (DC)  
2
ICRP  
ICM  
note 1  
3
single peak  
5
IB  
0.5  
300  
480  
540  
1.2  
+150  
150  
+150  
Ptot  
total power dissipation  
Tamb 25 °C; note 2  
Tamb 25 °C; note 3  
Tamb 25 °C; note 4  
Tamb 25 °C; notes 1 and 2  
mW  
mW  
mW  
W
Tstg  
Tj  
storage temperature  
65  
°C  
junction temperature  
°C  
Tamb  
operating ambient temperature  
65  
°C  
Notes  
1. Operated under pulsed conditions: pulse width tp 100 ms; duty cycle δ ≤ 0.25.  
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.  
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.  
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
in free air; note 1  
VALUE  
417  
UNIT  
K/W  
K/W  
K/W  
K/W  
Rth(j-a)  
thermal resistance from junction to  
ambient  
in free air; note 2  
260  
in free air; note 3  
230  
in free air; notes 1 and 4  
104  
Notes  
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.  
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.  
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.  
4. Operated under pulsed conditions: pulse width tp 100 ms; duty cycle δ ≤ 0.25.  
2004 Jan 09  
3
Philips Semiconductors  
Product specification  
50 V; 3 A NPN low VCEsat (BISS) transistor  
PBSS4350T  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
collector-base cut-off current IE = 0; VCB = 50 V  
IE = 0; VCB = 50 V; Tj = 150 °C  
IC = 0; VEB = 5 V  
CONDITIONS  
MIN.  
TYP.  
MAX.  
100  
UNIT  
nA  
ICBO  
50  
100  
µA  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
nA  
IC = 100 mA; VCE = 2 V  
300  
300  
300  
200  
100  
IC = 500 mA; VCE = 2 V  
IC = 1 A; VCE = 2 V; note 1  
IC = 2 A; VCE = 2 V; note 1  
IC = 3 A; VCE = 2 V; note 1  
IC = 500 mA; IB = 50 mA  
IC = 1 A; IB = 50 mA  
VCEsat  
collector-emitter saturation  
voltage  
80  
160  
280  
260  
370  
130  
1.1  
1.2  
mV  
mV  
mV  
mV  
mV  
mΩ  
V
IC = 2 A; IB = 100 mA; note 1  
IC = 2 A; IB = 200 mA; note 1  
IC = 3 A; IB = 300 mA; note 1  
IC = 2 A; IB = 200 mA; note 1  
IC = 2 A; IB = 100 mA; note 1  
IC = 3 A; IB = 300 mA; note 1  
RCEsat  
VBEsat  
equivalent on-resistance  
100  
base-emitter saturation  
voltage  
V
VBEon  
fT  
base-emitter turn-on voltage IC = 1 A; VCE = 2 V; note 1  
1.2  
100  
V
transition frequency  
IC = 100 mA; VCE = 5 V;  
f = 100 MHz  
MHz  
Cc  
collector capacitance  
IE = Ie = 0; VCB = 10 V; f = 1 MHz  
25  
pF  
Note  
1. Pulse test: tp 300 µs; δ ≤ 0.02.  
2004 Jan 09  
4
Philips Semiconductors  
Product specification  
50 V; 3 A NPN low VCEsat (BISS) transistor  
PBSS4350T  
MLD867  
MLD868  
1200  
1000  
handbook, halfpage  
handbook, halfpage  
h
FE  
V
BE  
(mV)  
800  
600  
400  
200  
0
(1)  
(2)  
800  
(1)  
(2)  
(3)  
400  
(3)  
2
0
10  
1  
2
3
I
4
1  
3
I
4
1
10  
10  
10  
10  
(mA)  
10  
1
10  
10  
10  
10  
(mA)  
C
C
VCE = 2 V.  
VCE = 2 V.  
(1) Tamb = 150 °C.  
(2) amb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 55 °C.  
(2) amb = 25 °C.  
(3) Tamb = 150 °C.  
T
T
Fig.2 DC current gain as a function of collector  
current; typical values.  
Fig.3 Base-emitter voltage as a function of  
collector current; typical values.  
MLD869  
MLD870  
1300  
1300  
handbook, halfpage  
handbook, halfpage  
V
V
BEsat  
BEsat  
(mV)  
(mV)  
(1)  
(1)  
900  
900  
(2)  
(2)  
(3)  
(3)  
500  
500  
100  
10  
100  
10  
1  
2
3
I
4
1  
2
3
I
4
1
10  
10  
10  
10  
(mA)  
1
10  
10  
10  
10  
(mA)  
C
C
IC/IB = 10.  
IC/IB = 20.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
Fig.4 Base-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.5 Base-emitter saturation voltage as a  
function of collector current; typical values.  
2004 Jan 09  
5
Philips Semiconductors  
Product specification  
50 V; 3 A NPN low VCEsat (BISS) transistor  
PBSS4350T  
MLD871  
MLD872  
3
3
10  
10  
handbook, halfpage  
handbook, halfpage  
V
V
CEsat  
CEsat  
(1)  
(mV)  
(mV)  
(2)  
(3)  
2
2
10  
10  
(1)  
(3)  
(2)  
10  
10  
1
10  
1
10  
1  
2
3
4
1  
2
3
I
4
1
10  
10  
10  
10  
(mA)  
1
10  
10  
10  
10  
I
(mA)  
C
C
IC/IB = 10.  
IC/IB = 20.  
(1) Tamb = 150 °C.  
(2) amb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 150 °C.  
(2) amb = 25 °C.  
(3) Tamb = 55 °C.  
T
T
Fig.6 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.7 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
MLD873  
MLD874  
4
4
10  
10  
handbook, halfpage  
handbook, halfpage  
V
V
CEsat  
CEsat  
(mV)  
(mV)  
3
3
10  
10  
2
2
10  
10  
(1)  
(1)  
(2)  
(2)  
(3)  
(3)  
10  
10  
10  
10  
1  
2
3
I
4
1  
2
3
I
4
1
10  
10  
10  
10  
1
10  
10  
10  
10  
(mA)  
(mA)  
C
C
IC/IB = 50.  
IC/IB = 100.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
Fig.8 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.9 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
2004 Jan 09  
6
Philips Semiconductors  
Product specification  
50 V; 3 A NPN low VCEsat (BISS) transistor  
PBSS4350T  
MLD875  
3
10  
handbook, halfpage  
R
CEsat  
()  
2
10  
10  
1
(1)  
1  
10  
(2)  
2
(3)  
2  
10  
1  
3
4
10  
1
10  
10  
10  
10  
(mA)  
I
C
IC/IB = 20.  
(1) Tamb = 150 °C.  
(2) amb = 25 °C.  
(3) Tamb = 55 °C.  
T
Fig.10 Equivalent on-resistance as a function of  
collector current; typical values.  
2004 Jan 09  
7
Philips Semiconductors  
Product specification  
50 V; 3 A NPN low VCEsat (BISS) transistor  
PBSS4350T  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M  
B
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
97-02-28  
99-09-13  
SOT23  
TO-236AB  
2004 Jan 09  
8
Philips Semiconductors  
Product specification  
50 V; 3 A NPN low VCEsat (BISS) transistor  
PBSS4350T  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Jan 09  
9
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/02/pp10  
Date of release: 2004 Jan 09  
Document order number: 9397 750 12437  
配单直通车
PBSS4350SSJ产品参数
型号:PBSS4350SSJ
Brand Name:Nexperia
生命周期:Active
零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8
制造商包装代码:SOT96-1
Reach Compliance Code:compliant
风险等级:5.71
最大集电极电流 (IC):2.7 A
集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G8
元件数量:2
端子数量:8
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN
表面贴装:YES
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
最大关闭时间(toff):520 ns
最大开启时间(吨):104 ns
Base Number Matches:1
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