PS21A79现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号PS21A79的概述

PS21A79芯片概述及其应用一、引言随着现代电子技术的迅猛发展，各类芯片在我们日常生活和工业应用中的重要性日益凸显。芯片PS21A79作为一种集成电路产品，具备了多种先进功能，其应用范围涵盖了通信、消费电子等多个领域。本文将对PS21A79芯片进行详细的参数介绍、制造厂商、包装与封装、引脚及电路图说明，以及实际应用案例分析。二、芯片概述 PS21A79是一款高性能的集成电路，广泛应用于数字信号处理和快速数据传输的场合。该芯片凭借其出色的计算能力和兼容性，成为众多电子设备的核心组件。PS21A79的架构设计不仅具备高效率的处理能力，同时还注重了功耗的控制，适合在多种环境下稳定工作。三、详细参数 1. 电源电压 PS21A79芯片工作电压范围通常为3.3V到5V，支持广泛的电源配置。其供电要求可在电子设计中保持灵活性。 2. 处理速度该芯片的工作频率一般在100MHz到...

产品型号PS21A79的Datasheet PDF文件预览

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

PS21A79

MAIN FUNCTION AND RATINGS

z 3 phase inverter with N-side open emitter structure

z 600V / 50A (CSTBT)

APPLICATION

z AC100 ~ 200Vrms class, motor control

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS

● For P-side

● For N-side

: Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection

: Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),

● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)

● Temperature monitoring : Analog output of LVIC temperature

● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)

● UL Approved : File No. E80276

MAXIMUM RATINGS (T_j= 25°C, unless otherwise noted)

INVERTER PART

Symbol

V_CC

Parameter

Supply voltage

Condition

Applied between P-NU,NV,NW

Ratings

450

Unit

V_CC(surge)

V_CES

±I_C

Supply voltage (surge)

500

Collector-emitter voltage

Each IGBT collector current

Each IGBT collector current (peak)

Collector dissipation

600

T_C= 25°C

±I_CP

T_C= 25°C, less than 1ms

T_C= 25°C, per 1 chip

100

P_C

142

°C

T_j

Junction temperature

-20~+150

CONTROL (PROTECTION) PART

Symbol

V_D

Parameter

Control supply voltage

Input voltage

Condition

Applied between V_P1-V_PC, V_N1-V_NC

Applied between V_UFB-V_UFS, V_VFB-V_VFS, V_WFB-V_WFS

Applied between U_P, V_P, W_P-V_PC, U_N, V_N, W_N-V_NC

Applied between F_O-V_NC

Ratings

Unit

V_DB

V_IN

V_FO

I_FO

-0.5~V_D+0.5

Fault output supply voltage

Fault output current

Sink current at F_Oterminal

V_SC

Current sensing input voltage

Applied between CIN-V_NC

-0.5~V_D+0.5

TOTAL SYSTEM

Symbol

Parameter

Condition

V_D= 13.5~16.5V, Inverter Part

T_j= 125°C, non-repetitive, less than 2μs

Ratings

400

Unit

Self protection supply voltage limit

(Short circuit protection capability)

Module case operation temperature

V_CC(PROT)

T_C

(Note 1)

-20~+100

-40~+125

°C

T_stg

Storage temperature

60Hz, Sinusoidal, AC 1minute, between connected all

pins and heat-sink plate

V_iso

Isolation voltage

2500

V_rms

Note 1: Tc measurement point is described in Fig.1.

THERMAL RESISTANCE

Limits

Typ.

Symbol

Parameter

Condition

Min.

Unit

Max.

R_th(j-c)Q

R_th(j-c)F

Junction to case thermal

Inverter IGBT part (per 1/6 module)

Inverter FWDi part (per 1/6 module)

0.88

1.78

°C/W

resistance

(Note 2)

Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface

of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the

thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2°C/W (per 1/6 module, grease thickness: 20μm, thermal

conductivity: 1.0W/m•k).

March 2011

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

Fig. 1: T_CMEASUREMENT POINT

Measurement point for Tc

ELECTRICAL CHARACTERISTICS (T_j= 25°C, unless otherwise noted)

INVERTER PART

Limits

Typ.

1.55

1.65

1.70

2.40

0.40

3.00

0.60

0.30

Symbol

Parameter

Condition

Unit

Min.

Max.

2.05

2.10

2.20

3.60

0.60

4.20

1.20

T_j= 25°C

Collector-emitter saturation

voltage

V_D=V_DB= 15V

V_IN= 5V, I_C= 50A

V_CE(sat)

T_j= 125°C

V_EC

t_on

FWDi forward voltage

-I_C= 50A, V_IN= 0V

1.80

μs

t_C(on)

t_off

t_C(off)

t_rr

_CC= 300V, V_D= V_DB= 15V

I_C= 50A, T_j= 125°C, V_IN= 0↔5 V

Inductive Load (upper-lower arm)

Switching times

T_j= 25°C

Collector-emitter cut-off

current

I_CES

V_CE=V_CES

T_j= 125°C

CONTROL (PROTECTION) PART

Limits

Symbol

I_D

I_DB

Parameter

Condition

Unit

Min.

Typ.

Max.

5.50

0.55

V_D= 15V, V_IN= 0V

V_D= 15V, V_IN= 5V

Circuit current

Total of V_P1-V_PC, V_N1-V_NC

V_D= V_DB= 15V, V_IN= 0V

V_D= V_DB= 15V, V_IN= 5V

V_UFB-V_UFS, V_VFB-V_VFS,

V_WFB-V_WFS

Circuit current

-20°C≤Tj≤125°C, Rs= 40.2Ω (±1%),

Not connecting outer shunt resistors to

NU,NV,NW terminals

I_SC

Short circuit trip level

(Note 3)

UV_DBt

UV_DBr

UV_Dt

UV_Dr

V_FOH

V_FOL

t_FO

Trip level

Reset level

10.0

10.5

10.3

10.8

4.9

12.0

12.5

13.0

P-side

N-side

Control supply under-voltage

protection

T_j≤125°C

Trip level

Reset level

V_SC= 0V, F_Oterminal pull-up to 5V by 10kΩ

Fault output voltage

V_SC= 1V, I_FO= 1mA

0.95

Fault output pulse width

Input current

C_FO=22nF

(Note 4)

1.6

2.4

1.0

2.3

1.4

3.63

I_IN

V_IN= 5V

0.7

1.5

2.6

2.1

3.69

V_th(on)

V_th(off)

V_OT

ON threshold voltage

OFF threshold voltage

Temperature output

2.1

Applied between U_P, V_P, W_P-V_PC, U_N, V_N, W_N-V_NC

0.8

LVIC temperature = 85°C (Note 5)

3.57

Note 3 : Short circuit protection can work for N-side IGBTs only. Isc level can change by sense resistance. For details, please refer the application note for this

DIPIPM or contact us. And in that case, it should be for sense resistor to be larger resistance than the value mentioned above.

Note 4 : Fault signal is output when short circuit or N-side control supply under-voltage protective functions operate. The fault output pulse-width t_FOdepends on

the capacitance value of C_FO

(C_FO(typ.) = t_FOx (9.1 x 10^-6) [F])

Note 5 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level

that user defined, controller (MCU) should stop the DIPIPM. And this output might exceed 5V when temperature rises excessively, so it is recommended

for protection of control part like MCU to insert a clamp Di between supply (e.g. 5V) for control part and this output. Temperature of LVIC vs. V_OToutput

characteristics is described in Fig.2

March 2011

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

Fig.2 Temperature of LVIC - V_OToutput characteristics

5.0

4.5

4.26

4.0

110±10°C

3.63

3.5

85±3°C

3.0

2.5

60±10°C

100

110 120

130

LVIC Temperature (°C)

MECHANICAL CHARACTERISTICS AND RATINGS

Limits

Typ.

Parameter

Condition

Unit

Min.

Max.

1.47

Mounting torque

Mounting screw : M4

Load 19.6N

Recommended 1.18N・m

0.98

1.18

N・m

EIAJ-

ED-4701

EIAJ-

Terminal pulling strength

Terminal bending strength

Load 9.8N, 90deg. bend

times

ED-4701

Weight

Heat-sink flatness

(Note 6)

-50

100

μm

Note 6: Measurement point of heat-sink flatness

March 2011

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

RECOMMENDED OPERATION CONDITIONS

Limits

Typ.

300

15.0

Symbol

Parameter

Supply voltage

Condition

Unit

Min.

Max.

400

16.5

18.5

V_CC

V_D

Applied between P-NU, NV, NW

Control supply voltage

Applied between V_P1-V_PC, V_N1-V_NC

13.5

13.0

-1

V_DB

Applied between V_UFB-V_UFS, V_VFB-V_VFS, V_WFB-V_WFS

ΔV_D, ΔV_DBControl supply variation

t_deadArm shoot-through blocking time For each input signal, T_C≤ 100°C

f_PWM

V/μs

μs

2.2

PWM input frequency

Allowable r.m.s. current

T_C≤ 100°C, T_j≤ 125°C

kHz

V_CC= 300V, V_D= 15V, P.F = 0.8,

f_PWM= 5kHz

23.6

13.8

I_O

Sinusoidal PWM

Arms

_PWM= 15kHz

T_C≤ 100°C, T_j≤ 125°C

(Note 7)

PWIN(on)

(Note 8)

1.1

3.0

200≤ V_CC≤ 350V, 13.5≤ V_D≤ 16.5V,

13.0≤ V_DB≤ 18.5V, -20°C ≤ T_C≤ 100°C,

N line wiring inductance less than 10nH

(Note 9)

I_C≤50A

Minimum input pulse width

μs

PWIN(off)

50<I_C≤85A

5.0

V_NC

T_j

V_NCvariation

Between V_NC-NU, NV, NW (including surge)

-5.0

-20

+5.0

Junction temperature

+125

°C

Note 7: The allowable r.m.s. current value depends on the actual application conditions.

8: DIPIPM might not make response to the input on signal with pulse width less than PWIN (on).

9: IPM might make no response or delayed response (at P-side IGBT only) for the input signal with off pulse width less than PWIN(off).

Please refer Fig. 3 about delayed response.

Fig. 3 About Delayed Response Against Shorter Input Off Signal Than PWIN(off) (P-side only)

P-side Control Input

Internal IGBT Gate

Output Current Ic

Solid line

…Off pulse width ≥ PWIN(off);

Turn on time t1 (Normal delay)

Broken line

…Off pulse width < PWIN(off);

Turn on time t2 (Longer delay in some cases)

March 2011

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

Fig. 4 INTERNAL CIRCUIT

V_UFB

V_UFS

HVIC

IGBT1

IGBT2

V_P1

U_P

V_CCV_B

Di1

Di2

IN HO

COM

V_S

V_VFB

V_VFS

HVIC

V_P1

V_P

V_CC

V_B

IN HO

COM V_S

V_WFB

V_WFS

HVIC

V_P1

W_P

V_PC

IGBT3

IGBT4

V_CCV_B

Di3

Di4

IN HO

COM V_S

LVIC

U_OUT

V_N1

V_CC

IGBT5

IGBT6

Di5

Di6

V_OUT

U_N

V_N

W_N

U_N

V_N

W_N

W_OUT

V_NO

V_OT

V_NC

V_OT

GND

CIN

CFO

Vsc

CIN

C_FO

March 2011

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

Fig. 5 TIMING CHARTS OF THE DIPIPM PROTECTIVE FUNCTIONS

[A] Short-Circuit Protection (N-side only with the external sense resistor and RC filter)

a1. Normal operation: IGBT ON and outputs current.

a2. Short circuit current detection (SC trigger) (It is recommended to set RC time constant 1.5~2.0μs so that IGBT shut down within 2.0μs when SC.)

a3. All N-side IGBT's gates are hard interrupted.

a4. All N-side IGBTs turn OFF.

a5. F_Ooutputs with a fixed pulse width determined by the external capacitor C_FO

a6. Input = “L”: IGBT OFF

a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LÆH).

(IGBT of each phase can return to normal state by inputting ON signal to each phase.)

a8. Normal operation: IGBT ON and outputs current.

Lower-side control

input

SET

RESET

Protection circuit state

Internal IGBT gate

SC trip current level

Output current Ic

SC reference voltage

Delay by RC filtering

Sense voltage of

the sense resistor

Error output Fo

[B] Under-Voltage Protection (N-side, UV_D)

b1. Control supply voltage V _Dexceeds under voltage reset level (UV_Dr), but IGBT turns ON when inputting next ON signal (LÆH).

(IGBT of each phase can return to normal state by inputting ON signal to each phase.)

b2. Normal operation: IGBT ON and outputs current.

b3. V_Dlevel drops to under voltage trip level. (UV_Dt).

b4. All N-side IGBTs turn OFF in spite of control input condition.

b5. Fo outputs for the period determined by the capacitance C_FO,but output is extended during V_Dkeeps below UV_Dr.

b6. V_Dlevel reaches UV_Dr.

b7. Normal operation: IGBT ON and outputs current.

Control input

RESET

SET

Protection circuit state

UV_Dr

Control supply voltage V_D

UV_Dt

Output current Ic

Error output Fo

March 2011

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

[C] Under-Voltage Protection (P-side, UV_DB

)

c1. Control supply voltage V_DBrises. After the voltage reaches under voltage reset level UV_DBr, IGBT can turn on when inputting next ON

signal (LÆH).

c2. Normal operation: IGBT ON and outputs current.

c3. V_DBlevel drops to under voltage trip level (UV_DBt).

c4. IGBT of corresponding phase only turns OFF in spite of control input signal level, but there is no F_Osignal output.

c5. V_DBlevel reaches UV_DBr

c6. Normal operation: IGBT ON and outputs current.

Control input

RESET

SET

RESET

Protection circuit state

UV_DBr

Control supply voltage V_DB

UV_DBt

Output current Ic

Error output Fo

Keep High-level (no fault output)

Fig. 6 MCU I/O INTERFACE CIRCUIT

5V line

10kΩ

DIPIPM

U_P,V_P,W_P,U_N,V_N,W_N

MCU

3.3kΩ(min)

V_NC(Logic)

Note)

Design for input RC filter depends on the PWM control scheme used in the application and the wiring impedance of the printed circuit board.

The DIPIPM input signal interface integrates a 3.3kΩ(min) pull-down resistor. Therefore, when using RC filter, be careful to satisfy the turn-on

threshold voltage requirement.

Fo output is open drain type. It should be pulled up to the positive side of 5V or 15V power supply with the resistor that limits Fo sink current I_Fo

under 1mA. In the case of pulling up to 5V supply, over 5.1kΩ is needed. (10kΩ is recommended.)

March 2011

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

Fig. 7 AN EXAMPLE OF APPLICATION CIRCUIT

P(40)

U(39)

U_P(1)

IGBT1

IGBT2

Di1

Di2

V_P1(3)

HVIC

V_UFB(4)

V_UFS(6)

C1 D1 C2

V_P(7)

V_P1(9)

HVIC

V_VFB(10)

V_VFS(12)

V(38)

C1 D1 C2

W_P(13)

V_P1(14)

V_PC(15)

IGBT3

IGBT4

Di3

Di4

Di5

Di6

V_WFB(16)

W(37)

V_WFS(18)

C1 D1 C2

U_N(27)

V_N(28)

W_N(29)

C_FO(25)

NU(36)

NV(35)

NW(34)

IGBT5

IGBT6

LVIC

Fo(26)

V_OT(23)

15V

V_D

V_N1(21)

V_NC(22)

V_NO

V_SC(19)

CIN(24)

Sense

resistor

Note

1 :If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect control GND

and power GND at only a point at which NU, NV, NW are connected to power GND line.

2 :To prevent surge destruction, the wiring between the smoothing capacitor and the P,N1 terminals should be as short as possible. Generally inserting a

0.1μ~0.22μF snubber capacitor C3 between the P-N1 terminals is recommended.

3 :The time constant R1C4 of RC filter for preventing protection circuit malfunction should be selected in the range of 1.5μs~2μs. SC interrupting time might vary

with the wiring pattern. Tight tolerance, temp-compensated type is recommended for R1,C4. When R1 is too small, it will leads to delay of protection. So R1

should be min. 10 times larger resistance than Rs. (Over 100 times is recommended.)

4 :All capacitors should be mounted as close to the terminals of the DIPIPM as possible. (C1: good temperature, frequency characteristic electrolytic type, and

C2: 0.22μ~2.0μF, good temperature, frequency and DC bias characteristic ceramic type are recommended.)

5 :It is recommended to insert a Zener diode D1 (24V/1W) between each pair of control supply terminals to prevent surge destruction.

6 :To prevent erroneous SC protection, the wiring from V_SCterminal to CIN filter should be divided at the point D that is close to the terminal of sense resistor.

And the wiring should be patterned as short as possible.

7 :For sense resistor, the variation within 1%(including temperature characteristics), low inductance type is recommended. And the over 1/8W is recommended,

but it is necessary to evaluate in your real system finally.

8 :To prevent erroneous operation, the wiring of A, B, C should be as short as possible.

9 :Fo output is open drain type. It should be pulled up to the positive side of 5V or 15V power supply with the resistor that limits Fo sink current I_Founder 1mA. In

the case pull up to 5V supply, over R2=5.1kΩ is needed. (10kΩ is recommended.)

10 :Error signal output width (t_Fo) can be set by the capacitor connected to C_FOterminal. C_FO(typ.) = t_Fox (9.1 x 10^-6) (F)

11 :High voltage (V_RRM=600V or more) and fast recovery type (trr=less than 100ns or less) diode D2 should be used in the bootstrap circuit.

12 :If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause erroneous operation. To avoid such problem, voltage

ripple of control supply line should meet dV/dt ≤+/-1V/μs, Vripple≤2Vp-p.

13 :Input drive is High-Active type. There is a 3.3kΩ(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each input

should be patterned as short as possible. When using RC filter R3C5, it is necessary to confirm the input signal level to meet the turn-on and turn-off threshold

voltage. Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.

March 2011

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

Fig. 8 PACKAGE OUTLINES

Dimensions in mm

March 2011

MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>

PS21A79

TRANSFER-MOLD TYPE

INSULATED TYPE

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more

reliable, but these are always the possibility that trouble may occur with them. Trouble with semiconductors may

lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your

circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary circuits, (2) use of

non-flammable material or (3) prevention against any malfunction or mishap.

Notice regarding these materials

These materials are intended as reference to assist our customers in the selection of the Mitsubishi

semiconductor product best suited to the customer’s application; they do not convey any license under any

intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or third party.

Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s

rights, originating in the use of any product data, diagrams, chart, programs, algorithms, or circuit application

examples contained in these materials.

All information contained in these materials, including product data, diagrams, charts, programs and algorithms

represents information on products at the time of publication of these materials, and are subject to change by

Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore

recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor

product distributor for the latest product information before purchasing a product listed herein. The information

described here may contain inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no

responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay

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When using any or all of the information contained in these materials, including product data, diagrams, charts,

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Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system

that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric

Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product

contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,

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The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in

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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for

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DIPIPM and CSTBT are registered trademarks of MITSUBISHI ELECTRIC CORPORATION.

March 2011

PS21A79相关文章

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PS21A79产品参数

型号:	PS21A79
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	POWEREX INC
包装说明：	,
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	7.99
Is Samacsys：	N
模拟集成电路 - 其他类型：	AC MOTOR CONTROLLER
JESD-30 代码：	R-XXMA-X42
功能数量：	1
端子数量：	42
最大输出电流：	100 A
封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大供电电压 (Vsup)：	16.5 V
最小供电电压 (Vsup)：	13.5 V
标称供电电压 (Vsup)：	15 V
表面贴装：	NO
端子形式：	UNSPECIFIED
端子位置：	UNSPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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