PSS20S92F6原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

< Dual-In-Line Package Intelligent Power Module >

PSS20S92F6-AG

PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

OUTLINE

MAIN FUNCTION AND RATINGS

 3 phase DC/AC inverter

 600V / 20A (CSTBT)

 N-side IGBT open emitter

 Built-in bootstrap diodes with current limiting resistor

APPLICATION

 AC 100~240Vrms(DC voltage:400V or below) class

low power motor control

TYPE NAME

PSS20S92F6-AG

PSS20S92E6-AG

With temperature output function

With OT protection function

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS

● For P-side

● For N-side

: Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection

: Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),

Over temperature protection (OT, PSS20S92E6-AG only)

● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply) and OT fault

● Temperature output : Outputting LVIC temperature by analog signal (PSS20S92F6-AG only)

● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)

● UL Recognized : UL1557 File E323585

INTERNAL CIRCUIT

P(24)

IGBT1

V_UFB(2)

Di1

V_VFB(3)

U(23)

IGBT2

Di2

V_WFB(4)

HVIC

U_P(5)

V_P(6)

V(22)

IGBT3

IGBT4

Di3

Di4

Di5

W_P(7)

V_P1(8)

W(21)

V_NC(9)

U_N(10)

V_N(11)

W_N(12)

NU(20)

IGBT5

IGBT6

V_N1(13)

F_O(14)

NV(19)

NW(18)

LVIC

Di6

CIN(15)

V_NC(16)

V_OT(17)

·Built-in temperature output type: V_OT

(PSS**S92F6-AG)

·Built-in OT type: NC (No Connection)

(PSS**S92E6-AG)

Publication Date : October 2013

1

< Dual-In-Line Package Intelligent Power Module >

PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

MAXIMUM RATINGS (T_j= 25°C, unless otherwise noted)

INVERTER PART

Symbol

V_CC

Parameter

Supply voltage

Condition

Applied between P-NU,NV,NW

Ratings

450

Unit

V

V_CC(surge)

V_CES

±I_C

Supply voltage (surge)

500

V

Collector-emitter voltage

Each IGBT collector current

Each IGBT collector current (peak)

Collector dissipation

600

V

T_C= 25°C

20

A

±I_CP

T_C= 25°C, less than 1ms

T_C= 25°C, per 1 chip

40

A

P_C

33.3

W

°C

T_j

Junction temperature

(Note 1)

-30~+150

Note1: The maximum junction temperature rating of built-in power chips is 150°C(@Tc≤100°C).However, to ensure safe operation of DIPIPM, the average

junction temperature should be limited to Tj(Ave)≤125°C (@Tc≤100°C).

CONTROL (PROTECTION) PART

Symbol

V_D

Parameter

Control supply voltage

Input voltage

Condition

Applied between V_P1-V_NC, V_N1-V_NC

Applied between V_UFB-U, V_VFB-V, V_WFB-W

Applied between U_P, V_P, W_P-V_PC, U_N, V_N, W_N-V_NC

Applied between F_O-V_NC

Ratings

20

Unit

V

V_DB

V_IN

V_FO

I_FO

20

V

-0.5~V_D+0.5

1

V

Fault output supply voltage

Fault output current

V

Sink current at F_Oterminal

mA

V

V_SC

Current sensing input voltage

Applied between CIN-V_NC

-0.5~V_D+0.5

TOTAL SYSTEM

Symbol

Parameter

Self protection supply voltage limit

(Short circuit protection capability)

Condition

V_D= 13.5~16.5V, Inverter Part

T_j= 125°C, non-repetitive, less than 2μs

Ratings

400

Unit

V

V_CC(PROT)

T_C

Module case operation temperature

Storage temperature

Measurement point of Tc is provided in Fig.1

-30~+100

-40~+125

°C

T_stg

60Hz, Sinusoidal, AC 1min, between connected all pins

and heat sink plate

V_iso

Isolation voltage

1500

V_rms

Fig. 1: T_CMEASUREMENT POINT

Control terminals

DIPIPM

11.6mm

3mm

IGBT chip position

Tc point

Heat sink side

Power terminals

THERMAL RESISTANCE

Limits

Typ.

Symbol

Parameter

Condition

Unit

Min.

Max.

R_th(j-c)Q

R_th(j-c)F

Inverter IGBT part (per 1/6 module)

Inverter FWDi part (per 1/6 module)

-

3.0

3.9

K/W

Junction to case thermal

resistance

(Note 2)

Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of

DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal

conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•K).

Publication Date : October 2013

2

< Dual-In-Line Package Intelligent Power Module >

PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

ELECTRICAL CHARACTERISTICS (T_j= 25°C, unless otherwise noted)

INVERTER PART

Limits

Typ.

1.65

1.80

0.90

2.50

1.15

0.50

1.25

0.15

0.30

-

Symbol

V_CE(sat)

Parameter

Condition

I_C= 20A, T_j= 25°C

Unit

V

Min.

Max.

2.00

2.15

1.10

3.00

1.55

0.80

1.75

0.30

-

Collector-emitter saturation

voltage

V_D=V_DB= 15V, V_IN= 5V

V_IN= 0V, -I_C= 20A

I_C= 20A, T_j= 125°C

I_C=2.0A, T_j= 25°C

-

V_EC

t_on

FWDi forward voltage

-

V

0.75

μs

t_C(on)

t_off

t_C(off)

t_rr

-

V

_CC= 300V, V_D= V_DB= 15V

Switching times

I_C= 20A, T_j= 125°C, V_IN= 0↔5V

Inductive Load (upper-lower arm)

V_CE=V_CES

T_j= 25°C

1

Collector-emitter cut-off

current

I_CES

mA

T_j= 125°C

-

10

CONTROL (PROTECTION) PART

Symbol Parameter

Limits

Condition

Unit

mA

Min.

-

Typ.

Max.

2.80

0.10

0.505

12.0

12.5

13.0

2.91

1.39

140

-

V_D=15V, V_IN=0V

V_D=15V, V_IN=5V

-

I_D

Total of V_P1-V_NC, V_N1-V_NC

Each part of V_UFB-U,

-

Circuit current

V_D=V_DB=15V, V_IN=0V

V_D=V_DB=15V, V_IN=5V

-

I_DB

V

_VFB-V, V_WFB-W

-

(Note 3)

V_SC(ref)

UV_DBt

UV_DBr

UV_Dt

Short circuit trip level

V_D= 15V

0.455

7.0

10.3

10.8

2.63

0.88

100

-

0.480

10.0

-

V

Trip level

P-side Control supply

under-voltage protection(UV)

Reset level

V

T_j≤125°C

Trip level

V

N-side Control supply

under-voltage protection(UV)

UV_Dr

Reset level

-

V

2.77

1.13

120

10

V

LVIC Temperature=90°C

LVIC Temperature=25°C

Trip level

Temperature Output

(PSS**S92F6-AG)

V_OT

Pull down R=5kΩ (Note 4)

V

OT_t

V_D= 15V

°C

V

Over temperature protection

(OT, PSS**S92E6-AG) (Note5)

OT_rh

V_FOH

V_FOL

t_FO

Detect LVIC temperature

Hysteresis of trip-reset

V_SC= 0V, F_Oterminal pulled up to 5V by 10kΩ

4.9

-

Fault output voltage

V_SC= 1V, I_FO= 1mA

-

0.95

-

V

(Note 6)

Fault output pulse width

Input current

20

-

μs

mA

I_IN

V_IN= 5V

0.70

-

0.80

1.00

2.10

1.30

1.50

2.60

-

V_th(on)

V_th(off)

ON threshold voltage

OFF threshold voltage

ON/OFF threshold

hysteresis voltage

Applied between U_P, V_P, W_P, U_N, V_N, W_N-V_NC

V

V_th(hys)

0.35

0.65

-

I_F=10mA including voltage drop by limiting resistor

Included in bootstrap Di

(Note 7)

V_F

R

Bootstrap Di forward voltage

1.1

80

1.7

2.3

V

100

120

Ω

Built-in limiting resistance

Note 3 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating.

Note 4 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that

user defined, controller (MCU) should stop the DIPIPM. Temperature of LVIC vs. V_OToutput characteristics is described in Fig. 3.

5 : When the LVIC temperature exceeds OT trip temperature level(OT_t), OT protection works and Fo outputs. In that case if the heat sink dropped off or fixed

loosely, don't reuse that DIPIPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj(150°C).

6 : Fault signal Fo outputs when SC, UV or OT protection works. Fo pulse width is different for each protection modes. At SC failure, Fo pulse width is a fixed

width (=minimum 20μs), but at UV or OT failure, Fo outputs continuously until recovering from UV or OT state. (But minimum Fo pulse width is 20μs.)

7 : The characteristics of bootstrap Di is described in Fig.2.

Fig. 2 Characteristics of bootstrap Di V_F-I_Fcurve (@Ta=25°C) including voltage drop by limiting resistor (Right chart is enlarged chart.)

160

140

120

30

25

20

15

10

5

100

80

60

40

20

0

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V_F[V]

Publication Date : October 2013

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PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

Fig. 3 Temperature of LVIC vs. V_OToutput characteristics

4.0

3.8

3.6

3.4

3.2

Max.

Typ.

Min.

3.0

2.91

2.8

2.77

2.63

2.6

2.4

2.2

2.0

1.8

1.6

60

70

80

90

100

110

120

LVIC temperature (°C)

Fig. 4 V_OToutput circuit

Inside LVIC

of DIPIPM

Temperature

Signal

V_OT

V_NC

MCU

Ref

5kΩ

(1) It is recommended to insert 5kΩ (5.1kΩ is recommended) pull down resistor for getting linear output characteristics at low temperature

below room temperature. When the pull down resistor is inserted between V_OTand V_NC(control GND), the extra circuit current, which is

calculated approximately by V_OToutput voltage divided by pull down resistance, flows as LVIC circuit current continuously. In the case of

using V_OTfor detecting high temperature over room temperature only, it is unnecessary to insert the pull down resistor.

(2) In the case of using V_OTwith low voltage controller like 3.3V MCU, V_OToutput might exceed control supply voltage 3.3V when

temperature rises excessively. If system uses low voltage controller, it is recommended to insert a clamp Di between control supply of

the controller and V_OToutput for preventing over voltage destruction.

(3) In the case of not using V_OT, leave V_OToutput NC (No Connection).

Refer the application note for Super Mini DIPIPM Ver.5 series about the usage of V_OT

.

Publication Date : October 2013

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< Dual-In-Line Package Intelligent Power Module >

PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

MECHANICAL CHARACTERISTICS AND RATINGS

Limits

Typ.

Parameter

Mounting torque

Condition

Unit

Min.

0.59

Max.

0.78

Mounting screw : M3 (Note 8)

Recommended 0.69N·m

EIAJ-ED-4701

0.69

N·m

s

Control terminal: Load 4.9N

Power terminal: Load 9.8N

Control terminal: Load 2.45N

Power terminal: Load 4.9N

90deg. bend

Terminal pulling strength

10

-

Terminal bending strength

EIAJ-ED-4701

2

-

times

Weight

-

8.5

-

g

(Note 9)

Heat-sink flatness

-50

100

μm

Note 8: Plain washers (ISO 7089~7094) are recommended.

Note 9: Measurement point of heat sink flatness

4.6mm

Measurement position

-

+

17.5mm

Heat sink side

-

+

Heat sink side

RECOMMENDED OPERATION CONDITIONS

Limits

Symbol

Parameter

Condition

Unit

Min.

Typ.

300

15.0

-

Max.

V_CC

Supply voltage

Applied between P-NU, NV, NW

Applied between V_P1-V_NC, V_N1-V_NC

0

13.5

13.0

-1

400

16.5

18.5

+1

V

V_D

Control supply voltage

Control supply variation

Arm shoot-through blocking time

PWM input frequency

V_DB

Applied between V_UFB-U, V_VFB-V, V_WFB-W

V

ΔV_D, ΔV_DB

t_dead

V/μs

μs

For each input signal

1.0

-

f_PWM

T_C≤ 100°C, T_j≤ 125°C

-

20

kHz

V_CC= 300V, V_D= 15V, P.F = 0.8,

Sinusoidal PWM

f_PWM= 5kHz

-

10.0

6.0

I_O

Allowable r.m.s. current

Arms

f_PWM= 15kHz

(Note 11)

T_C≤ 100°C, T_j≤ 125°C

(Note10)

PWIN(on)

PWIN(off)

V_NC

0.7

-5.0

-20

-

Minimum input pulse width

μs

-

V_NCvariation

Between V_NC-NU, NV, NW (including surge)

+5.0

+125

V

T_j

Junction temperature

°C

Note 10: Allowable r.m.s. current depends on the actual application conditions.

11: DIPIPM might not make response if the input signal pulse width is less than PWIN(on), PWIN(off).

Publication Date : October 2013

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PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

Fig. 5 Timing Charts of The DIPIPM Protective Functions

[A] Short-Circuit Protection (N-side only with the external shunt resistor and RC filter)

a1. Normal operation: IGBT ON and outputs current.

a2. Short circuit current detection (SC trigger)

(It is recommended to set RC time constant 1.5~2.0μs so that IGBT shut down within 2.0μs when SC.)

a3. All N-side IGBT's gates are hard interrupted.

a4. All N-side IGBTs turn OFF.

a5. F_Ooutputs for t_Fo=minimum 20μs.

a6. Input = “L”: IGBT OFF

a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LH).

(IGBT of each phase can return to normal state by inputting ON signal to each phase.)

a8. Normal operation: IGBT ON and outputs current.

Lower-side control

input

a6

SET

RESET

Protection circuit state

Internal IGBT gate

a3

a4

SC trip current level

a1

a8

Output current Ic

a7

a2

SC reference voltage

Sense voltage of

the shunt resistor

Delay by RC filtering

Error output Fo

a5

[B] Under-Voltage Protection (N-side, UV_D)

b1. Control supply voltage V _Dexceeds under voltage reset level (UV_Dr), but IGBT turns ON by next ON signal (LH).

(IGBT of each phase can return to normal state by inputting ON signal to each phase.)

b2. Normal operation: IGBT ON and outputs current.

b3. V_Dlevel drops to under voltage trip level. (UV_Dt).

b4. All N-side IGBTs turn OFF in spite of control input condition.

b5. Fo outputs for t_Fo=minimum 20μs_,but output is extended during V_Dkeeps below UV_Dr.

b6. V_Dlevel reaches UV_Dr.

b7. Normal operation: IGBT ON and outputs current.

Control input

RESET

b1

SET

Protection circuit state

UV_Dr

b6

Control supply voltage V_D

UV_Dt

b3

b4

b7

b2

Output current Ic

Error output Fo

b5

Publication Date : October 2013

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PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

[C] Under-Voltage Protection (P-side, UV_DB

)

c1. Control supply voltage V_DBrises. After the voltage reaches under voltage reset level UV_DBr, IGBT turns on by next ON signal (LH).

c2. Normal operation: IGBT ON and outputs current.

c3. V_DBlevel drops to under voltage trip level (UV_DBt).

c4. IGBT of the correspond phase only turns OFF in spite of control input signal level, but there is no F_Osignal output.

c5. V_DBlevel reaches UV_DBr

.

c6. Normal operation: IGBT ON and outputs current.

Control input

RESET

c1

SET

RESET

Protection circuit state

UV_DBr

c3

UV_DBt

Control supply voltage V_DB

c5

c2

c6

c4

Output current Ic

Error output Fo

Keep High-level (no fault output)

[D] Over Temperature Protection (N-side, Detecting LVIC temperature)

d1. Normal operation: IGBT ON and outputs current.

d2. LVIC temperature exceeds over temperature trip level(OT_t).

d3. All N-side IGBTs turn OFF in spite of control input condition.

d4. Fo outputs for t_Fo=minimum 20μs_,but output is extended during LVIC temperature keeps over OT_t.

d5. LVIC temperature drops to over temperature reset level.

d6. Normal operation: IGBT turns on by next ON signal (LH).

(IGBT of each phase can return to normal state by inputting ON signal to each phase.)

Control input

RESET

SET

d2

Protection circuit state

Temperature of LVIC

Output current Ic

OT_t

d5

OT_t- OT_rh

d1

d6

d3

d4

Error output Fo

Publication Date : October 2013

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< Dual-In-Line Package Intelligent Power Module >

PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

Fig. 6 Example of Application Circuit

Bootstrap negative electrodes

should be connected to U,V,W

terminals directly and separated

from the main output wires

P(24)

U(23)

IGBT1

C1

D1C2

V_UFB(2)

V_VFB(3)

V_WFB(4)

Di1

Di2

+

IGBT2

IGBT3

HVIC

U_P(5)

V_P(6)

W_P(7)

V_P1(8)

V(22)

M

Di3

W(21)

C2

+

V_NC(9)

C3

IGBT4

Di4

Di5

Di6

U_N(10)

V_N(11)

W_N(12)

NU(20)

NV(19)

NW(18)

IGBT5

IGBT6

5V

Fo(14)

LVIC

V_OT(17)

5kΩ

Built-in temperature

output type only

(PSS**S92F6-AG)

15V V_D

V_N1(13)

V_NC(16)

Long wiring here might

cause short circuit failure

+

C1

D1

C2

C

D

Long wiring here might cause SC

level fluctuation and malfunction.

CIN(15)

B

Long GND wiring here might

generate noise to input signal and

cause IGBT malfunction.

R1

Shunt

resistor

C4

A

N1

Power GND wiring

Control GND wiring

(1) If control GND is connected with power GND by common broad pattern, it may cause malfunction by power GND fluctuation.

It is recommended to connect control GND and power GND at only a point N1 (near the terminal of shunt resistor).

(2) It is recommended to insert a Zener diode D1(24V/1W) between each pair of control supply terminals to prevent surge destruction.

(3) To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible.

Generally a 0.1-0.22μF snubber capacitor C3 between the P-N1 terminals is recommended.

(4) R1, C4 of RC filter for preventing protection circuit malfunction is recommended to select tight tolerance, temp-compensated type.

The time constant R1C4 should be set so that SC current is shut down within 2μs. (1.5μs~2μs is general value.) SC interrupting time

might vary with the wiring pattern, so the enough evaluation on the real system is necessary.

(5) To prevent malfunction, the wiring of A, B, C should be as short as possible.

(6) The point D at which the wiring to CIN filter is divided should be near the terminal of shunt resistor. NU, NV, NW terminals should be

connected at near NU, NV, NW terminals.

(7) All capacitors should be mounted as close to the terminals as possible. (C1: good temperature, frequency characteristic electrolytic

type and C2:0.22μ-2μF, good temperature, frequency and DC bias characteristic ceramic type are recommended.)

(8) Input drive is High-active type. There is a minimum 3.3kΩ pull-down resistor in the input circuit of IC. To prevent malfunction, the

wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on

and turn-off threshold voltage.

(9) Fo output is open drain type. It should be pulled up to MCU or control power supply (e.g. 5V,15V) by a resistor that makes I_Foup to

1mA. (I_FOis estimated roughly by the formula of control power supply voltage divided by pull-up resistance. In the case of pulled up to

5V, 10kΩ (5kΩ or more) is recommended.)

(10) Thanks to built-in HVIC, direct coupling to MCU without any opto-coupler or transformer isolation is possible.

(11) Two V_NCterminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and

leave another one open.

(12) If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause DIPIPM erroneous operation.

To avoid such problem, line ripple voltage should meet dV/dt ≤+/-1V/μs, Vripple≤2Vp-p.

(13) For DIPIPM, it isn't recommended to drive same load by parallel connection with other phase IGBT or other DIPIPM.

Publication Date : October 2013

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PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

Fig. 7 MCU I/O Interface Circuit

5V line

Note)

Design for input RC filter depends on PWM control scheme used

in the application and wiring impedance of the printed circuit board.

DIPIPM input signal interface integrates minimum 3.3kΩ

10kΩ

DIPIPM

a

pull-down resistor. Therefore, when inserting RC filter, it is

necessary to satisfy turn-on threshold voltage requirement.

Fo output is open drain type. It should be pulled up to control

power supply (e.g. 5V, 15V) with a resistor that makes Fo sink

current I_Fo1mA or less. In the case of pulled up to 5V supply, 10kΩ

（5kΩ or more） is recommended.

U_P,V_P,W_P,U_N,V_N,W_N

MCU

3.3kΩ(min)

Fo

V_NC(Logic)

Fig. 8 Pattern Wiring Around the Shunt Resistor

NU, NV, NW should be connected

each other at near terminals.

DIPIPM

Wiring Inductance should be less than 10nH.

Each wiring Inductance should be less than 10nH.

Inductance of a copper pattern with

length=17mm, width=3mm is about 10nH.

NU

NV

NW

N1

NU

NV

NW

N1

V_NC

Shunt

resistor

V_NC

GND wiring from V_NCshould

be connected close to the

terminal of shunt resistor.

GND wiring from V_NCshould

be connected close to the

terminal of shunt resistor.

Shunt

resistors

Low inductance shunt resistor like surface mounted (SMD) type is recommended.

Fig. 9 Pattern Wiring Around the Shunt Resistor (for the case of open emitter)

When DIPIPM is operated with three shunt resistors, voltage of each shunt resistor cannot be input to CIN terminal directly. In that case, it is necessary to use

the external protection circuit as below.

DIPIPM

Drive circuit

P

P-side IGBT

U

V

W

External protection circuit

Comparators

N-side IGBT

(Open collector output type)

R

f

C

B

-

5V

NW

NV

NU

C

f

Vref

+

Drive circuit

-

D

OR output

Protection circuit

CIN

+

Vref

V_NC

-

Shunt

resistors

A

+

N1

(1) It is necessary to set the time constant R_fC_fof external comparator input so that IGBT stops within 2μs when short circuit occurs.

SC interrupting time might vary with the wiring pattern, comparator speed and so on.

(2) It is recommended for the threshold voltage Vref to set to the same rating of short circuit trip level (Vsc(ref): typ. 0.48V).

(3) Select the external shunt resistance so that SC trip-level is less than specified value (=1.7 times of rating current).

(4) To avoid malfunction, the wiring A, B, C should be as short as possible.

(5) The point D at which the wiring to comparator is divided should be close to the terminal of shunt resistor.

(6) OR output high level when protection works should be over 0.505V (=maximum Vsc(ref) rating).

Publication Date : October 2013

9

< Dual-In-Line Package Intelligent Power Module >

PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

Fig. 10 Package Outlines

PSS**S92F6-AG, PSS**S92E6-AG

Dimensions in mm

TERMINAL CODE

1-A

1-B

2

NC(V_NC)

NC(V_P1

V_UFB

V_VFB

V_WFB

U_P

)

3

4

5

6

V_P

7

W_P

8

V_P1

9

V_NC*1

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

U_N

V_N

W_N

V_N1

Fo

CIN

V_NC*1

NC / V_OT*2

NW

NV

NU

W

V

U

P

NC

1) 9 & 16 pins (V_NC) are connected inside DIPIPM, please connect either one to the control power supply GND outside and leave another one open.

2) No.17 is V_OTfor built-in temperature output function type (PSS**S92F6-AG) and NC (No Connection) for built-in OT protection function type (PSS**S92E6-AG).

QR Code is registered trademark of DENSO WAVE INCORPORATED in JAPAN and other countries.

Publication Date : October 2013

10

< Dual-In-Line Package Intelligent Power Module >

PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

Revision Record

Rev.

1

Date

Page

-

Revised contents

10/15/2013

New

Publication Date : October 2013

11

< Dual-In-Line Package Intelligent Power Module >

PSS20S92F6-AG, PSS20S92E6-AG

TRANSFER MOLDING TYPE

INSULATED TYPE

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more

reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors

may lead to personal injury, fire or property damage. Remember to give due consideration to safety when

making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi

semiconductor product best suited to the customer’s application; they do not convey any license under any

intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any

third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or

circuit application examples contained in these materials.

•All information contained in these materials, including product data, diagrams, charts, programs and

algorithms represents information on products at the time of publication of these materials, and are subject

to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It

is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized

Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product

listed herein.

The information described here may contain technical inaccuracies or typographical errors. Mitsubishi

Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these

inaccuracies or errors.

Please also pay attention to information published by Mitsubishi Electric Corporation by various means,

including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).

•When using any or all of the information contained in these materials, including product data, diagrams,

charts, programs, and algorithms, please be sure to evaluate all information as a total system before making

a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes

no responsibility for any damage, liability or other loss resulting from the information contained herein.

•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or

system that is used under circumstances in which human life is potentially at stake. Please contact

Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when

considering the use of a product contained herein for any specific purposes, such as apparatus or systems

for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or

in part these materials.

•If these products or technologies are subject to the Japanese export control restrictions, they must be

exported under a license from the Japanese government and cannot be imported into a country other than

the approved destination.

Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of

destination is prohibited.

•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor

for further details on these materials or the products contained therein.

DIPIPM and CSTBT are registered trademarks of MITSUBISHI ELECTRIC CORPORATION.

Publication Date : October 2013

12

型号:	PSS2412-7EPCB
是否Rohs认证：	不符合
生命周期：	Active
包装说明：	,
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.79
模拟集成电路 - 其他类型：	DC-DC REGULATED POWER SUPPLY MODULE
最大输入电压：	80 V
最小输入电压：	29 V
标称输入电压：	50 V
JESD-30 代码：	R-MXMA-X
JESD-609代码：	e0
最大负载调整率：	0.5%
功能数量：	1
输出次数：	1
最高工作温度：	71 °C
最低工作温度：	-25 °C
最大输出电压：	24.14 V
最小输出电压：	23.86 V
标称输出电压：	24 V
封装主体材料：	METAL
封装形状：	RECTANGULAR
封装形式：	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
表面贴装：	NO
温度等级：	COMMERCIAL EXTENDED
端子面层：	TIN LEAD
端子形式：	UNSPECIFIED
端子位置：	UNSPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED
微调/可调输出：	NO
Base Number Matches：	1

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