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产品型号QSD123的概述

芯片QSD123概述 QSD123是一款广泛应用于消费电子及通信领域的多功能集成电路芯片，其设计目标是提供卓越的性能与极高的集成度，支持多种应用场景，包括但不限于音频处理、信号调理和数据转换。该芯片因其独特的电气特性和灵活的功能配置而受到工程师和设计师的青睐。芯片QSD123的详细参数 QSD123的主要参数包括： 1. 工作电压范围：通常在3.0V到5.5V之间，适应不同应用的电源条件。 2. 工作温度范围：-40°C到85°C，保证在极端环境下的可靠性。 3. 取样率：支持高达96kHz的数字音频取样，满足高音质音频处理的需求。 4. 分辨率：提供16位或24位的数据转换能力，适合高保真的音频产品。 5. 总谐波失真（THD）：一般能够保持在0.01%以内，确保音质的清晰度。 6. 动态范围：通常达到110dB，提供良好的信号处理能力。 7. 集成度：内部集成多种功能单元，包括A...

产品型号QSD123的Datasheet PDF文件预览

PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSD122 QSD123 QSD124

PACKAGE DIMENSIONS

0.195 (4.95)

REFERENCE

SURFACE

0.305 (7.75)

0.040 (1.02)

NOM

0.800 (20.3)

MIN

EMITTER

COLLECTOR

SCHEMATIC

0.500 (1.25)

0.100 (2.54) NOM

COLLECTOR

0.240 (6.10)

0.215 (5.45)

0.020 (0.51)

SQ. (2X)

NOTES:

EMITTER

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

DESCRIPTION

The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package.

FEATURES

• NPN Silicon Phototransistor

• Package Type: T-1 3/4

• Notched Emitter: QED12X/QED22X/QED23X

• Narrow Reception Angle: 24°C

• Daylight Filter

• Package Material and Color: Black Epoxy

• High Sensitivity

2001 Fairchild Semiconductor Corporation

DS300361

7/20/01

1 OF 4

www.fairchildsemi.com

PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSD122 QSD123 QSD124

(T = 25°C unless otherwise specified)

ABSOLUTE MAXIMUM RATINGS

A

Parameter

Operating Temperature

Symbol

T_OPR

T_STG

T_SOL-I

T_SOL-F

V_CE

Rating

-40 to +100

240 for 5 sec

260 for 10 sec

30

Unit

°C

V

Storage Temperature

Soldering Temperature (Iron)^(2,3,4)

Soldering Temperature (Flow)^(2,3)

Collector-Emitter Voltage

Emitter-Collector Voltage

Power Dissipation⁽¹⁾

V_EC

5

V

P_D

100

mW

NOTE:

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16” (1.6mm) minimum from housing.

5. ! = 880 nm, AlGaAs.

(TA =25°C)

ELECTRICAL / OPTICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

SYMBOL

MIN

—

30

5

TYP

880

±12

—

MAX

—

UNITS

nm

Deg.

nA

Peak Sensitivity Wavelength

Reception Angle

!

PS

"

—

Collector Emitter Dark Current

Collector Emitter Breakdown

Emitter Collector Breakdown

On-State Collector Current⁽⁵⁾

QSD122

V_CE= 10 V, E_e= 0

I_C= 1 mA

I_CEO

100

—

BV_CEO

BV_ECO

—

V

I_E= 100 µA

—

V

1.00

4.00

6.00

—

7

6.00

QSD123

E_e= 0.5 mW/cm², V_CE= 5 V

I_{C (ON)}

16.00

—

mA

QSD124

Saturation Voltage⁽⁵⁾

E_e= 0.5 mW/cm², I_C= 0.5 mA

V^CC= 5 V, R_L= 100 V IC = 0.2 mA

V_{CE (SAT)}

0.4

—

V

Rise Time

t_r

t_f

—

µs

Fall Time

—

7

—

www.fairchildsemi.com

2 OF 4

7/20/01 DS300361

PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSD122 QSD123 QSD124

Figure 1. Light Current vs. Radiant Intensity

100

10

1

Figure 2. Angular Response Curve

90

100

80

110

70

120

60

130

50

40

140

150

160

170

30

20

10

180

1.0

0

1.0

0.2

0.0

0.2

0.4

0.6

0.8

0.6

0.4

0.1

0.0

0.2

0.4

0.6

0.8

1.0

2

E_e- Radiant Intensity (mW/cm

)

Figure 3. Dark Current vs. Collector - Emitter Voltage

Figure 4. Light Current vs. Collector - Emitter Voltage

10¹

10⁰

10^-1

10^-2

10^-3

10¹

2

I =1mW/cm

e

2

I =0.5mW/cm

e

10⁰

2

I =0.2mW/cm

e

I =0.1mW/cm

e

10^-1

10^-2

10^-3

Normalized to:

= 5V

V

CE

2

I

e

= 0.5mW/cm

o

T

A

= 25 C

0

5

10

15

20

25

30

0.1

1

10

V_CE- Collector-Emitter Voltage (V)

Figure 5. Dark Current vs. Ambient Temperature

10⁴

Normalized to:

V

CE

= 25V

10³

10²

10¹

10⁰

10^-1

o

T

A

= 25 C

V

CE

=25V

V

CE

=10V

-40

-20

0

20

40

60

^oC

80

100

)

T_A- Ambient Temperature (

DS300361

7/20/01

3 OF 4

www.fairchildsemi.com

PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSD122 QSD123 QSD124

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF

OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD

SEMICONDUCTOR CORPORATION. As used herein:

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical

implant into the body,or (b) support or sustain life,

and (c) whose failure to perform when properly

used in accordance with instructions for use provided

in labeling, can be reasonably expected to result in a

significant injury of the user.

www.fairchildsemi.com

4 OF 4

7/20/01 DS300361

QSD123相关产品

QSD123A4R0 QSD124 QSD124-NL QSD124A4R0 QSD128 QSD2030 QSD2030F QSD2030FA4A0 QSD2030FA4R0 QSD422 QSD423 QSD424 QSD722 QSD723 QSD724 QSD733 QSD733C QSD8250 QSD8250-0-603CSP-0C QSD8260 QSD8650 QSD8650-00C QSD8650A QSD8672 QSD8T120B QSDL-1005#001 QSDL-3201 QSDL-D114 QSDL-D118 QSDL-D118#031 QSDL-E111#002 QSDL-E111-002 QSDL-E114 QSDL-E116 QSDL-E118 QSDL-E118#031 QSDL-E213 QSDL-E215

型号:	QSD123
是否Rohs认证：	不符合
生命周期：	Obsolete
Reach Compliance Code：	unknown
风险等级：	5.15
Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE
最大暗电源：	100 nA
红外线范围：	YES
JESD-609代码：	e0
标称光电流：	4 mA
安装特点：	THROUGH HOLE MOUNT
功能数量：	1
最高工作温度：	100 °C
最低工作温度：	-40 °C
光电设备类型：	PHOTO TRANSISTOR
峰值波长：	880 nm
最大功率耗散：	0.1 W
最长响应时间：	0.000008 s
形状：	ROUND
尺寸：	5 mm
子类别：	Photo Transistors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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