QSE213芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE213

QSE214

PACKAGE DIMENSIONS

0.060 (1.50)

0.174 (4.44)

R 0.030 (0.76)

0.047 (1.20)

0.177 (4.51)

0.224 (5.71)

0.030 (0.76)

0.5 (12.7)

MIN

EMITTER

0.060 (1.52)

SCHEMATIC

0.020 (0.51)

SQ. (2X)

0.100 (2.54)

Collector

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of .010 (.25) on all nonꢀnominal dimensions ꢁnless

otherwise speciﬁed.

Emitter

DESCRIPTION

The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic side-

looker package.

FEATURES

•

NPN Silicon Phototransistor

Package Type: Sidelooker

Medium Reception Angle, 50°

Daylight Filter

Black Epoxy Package

Matching Emitter: QEE213

Page 1 of 4

7/23/02

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE213

QSE214

ABSOLUTE MAXIMUM RATINGS (T = 25°C ꢁnless otherwise speciﬁed)

A

Parameter

Symbol

Rating

ꢀ40 to +100

240 for 5 sec

260 for 10 sec

30

Unit

°C

V

T

Operating Temperatꢁre

Storage Temperatꢁre

OPR

T

STG

(2,3,4)

(2,3)

T

Soldering Temperatꢁre (Iron)

SOLꢀI

T

Soldering Temperatꢁre (Flow)

CollectorꢀEmitter Voltage

EmitterꢀCollector Voltage

SOLꢀF

V

CE

V

5

V

EC

(1)

P

100

mW

Power Dissipation

D

ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C ꢁnless otherwise speciﬁed)

A

Parameter

Test Conditions

Symbol

Min

Typ

Max

Units

λ

Peak Sensitivity

—

30

880

25

—

nM

Deg.

nA

V

PS

Reception Angle

Θ

V

= 10 V, E = 0

I

Collector Emitter Dark Cꢁrrent

Collector Emitter Breakdown

Emitter Collector Breakdown

100

—

CE

e

D

I = 1 mA

BV

—

C

CEO

I = 100 µA

BV

5

—

1.50

—

V

E

ECO

(QSE213)

(QSE214)

0.2

1.00

2

I

OnꢀState Collector Cꢁrrent

mA

E = 0.5 mW/cm , V = 5 V

C(ON)

e

CE

(5)

V

= 5 V

CE

2

V

—

0.4

V

E = 0.5 mW/cm ,

Satꢁration Voltage

CE(SAT)

e

(5)

I = 0.1 mA

C

t

Rise Time

Fall Time

—

8

—

r

V

= 5V, R = 100Ω, I = 1mA

L C

µs

CC

t

f

NOTES:

1. Derate power dissipation linearly 1.33 mW/°C above 25°C.

2. RMA ﬂꢁx is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16" (1.6 mm) minimꢁm from hoꢁsing.

5. λ = 950 nm GaAs.

Page 2 of 4

7/23/02

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE213

QSE214

TYPICAL PERFORMANCE CURVES

Fig.1 Dark Current vs. Collector Emitter Voltage

Fig.2 Radiation Diagram

10¹

90

100

80

10⁰

10^ꢀ1

10^ꢀ2

110

70

120

60

130

50

40

140

150

160

170

30

20

10

0

10^ꢀ3

180

1.0

0.8

0.6

0.4

0.2

0

0.2

0.4

0.6

0.8

1.0

0

10

20

30

40

50

60

V_CEꢀ COLLECTOR EMITTER VOLTAGE (V)

Fig.3 Light Current vs. Ambient Temperature

Fig.4 Light Current vs. Collector to Emitter Voltage

10

Normalized to:

2

= 1 mW/cm

I

V

= 5 V

e

CE

= 0.5 mW/cm

2

I

e

1

0.1

T

= 25˚C

A

2

I

= 0.5 mW/cm

= 0.2 mW/cm

e

1

2

I

= 0.1 mW/cm

e

0.01

Normalized to:

= 5 V

V

CE

= 0.5 mW/cm

2

I

T

e

A

= 25˚C

0.001

0.1

1

10

ꢀ40

ꢀ20

0

20

40

60

80

100

T

_Aꢀ AMBIENT TEMPERATURE (˚C)

V_CEꢀ COLLECTOR ꢀ EMITTER VOLTAGE (V)

Fig.5 Dark Current vs. Ambient Temperature

10³

Normalized to:

V

= 25 V

CE

= 25˚C

V

CE

= 25 V

2

10

T

A

V

= 10 V

CE

1

10

0

10

ꢀ1

10

40

60

80

100

TA ꢀ AMBIENT TEMPERATURE (˚C)

Page 3 of 4

7/23/02

PLASTIC SILICON

INFRARED PHOTOTRANSISTOR

QSE213

QSE214

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As ꢁsed herein:

1. Life sꢁpport devices or systems are devices or systems

which, (a) are intended for sꢁrgical implant into the body, or

(b) sꢁpport or sꢁstain life, and (c) whose failꢁre to perform

when properly ꢁsed in accordance with instrꢁctions for ꢁse

provided in the labeling, can be reasonably expected to

resꢁlt in a significant injꢁry of the ꢁser.

2. A critical component in any component of a life sꢁpport

device or system whose failꢁre to perform can be

reasonably expected to caꢁse the failꢁre of the life sꢁpport

device or system, or to affect its safety or effectiveness.

Page 4 of 4

7/23/02

型号:	QSE213
是否无铅：	不含铅
生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown
风险等级：	5.64
Base Number Matches：	1

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