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产品型号RFD3055LESM9A的概述

芯片RFD3055LESM9A概述 RFD3055LESM9A是一款高性能的MOSFET（场效应晶体管），广泛应用于高频开关电源、DC-DC转换器和其他高效率电源管理电路。该芯片具有低导通电阻、较高的开关速度和较好的热性能，适合用于高功率应用以及对效率有较高要求的场合。 RFD3055LESM9A的基本结构是N沟MOSFET，具有一个强大的输出能力以及较好的抗干扰性能。其设计目标是提供良好的电流承载能力和散热性能，以满足现代电子设备日益增长的功率需求。在模拟和数字电路中，RFD3055LESM9A也可以作为开关控制器、功率放大器或信号调制器来使用，为不同的应用提供灵活的解决方案。芯片RFD3055LESM9A的详细参数根据厂家的规格书，RFD3055LESM9A具备以下主要参数： 1. 最大漏极-源极电压 (V_DS): 55V 2. 最大栅极-源极电压 (V_GS): ±20V ...

产品型号RFD3055LESM9A的Datasheet PDF文件预览

RFD3055LE, RFD3055LESM, RFP3055LE

Data Sheet

November 1999

File Number 4044.3

11A, 60V, 0.107 Ohm, Logic Level,

N-Channel Power MOSFETs

Features

• 11A, 60V

These N-Channel enhancement-mode power MOSFETs are

manufactured using the latest manufacturing process

technology. This process, which uses feature sizes

approaching those of LSI circuits, gives optimum utilization

of silicon, resulting in outstanding performance. They were

designed for use in applications such as switching

regulators, switching converters, motor drivers and relay

drivers. These transistors can be operated directly from

integrated circuits.

• r_DS(ON)= 0.107Ω

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA49158.

Symbol

Ordering Information

PART NUMBER

PACKAGE

BRAND

F3055L

RFD3055LE

TO-251AA

RFD3055LESM

RFP3055LE

TO-252AA

TO-220AB

F3055L

FP3055LE

NOTE: When ordering, use the entire part number. Add the suffix, 9A,

to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-251AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

6-1

RFD3055LE, RFD3055LESM, RFP3055LE

Absolute Maximum Ratings

= 25 C, Unless Otherwise Speciﬁed

RFD3055LE, RFD3055LESM,

RFP3055LE

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

±16

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Refer to Peak Current Curve

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.25

W/ C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T , T

-55 to 175

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

300

260

pkg

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. T = 25 C to 150 C.

Electrical Speciﬁcations

= 25 C, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

= 250µA, V = 0V

MIN

TYP

MAX UNITS

Drain to Source Breakdown Voltage

Gate Threshold Voltage

DSS

= V , I = 250µA

GS(TH)

DS D

Zero Gate Voltage Drain Current

= 55V, V

= 50V, V

= ±16V

= 0V

µA

Ω

DSS

= 0V, T = 150 C

250

±100

0.107

170

Gate to Source Leakage Current

GSS

Drain to Source On Resistance (Note 2)

Turn-On Time

= 8A, V

= 5V (Figure 11)

DS(ON)

D GS

_DD≈ 30V, I = 8A,

= 4.5V, R

= 32Ω

Turn-On Delay Time

Rise Time

d(ON)

(Figures 10, 18, 19)

105

Turn-Off Delay Time

Fall Time

d(OFF)

Turn-Off Time

11.3

6.2

0.43

OFF

Total Gate Charge

= 0V to 10V

= 0V to 5V

= 0V to 1V

= 30V, I = 8A,

= 1.0mA

9.4

5.2

0.36

350

105

C/W

g(TOT)

g(REF)

Gate Charge at 5V

g(5)

(Figures 20, 21)

Threshold Gate Charge

Input Capacitance

g(TH)

= 25V, V

DS GS

= 0V, f = 1MHz

ISS

OSS

RSS

(Figure 14)

Output Capacitance

Reverse Transfer Capacitance

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

3.94

100

θJC

θJA

TO-220AB

TO-251AA, TO-252AA

Source to Drain Diode Speciﬁcations

PARAMETER

Source to Drain Diode Voltage

Diode Reverse Recovery Time

NOTES:

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNITS

= 8A

1.25

= 8A, dI /dt = 100A/µs

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current

Capability Curve (Figure 5).

6-2

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves Unless Otherwise Speciﬁed

1.2

1.0

0.8

0.6

0.4

0.2

= 10V

= 4.5V

125

100

175

100

125

150

175

150

, CASE TEMPERATURE ( C)

T , CASE TEMPERATURE ( C)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

PEAK T = P

x Z

x R + T

θJC

θJC C

0.01

-5

-4

-3

-2

-1

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

100

200

= 25 C

FOR TEMPERATURES

ABOVE 25 C DERATE PEAK

CURRENT AS FOLLOWS:

100

100µs

175 - T

150

I = I

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

1ms

DS(ON)

10ms

= 5V

SINGLE PULSE

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

= MAX RATED T = 25 C

0.1

100

200

-5

-4

-3

-2

-1

t, PULSE WIDTH (s)

, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. PEAK CURRENT CAPABILITY

6-3

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

100

If R = 0

= (L)(I )/(1.3*RATED BV

= 10V

= 5V

- V

)

If R ≠ 0

= (L/R)ln[(I *R)/(1.3*RATED BV

DSS

= 4V

- V ) +1]

AS DSS

STARTING T = 25 C

= 3.5V

STARTING T = 150 C

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

= 3V

= 25 C

0.001

0.01

0.1

, TIME IN AVALANCHE (ms)

, DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322

FIGURE 7. SATURATION CHARACTERISTICS

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

150

120

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80µs

= 11A

= 3A

DUTY CYCLE = 0.5% MAX

= 15V

= 25 C

= 5A

= 25 C

= 175 C

= -55 C

, GATE TO SOURCE VOLTAGE (V)

FIGURE 8. TRANSFER CHARACTERISTICS

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

150

100

2.5

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

= 4.5V, V

= 30V, I = 8A

2.0

1.5

1.0

d(OFF)

= 10V, I = 11A

d(ON)

0.5

-80

-40

120

160

200

, GATE TO SOURCE RESISTANCE (Ω)

T , JUNCTION TEMPERATURE ( C)

FIGURE 10. SWITCHING TIME vs GATE RESISTANCE

FIGURE 11. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

6-4

RFD3055LE, RFD3055LESM, RFP3055LE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

1.2

1.1

1.0

0.9

= 250µA

= V , I = 250µA

1.0

0.8

0.6

-80

-40

120

160

200

-80

-40

120

160

200

T , JUNCTION TEMPERATURE ( C)

FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

1000

= 30V

= C

+ C

ISS

GS GD

+ C

OSS

DS GD

100

WAVEFORMS IN

DESCENDING ORDER:

= 11A

= 5A

= 3A

= 0V, f = 1MHz

= C

RSS

0.1

Q , GATE CHARGE (nC)

, DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

DSS

VARY t TO OBTAIN

REQUIRED PEAK I

DUT

0.01Ω

FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 17. UNCLAMPED ENERGY WAVEFORMS

6-5

RFD3055LE, RFD3055LESM, RFP3055LE

Test Circuits and Waveforms (Continued)

OFF

d(OFF)

d(ON)

90%

10%

DUT

90%

50%

PULSE WIDTH

10%

FIGURE 18. SWITCHING TEST CIRCUIT

FIGURE 19. RESISTIVE SWITCHING WAVEFORMS

g(TOT)

= 20V

= 10V FOR

OR Q

g(10)

g(5)

DEVICES

= 10V

= 5V FOR

DEVICES

DUT

= 2V

= 1V FOR

L DEVICES

g(REF)

g(TH)

g(REF)

FIGURE 20. GATE CHARGE TEST CIRCUIT

FIGURE 21. GATE CHARGE WAVEFORMS

6-6

RFD3055LE, RFD3055LESM, RFP3055LE

PSPICE Electrical Model

.SUBCKT RFD3055LE 2 1 3 ;

rev 1/30/95

CA 12 8 3.9e-9

CB 15 14 4.9e-9

CIN 6 8 3.25e-10

DBODY 7 5 DBODYMOD

DBREAK 5 11 DBREAKMOD

DPLCAP 10 5 DPLCAPMOD

LDRAIN

DPLCAP

DRAIN

RLDRAIN

RSLC1

EBREAK 11 7 17 18 67.8

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 6 10 6 8 1

EVTHRES 6 21 19 8 1

EVTEMP 20 6 18 22 1

DBREAK

RSLC2

ESLC

DBODY

RDRAIN

EBREAK

ESG

IT 8 17 1

EVTHRES

MWEAK

LDRAIN 2 5 1.0e-9

LGATE 1 9 5.42e-9

LSOURCE 3 7 2.57e-9

LGATE

EVTEMP

RGATE

GATE

MMED

MSTRO

RLGATE

MMED 16 6 8 8 MMEDMOD

MSTRO 16 6 8 8 MSTROMOD

MWEAK 16 21 8 8 MWEAKMOD

LSOURCE

CIN

SOURCE

RSOURCE

RBREAK 17 18 RBREAKMOD 1

RDRAIN 50 16 RDRAINMOD 3.7e-2

RGATE 9 20 3.37

RLDRAIN 2 5 10

RLGATE 1 9 54.2

RLSOURCE

S1A

S2A

RBREAK

RLSOURCE 3 7 25.7

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

RSOURCE 8 7 RSOURCEMOD 2.50e-2

RVTHRES 22 8 RVTHRESMOD 1

RVTEMP 18 19 RVTEMPMOD 1

RVTEMP

S1B

S2B

VBAT

EGS

EDS

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

RVTHRES

VBAT 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),3))}

.MODEL DBODYMOD D (IS = 1.75e-13 RS = 1.75e-2 TRS1 = 1e-4 TRS2 = 5e-6 CJO = 5.9e-10 TT = 5.45e-8 N = 1.03 M = 0.6)

.MODEL DBREAKMOD D (RS = 6.50e-1 TRS1 = 1.25e-4 TRS2 = 1.34e-6)

.MODEL DPLCAPMOD D (CJO = 3.21e-10 IS = 1e-30 N = 10 M = 0.81)

.MODEL MMEDMOD NMOS (VTO = 2.02 KP = .83 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.37)

.MODEL MSTROMOD NMOS (VTO = 2.39 KP = 14 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)

.MODEL MWEAKMOD NMOS (VTO = 1.78 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.7 RS = 0.1)

.MODEL RBREAKMOD RES (TC1 = 1.06e-3 TC2 = 0)

.MODEL RDRAINMOD RES (TC1 = 1.23e-2 TC2 = 2.58e-5)

.MODEL RSLCMOD RES (TC1 = 0 TC2 = 0)

.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0)

.MODEL RVTHRESMOD RES (TC1 = -2.19e-3 TC2 = -4.97e-6)

.MODEL RVTEMPMOD RES (TC1 = -1.6e-3 TC2 = 1e-7)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4 VOFF= -2.5)

.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.5 VOFF= -4)

.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0)

.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= -0.5)

.ENDS

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

6-7

RFD3055LE, RFD3055LESM, RFP3055LE

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

Sales Ofﬁce Headquarters

NORTH AMERICA

EUROPE

ASIA

Intersil Corporation

Intersil SA

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

Intersil (Taiwan) Ltd.

7F-6, No. 101 Fu Hsing North Road

Taipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

P. O. Box 883, Mail Stop 53-204

Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

6-8

RFD3055LESM9A相关文章

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RFD3055LESM9A产品参数

型号:	RFD3055LESM9A
生命周期：	Obsolete
IHS 制造商：	HARRIS SEMICONDUCTOR
包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.66
Is Samacsys：	N
其他特性：	AVALANCHE RATED, ESD PROTECTED, LOGIC LEVEL COMPATIBLE
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	12 A
最大漏源导通电阻：	0.15 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL
功耗环境最大值：	48 W
认证状态：	Not Qualified
表面贴装：	YES
端子形式：	GULL WING
端子位置：	SINGLE
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
最大关闭时间（toff）：	85 ns
最大开启时间（吨）：	120 ns
Base Number Matches：	1

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