RFD3055LE, RFD3055LESM, RFP3055LE
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
RFD3055LE, RFD3055LESM,
RFP3055LE
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
60
V
V
V
A
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
60
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
±16
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
11
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Refer to Peak Current Curve
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Refer to UIS Curve
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
38
0.25
W
D
o
o
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T , T
J
-55 to 175
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BV
I
60
1
-
-
-
3
V
DSS
D
GS
= V , I = 250µA
V
V
-
-
V
GS(TH)
GS
DS D
Zero Gate Voltage Drain Current
I
V
V
= 55V, V
= 50V, V
= ±16V
= 0V
1
µA
µA
nA
Ω
DSS
DS
DS
GS
o
= 0V, T = 150 C
-
-
250
±100
0.107
170
-
GS
C
Gate to Source Leakage Current
I
V
-
-
GSS
GS
Drain to Source On Resistance (Note 2)
Turn-On Time
r
I
= 8A, V
= 5V (Figure 11)
-
-
DS(ON)
D GS
t
V
V
DD ≈ 30V, I = 8A,
-
-
ns
ON
D
= 4.5V, R
= 32Ω
GS
GS
Turn-On Delay Time
Rise Time
t
-
8
ns
d(ON)
(Figures 10, 18, 19)
t
-
105
22
39
-
-
ns
r
Turn-Off Delay Time
Fall Time
t
-
-
ns
d(OFF)
t
-
-
ns
f
Turn-Off Time
t
-
92
11.3
6.2
0.43
-
ns
OFF
Total Gate Charge
Q
V
= 0V to 10V
= 0V to 5V
= 0V to 1V
GS
V
= 30V, I = 8A,
= 1.0mA
-
9.4
5.2
0.36
350
105
23
-
nC
nC
nC
pF
pF
pF
C/W
C/W
C/W
g(TOT)
GS
DD
D
I
g(REF)
Gate Charge at 5V
Q
V
-
g(5)
GS
(Figures 20, 21)
Threshold Gate Charge
Input Capacitance
Q
V
-
g(TH)
C
V
= 25V, V
DS GS
= 0V, f = 1MHz
-
ISS
OSS
RSS
(Figure 14)
Output Capacitance
C
C
-
-
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
-
-
o
o
o
R
-
3.94
62
100
θJC
θJA
R
TO-220AB
-
-
TO-251AA, TO-252AA
-
-
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
V
I
I
= 8A
-
-
1.25
66
V
SD
SD
SD
t
= 8A, dI /dt = 100A/µs
SD
ns
rr
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
6-2