RFD8P06现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号RFD8P06的概述

RFD8P06芯片概述与详解一、芯片概述 RFD8P06是一种N沟道增强型场效应晶体管（MOSFET），广泛应用于开关电源、直流电机驱动、电池管理和其他需要高效能开关的电路中。N沟道MOSFET因其较低的导通电阻和较高的开关速度，通常能提供更优的功耗和热管理性能。RFD8P06具有较高的电流承载能力和较好的热稳定性，使其在功率电子领域得到了广泛的应用。二、详细参数 RFD8P06的详细参数如下： - 最大漏极-源极电压（Vds）: 60V - 最大马达电流（Id）: 8A - 导通电阻（Rds(on)）: 0.18Ω（在Vgs=10V时测得） - 栅源阈值电压（Vgs(th)）: 2到4V - 输入电容（Ciss）: 2100pF - 输出电容（Coss）: 1100pF - 反向电容（Crss）: 220pF - 工作温度范围: -55°C至+150°C - 封装类型: TO-...

产品型号RFD8P06的Datasheet PDF文件预览

RFD8P06E, RFD8P06ESM, RFP8P06E

Data Sheet

July 1999

File Number 3937.5

8A, 60V, 0.300 Ohm, P-Channel Power

MOSFETs

Features

• 8A, 60V

These are P-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, relay drivers and emitter switches for bipolar

transistors. These transistors can be operated directly from

integrated circuits.

• r

= 0.300Ω

DS(ON)

• Temperature Compensating PSPICE Model

• 2kV ESD Protected

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate

ESD protection and are designed to withstand 2kV (Human

Body Model) of ESD.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Formerly developmental type TA49044.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP8P06E

TO-220AB

RFD8P06ESM

RFD8P06E

TO-252AA

TO-251AA

D8P06E

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in tape and reel, i.e.

RFD8P06ESM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-251AA

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

4-117

RFD8P06E, RFD8P06ESM, RFP8P06E

Absolute Maximum Ratings T = 25 C

RFD8P06E, RFD8P06ESM, RFP8P06E

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

-60

±20

DSS

Drain to Gate Voltage (R

= 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Refer to Peak Current Curve

Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.32

W/ C

Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . .ESD

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T

-55 to 175

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

300

260

pkg

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. T = 25 C to 150 C.

Electrical Speciﬁcations T = 25 C, Unless Otherwise Speciﬁed

PARAMETER

Drain to Source Breakdown Voltage

Gate Threshold Voltage

SYMBOL

TEST CONDITIONS

= 250µA, V = 0V

MIN

TYP

MAX

UNITS

-60

DSS

GS(TH)

= V , I = 250µA

-2.0

-4.0

-1.0

-25

±10

0.300

Zero Gate Voltage Drain Current

= Rated BV

, V

= 0V

, T = 150 C

µA

Ω

DSS

DSS GS

= 0.8 x Rated BV

DSS

Gate to Source Leakage Current

Drain to Source On Resistance (Note 3)

Turn-On Time

= ±20V

GSS

= 8A, V

= -10V

DS(ON)

= -30V, I_D≈ 8A,

= 3.75Ω, V

= -10V, R = 2.5Ω

GS G

Turn-On Delay Time

d(ON)

(Figure 13)

Rise Time

Turn-Off Delay Time

d(OFF)

Fall Time

Turn-Off Time

100

1.5

OFF

Total Gate Charge

= 0 to -20V

= -48V, I = 8A,

= 6Ω

1.15

600

160

g(TOT)

Gate Charge at 5V

= 0 to -10V

= 0 to -2V

g(-10)

= -1.45mA

g(REF)

Threshold Gate Charge

Input Capacitance

g(TH)

= -25V, V

= 0V,

ISS

OSS

RSS

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

Figure 12

TO-220

3.125

100

C/W

θJC

θJA

C/W

TO-251, TO-252

C/W

Source to Drain Diode Speciﬁcations

PARAMETER

Source to Drain Diode Voltage

Diode Reverse Recovery Time

NOTES:

SYMBOL

TEST CONDITIONS

= -8A

MIN

TYP

MAX

UNITS

-1.5

125

= -8A, dI /dt = -100A/µs

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-118

RFD8P06E, RFD8P06ESM, RFP8P06E

Typical Performance Curves Unless Otherwise Speciﬁed

1.2

1.0

0.8

0.6

0.4

0.2

-10

-8

-6

-4

-2

100

125

150

175

100

125

150

175

, CASE TEMPERATURE ( C)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

0.2

0.1

0.05

0.02

0.01

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

PEAK T = P

x Z

x R

+ T

θJC C

θJC

0.01

-5

-4

-3

-2

-1

t , RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

-100

-10

= 25 C, T = MAX RATED

FOR TEMPERATURES ABOVE 25 C

DERATE PEAK CURRENT

CAPABILITY AS FOLLOWS:

100µs

175 – T

= -20V

= I

---------------------

150

1ms

10ms

= -10V

= 25 C

-1

100ms

OPERATION IN THIS

AREA MAY BE

-10

-5

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

LIMITED BY r

DS(ON)

-0.1

-6

-5

-4

-3

-2

-1

t, PULSE WIDTH (s)

-1

-10

-100

, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. PEAK CURRENT CAPABILITY

4-119

RFD8P06E, RFD8P06ESM, RFP8P06E

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

-30

-20

-15

-10

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

= -10V

STARTING T = 25 C

= 25 C

= -8V

= -20V

-10

= -7V

STARTING T = 150 C

= -6V

= -5V

-5

If R = 0

= (L) (I ) / (1.3RATED BV

= -4.5V

-4.5

- V

)

DSS

If R ≠ 0

= (L/R) ln [(I *R) / (1.3 RATED BV

- V ) + 1]

DSS

-1

-1.5

-3.0

-6.0

-7.5

0.01

0.1

, TIME IN AVALANCHE (ms)

, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

FIGURE 7. SATURATION CHARACTERISTICS

-20

-15

-10

2.5

= -15V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

-55 C

PULSE DURATION = 250µs

= -10V, I = 8A

DUTY CYCLE = 0.5% MAX

2.0

1.5

25 C

175 C

1.0

0.5

-5

-2

-4

-6

-8

-10

-80

-40

120

160

200

T , JUNCTION TEMPERATURE ( C)

, GATE TO SOURCE VOLTAGE (V)

FIGURE 8. TRANSFER CHARACTERISTICS

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2.0

1.5

1.0

0.5

= V , I = 250µA

= 250µA

1.5

1.0

0.5

-80

-40

120

160

200

-80

-40

120

160

200

T , JUNCTION TEMPERATURE ( C)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

TEMPERATURE

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs TEMPERATURE

4-120

RFD8P06E, RFD8P06ESM, RFP8P06E

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

-10.0

-7.5

-5.0

-2.5

0.0

-60

-45

-30

-15

1000

= 0V, f = 1MHz

= C + C

GS GD

ISS

= BV

DSS

= C

≈ C + C

RSS

OSS

800

ISS

= 1.2Ω

600

400

= 1.45mA

G(REF)

0.75 BV

0.50 BV

0.25 BV

0.75 BV

0.50 BV

0.25 BV

DSS

OSS

= -10V

200

RSS

G(REF)

G(ACT)

G(REF)

G(ACT)

-5

-10

-15

-20

-25

t, TIME (µs)

, DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

Test Circuits and Waveforms

VARY t TO OBTAIN

REQUIRED PEAK I

DUT

0.01Ω

-V

DSS

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

OFF

d(OFF)

d(ON)

10%

90%

10%

50%

DUT

50%

90%

-V

PULSE WIDTH

FIGURE 16. SWITCHING TIME TEST CIRCUIT

FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

4-121

RFD8P06E, RFD8P06ESM, RFP8P06E

Test Circuits and Waveforms (Continued)

g(TH)

= -2V

= -10V

-V

g(-10)

= -20V

DUT

g(TOT)

g(REF)

FIGURE 19. GATE CHARGE WAVEFORMS

FIGURE 18. GATE CHARGE TEST CIRCUIT

4-122

RFD8P06E, RFD8P06ESM, RFP8P06E

PSPICE Electrical Model

.SUBCKT RFP8P06E 2 1 3

REV 6/23/94

LDRAIN

CA 12 8 7.24e-10

CB 15 14 8.04e-10

CIN 6 8 6.00e-10

DPLCAP

DRAIN

RSCL1

RSCL2

DBODY 5 7 DBDMOD

DBREAK 7 11 DBKMOD

DESD1 91 9 DESD1MOD

DESD2 91 7 DESD2MOD

DPLCAP 10 6 DPLCAPMOD

ESCL

EBREAK

MOS2

RDRAIN

ESG

EBREAK 5 11 17 18 -79.2

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 5 10 6 8 1

EVTO 20 6 8 18 1

VTO

DBODY

EVTO

GATE

RGATE

MOS1

LGATE

DBREAK

DESD1

DESD2

RIN

CIN

IT 8 17 1

RSOURCE

LSOURCE

LDRAIN 2 5 1e-10

LGATE 1 9 2.92e-9

LSOURCE 3 7 2.92e-9

SOURCE

S1A

S2A

S2B

MOS1 16 6 8 8 MOSMOD M=0.99

MOS2 16 21 8 8 MOSMOD M=0.01

RBREAK

S1B

RBREAK 17 18 RBKMOD 1

RDRAIN 50 16 RDSMOD 95.2e-3

RGATE 9 20 3.95

RIN 6 8 1e9

RSCL1 5 51 RSCLMOD 1e6

RSCL2 5 50 1e3

RVTO

VBAT

EGS

EDS

RSOURCE 8 7 RDSMOD 143.6e-3

RVTO 18 19 RVTOMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1

VTO 21 6 -0.804

ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/22,9))}

.MODEL DBDMOD D (IS=4.15e-15 RS=5.54e-2 TRS1=-1.32e-3 TRS2=-2.48e-6 CJO=6.06e-10 TT=7.50e-8)

.MODEL DBKMOD D (RS=4.66e-1 TRS1=1.58e-3 TRS2=-7.49e-6)

.MODEL DESD1MOD D (BV=20.2 TBV1=-1.25e-3 TBV2=5.79e-7 RS=36 NBV=50 IBV=7e-6)

.MODEL DESD2MOD D (BV=25.4 TBV1=-8.3e-4 TBV2=8.9e-7 NBV=50 IBV=7e-6)

.MODEL DPLCAPMOD D (CJO=2.49e-10 IS=1e-30 N=10)

.MODEL MOSMOD PMOS (VTO=-3.824 KP=5.163 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL RBKMOD RES (TC1=9.48e-4 TC2=-1.42e-7)

.MODEL RDSMOD RES (TC1=5.40e-3 TC2=1.25e-5)

.MODEL RSCLMOD RES (TC1=1.75e-3 TC2=3.90e-6)

.MODEL RVTOMOD RES (TC1=-3.55e-3 TC2=-3.43e-6)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=5.10 VOFF=3.10)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.10 VOFF=5.10)

.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.1 VOFF=-2.9)

.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.9 VOFF=2.1)

.ENDS

NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options;

written by William J. Hepp and C. Frank Wheatley.

4-123

RFD8P06E, RFD8P06ESM, RFP8P06E

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Ofﬁce Headquarters

NORTH AMERICA

EUROPE

ASIA

Intersil Corporation

Intersil SA

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

Intersil (Taiwan) Ltd.

7F-6, No. 101 Fu Hsing North Road

Taipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

P. O. Box 883, Mail Stop 53-204

Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

4-124

RFD8P06相关文章

配单直通车

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QQ：2881677436 复制

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深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

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北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

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深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

QQ：1902134819 复制

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RFD8P06E产品参数

型号:	RFD8P06E
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.76
Is Samacsys：	N
其他特性：	MEGAFET
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	8 A
最大漏极电流 (ID)：	8 A
最大漏源导通电阻：	0.3 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-251AA
JESD-30 代码：	R-PSIP-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	IN-LINE
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	48 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号RFD8P06的概述

产品型号RFD8P06的Datasheet PDF文件预览

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