RGF1G-E3各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

RGF1A thru RGF1M

Vishay General Semiconductor

Surface Mount Glass Passivated Junction Fast

Switching Rectifier

®

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

V_F

1.0 A

50 V to 1000 V

30 A

1.3 V

*

t_rr

150 ns, 250 ns, 500 ns

175 °C

d

e

t

n

e

T_jmax.

t

a

P

* Glass-plastic encapsulation

technique is covered by patent

No. 3,996,602, brazed-lead

DO-214BA (GF1)

assembly by Patent No. 3,930,306

and lead forming by Patent No. 5,151,846

Features

Mechanical Data

• Superectifier structure for high reliability

condition

Case: DO-214BA, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

• Patented glass-plastic encapsulation technique

• Ideal for automated placement

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Fast switching for high efficiency

• Low leakage current

Polarity: Two bands indicate cathode end - 1st band

denotes device type and 2nd band denotes repetitive

peak reverse voltage rating

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Typical Applications

For use in fast switching rectification of power supply,

inverters, converters, and freewheeling diodes for

consumer, automotive and Telecommunication

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Device marking code

Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit

RA

50

RB

RD

RG

RJ

RK

RM

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

400

600

800

1000

V

A

35

50

70

140

200

280

400

1.0

420

600

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

at T_L= 120 °C

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

30

50

A

Max. full load reverse current, full cycle average

I_R(AV)

µA

T

_A= 55 °C

Operating junction and storage temperature range T_J,T_STG

- 65 to + 175

°C

Document Number 88697

10-Aug-05

www.vishay.com

1

RGF1A thru RGF1M

Vishay General Semiconductor

Electrical Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Maximum

Test condition

at 1.0 A

Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit

V_F

1.3

V

instantaneous forward

voltage

Maximum DC reverse

current at rated DC

blocking voltage

T

_A= 25 °C

I_R

5.0

100

µA

T_A= 125 °C

Typical reverse

recovery time

at I_F= 0.5 A, I_R= 1.0 A,

I_rr= 0.25 A

t_rr

150

250

500

ns

Typical junction

capacitance

at 4.0 V, 1 MHz

C_J

8.5

pF

Thermal Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit

Typical thermal resistance⁽¹⁾

R_θJA

R_θJL

80

28

°C/W

Note:

(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise specified)

30

P. C. B. M o unted on

0.2 x 0.2” (5.0 x 5.0mm)

Copper Pad Areas

TJ = TJ max.

8.3 ms Single Half Sine-Wave

25

20

15

10

5

1

0.5

60 Hz

Resistive or

Inductive Load

0

100

0

110

120

130

140

150

160

175

1

10

100

Lead Temperature (°C)

Number of Cycles at 60 Hz

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

2

Document Number 88697

10-Aug-05

RGF1A thru RGF1M

Vishay General Semiconductor

10

1

100

10

1

TJ = 25 °C

f = 1.0 MHz

Vsig = 50mVp-p

TJ = 25 °C

Pulse Width = 300 µs

1% Duty Cycle

0.1

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1

10

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

10

100

10

Mounted on

0.2 x 02.” (5.0 x 7mm)

Copper Pad Areas

TJ = 125 °C

1

TJ = 100 °C

0.1

1

TJ = 25 °C

0.01

0.1

0.01

0

20

40

60

80

100

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

t, Pulse Duration (sec.)

Figure 4. Typical Reverse Characteristics

Figure 6. Typical Transient Thermal Impedance

Package outline dimensions in inches (millimeters)

DO-214BA (GF1)

Cathode Band

Mounting Pad Layout

0.076 MAX.

(1.93 MAX.)

0.066 (1.68)

0.066 MIN.

(1.68 MIN.)

0.040 (1.02)

0.187 (4.75)

0.167 (4.24)

0.015 (0.38)

0.060 MIN.

(1.52 MIN.)

0.0065 (0.17)

0.108 (2.74)

0.098 (2.49)

0.118 (3.00)

0.100 (2.54)

0.220

(5.58) REF

0.114 (2.90)

0.094 (2.39)

0.006 (0.152) TYP.

0.060 (1.52)

0.030 (0.76)

0.226 (5.74)

0.196 (4.98)

Document Number 88697

10-Aug-05

www.vishay.com

3

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

1

型号:	RGF1G-E3
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	VISHAY SEMICONDUCTORS
零件包装代码：	DO-214BA
包装说明：	R-PDSO-C2
针数：	2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.18
其他特性：	FREE WHEELING DIODE
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.3 V
JEDEC-95代码：	DO-214BA
JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3
湿度敏感等级：	1
最大非重复峰值正向电流：	30 A
元件数量：	1
端子数量：	2
最高工作温度：	175 °C
最低工作温度：	-65 °C
最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
最大重复峰值反向电压：	400 V
最大反向恢复时间：	0.15 µs
子类别：	Rectifier Diodes
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	C BEND
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

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