SFH4056现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

High Power Infrared Emitter (850 nm)

Lead (Pb) Free Product - RoHS Compliant

SFH 4056

Features

Wesentliche Merkmale

• Very small package:

• Sehr kleines Gehäuse:

(LxWxH) 3.2 mm x 1.6 mm x 1 mm

• High optical total power

(LxBxH) 3.2 mm x 1.6mm x 1 mm

• Sehr hohe Gesamtleistung

Applications

Anwendungen

• Miniature photointerrupters

• Mobile devices

• Miniaturlichtschranken

• Mobile Geräte

• proximity sensor

• Näherungssensor

• For drive and control circuits

• „Messen/Steuern/Regeln“

Safety Advices

Sicherheitshinweise

Depending on the mode of operation, these

devices emit highly concentrated non visible

infrared light which can be hazardous to the

human eye. Products which incorporate these

devices have to follow the safety precautions

given in IEC 60825-1 and IEC 62471.

Je nach Betriebsart emittieren diese Bauteile

hochkonzentrierte, nicht sichtbare Infrarot-

Strahlung, die gefährlich für das menschliche

Auge sein kann. Produkte, die diese Bauteile

enthalten, müssen gemäß den Sicherheits-

richtlinien der IEC-Normen 60825-1 und 62471

behandelt werden.

Typ

Type

Bestellnummer

Ordering Code

Strahlstärkegruppierung¹⁾(I_F= 70 mA, t_p= 20 ms)

Radiant Intensity Grouping¹⁾

I_e(mW/sr)

SFH 4056

Q65110A9942

≥ 16 (typ. 35)

¹⁾gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr

2010-11-09

1

SFH 4056

Grenzwerte (T_A= 25 °C)

Maximum Ratings

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

Betriebs- und Lagertemperatur

T_op, T_stg

– 40 … + 85

°C

Operating and storage temperature range

Sperrspannung

Reverse voltage

V_R

5

V

Vorwärtsgleichstrom

Forward current

I_F

70

mA

mW

K/W

Stoßstrom, t_p= 10 μs, D = 0

Surge current

I_FSM

P_tot

700

140

540

Verlustleistung

Power dissipation

Wärmewiderstand Sperrschicht - Umgebung bei R_thJA

Montage auf FR4 Platine, Padgröße je 5 mm²

Thermal resistance junction - ambient mounted

on PC-board (FR4), padsize 5 mm²each

Wärmewiderstand Sperrschicht - Lötstelle bei

Montage auf Metall-Block

Thermal resistance junction - soldering point,

mounted on metal block

R_thJS

360

2

K/W

kV

Elektrostatische Entladung (HBM)

Electrostatic discharge (HBM)

ESD

Kennwerte (T_A= 25 °C)

Characteristics

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

Wellenlänge der Strahlung

Wavelength at peak emission

I_F= 70 mA, t_p= 10 ms

λ_peak

λ_centroid

Δλ

860

850

42

nm

Schwerpunkts-Wellenlänge der Strahlung

Centroid Wavelength

I_F= 70 mA, t_p= 10 ms

Spektrale Bandbreite bei 50% von I_max

Spectral bandwidth at 50% of I_max

I_F= 70 mA, t_p= 10 ms

Abstrahlwinkel

Half angle

ϕ

± 22

Grad

deg.

2010-11-09

2

SFH 4056

Kennwerte (T_A= 25 °C)

Characteristics (cont’d)

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

Aktive Chipfläche

Active chip area

0.04

mm²

A

Abmessungen der aktiven Chipfläche

Dimension of the active chip area

L × B

L × W

0.2 × 0.2

12

mm²

ns

Schaltzeiten, I_evon 10% auf 90% und von 90% t_r, t_f

auf 10%, bei I_F= 70 mA, R_L= 50 Ω

Switching times, Ι_efrom 10% to 90% and from

90% to 10%, I_F= 70 mA, R_L= 50 Ω

Durchlassspannung

Forward voltage

V_F

1.6 (< 2.0)

I_F= 70 mA, t_p= 20 ms

V

Sperrstrom

Reverse current

I_R

not designed for μA

reverse

operation

Gesamtstrahlungsfluss

Total radiant flux

I_F= 70 mA, t_p= 20 ms

Φ_{e typ}

TC_I

40

mW

Temperaturkoeffizient von I_ebzw. Φ_e,

I_F= 70 mA

– 0.5

%/K

Temperature coefficient of I_eor Φ_e,

I_F= 70 mA

Temperaturkoeffizient von V_F, I_F= 70 mA

Temperature coefficient of V_F, I_F= 70 mA

TC_V

TC_λ

– 0.7

+ 0.3

mV/K

nm/K

Temperaturkoeffizient von λ, I_F= 70 mA

Temperature coefficient of λ, I_F= 70 mA

2010-11-09

3

SFH 4056

Strahlstärke I_ein Achsrichtung¹⁾

gemessen bei einem Raumwinkel Ω = 0.01 sr

Radiant Intensity I_ein Axial Direction

at a solid angle of Ω = 0.01 sr

Bezeichnung

Parameter

Symbol

Werte

Values

Einheit

Unit

SFH 4056

-S

-T

-U

Strahlstärke

Radiant intensity

I_F= 70 mA, t_p= 20 ms

I_{e min}

I_{e max}

16

32

25

50

40

80

mW/sr

Strahlstärke

I_{e typ}

90

140

225

mW/sr

Radiant intensity

I_F= 500 mA, t_p= 25 µs

¹⁾Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) /

Only one bin in one packing unit (variation lower 2:1)

Abstrahlcharakteristik

Radiation Characteristics I_rel= f (ϕ)

40˚

30˚

20˚

10˚

0˚

OHF04383

1.0

50˚

0.8

0.6

0.4

60˚

70˚

0.2

0

80˚

90˚

100˚

1.0

0.8

0.6

0.4

0˚

20˚

40˚

60˚

80˚

100˚

120˚

2010-11-09

4

SFH 4056

I_e

= f (I_F)

Relative Spectral Emission

I_rel= f (λ)

Radiant Intensity

Max. Permissible Forward Current

I_F= f (T_A), R_thJA= 540 K/W

I_e70 mA

Single pulse, t_p= 25 μs

OHF04135

OHF04406

OHF04264

100

%

10¹

80

mA

I_e

I_F

I_rel

70

60

50

40

30

20

10

0

I

_e(70 mA)

80

60

40

20

0

10⁰

5

10^-1

5

10^-2

5

10^-3

10⁰

5

10¹

5

10²

10³

0

20

40

60

80 ˚C 100

mA

700

750

800

850

nm 950

I_F

T_A

λ

Forward Current I_F= f (V_F)

Single pulse, t_p= 100 μs

Permissible Pulse Handling

Capability I_F= f (τ), T_A= 25 °C,

duty cycle D = parameter

Permissible Pulse Handling

Capability I_F= f (τ), T_A= 85 °C,

duty cycle D = parameter

OHF04266

OHF04265

OHF03826

10⁰

0.8

A

0.8

A

t_P

A

t_P

I_F

D

⁼T

D

⁼T

0.7

T

10^-1

5

0.6

0.5

0.4

0.3

0.2

0.1

0

0.6

0.5

0.4

0.3

0.2

0.1

0

D

=

0.005

0.01

0.02

0.03

0.05

0.1

D

=

0.005

0.01

0.02

0.03

0.05

0.1

10^-2

5

0.2

0.5

1

10^-3

5

0.2

0.5

1

10^-4

10^-510^-410^-310^-210^-110⁰10¹s 10²

0

0.5

1

1.5

2

2.5 V 3

10^-510^-410^-310^-210^-110⁰10¹s 10²

V_F

t_p

2010-11-09

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SFH 4056

Maßzeichnung

Package Outlines

Maße in mm/ Dimensions in mm.

Gehäuse / Package

Farbe / Colour

Chip LED/ Chip LED

Schwarz / black

Gehäusemarkierung/

Package marking

Pad 1: Kathode / cathode

Pad 2: Anode / anode (anode marking)

Gewicht/

5.3mg

Approx. weight

2010-11-09

6

SFH 4056

Gurtung / Polarität und Lage

Verpackungseinheit 2000/Rolle, ø180 mm

Method of Taping / Polarity and Orientation

Packing unit 2000/reel, ø180 mm

Maße in mm (inch) / Dimensions in mm (inch).

Empfohlenes Lötpaddesign

Recommended Solder Pad

Reflow Löten

Reflow Soldering

Maße in mm / Dimensions in mm.

2010-11-09

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SFH 4056

Lötbedingungen

Vorbehandlung nach JEDEC Level 3

Soldering Conditions

Reflow Lötprofil für bleifreies Löten

Reflow Soldering Profile for lead free soldering

Preconditioning acc. to JEDEC Level 3

(nach J-STD-020-D.01)

(acc. to J-STD-020-D.01)

OHA04525

300

˚C

T

250

T

245 ˚C

p

240 ˚C

t_P

t_L

217 ˚C

200

150

t_S

100

50

25 ˚C

0

50

100

150

200

250

s

300

t

Pb-Free (SnAgCu) Assembly

Max. Ratings

Recommendation

Profile Feature

Ramp-up Rate to Preheat*⁾

25°C to 150°C

2°C / sec

3°C / sec

Time t_sfrom T_Sminto T_Smax

(150°C to 200°C

100s

min. 60sec max. 120sec

3°C / sec

Ramp-up Rate to Peak*⁾

T_Smaxto T_P

2°C / sec

Liquidus Temperture T_L

Time t_Labove T_L

217°C

80sec

245°C

20sec

max. 100sec

Peak Temperature T_P

max. 260°C

Time t_Pwithin 5°C of the specified peak

temperature T_P- 5K

min. 10sec max. 30sec

Ramp-down Rate*

T_Pto 100°C

3°C / sec

6°C / sec maximum

max. 8 min.

Time 25°C to Peak temperature

All temperatures refer to the center of the package, measured on the top of the component

* slope calculation ΔT/Δt: Δt max. 5 sec; fulfillment for the whole T-range

2010-11-09

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SFH 4056

Published by

OSRAM Opto Semiconductors GmbH

Leibnizstrasse 4, D-93055 Regensburg

www.osram-os.com

The information describes the type of component and shall not be considered as assured characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components ¹, may only be used in life-support devices or systems ²with the express written approval of OSRAM OS.

¹A critical component is a component usedin a life-support device or system whose failure can reasonably be expected

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

²Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

2010-11-09

9

型号:	SFH4056
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	OSRAM OPTO SEMICONDUCTORS GMBH
Reach Compliance Code：	compliant
HTS代码：	8541.40.20.00
风险等级：	0.83
最大正向电流：	0.07 A
最大正向电压：	1.6 V
安装特点：	SURFACE MOUNT
最高工作温度：	85 °C
最低工作温度：	-40 °C
光电设备类型：	INFRARED LED
峰值波长：	860 nm
最长响应时间：	1.2e-8 s
最大反向电压：	5 V
光谱带宽：	4.2e-8 m
子类别：	Infrared LEDs
表面贴装：	YES
视角：	44 deg

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