STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STD4NK50Z
STD4NK50Z-1
STP4NK50Z
STP4NK50ZFP
V
Drain-source Voltage (V = 0)
500
500
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
± 30
3 (*)
1.9 (*)
12 (*)
20
V
GS
I
Drain Current (continuous) at T = 25°C
3
1.9
12
3 (*)
1.9 (*)
12 (*)
45
A
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
45
W
C
Derating Factor
0.36
0.16
2800
4.5
0.36
W/°C
V
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
ESD(G-S)
dv/dt (1)
V/ns
V
V
ISO
-
2500
-
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤3 A, di/dt ≤200A/µs, V ≤ V , T ≤ T
JMAX.
SD
DD
(BR)DSS
j
(*) Limited only by maximum temperature allowed
THERMAL DATA
DPAK
TO-220
2.78
TO-220FP
6.25
IPAK
2.78
100
Rthj-case
Rthj-amb
Thermal Resistance Junction-case (Max)
Thermal Resistance Junction-ambient (Max)
°C/W
°C/W
°C
62.5
T
l
300
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
3
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
120
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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