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产品型号STD4NK50的Datasheet PDF文件预览

STP4NK50Z - STP4NK50ZFP  
STD4NK50Z - STD4NK50Z-1  
N-CHANNEL 500V - 2.4- 3A TO-220/TO-220FP/DPAK/IPAK  
Zener-Protected SuperMESH™Power MOSFET  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP4NK50Z  
500 V  
500 V  
500 V  
500 V  
< 2.7 Ω  
< 2.7 Ω  
< 2.7 Ω  
< 2.7 Ω  
3 A  
3 A  
3 A  
3 A  
45 W  
20 W  
45 W  
45 W  
STP4NK50ZFP  
STD4NK50Z  
STD4NK50Z-1  
3
TYPICAL R (on) = 2.3 Ω  
DS  
2
1
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
TO-220  
TO-220FP  
3
3
2
1
1
IPAK  
DPAK  
DESCRIPTION  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established strip-  
based PowerMESH™ layout. In addition to pushing  
on-resistance significantly down, special care is tak-  
en to ensure a very good dv/dt capability for the  
most demanding applications. Such series comple-  
ments ST full range of high voltage MOSFETs in-  
cluding revolutionary MDmesh™ products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES,  
ADAPTORS AND PFC  
LIGHTING  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P4NK50Z  
PACKAGE  
PACKAGING  
TUBE  
STP4NK50Z  
STP4NK50ZFP  
STD4NK50ZT4  
STD4NK50Z-1  
TO-220  
TO-220FP  
DPAK  
P4NK50ZFP  
D4NK50Z  
D4NK50Z  
TUBE  
TAPE & REEL  
TUBE  
IPAK  
December 2002  
1/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STD4NK50Z  
STD4NK50Z-1  
STP4NK50Z  
STP4NK50ZFP  
V
Drain-source Voltage (V = 0)  
500  
500  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
Gate- source Voltage  
± 30  
3 (*)  
1.9 (*)  
12 (*)  
20  
V
GS  
I
Drain Current (continuous) at T = 25°C  
3
1.9  
12  
3 (*)  
1.9 (*)  
12 (*)  
45  
A
D
C
I
Drain Current (continuous) at T = 100°C  
A
D
C
I
( )  
Drain Current (pulsed)  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
45  
W
C
Derating Factor  
0.36  
0.16  
2800  
4.5  
0.36  
W/°C  
V
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (DC)  
ESD(G-S)  
dv/dt (1)  
V/ns  
V
V
ISO  
-
2500  
-
T
T
stg  
Operating Junction Temperature  
Storage Temperature  
j
-55 to 150  
°C  
( ) Pulse width limited by safe operating area  
(1) I 3 A, di/dt 200A/µs, V V , T T  
JMAX.  
SD  
DD  
(BR)DSS  
j
(*) Limited only by maximum temperature allowed  
THERMAL DATA  
DPAK  
TO-220  
2.78  
TO-220FP  
6.25  
IPAK  
2.78  
100  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case (Max)  
Thermal Resistance Junction-ambient (Max)  
°C/W  
°C/W  
°C  
62.5  
T
l
300  
Maximum Lead Temperature For Soldering Purpose  
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
I
AR  
Avalanche Current, Repetitive or Not-Repetitive  
3
A
(pulse width limited by T max)  
j
E
Single Pulse Avalanche Energy  
120  
mJ  
AS  
(starting T = 25 °C, I = I , V = 50 V)  
j
D
AR  
DD  
GATE-SOURCE ZENER DIODE  
Symbol  
BV  
Parameter  
Test Conditions  
Igs=± 1mA (Open Drain)  
Min.  
30  
Typ.  
Max.  
Unit  
Gate-Source Breakdown  
Voltage  
V
GSO  
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES  
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s  
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be  
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and  
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the  
usage of external components.  
2/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
ELECTRICAL CHARACTERISTICS (T  
=25°C UNLESS OTHERWISE SPECIFIED)  
CASE  
ON/OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
= 1 mA, V = 0  
500  
V
(BR)DSS  
D
GS  
Breakdown Voltage  
I
Zero Gate Voltage  
V
V
= Max Rating  
= Max Rating, T = 125 °C  
1
50  
µA  
µA  
DSS  
DS  
DS  
Drain Current (V = 0)  
GS  
C
I
Gate-body Leakage  
V
= ± 20V  
±10  
µA  
GSS  
GS  
Current (V = 0)  
DS  
V
V
V
= V , I = 50µA  
Gate Threshold Voltage  
3
3.75  
2.3  
4.5  
2.7  
V
GS(th)  
DS  
GS  
GS  
D
R
Static Drain-source On  
Resistance  
= 10V, I = 1.5 A  
DS(on)  
D
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
g
(1)  
Forward Transconductance  
V
V
= 15 V I = 1.5 A  
1.5  
S
fs  
DS  
, D  
C
C
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
V
= 25V, f = 1 MHz, V = 0  
310  
49  
10  
pF  
pF  
pF  
iss  
DS  
GS  
oss  
rss  
C
(3) Equivalent Output  
Capacitance  
= 0V, V = 0V to 400V  
33  
pF  
oss eq.  
GS  
DS  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
Turn-on Delay Time  
Rise Time  
V
R
= 250 V, I = 1.5 A  
= 4.7V = 10 V  
GS  
10  
7
ns  
ns  
d(on)  
DD  
D
t
r
G
(Resistive Load see, Figure 3)  
Q
Q
Q
V
V
= 400 V, I = 3 A,  
= 10 V  
nC  
nC  
nC  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
12  
3
7
g
DD  
GS  
D
gs  
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
Turn-off Delay Time  
Fall Time  
V
= 250 V, I = 1.5 A  
21  
11  
ns  
ns  
d(off)  
DD  
D
t
f
R = 4.7V = 10 V  
G GS  
(Resistive Load see, Figure 3)  
t
V
R
= 400V, I = 3 A,  
10  
10  
17  
ns  
ns  
ns  
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
r(Voff)  
DD  
D
t
f
= 4.7Ω, V = 10V  
G
GS  
t
c
(Inductive Load see, Figure 5)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
3
12  
A
A
Source-drain Current  
Source-drain Current (pulsed)  
SD  
(2)  
I
SDM  
V
(1)  
I
I
= 3 A, V = 0  
Forward On Voltage  
1.6  
V
SD  
SD  
SD  
GS  
t
= 3 A, di/dt = 100A/µs  
= 40 V, T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
260  
935  
7.2  
ns  
nC  
A
rr  
Q
V
DD  
rr  
RRM  
j
I
(see test circuit, Figure 5)  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by safe operating area.  
3. C  
V
is defined as a constant equivalent capacitance giving the same charging time as C  
when V increases from 0 to 80%  
oss DS  
oss eq.  
.
DSS  
3/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
Safe Operating For TO-220  
Thermal Impedance For TO-220  
Safe Operating Area For TO-220FP  
Thermal Impedance For TO-220FP  
Safe Operating Area For DPAK/IPAK  
Thermal Impedance For DPAK/IPAK  
4/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
Transfer Characteristics  
Output Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
5/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
Normalized Gate Threshold Voltage vs Temp.  
Source-drain Diode Forward Characteristics  
Maximum Avalanche Energy vs Temperature  
Normalized On Resistance vs Temperature  
Normalized BVDSS vs Temperature  
6/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuit For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
7/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
TO-220 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.40  
1.23  
2.40  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
MAX.  
0.181  
0.051  
0.107  
A
C
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
8/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
TO-220FP MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.4  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.5  
1.5  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1 2 3  
L4  
L5  
L2  
9/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
TO-252 (DPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
TYP.  
MAX.  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
MIN.  
0.087  
0.035  
0.001  
0.025  
0.204  
0.018  
0.019  
0.236  
0.252  
0.173  
0.368  
MAX.  
0.094  
0.043  
0.009  
0.035  
0.213  
0.024  
0.024  
0.244  
0.260  
0.181  
0.398  
A
A1  
A2  
B
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
0.8  
0.031  
0.60  
0o  
1.00  
8o  
0.024  
0o  
0.039  
0o  
P032P_B  
10/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
TO-251 (IPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.2  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.027  
0.025  
0.204  
MAX.  
0.094  
0.043  
0.051  
0.031  
0.212  
0.033  
A
A1  
A3  
B
0.9  
1.1  
0.7  
1.3  
0.64  
5.2  
0.9  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.012  
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
16.3  
9.4  
1.2  
1
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.039  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
6.4  
4.4  
15.9  
9
G
H
L
L1  
L2  
0.8  
0.8  
0.031  
H
L
D
L2  
L1  
0068771-E  
11/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
DPAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
All dimensions  
are in millimeters  
All dimensions are in millimeters  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
16.4  
50  
0.059  
13.2 0.504 0.520  
0.795  
18.4 0.645 0.724  
1.968  
22.4  
0.881  
BASE QTY  
BULK QTY  
2500  
TAPE MECHANICAL DATA  
2500  
mm  
MIN. MAX. MIN. MAX.  
6.8 0.267 0.275  
10.4 10.6 0.409 0.417  
12.1 0.476  
inch  
DIM.  
A0  
B0  
B1  
D
7
1.5  
1.5  
1.6 0.059 0.063  
0.059  
D1  
E
1.65 1.85 0.065 0.073  
7.4 7.6 0.291 0.299  
2.55 2.75 0.100 0.108  
F
K0  
P0  
P1  
P2  
R
3.9  
7.9  
1.9  
40  
4.1 0.153 0.161  
8.1 0.311 0.319  
2.1 0.075 0.082  
1.574  
W
15.7  
16.3 0.618 0.641  
* on sales type  
12/13  
STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
© http://www.st.com  
13/13  
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