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产品型号STPS30150CT的概述

芯片STPS30150CT的概述 STPS30150CT是一款由意法半导体（STMicroelectronics）生产的快速恢复整流二极管。该芯片在电力电子设备以及各种功率管理领域中得到了广泛应用。其设计目标是提供高效率、高温度及电流过载能力，使其在要求严格的工作条件下依然能保持卓越的性能。STPS30150CT还具备极低的正向压降，显著提升了功率转换的效率，是现代电源系统中不可或缺的关键组件之一。芯片STPS30150CT的详细参数 STPS30150CT的主要参数包括： - 最大反向电压（V_R): 150V - 最大正向电流（I_F): 30A - 正向压降（V_F): 在I_F=15A时最大为0.55V - 反向漏电流（I_R): 在Tj=25°C时最大为5mA，Tj=100°C时最大为500mA - 工作温度范围（T_j): -40°C 至 +150°C - 封装类型: ...

产品型号STPS30150CT的Datasheet PDF文件预览

STPS30150CT/CW/CFP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 15 A

150 V

175°C

0.75 V

V_F(max)

TO-220FPAB

STPS30150CFP

FEATURES AND BENEFITS

■

HIGH JUNCTION TEMPERATURE CAPABILITY

■

GOOD TRADE OFF BETWEEN LEAKAGE

CURRENT AND FORWARD VOLTAGE DROP

■

LOW LEAKAGE CURRENT

INSULATED PACKAGE: TO-220FPAB

Insulating voltage: 2000V DC

Capacitance: 45pF

■

AVALANCHE CAPABILITY SPECIFIED

TO-247

STPS30150CW

TO-220AB

STPS30150CT

DESCRIPTION

Dual center tap schottky rectifier designed for

high frequency Switched Mode Power

Supplies.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

150

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

Average forward current TO-220FPAB Tc = 110°C per diode

δ = 0.5

per device

TO-220AB

TO-247

Tc = 155°C

220

I_FSM

P_ARMRepetitive peak avalanche power

Surge non repetitive forward current

tp = 10 ms sinusoidal

tp = 1µs Tj = 25°C

10500

- 65 to + 175

175

°C

T_stg

Storage temperature range

Maximum operating junction temperature *

°C

dV/dt Critical rate of rise of reverse voltage

10000

V/µs

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j − a)

July 2003 - Ed: 6C

1/6

STPS30150CT/CW/CFP

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

R_{th (j-c)}Junction to case

TO-220FPAB

Per diode

Total

3.3

°C/W

TO-220AB

TO-247

Per diode

Total

1.6

0.85

Per diode

Total

1.5

0.8

R_{th (c)}

TO-220FPAB

TO-220AB

TO-247

Coupling

2.6

0.1

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests conditions

Min. Typ. Max.

Unit

µA

I_R*

Reverse leakage current

Tj = 25°C

V_R= V_RRM

6.5

Tj = 125°C

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

V_F**

Forward voltage drop

I_F= 15 A

I_F= 30 A

0.92

0.69

0.8

0.75

0.86

Pulse test : * tp = 5 ms, δ < 2%

** tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.64 x I_F(AV)+ 0.0073 I_{F (RMS)}

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

Fig. 2: Average forward current versus ambient

temperature (δ = 0.5, per diode).

PF(av)(W)

IF(av)(A)

δ = 0.2

δ = 0.1

δ = 0.5

TO-220AB/TO-247/I²PAK/D²PAK

Rth(j-a)=Rth(j-c)

δ = 0.05

δ = 1

TO-220FPAB

Rth(j-a)=15°C/W

Tamb(°C)

IF(av) (A)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

=tp/T

100

125

150

2/6

STPS30150CT/CW/CFP

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

(t )

(1µs)

ARM

(t )

(25°C)

ARM

1.2

0.1

0.8

0.6

0.4

0.2

0.01

T (°C)

t (µs)

0.001

100

125

150

0.01

0.1

100

1000

Fig. 5-2: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TO-220FPAB only).

Fig. 5-1: Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode).

IM(A)

140

250

120

100

200

150

Tc=25°C

Tc=50°C

Tc=75°C

100

Tc=75°C

Tc=125°C

t(s)

δ=0.5

1E-3

1E-2

1E-1

1E+0

1E-3

1E-2

1E-1

1E+0

Fig. 6-2: Relative variation of thermal impedance

junction to case versus pulse duration.

(TO-220FPAB)

Fig. 6-1: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ = 0.2

0.4

δ = 0.2

δ = 0.1

0.2

Single pulse

tp(s)

Single pulse

tp(s)

=tp/T

0.0

1E-3

0.0

1E-3

1E-2

1E-1

1E+0

1E+1

1E-2

1E-1

1E+0

3/6

STPS30150CT/CW/CFP

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

Fig. 8: Junction capacitance versus reverse voltage

applied (typical values, per diode).

IR(µA)

C(pF)

1E+5

1000

F=1MHz

Tj=25°C

Tj=175°C

1E+4

Tj=150°C

Tj=125°C

1E+3

1E+2

Tj=100°C

1E+1

100

Tj=25°C

1E+0

VR(V)

1E-1

100

125

150

100 200

Fig. 9: Forward voltage drop versus forward

current (maximum values, per diode).

IFM(A)

100.0

Tj=125°C

Typical values

10.0

Tj=125°C

Tj=25°C

1.0

VFM(V)

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

4/6

STPS30150CT/CW/CFP

DIMENSIONS

PACKAGE MECHANICAL DATA

TO-220AB

REF.

Millimeters

Inches

Min.

4.40

1.23

2.40

0.49

0.61

1.14

4.95

2.40

Max.

4.60

1.32

2.72

0.70

0.88

1.70

5.15

2.70

10.40

Max.

0.181

0.051

0.107

0.027

0.034

0.066

0.202

0.106

0.409

0.173

0.048

0.094

0.019

0.024

0.044

0.194

0.094

0.393

Dia

16.4 typ.

0.645 typ.

0.511

0.104

0.600

0.244

0.137

0.551

0.116

0.620

0.259

0.154

2.65

15.25

6.20

3.50

2.95

15.75

6.60

3.93

2.6 typ.

0.102 typ.

Diam.

3.75

3.85

0.147

0.151

PACKAGE MECHANICAL DATA

TO-220FPAB

DIMENSIONS

Millimeters Inches

REF.

Min.

4.4

Max.

4.6

Min.

Max.

0.181

0.106

0.108

0.027

0.039

0.067

0.205

0.106

0.409

0.173

0.098

0.018

0.030

0.045

0.195

0.094

0.393

2.5

2.7

2.5

2.75

0.70

1.70

5.20

2.7

Dia

0.45

0.75

1.15

4.95

2.4

10.4

Dia.

16 Typ.

0.63 Typ.

28.6

9.8

2.9

30.6

10.6

3.6

1.126

0.386

0.114

0.626

0.354

0.118

1.205

0.417

0.142

0.646

0.366

0.126

15.9

9.00

3.00

16.4

9.30

3.20

5/6

STPS30150CT/CW/CFP

PACKAGE MECHANICAL DATA

TO-247

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

REF.

4.85

2.20

0.40

1.00

5.15 0.191

2.60 0.086

0.80 0.015

1.40 0.039

0.203

0.102

0.031

0.055

Dia.

3.00

2.00

0.118

0.078

F3 2.00

F4 3.00

2.40 0.078

3.40 0.118

0.094

0.133

10.90

0.429

15.45

19.85

15.75 0.608

20.15 0.781

4.30 0.145

0.620

0.793

0.169

L2 L4

L1 3.70

L3 14.20

18.50

0.728

14.80 0.559

3.00 0.078

3.65 0.139

0.582

0.118

0.143

34.60

5.50

1.362

0.216

2.00

F(x3)

5°

60°

5°

60°

Dia. 3.55

■

Cooling method : C

Recommended torque value : 0.8m.N

Maximum torque value : 1.0m.N

Ordering Type

STPS30150CT

STPS30150CFP

STPS30150CW

Marking

Package

Weight

Base qty

Delivery mode

Tube

STPS30150CT

STPS30150CFP

STPS30150CW

TO-220AB

2 g

TO-220FPAB

TO-247

1.9 g

4.4 g

Tube

■

Epoxy meets UL94, V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written

approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany

Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore

Spain - Sweden - Switzerland - United Kingdom - United States.

http://www.st.com

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STPS30150CT产品参数

型号:	STPS30150CT
Brand Name：	STMicroelectronics
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	STMICROELECTRONICS
零件包装代码：	TO-220AB
包装说明：	PLASTIC PACKAGE-3
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
Factory Lead Time：	11 weeks
风险等级：	2.23
Samacsys Confidence：	4
Samacsys Status：	Released
Samacsys PartID：	180417
Samacsys Pin Count：	3
Samacsys Part Category：	Schottky Diode
Samacsys Package Category：	Transistor Outline, Vertical
Samacsys Footprint Name：	TO-220AB_a
Samacsys Released Date：	2020-03-09 12:48:35
Is Samacsys：	N
其他特性：	LOW LEAKAGE CURRENT
应用：	HIGH VOLTAGE POWER
配置：	COMMON CATHODE, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.75 V
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
最大非重复峰值正向电流：	220 A
元件数量：	2
相数：	1
端子数量：	3
最高工作温度：	175 °C
最大输出电流：	15 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大重复峰值反向电压：	150 V
子类别：	Rectifier Diodes
表面贴装：	NO
技术：	SCHOTTKY
端子面层：	Matte Tin (Sn) - annealed
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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