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T4 Series

®

SNUBBERLESS™ & LOGIC LEVEL

4A TRIACS

MAIN FEATURES:

A2

Symbol

Value

4

Unit

A

G

I

T(RMS)

A1

V

/V

600 to 800

V

A2

DRM RRM

A2

I

5 to 35

mA

GTT (Q )

1

A1

A2

G

A1

A2

G

DPAK

(T4-B)

IPAK

(T4-H)

DESCRIPTION

Based on ST’s Snubberless / Logic level technolo-

gy providing high commutation performances, the

T4 series is suitable for use on AC inductive loads.

They are recommended for applications using

universal motors, electrovalves.... such as kitchen

aid equipments, power tools, dishwashers,...

Available in a fully insulated package, the

T4...-...W version complies with UL standards (ref.

E81734).

A2

A1

A2

A1

A2

G

ISOWATT 220AB

(T4-W)

TO-220AB

(T4-T)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

I

RMS on-state current (full sine wave)

DPAK / IPAK

TO-220AB

A

T(RMS)

Tc = 110°C

4

ISOWATT 220AB

F = 50 Hz

Tc = 105°C

t = 20 ms

I

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

30

31

A

TSM

F = 60 Hz

t = 16.7 ms

²

tp = 10 ms

5.1

A s

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

F = 120 Hz

Tj = 125°C

50

A/µs

I

= 2 x I , tr ≤ 100 ns

G

GT

I

Peak gate current

tp = 20 µs

Tj = 125°C

4

1

A

GM

P

Average gate power dissipation

W

G(AV)

T

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

T

j

June 2003 - Ed: 5

1/8

T4 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

Quadrant

T4

T410

10

Unit

T405

5

T435

35

I

(1)

mA

V

I - II - III

MAX.

MIN.

GT

V

= 12 V

R = 30 Ω

L

D

1.3

GT

V

= V

R = 33 kΩ

0.2

D

DRM

L

GD

V

Tj = 125°C

I

(2)

I = 100 mA

MAX.

10

15

20

1.8

0.9

-

15

25

30

40

2.7

2.0

-

35

50

60

400

-

mA

H

T

I

= 1.2 I

I - III

II

G

GT

L

dV/dt (2)

V

= 67 %V

gate open Tj = 125°C

DRM

MIN.

V/µs

D

(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C

(dV/dt)c = 10 V/µs Tj = 125°C

A/ms

-

Without snubber

Tj = 125°C

2.5

STATIC CHARACTERISTICS

Symbol

Test Conditions

Value

Unit

I

= 5.5 A

tp = 380 µs

Tj = 25°C

MAX.

1.6

V

(2)

TM

V

Threshold voltage

Tj = 125°C

Tj = 25°C

Tj = 125°C

0.9

120

5

V

to

R (2)

Dynamic resistance

mΩ

µA

d

I

V

= V

DRM

RRM

DRM RRM

MAX.

1

mA

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

R

Junction to case (AC)

DPAK

IPAK

°C/W

th(j-c)

2.6

TO-220AB

ISOWATT220AB

DPAK

4.0

²

R

Junction to ambient

°C/W

70

S = 0.5 cm

th(j-a)

TO-220AB

ISOWATT220AB

60

IPAK

100

S = Copper surface under tab

T

2/8

T4 Series

PRODUCT SELECTOR

Part Number

Voltage (xxx)

Sensitivity

Type

Package

600 V 700 V 800 V

T405-xxxB

T405-xxxH

T405-xxxT

T405-xxxW

T410-xxxB

T410-xxxH

T410-xxxT

T410-xxxW

T435-xxxB

T435-xxxH

T435-xxxT

T435-xxxW

X

5 mA

Logic level

Snubberless

DPAK

IPAK

5 mA

TO-220AB

ISOWATT220AB

DPAK

5 mA

10 mA

35 mA

IPAK

TO-220AB

ISOWATT220AB

DPAK

IPAK

TO-220AB

ISOWATT220AB

ORDERING INFORMATION

T 4 05 - 600 B

(-TR)

TRIAC

SERIES

CURRENT: 4A

VOLTAGE:

600: 600V

700: 700V

PACKING MODE:

Blank:Tube

-TR: DPAK Tape & Reel

800: 800V

PACKAGE:

B: DPAK

SENSITIVITY:

05: 05mA

10: 10mA

H: IPAK

T:TO-220AB

W: ISOWATT220AB

35: 35mA

OTHER INFORMATION

Part Number

Base

quantity

Packing

mode

Marking

Weight

T4xx-yyyB

T4xx-yyyB-TR

T4xx-yyyH

T4xx-yyyT

T4xx-yyyW

T4xxyyyB

T4xxyyy

0.3 g

0.4 g

2.3 g

2.1 g

75

2500

75

Tube

Tape & reel

Tube

T4xxyyyT

T4xxyyyW

50

Tube

50

Tube

Note: xx = sensitivity, yyy = voltage

3/8

T4 Series

Fig. 1: Maximum power dissipation versus RMS

Fig. 2-1: RMS on-state current case versus tem-

on-state current (full cycle).

perature (full cycle).

P(W)

IT(RMS)(A)

4.5

6

4.0

5

4

3

2

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

TO-220AB/DPAK/IPAK

ISOWATT220AB

1

IT(RMS)(A)

Tc(°C)

0

25

50

75

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Fig. 2-2: RMS on-state current versus ambient

temperature (printed circuit FR4, copper thick-

ness: 35µm),full cycle.

Fig. 3: Relative variation of thermal impedance

versus pulse duration.

K=[Zth/Rth]

IT(RMS)(A)

2.0

1.8

1E+0

DPAK

(S=0.5cm²)

Rth(j-c)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

ISOWATT220AB

Rth(j-a)

TO-220AB/DPAK/IPAK

TO-220AB/ISOWATT220AB

1E-1

DPAK/IPAK

0.2

0.0

Tamb(°C)

50 75

tp(s)

1E-2

0

25

100

125

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

Fig. 5: Surge peak on-state current versus

number of cycles.

IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]

ITSM(A)

2.5

35

30

t=20ms

IGT

2.0

One cycle

25

Non repetitive

Tj initial=25°C

1.5

20

IH & IL

15

1.0

Repetitive

Tc=110°C

10

0.5

5

Tj(°C)

40 60

Number of cycles

0.0

-40 -20

0

20

80 100 120 140

1

10

100

1000

4/8

T4 Series

Fig. 6: Non-repetitive surge peak on-state

current for sinusoidal pulse with width

Fig. 7: On-state characteristics (maximum

values).

a

tp < 10ms, and corresponding value of I²t.

ITM(A)

ITSM (A), I²t (A²s)

30.0

500

Tj initial=25°C

dI/dt limitation:

50A/µs

10.0

100

10

1

ITSM

Tj=Tj max.

1.0

I²t

Tj max.:

Vto= 0.90 V

Rd= 120 mΩ

tp (ms)

VTM(V)

0.1

0.01

0.10

1.00

10.00

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Fig. 8: Relative variation of critical rate of

decrease of main current versus (dV/dt)c (typical

values).

Fig. 9: Relative variation of critical rate of

decrease of main current versus junction

temperature.

(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

5

4

3

2

T435

T410

T405

0.4

1

(dV/dt)c (V/µs)

1.0 10.0

0.2

0.0

Tj(°C)

0

0.1

100.0

0

25

50

75

100

125

Fig. 10: DPAK thermal resistance junction to

ambient versus copper surface under tab (printed

circuit board FR4, copper thickness: 35µm).

Rth(j-a) (°C/W)

100

DPAK

90

80

70

60

50

40

30

20

10

0

S(cm²)

0

4

8

12 16 20 24 28 32 36 40

5/8

T4 Series

PACKAGE MECHANICAL DATA

DPAK (Plastic)

DIMENSIONS

Millimeters

REF.

Inches

Min.

Max

Min.

Max.

A

A1

A2

B

2.20

0.90

0.03

0.64

5.20

0.45

0.48

6.00

6.40

4.40

9.35

2.40

1.10

0.23

0.90

5.40

0.60

6.20

6.60

4.60

10.10

0.086

0.035

0.001

0.025

0.204

0.017

0.018

0.236

0.251

0.173

0.368

0.094

0.043

0.009

0.035

0.212

0.023

0.244

0.259

0.181

0.397

B2

C

R

C2

D

R

E

G

H

L2

L4

R

0.80 typ.

0.031 typ.

0.60

1.00

0.023

0.039

0.2 typ.

0.007 typ.

V2

0°

8°

0°

8°

FOOTPRINT DIMENSIONS (in millimeters)

DPAK (Plastic)

6.7

3

1.6

2.3 2.3

6/8

T4 Series

PACKAGE MECHANICAL DATA

ISOWATT220AB (Plastic)

DIMENSIONS

Millimeters

REF.

Inches

Min.

Max.

Min.

Max.

A

B

4.40

2.50

0.40

0.75

1.15

4.95

2.40

10.00

4.60

2.70

2.75

0.70

1.00

1.70

5.20

2.70

10.40

0.173

0.098

0.016

0.030

0.045

0.195

0.094

0.394

0.181

0.106

0.108

0.028

0.039

0.067

0.205

0.106

0.409

D

E

F

F1

F2

G

G1

H

L2

L3

L4

L6

L7

Diam

16.00 typ.

0.630 typ.

28.60

9.80

30.60

10.60

16.40

9.30

1.125

0.386

0.626

0.354

0.118

1.205

0.417

0.646

0.366

0.126

15.90

9.00

3.00

3.20

PACKAGE MECHANICAL DATA

TO-220AB (Plastic)

DIMENSIONS

REF.

Millimeters

Inches

B

C

b2

Min. Typ. Max. Min.

Typ. Max.

A

a1

a2

B

15.20

15.90 0.598

0.625

0.147

L

3.75

F

I

13.00

10.00

0.61

1.23

4.40

0.49

2.40

6.20

3.75

14.00 0.511

10.40 0.393

0.88 0.024

1.32 0.048

4.60 0.173

0.70 0.019

2.72 0.094

2.70 0.094

6.60 0.244

3.85 0.147

0.551

A

0.409

b1

b2

C

0.034

l4

0.051

0.181

c2

a1

c1

c2

e

0.027

0.107

l3

l2

a2

0.106

F

0.259

I

0.151

I4

L

15.80 16.40 16.80 0.622 0.646 0.661

b1

M

c1

2.65

1.14

2.95 0.104

1.70 0.044

0.116

0.066

e

l2

l3

M

2.60

0.102

7/8

T4 Series

PACKAGE MECHANICAL DATA

IPAK (Plastic)

DIMENSIONS

Millimeters

Min. Typ. Max. Min. Typ. Max.

REF.

Inches

A

A1

A3

B

2.2

0.9

2.4

1.1

1.3

0.9

5.4

0.85

0.086

0.035

0.027

0.025

0.204

0.094

0.043

0.051

0.035

0.212

0.033

A

E

C2

0.7

B2

0.64

5.2

L2

B2

B3

B5

B6

C

0.3

0.035

D

0.95

0.6

6.2

6.6

4.6

0.037

0.023

0.244

0.260

0.181

0.641

0.370

0.047

0.45

0.48

6

0.017

0.019

0.236

0.252

0.173

H

B3

L1

C2

D

B6

L

A1

B

V1

E

6.4

4.4

15.9

9

G

H

16.3 0.626

B5

C

L

9.4

1.2

1

0.354

0.031

G

A3

L1

L2

V1

0.8

0.031 0.039

10°

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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